This document summarizes the specifications and simulation results for a 1SS187 general purpose rectifier diode made by Toshiba. It includes the diode's SPICE model parameters, forward and reverse characteristics from circuit simulations, and comparison of simulated and measured results showing close matches. Reverse recovery time was simulated as 6.97ns compared to a measured 7ns.
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Free SPICE Model of 1SS187 in SPICE PARK
1. Device Modeling Report
COMPONENTS:
DIODE/ GENERAL PURPOSE RECTIFIER/ STANDARD
PART NUMBER: 1SS187
MANUFACTURER: TOSHIBA
Bee Technologies Inc.
All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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2. SPICE MODEL
*$
* P ART NUMBER: 1SS187
* M ANUF ACTURER: TOSHIB A
* All Rights Reserved Copyright ( C) Bee Technologies Inc. 2008
.MODEL D1SS187 D
+ IS=9.1074E-9
+ N=2.0022
+ RS=1.0000E- 6
+ IKF=29.311E-3
+ CJO=2.2105E-12
+ M=.21891
+ VJ=.42919
+ ISR=0
+ BV=80
+ IBV=500.00E-9
+ TT=10.237E-9
*$
All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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3. DIODE MODEL PARAMETERS
PSpice model
Model description
parameter
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap
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4. Forward Current Characteristic
Circuit Simulation Result
1.0A
100mA
10mA
1.0mA
100uA
10uA
0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
V1
0Vdc D1
1SS187
0
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9. Reverse Recovery Characteristic Reference
Measurement
Trj =7.0(ns)
Trb= 2.4(ns)
Conditions: Ifwd=0.2A,Irev=0.2A, Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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