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Device Modeling Report



COMPONENTS: Power MOSFET (Model Parameters)
PART NUMBER: 2SJ683-TL-E
MANUFACTURER: SANYO
Body Diode (Model Parameters) / ESD Protection Diode




                   Bee Technologies Inc.




     All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
                                                                    1
MOSFET MODEL
 PSpice model
                                         Model description
  parameter
    LEVEL
       L        Channel Length
      W         Channel Width
      KP        Transconductance
      RS        Source Ohmic Resistance
      RD        Ohmic Drain Resistance
     VTO        Zero-bias Threshold Voltage
     RDS        Drain-Source Shunt Resistance
     TOX        Gate Oxide Thickness
    CGSO        Zero-bias Gate-Source Capacitance
    CGDO        Zero-bias Gate-Drain Capacitance
     CBD        Zero-bias Bulk-Drain Junction Capacitance
      MJ        Bulk Junction Grading Coefficient
      PB        Bulk Junction Potential
      FC        Bulk Junction Forward-bias Capacitance Coefficient
      RG        Gate Ohmic Resistance
      IS        Bulk Junction Saturation Current
       N        Bulk Junction Emission Coefficient
      RB        Bulk Series Resistance
     PHI        Surface Inversion Potential
   GAMMA        Body-effect Parameter
    DELTA       Width effect on Threshold Voltage
     ETA        Static Feedback on Threshold Voltage
    THETA       Mobility Modulation
    KAPPA       Saturation Field Factor
    VMAX        Maximum Drift Velocity of Carriers
      XJ        Metallurgical Junction Depth
      UO        Surface Mobility




           All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
                                                                          2
Transconductance Characteristic

Circuit Simulation Result




Comparison table


                                         gfs(S)
      -Id(A)                                                                   Error (%)
                       Measurement                   Simulation
               1                     17.600                     18.236               3.61
               2                     24.750                     25.596               3.42
               5                     38.850                     39.876               2.64
               10                    54.250                     55.476               2.26
               20                   75.000                      76.703               2.27
               50                  113.500                     116.109               2.30
           100                     154.500                     156.691               1.42




                All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
                                                                                            3
Vgs-Id Characteristic

Circuit Simulation result

           -120A



           -100A



            -80A



            -60A



            -40A



            -20A



              0A
                0V            -1.0V           -2.0V                -3.0V         -4.0V
                     I(V3)
                                              V_V1

Evaluation circuit

                                                       V3


                                                            0Vdc


                                             U1
                                             2SJ683-TL-E               V2

                       V1                                                  -10



                      0Vdc




                                       0




                All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
                                                                                         4
Comparison Graph

Circuit Simulation Result




Simulation Result


                                          -VGS(V)
       -ID(mA)                                                              Error (%)
                         Measurement                 Simulation
                  1                    2.350                     2.350            0.00
                  2                    2.400                     2.395           -0.21
                  5                    2.490                     2.487           -0.12
                 10                    2.595                     2.592           -0.12
                 20                    2.730                     2.742            0.44
                 40                    2.940                     2.962            0.75
               60                      3.110                     3.135            0.80
               80                      3.270                     3.284            0.43
              100                      3.415                     3.418            0.09
              120                      3.550                     3.541           -0.25


                 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
                                                                                         5
Rds(on) Characteristic

Circuit Simulation result


            -30A



            -24A



            -18A



            -12A



             -6A



              0A
                0V     -30mV -60mV -90mV           -150mV         -210mV      -265mV
                     I(V3)
                                                V_VDS

Evaluation circuit
                                                         V3



                                                         0Vdc

                                                                       VDS
                                                   U1
                                                   2SJ683-TL-E
                                                                       0Vdc
                        V1


                        -10




                                            0



Simulation Result

     ID= -33A, VGS= -10V         Measurement                  Simulation         Error (%)
        R DS (on)        mΩ                     8.000                7.989             -0.14




                All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
                                                                                               6
Gate Charge Characteristic
Circuit Simulation result

            -10V

             -9V

             -8V

             -7V

             -6V

             -5V

             -4V

             -3V

             -2V

             -1V

              0V
                   0         50n       100n          150n          200n          250n         300n
                       V(W1:4)
                                                   Time*1mA
Evaluation circuit



                                                                U1
                                                                2SJ683-TL-E
                                     ION = 0uA                                          I2
               I1 = 0                IOFF = 1mA                               D2        65
               I2 = 1m               W                                        Dbreak
               TD = 0        I1           -
               TR = 5n                 +
               TF = 5n                                                                  VDD
               PW = 600u             W1
               PER = 1000u
                                                                                        -30



                                                            0




Simulation Result

    VDD= -30V,ID= -65A
                                  Measurement               Simulation                 Error (%)
       ,VGS= -10V
        Qgs         nC                         50.000                 50.257                     0.51
        Qgd         nC                         50.000                 50.437                     0.87
         Qg         nC                        290.000                192.240                   -33.71


                All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
                                                                                                        7
Capacitance Characteristic


                                                              Measurement
                                                              Simulation




Simulation Result


                                      Cbd(pF)
           VSD(V)                                                   Error(%)
                        Measurement            Simulation
                 0.0           1200.000              1198.000                -0.17
                 1.0            670.000               668.000                -0.30
                 2.0            498.000               502.000                 0.80
                 5.0            320.000               323.000                 0.94
                10.0            225.000               223.000                -0.89
                15.0            180.000               179.000                -0.56
                20.0            152.000               153.000                 0.66
                25.0            135.000               134.000                -0.74
                30.0            121.000               121.800                 0.66




              All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
                                                                                     8
Switching Time Characteristic

Circuit Simulation result
        -14V


        -12V


        -10V


          -8V


          -6V


          -4V


          -2V


           0V
           4.0us  4.5us         5.0us    5.5us     6.0us       6.5us     7.0us         7.5us
               V(U1:G)         V(U1:D)/3
                                                   Time

Evaluation circuit


                                                                  L2            RL


                                                                  50nH           0.9


                          R1             L1                       U1
                                                                  2SJ683-TL-E                  VDD
        PER = 20u                                                                              -30.5Vdc
        PW = 10u                         30nH
        TF = 5n           50        R2
        TR = 5n                     50
        TD = 5u
        V2 = 20      V2
        V1 = 0


                                                           0



Simulation Result

       ID= -33A, VDD= -30V
                                     Measurement                Simulation                Error(%)
            VGS=0/-10V
            td(on)       ns                      110.000               110.012                      0.01



                    All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
                                                                                                           9
Output Characteristic

Circuit Simulation result

           -130A
                                           -10
           -120A
                                           -8       -6
           -110A
                                                              -4
           -100A

            -90A

            -80A

            -70A

            -60A

            -50A
                                                                        VGS=-3V
            -40A

            -30A

            -20A

            -10A

              0A
                0V    -0.2V       -0.6V         -1.0V           -1.4V        -1.8V
                     I(V3)
                                                 V_V2

Evaluation circuit


                                                         V3


                                                         0Vdc


                                             U1
                                             2SJ683-TL-E                V2


                             V1                                         -2


                         0




                                       0




                All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
                                                                                     10
BODY DIODE SPICE MODEL
Forward Current Characteristic

Circuit Simulation Result

            100A




             10A




            1.0A




           100mA




            10mA




           1.0mA
                0V         0.2V    0.4V          0.6V    0.8V           1.0V   1.2V
                     I(Vsense)
                                                 V_VSD
Evaluation Circuit


                                    Vsense


                                     0Vdc



                                                                U1
                        VSD                                     2SJ683-TL-E




                                             0




               All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
                                                                                      11
Comparison Graph

Circuit Simulation Result




Simulation Result


                                     VSD (-V)
            IDR(-A)                                                  %Error
                            Measurement     Simulation
                0.001              0.470           0.468                      -0.43
                0.001              0.527           0.528                       0.19
                0.100              0.588           0.589                       0.17
                1.000              0.657           0.655                      -0.30
                2.000              0.682           0.679                      -0.38
                5.000              0.720           0.719                      -0.14
               10.000              0.755           0.756                       0.13
               20.000              0.800           0.799                      -0.13
               50.000              0.870           0.872                       0.23
              100.000              0.950           0.949                      -0.11




               All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
                                                                                      12
Reverse Recovery Characteristic

Circuit Simulation Result

           400mA


           300mA


           200mA


           100mA


            -0mA


          -100mA


          -200mA


          -300mA


          -400mA
              8.4us           9.2us        10.0us          10.8us    11.6us        12.4us
                  I(R1)
                                                    Time
Evaluation Circuit

                                               R1


                                               50


                        V1 = -9.4v
                        V2 = 10.6v    V1
                        TD = 20ns                                    U1
                        TR = 10ns                                    2SJ683-TL-E
                        TF = 10ns
                        PW = 1us
                        PER = 100us




                                                    0



Compare Measurement vs. Simulation

                                      Measurement            Simulation            Error (%)
            trj           ns                 60.000                 60.808                  1.35




                  All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
                                                                                                   13
Reverse Recovery Characteristic                                        Reference



                                                     Measurement




Trj= 60.00 (ns)
Trb=160.00 (ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50




                                                     Example




                               Relation between trj and trb




              All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
                                                                                   14
ESD PROTECTION DIODE SPICE MODEL
Zener Voltage Characteristic

Circuit Simulation Result

           -10mA




            -8mA




            -6mA




            -4mA




            -2mA




              0A
                0V           -10V      -20V          -30V         -40V        -50V
                     I(R1)
                                              V_V1

Evaluation Circuit


                                         R1


                                          0.001m


                        V1



                      0Vdc
                                                     U1
                                                     2SJ683-TL-E R2

                                                            100MEG


                                                     0




               All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
                                                                                     15
Zener Voltage Characteristic                                         Reference




            All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
                                                                                 16

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SPICE MODEL of 2SJ683-TL-E (Standard+BDS Model) in SPICE PARK

  • 1. Device Modeling Report COMPONENTS: Power MOSFET (Model Parameters) PART NUMBER: 2SJ683-TL-E MANUFACTURER: SANYO Body Diode (Model Parameters) / ESD Protection Diode Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 1
  • 2. MOSFET MODEL PSpice model Model description parameter LEVEL L Channel Length W Channel Width KP Transconductance RS Source Ohmic Resistance RD Ohmic Drain Resistance VTO Zero-bias Threshold Voltage RDS Drain-Source Shunt Resistance TOX Gate Oxide Thickness CGSO Zero-bias Gate-Source Capacitance CGDO Zero-bias Gate-Drain Capacitance CBD Zero-bias Bulk-Drain Junction Capacitance MJ Bulk Junction Grading Coefficient PB Bulk Junction Potential FC Bulk Junction Forward-bias Capacitance Coefficient RG Gate Ohmic Resistance IS Bulk Junction Saturation Current N Bulk Junction Emission Coefficient RB Bulk Series Resistance PHI Surface Inversion Potential GAMMA Body-effect Parameter DELTA Width effect on Threshold Voltage ETA Static Feedback on Threshold Voltage THETA Mobility Modulation KAPPA Saturation Field Factor VMAX Maximum Drift Velocity of Carriers XJ Metallurgical Junction Depth UO Surface Mobility All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 2
  • 3. Transconductance Characteristic Circuit Simulation Result Comparison table gfs(S) -Id(A) Error (%) Measurement Simulation 1 17.600 18.236 3.61 2 24.750 25.596 3.42 5 38.850 39.876 2.64 10 54.250 55.476 2.26 20 75.000 76.703 2.27 50 113.500 116.109 2.30 100 154.500 156.691 1.42 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 3
  • 4. Vgs-Id Characteristic Circuit Simulation result -120A -100A -80A -60A -40A -20A 0A 0V -1.0V -2.0V -3.0V -4.0V I(V3) V_V1 Evaluation circuit V3 0Vdc U1 2SJ683-TL-E V2 V1 -10 0Vdc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 4
  • 5. Comparison Graph Circuit Simulation Result Simulation Result -VGS(V) -ID(mA) Error (%) Measurement Simulation 1 2.350 2.350 0.00 2 2.400 2.395 -0.21 5 2.490 2.487 -0.12 10 2.595 2.592 -0.12 20 2.730 2.742 0.44 40 2.940 2.962 0.75 60 3.110 3.135 0.80 80 3.270 3.284 0.43 100 3.415 3.418 0.09 120 3.550 3.541 -0.25 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 5
  • 6. Rds(on) Characteristic Circuit Simulation result -30A -24A -18A -12A -6A 0A 0V -30mV -60mV -90mV -150mV -210mV -265mV I(V3) V_VDS Evaluation circuit V3 0Vdc VDS U1 2SJ683-TL-E 0Vdc V1 -10 0 Simulation Result ID= -33A, VGS= -10V Measurement Simulation Error (%) R DS (on) mΩ 8.000 7.989 -0.14 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 6
  • 7. Gate Charge Characteristic Circuit Simulation result -10V -9V -8V -7V -6V -5V -4V -3V -2V -1V 0V 0 50n 100n 150n 200n 250n 300n V(W1:4) Time*1mA Evaluation circuit U1 2SJ683-TL-E ION = 0uA I2 I1 = 0 IOFF = 1mA D2 65 I2 = 1m W Dbreak TD = 0 I1 - TR = 5n + TF = 5n VDD PW = 600u W1 PER = 1000u -30 0 Simulation Result VDD= -30V,ID= -65A Measurement Simulation Error (%) ,VGS= -10V Qgs nC 50.000 50.257 0.51 Qgd nC 50.000 50.437 0.87 Qg nC 290.000 192.240 -33.71 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 7
  • 8. Capacitance Characteristic Measurement Simulation Simulation Result Cbd(pF) VSD(V) Error(%) Measurement Simulation 0.0 1200.000 1198.000 -0.17 1.0 670.000 668.000 -0.30 2.0 498.000 502.000 0.80 5.0 320.000 323.000 0.94 10.0 225.000 223.000 -0.89 15.0 180.000 179.000 -0.56 20.0 152.000 153.000 0.66 25.0 135.000 134.000 -0.74 30.0 121.000 121.800 0.66 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 8
  • 9. Switching Time Characteristic Circuit Simulation result -14V -12V -10V -8V -6V -4V -2V 0V 4.0us 4.5us 5.0us 5.5us 6.0us 6.5us 7.0us 7.5us V(U1:G) V(U1:D)/3 Time Evaluation circuit L2 RL 50nH 0.9 R1 L1 U1 2SJ683-TL-E VDD PER = 20u -30.5Vdc PW = 10u 30nH TF = 5n 50 R2 TR = 5n 50 TD = 5u V2 = 20 V2 V1 = 0 0 Simulation Result ID= -33A, VDD= -30V Measurement Simulation Error(%) VGS=0/-10V td(on) ns 110.000 110.012 0.01 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 9
  • 10. Output Characteristic Circuit Simulation result -130A -10 -120A -8 -6 -110A -4 -100A -90A -80A -70A -60A -50A VGS=-3V -40A -30A -20A -10A 0A 0V -0.2V -0.6V -1.0V -1.4V -1.8V I(V3) V_V2 Evaluation circuit V3 0Vdc U1 2SJ683-TL-E V2 V1 -2 0 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 10
  • 11. BODY DIODE SPICE MODEL Forward Current Characteristic Circuit Simulation Result 100A 10A 1.0A 100mA 10mA 1.0mA 0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V I(Vsense) V_VSD Evaluation Circuit Vsense 0Vdc U1 VSD 2SJ683-TL-E 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 11
  • 12. Comparison Graph Circuit Simulation Result Simulation Result VSD (-V) IDR(-A) %Error Measurement Simulation 0.001 0.470 0.468 -0.43 0.001 0.527 0.528 0.19 0.100 0.588 0.589 0.17 1.000 0.657 0.655 -0.30 2.000 0.682 0.679 -0.38 5.000 0.720 0.719 -0.14 10.000 0.755 0.756 0.13 20.000 0.800 0.799 -0.13 50.000 0.870 0.872 0.23 100.000 0.950 0.949 -0.11 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 12
  • 13. Reverse Recovery Characteristic Circuit Simulation Result 400mA 300mA 200mA 100mA -0mA -100mA -200mA -300mA -400mA 8.4us 9.2us 10.0us 10.8us 11.6us 12.4us I(R1) Time Evaluation Circuit R1 50 V1 = -9.4v V2 = 10.6v V1 TD = 20ns U1 TR = 10ns 2SJ683-TL-E TF = 10ns PW = 1us PER = 100us 0 Compare Measurement vs. Simulation Measurement Simulation Error (%) trj ns 60.000 60.808 1.35 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 13
  • 14. Reverse Recovery Characteristic Reference Measurement Trj= 60.00 (ns) Trb=160.00 (ns) Conditions:Ifwd=lrev=0.2(A),Rl=50 Example Relation between trj and trb All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 14
  • 15. ESD PROTECTION DIODE SPICE MODEL Zener Voltage Characteristic Circuit Simulation Result -10mA -8mA -6mA -4mA -2mA 0A 0V -10V -20V -30V -40V -50V I(R1) V_V1 Evaluation Circuit R1 0.001m V1 0Vdc U1 2SJ683-TL-E R2 100MEG 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 15
  • 16. Zener Voltage Characteristic Reference All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 16