This document summarizes the SPICE modeling and simulation of the power MOSFET and body diode components of the 2SK3869 transistor. It includes SPICE parameter definitions and simulation results validating the models against measurement data for key electrical characteristics such as transconductance, capacitance, switching time, and forward/reverse current behavior. The document provides a reference for the device models and simulation setups used to test the models' accuracy.
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SPICE MODEL of 2SK3869 (Standard+BDS Model) in SPICE PARK
1. Device Modeling Report
COMPONENTS: Power MOSFET (Model Parameter)
PART NUMBER: 2SK3869
MANUFACTURER: TOSHIBA
Body Diode (Model Parameter) / ESD Protection Diode
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
2. Circuit Configuration
2SK3869
MOSFET MODEL
Pspice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Modility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
3. Transconductance Characteristic
Circuit Simulation Result
Comparison table
gfs
Id(A) Error(%)
Measurement Simulation
0.100 0.900 0.911 1.222
0.200 1.250 1.285 2.816
0.500 2.000 2.014 0.690
1.000 2.750 2.824 2.695
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
13. Reverse Recovery Characteristic
Circuit Simulation Result
400mA
0A
-400mA
14us 16us 18us 20us 22us 24us 26us 28us 30us 32us
I(RL21)
Time
Evaluation Circuit
RL21
N07543
50
V1 = -9.40
V2 = 10.68
TD = 1.8u U8 2SK3869
TF = 10n V21
TR = 10n
PW = 20u
PER = 50u
0
Compare Measurement vs. Simulation
Measurement Simulation Error (%)
trj 1.20 us 1.207 us 0.608
trb 1.12 us 0.1609 us -85.633
trr 2.32 us 1.368 us -41.025
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
14. Reverse Recovery Characteristic Reference
Trj=1.20(us)
Trb=1.12(us)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
15. ESD PROTECTION DIODE SPICE MODEL
Zener Voltage Characteristic
Circuit Simulation Result
10mA
9mA
8mA
7mA
6mA
5mA
4mA
3mA
2mA
1mA
0A
0V 10V 20V 30V 40V 50V 60V 70V 80V 90V
I(R1)
V_V1
Evaluation Circuit
R1 Open
0.01m
2SK3869
V1
0Vdc
U5
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006