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Device Modeling Report




COMPONENTS: Zener Diode
PART NUMBER: CMZB30
MANUFACTURER: TOSHIBA




              Bee Technologies Inc.



All Rights Reserved Copyright (c) Bee Technologies Inc. 2013

                                                               1
PSpice model
                                     Model description
 parameter
      IS          Saturation Current
     RS           Series Resistance
     IKF          High-injection Knee Current
      M           Junction Grading Coefficient
      N           Emission Coefficient
     XTI          Saturation Current temp.exp




       All Rights Reserved Copyright (c) Bee Technologies Inc. 2013

                                                                      2
Reverse Characteristic

Circuit Simulation result


             100mA



               10mA



             1.0mA



             100uA



               10uA



             1.0uA



             100nA
                      0V        5V        10V    15V            20V      25V     30V    35V
                           I(U1:K)
                                                         V_VR



Evaluation circuit


                                                 R1

                                                 0.01m

                                     VR                               U1
                                                                      CMZB30




                                           0


    Comparison Measurement vs. Simulation
      Parameter              Condition          Measurement             Simulation      %Error
          VZ(V)              IZ=10(mA)                    30.000               30.234         0.78
          rd(Ω)              IZ=10(mA)                    30.000               30.018         0.06
         IR(uA)               VR=21(V)                    10.000                9.996         -0.04

                     All Rights Reserved Copyright (c) Bee Technologies Inc. 2013

                                                                                                      3
Forward Current Characteristics

Circuit Simulation result



                 10A




               1.0A




             100mA




               10mA
                       0V     0.2V 0.4V    0.6V   0.8V   1.0V   1.2V   1.4V   1.6V   1.8V
                            I(U1:A)
                                                         V_VF



Evaluation circuit

                                                   R1

                                                   0.01m

                                    VF                                 U1
                                                                       CMZB30




                                           0


    Comparison Measurement vs. Simulation: Condition IF=0.2(A)
       Parameter             Unit        Measurement            Simulation              %Error
            VF                V                   1.200                   1.200              0.00




                     All Rights Reserved Copyright (c) Bee Technologies Inc. 2013

                                                                                                    4

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SPICE MODEL of CMZB30 (Standard+ Model) in SPICE PARK

  • 1. Device Modeling Report COMPONENTS: Zener Diode PART NUMBER: CMZB30 MANUFACTURER: TOSHIBA Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2013 1
  • 2. PSpice model Model description parameter IS Saturation Current RS Series Resistance IKF High-injection Knee Current M Junction Grading Coefficient N Emission Coefficient XTI Saturation Current temp.exp All Rights Reserved Copyright (c) Bee Technologies Inc. 2013 2
  • 3. Reverse Characteristic Circuit Simulation result 100mA 10mA 1.0mA 100uA 10uA 1.0uA 100nA 0V 5V 10V 15V 20V 25V 30V 35V I(U1:K) V_VR Evaluation circuit R1 0.01m VR U1 CMZB30 0 Comparison Measurement vs. Simulation Parameter Condition Measurement Simulation %Error VZ(V) IZ=10(mA) 30.000 30.234 0.78 rd(Ω) IZ=10(mA) 30.000 30.018 0.06 IR(uA) VR=21(V) 10.000 9.996 -0.04 All Rights Reserved Copyright (c) Bee Technologies Inc. 2013 3
  • 4. Forward Current Characteristics Circuit Simulation result 10A 1.0A 100mA 10mA 0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V 1.4V 1.6V 1.8V I(U1:A) V_VF Evaluation circuit R1 0.01m VF U1 CMZB30 0 Comparison Measurement vs. Simulation: Condition IF=0.2(A) Parameter Unit Measurement Simulation %Error VF V 1.200 1.200 0.00 All Rights Reserved Copyright (c) Bee Technologies Inc. 2013 4