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Device Modeling Report




COMPONENTS:
DIODE/ SCHOOTTKY RECTIFIER / STANDARD
PART NUMBER: D1FS4
MANUFACTURER: SHINDENGEN




               Bee Technologies Inc.



 All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
PSpice model
                                  Model description
 parameter
     IS        Saturation Current
     N         Emission Coefficient
     RS        Series Resistance
    IKF        High-injection Knee Current
    CJO        Zero-bias Junction Capacitance
     M         Junction Grading Coefficient
     VJ        Junction Potential
    ISR        Recombination Current Saturation Value
     BV        Reverse Breakdown Voltage(a positive value)
    IBV        Reverse Breakdown Current(a positive value)
     TT        Transit Time
    EG         Energy-band Gap




          All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
Forward Current Characteristic


Circuit Simulation Result




Evaluation Circuit


                         R1

                         0.001m

          V1
   0Vdc                            D1



                         D1FS4




                     0




               All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
Comparison Graph


Circuit Simulation Result




Simulation Result

                              Vfwd(V)           Vfwd(V)
            Ifwd(A)                                                 %Error
                            Measurement        Simulation
                    0.05           0.300             0.298                    -0.67
                     0.1           0.323             0.322                    -0.31
                     0.2           0.347             0.349                     0.58
                     0.5           0.398             0.400                     0.50
                       1           0.470             0.469                    -0.21
                       2           0.570             0.567                    -0.53
                       5           0.810             0.811                     0.12




               All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
Junction Capacitance Characteristic


Circuit Simulation Result




Evaluation Circuit


                          V2


   V2 = 40                     0Vdc
   V1 = 0
   TD = 0                                    D1
   TR = 10ns    V1
   TF = 50ns
   PW = 5us
   PER = 10us
                                   D1FS4




                               0




                     All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
Comparison Graph


Circuit Simulation Result




Simulation Result

                               Cj(pF)            Cj(pF)
           Vrev(V)                                                   %Error
                            Measurement        Simulation
                     0.1         220.000           210.000                    -4.55
                     0.2         210.000           215.000                     2.38
                     0.5         184.000           189.000                     2.72
                       1         157.000           159.000                     1.27
                       2         125.000           126.000                     0.80
                       5           87.000            88.000                    1.15
                      10           64.694            65.000                    0.47
                      20           47.689            48.000                    0.65
                      40           35.686            36.000                    0.88




               All Rights Reserved Copyright (C) Bee Technologies Inc. 2004

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SPICE MODEL of D1FS4 (Standard Model) in SPICE PARK

  • 1. Device Modeling Report COMPONENTS: DIODE/ SCHOOTTKY RECTIFIER / STANDARD PART NUMBER: D1FS4 MANUFACTURER: SHINDENGEN Bee Technologies Inc. All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
  • 2. PSpice model Model description parameter IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
  • 3. Forward Current Characteristic Circuit Simulation Result Evaluation Circuit R1 0.001m V1 0Vdc D1 D1FS4 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
  • 4. Comparison Graph Circuit Simulation Result Simulation Result Vfwd(V) Vfwd(V) Ifwd(A) %Error Measurement Simulation 0.05 0.300 0.298 -0.67 0.1 0.323 0.322 -0.31 0.2 0.347 0.349 0.58 0.5 0.398 0.400 0.50 1 0.470 0.469 -0.21 2 0.570 0.567 -0.53 5 0.810 0.811 0.12 All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
  • 5. Junction Capacitance Characteristic Circuit Simulation Result Evaluation Circuit V2 V2 = 40 0Vdc V1 = 0 TD = 0 D1 TR = 10ns V1 TF = 50ns PW = 5us PER = 10us D1FS4 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
  • 6. Comparison Graph Circuit Simulation Result Simulation Result Cj(pF) Cj(pF) Vrev(V) %Error Measurement Simulation 0.1 220.000 210.000 -4.55 0.2 210.000 215.000 2.38 0.5 184.000 189.000 2.72 1 157.000 159.000 1.27 2 125.000 126.000 0.80 5 87.000 88.000 1.15 10 64.694 65.000 0.47 20 47.689 48.000 0.65 40 35.686 36.000 0.88 All Rights Reserved Copyright (C) Bee Technologies Inc. 2004