SPICE MODEL of IDH10G65C5 (Professional Model) in SPICE PARK
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SPICE MODEL of IDH10G65C5 (Professional Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
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SPICE MODEL of IDH10G65C5 (Professional Model) in SPICE PARK
- 1. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 1 Device Modeling Report Bee Technologies Inc. COMPONENTS: SiC Schottky Barrier Diode PART NUMBER: IDH10G65C5 MANUFACTURER: Infineon REMARK: Professional Model
- 2. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 2 Circuit Configuration DIODE MODEL PARAMETERS PSpice model parameter Model description IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap
- 3. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 3 U1 IDH10G65C5 R1 0.01m V1 0Vdc 0 R2 100MEG V_V1 0V 0.5V 1.0V 1.5V 2.0V 2.5V 3.0V I(R1) 0A 2A 4A 6A 8A 10A 12A 14A 16A 18A 20A Forward Current Characteristics Circuit Simulation result Evaluation circuit
- 4. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 4 Comparison Graph Circuit Simulation result Comparison table IF (A) VF (V) %Error Measurement Simulation 0.1 0.895 0.894 -0.11 0.2 0.917 0.918 0.11 0.5 0.955 0.956 0.10 1 1.000 1.000 0.00 2 1.080 1.068 -1.11 5 1.250 1.243 -0.56 10 1.500 1.513 0.87 20 2.040 2.035 -0.25
- 5. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 5 V(R) 100mV 1.0V 10V 100V 1.0KV I(V2)/(650V/100u) 0 50p 100p 150p 200p 250p 300p 350p 400p 0 R V1 TD = 0 TF = 100ns PW = 100us PER = 10m V1 = 0 TR = 100us V2 = 650 V2 0Vdc R2 100MEG U1 IDH10G65C5 Junction Capacitance Characteristic Circuit Simulation result Evaluation circuit
- 6. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 6 Comparison Graph Circuit Simulation result Comparison table VR(V) C (pF) %Error Measurement Simulation 0.1 363.000 359.400 -0.99 0.2 355.000 350.600 -1.24 0.5 333.000 329.200 -1.14 1 300.000 298.700 -0.43 2 255.000 255.300 0.12 5 190.000 185.700 -2.26 10 144.000 137.000 -4.86 20 104.000 99.300 -4.52 50 70.000 67.700 -3.29 100 52.000 53.900 3.65 200 43.800 45.900 4.79 500 40.000 40.370 0.92
- 7. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 7 V_V1 100V 200V 300V 400V 500V 600V I(R1) 1.0nA 10nA 100nA 1.0uA 10uA R4 10G U1 IDH10G65C5 R1 100m V1 0Vdc 0 Reverse Characteristic Circuit Simulation result Evaluation circuit
- 8. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 8 Comparison Graph Circuit Simulation result Comparison table IR (A) VR (V) %Error Measurement Simulation 1.00E-09 428.000 408.700 -4.51 1.00E-08 508.000 507.100 -0.18 5.30E-07 650.000 649.100 -0.14