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Device Modeling Report




COMPONENTS:
DIODE/ SCHOOTTKY RECTIFIER / STANDARD
PART NUMBER: M1FS6
MANUFACTURER: SHINDENGEN




              Bee Technologies Inc.



 All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
PSpice model
                                   Model description
 parameter
     IS        Saturation Current
     N         Emission Coefficient
     RS        Series Resistance
    IKF        High-injection Knee Current
    CJO        Zero-bias Junction Capacitance
     M         Junction Grading Coefficient
     VJ        Junction Potential
    ISR        Recombination Current Saturation Value
     BV        Reverse Breakdown Voltage(a positive value)
    IBV        Reverse Breakdown Current(a positive value)
     TT        Transit Time
    EG         Energy-band Gap




         All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
Forward Current Characteristic


Circuit Simulation Result




Evaluation Circuit


                     R1


                      0.001m

           V1
   0Vdc                                D1



                               M1FS6




                      0




                All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
Comparison Graph


Circuit Simulation Result




Simulation Result

                              Vfwd(V)            Vfwd(V)
           Ifwd(A)                                                    %Error
                            Measurement         Simulation
                     0.1           0.330               0.327                  -0.91
                     0.2           0.360               0.368                   2.22
                     0.5           0.436               0.420                  -3.67
                       1           0.520               0.522                   0.38
                       2           0.652               0.649                  -0.46
                       5           0.950               0.961                   1.16




               All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
Junction Capacitance Characteristic


Circuit Simulation Result




Evaluation Circuit

                         V2


   V2 = 60                    0Vdc
   V1 = 0
   TD = 0
   TR = 10ns    V1                           D1
   TF = 50ns
   PW = 5us
   PER = 10us
                                     M1FS6




                              0




                     All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
Comparison Graph


Circuit Simulation Result




Simulation Result

                               Cj(pF)             Cj(pF)
          Vrev(V)                                                     %Error
                            Measurement         Simulation
                     1             144.00             144.60                   0.42
                     2             110.00             110.40                   0.36
                     5              74.00              75.20                   1.62
                    10              54.00              54.90                   1.67
                    20              40.00              40.20                   0.50
                    40              29.00              29.20                   0.69
                    60              25.00              24.30                  -2.80




               All Rights Reserved Copyright (C) Bee Technologies Inc. 2004

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SPICE MODEL of M1FS6 (Standard Model) in SPICE PARK

  • 1. Device Modeling Report COMPONENTS: DIODE/ SCHOOTTKY RECTIFIER / STANDARD PART NUMBER: M1FS6 MANUFACTURER: SHINDENGEN Bee Technologies Inc. All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
  • 2. PSpice model Model description parameter IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
  • 3. Forward Current Characteristic Circuit Simulation Result Evaluation Circuit R1 0.001m V1 0Vdc D1 M1FS6 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
  • 4. Comparison Graph Circuit Simulation Result Simulation Result Vfwd(V) Vfwd(V) Ifwd(A) %Error Measurement Simulation 0.1 0.330 0.327 -0.91 0.2 0.360 0.368 2.22 0.5 0.436 0.420 -3.67 1 0.520 0.522 0.38 2 0.652 0.649 -0.46 5 0.950 0.961 1.16 All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
  • 5. Junction Capacitance Characteristic Circuit Simulation Result Evaluation Circuit V2 V2 = 60 0Vdc V1 = 0 TD = 0 TR = 10ns V1 D1 TF = 50ns PW = 5us PER = 10us M1FS6 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
  • 6. Comparison Graph Circuit Simulation Result Simulation Result Cj(pF) Cj(pF) Vrev(V) %Error Measurement Simulation 1 144.00 144.60 0.42 2 110.00 110.40 0.36 5 74.00 75.20 1.62 10 54.00 54.90 1.67 20 40.00 40.20 0.50 40 29.00 29.20 0.69 60 25.00 24.30 -2.80 All Rights Reserved Copyright (C) Bee Technologies Inc. 2004