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Device Modeling Report




 COMPONENTS: PHOTOCOUPLER
 PART NUMBER: PC825
 MANUFACTURER: SHARP




              Bee Technologies Inc.


All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
DIODE MODEL
  Pspice model
                                         Model description
   Parameter
        IS         Saturation Current
        N          Emission Coefficient
       RS          Series Resistance
       IKF         High-injection Knee Current
      CJO          Zero-bias Junction Capacitance
        M          Junction Grading Coefficient
        VJ         Junction Potential
      ISR          Recombination Current Saturation Value
       BV          Reverse Breakdown Voltage(a positive value)
      IBV          Reverse Breakdown Current(a positive value)
        TT         Transit Time

BIPOLAR JUNCTION TRANSISTOR MODEL
  Pspice model
                                Model description
   parameter
       NR      Reverse Emission Coefficient
       RB      Base Resistance
       RC      Series Collector Resistance
      CJE      Zero-bias Emitter-Base Junction Capacitance
      CJC      Zero-bias Collector-Base Junction Capacitance
       TF      Forward Transit Time
       TR      Reverse Transit Time

VOLTAGE CONTROLLED VOLTAGE SOURCE MODEL(VCVS)


E<Name><(+)Node><(-)Node>VALUE={Expression}

E<Name><(+)Node><(-)Node>TABLE={Expression}




          All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
VOLTAGE CONTROLLED CURRENT SOURCE MODEL(VCCS)


E<Name><(+)Node><(-)Node>VALUE={Expression}


CURRENT CONTROLLED MODEL(W)
  Pspice model
                                Model description
   parameter
      IOFF     Controlling current to Off state
       ION     Controlling current to On state
     ROFF      Off Resistance
      RON      On Resistance




          All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Input Device Forward Current Characteristics




                                                 Measurement
                                                 Simulation




Input Device Junction Capacitance Characteristics




                                              Measurement
                                              Simulation




          All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Input Device Reverse Recovery Characteristics




                                               Measurement




trj=120n(s)
trb=152n(s)
Conditions:Ifwd=Irev=0.04(A),Rl=50



                                                         Example




                             Relation between trj and trb

             All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
LED IV Curve Characteristics

Evaluation Circuit



                                                   U2
                                               1              8
                                                                                                open
                                                                                         V1

      50mAdc         I1                        2              7                 2Vdc
                                                                                                       R1
                                               3              6
                                       open                          open                              1k


                                               4              5                                    0
                                       open                          open

                                                   PC825
                 0
                                                                                         0




Simulation result

               500mA




                                                                            Simulation
               100mA




                10mA




               1.0mA


                          0V                  1.0V                2.0V            3.0V   3.5V
                               I(I1)
                                                           V(U2:1)




                 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Comparison Table

                                Vfwd(V)
         Ifwd(A)                                                        % Error
                       Measurement               Simulation
           0.001              1.080                   1.077              -0.306
           0.002              1.100                   1.102               0.145
           0.005              1.130                   1.145               1.319
            0.01              1.200                   1.184              -1.367
            0.02              1.240                   1.246               0.516
            0.05              1.400                   1.398              -0.114




         All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Transistor Saturation Characteristics

Evaluation Circuit



                                       U3
                                   1           8

        I1                                                                         open
                                                                        I2
        20mAdc                     2           7
                                                                        5mAdc
                                   3           6                                            R1
                         open                      open
                                                                                            1k

                                   4           5
                         open                      open                                 0
        0                                                               0
                                       PC825




Simulation result

             1.6V




             1.2V



                                                                 Simulation

             0.8V




             0.4V
                    0s                               50ms                       100ms
                         V(I2:-)
                                                     Time



Comparison Table

                                Measurement               Simulation         % Error
         Vce(sat) (V)                   0.800                   0.802             0.250

                 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
CTR(Current Transfer Ratio) Characteristics

Evaluation Circuit


              V2                                           V3


                     0Vdc                                       0Vdc

                                       U1
                                   1           8
                                                                                   open

                                                                       V1
        I1                         2           7                2Vdc
                                                                                          R1
       20mAdc                      3           6
                            open                   open                                   1k


                                   4           5                                      0
                            open                   open

                                       PC825                           0
       0



Simulation result

             2.0K



                                                            Simulation

             1.5K




             1.0K




             0.5K


                100uA                      1.0mA                            10mA
                    (IC(X_U1.Q_Q1)/ I(X_U1.D_D1))*100
                                            I_I1




                   All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Rise Curve     Table

                                                    CTR(%)
          If(mA)                                                            % Error
                        Measurement              Simulation
             0.200           520.000                532.684                   2.439
             0.500           930.000                900.767                  -3.143
             1.000          1570.000               1500.700                  -4.414
             1.100          1600.000               1609.900                   0.619



Fall Curve Table

                                  CTR(%)
      If(mA)                                                         % Error
                       Measurement      Simulation
             1.100          1600.000        1609.900                          0.619
             2.000          1310.000        1261.800                         -3.679
             3.000          1100.000        1120.400                          1.855
             5.000           900.000         920.052                          2.228




             All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Switching Time Characteristics

Evaluation Circuit

                         V1


                                0Vdc
  I1 = 0
  I2 = 20m                                                                                 RL
  TD = 0                                           U1                                              open
  TF = 10n                                     1            8                              100
  TR = 10n        I2
  PW = 20u
  PER = 500u                                                                           V2                 R1
                                               2            7
                                                                               2Vdc                       1k
                                               3            6
                                        open                      open
                                                                                                      0

                                               4            5
                                        open                      open

                                                   PC825                               0
                 0


Simulation result

               3.0V           20mA
         1               2

                                                                         Simulation

               2.0V


                              10mA


               1.0V




                                >>
                 0V             0A
                                   0s            50us          100us         150us         200us
                                    1      V(U1:8) 2       I(V1)
                                                                Time


Comparison Table
   Vce=2V,RL=100                      Measurement              Simulation            % Error
          ts (us)                              3.600                  3.7583                4.397
          tf (us)                             52.000                  49.801               -4.229

                       All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

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SPICE MODEL of PC825 in SPICE PARK

  • 1. Device Modeling Report COMPONENTS: PHOTOCOUPLER PART NUMBER: PC825 MANUFACTURER: SHARP Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  • 2. DIODE MODEL Pspice model Model description Parameter IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time BIPOLAR JUNCTION TRANSISTOR MODEL Pspice model Model description parameter NR Reverse Emission Coefficient RB Base Resistance RC Series Collector Resistance CJE Zero-bias Emitter-Base Junction Capacitance CJC Zero-bias Collector-Base Junction Capacitance TF Forward Transit Time TR Reverse Transit Time VOLTAGE CONTROLLED VOLTAGE SOURCE MODEL(VCVS) E<Name><(+)Node><(-)Node>VALUE={Expression} E<Name><(+)Node><(-)Node>TABLE={Expression} All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  • 3. VOLTAGE CONTROLLED CURRENT SOURCE MODEL(VCCS) E<Name><(+)Node><(-)Node>VALUE={Expression} CURRENT CONTROLLED MODEL(W) Pspice model Model description parameter IOFF Controlling current to Off state ION Controlling current to On state ROFF Off Resistance RON On Resistance All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  • 4. Input Device Forward Current Characteristics Measurement Simulation Input Device Junction Capacitance Characteristics Measurement Simulation All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  • 5. Input Device Reverse Recovery Characteristics Measurement trj=120n(s) trb=152n(s) Conditions:Ifwd=Irev=0.04(A),Rl=50 Example Relation between trj and trb All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  • 6. LED IV Curve Characteristics Evaluation Circuit U2 1 8 open V1 50mAdc I1 2 7 2Vdc R1 3 6 open open 1k 4 5 0 open open PC825 0 0 Simulation result 500mA Simulation 100mA 10mA 1.0mA 0V 1.0V 2.0V 3.0V 3.5V I(I1) V(U2:1) All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  • 7. Comparison Table Vfwd(V) Ifwd(A) % Error Measurement Simulation 0.001 1.080 1.077 -0.306 0.002 1.100 1.102 0.145 0.005 1.130 1.145 1.319 0.01 1.200 1.184 -1.367 0.02 1.240 1.246 0.516 0.05 1.400 1.398 -0.114 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  • 8. Transistor Saturation Characteristics Evaluation Circuit U3 1 8 I1 open I2 20mAdc 2 7 5mAdc 3 6 R1 open open 1k 4 5 open open 0 0 0 PC825 Simulation result 1.6V 1.2V Simulation 0.8V 0.4V 0s 50ms 100ms V(I2:-) Time Comparison Table Measurement Simulation % Error Vce(sat) (V) 0.800 0.802 0.250 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  • 9. CTR(Current Transfer Ratio) Characteristics Evaluation Circuit V2 V3 0Vdc 0Vdc U1 1 8 open V1 I1 2 7 2Vdc R1 20mAdc 3 6 open open 1k 4 5 0 open open PC825 0 0 Simulation result 2.0K Simulation 1.5K 1.0K 0.5K 100uA 1.0mA 10mA (IC(X_U1.Q_Q1)/ I(X_U1.D_D1))*100 I_I1 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  • 10. Rise Curve Table CTR(%) If(mA) % Error Measurement Simulation 0.200 520.000 532.684 2.439 0.500 930.000 900.767 -3.143 1.000 1570.000 1500.700 -4.414 1.100 1600.000 1609.900 0.619 Fall Curve Table CTR(%) If(mA) % Error Measurement Simulation 1.100 1600.000 1609.900 0.619 2.000 1310.000 1261.800 -3.679 3.000 1100.000 1120.400 1.855 5.000 900.000 920.052 2.228 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  • 11. Switching Time Characteristics Evaluation Circuit V1 0Vdc I1 = 0 I2 = 20m RL TD = 0 U1 open TF = 10n 1 8 100 TR = 10n I2 PW = 20u PER = 500u V2 R1 2 7 2Vdc 1k 3 6 open open 0 4 5 open open PC825 0 0 Simulation result 3.0V 20mA 1 2 Simulation 2.0V 10mA 1.0V >> 0V 0A 0s 50us 100us 150us 200us 1 V(U1:8) 2 I(V1) Time Comparison Table Vce=2V,RL=100 Measurement Simulation % Error ts (us) 3.600 3.7583 4.397 tf (us) 52.000 49.801 -4.229 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006