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All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
1
Device Modeling Report
Bee Technologies Inc.
COMPONENTS: SiC Schottky Barrier Diode
PART NUMBER: SCS110AM
MANUFACTURER: ROHM
REAMARK: POFESSIONAL MODEL
All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
2
Circuit Configuration
DIODE MODEL PARAMETERS
PSpice
model
parameter
Model description
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap
All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
3
U1
SCS110AM_P
R1
0.01m
V1
0Vdc
0
V_V1
0V 0.5V 1.0V 1.5V 2.0V 2.5V
I(R1)
1.0mA
10mA
100mA
1.0A
10A
100A
Forward Current Characteristics
Circuit Simulation result
Evaluation circuit
All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
4
Comparison Graph
Circuit Simulation result
Comparison table
IF (A)
VF (V)
%Error
Measurement Simulation
0.01 0.940 0.941 0.11
0.1 1.010 1.000 -0.99
1 1.107 1.097 -0.90
2 1.170 1.152 -1.54
5 1.300 1.289 -0.86
10 1.480 1.493 0.88
20 1.850 1.886 1.95
35 2.500 2.461 -1.56
All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
5
0
V1
TD = 0
TF = 500ns
PW = 100us
PER = 500us
V1 = 0
TR = 10us
V2 = 600
V2
0Vdc
U1
SCS110AM_P
V(N16650)
10mV 100mV 1.0V 10V 100V 1.0KV
I(V2)/(600V/10us)
10pF
100pF
1.0nF
Junction Capacitance Characteristic
Circuit Simulation result
Evaluation circuit
All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
6
Comparison Graph
Circuit Simulation result
Comparison table
VR(V)
CT (pF)
%Error
Measurement Simulation
0.01 588.1 573.7 -2.45
0.1 560.2 557.2 -0.53
1 440.6 437.8 -0.63
10 185.0 180.4 -2.49
100 68.5 66.7 -2.63
200 53.0 55.6 4.91
500 48.0 47.7 -0.62
All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
7
V1
0Vdc
R1
100m
0
U1
SCS110AM_P
V_V1
0V 100V 200V 300V 400V 500V 600V
I(R1)
1.0nA
10nA
100nA
1.0uA
10uA
100uA
Reverse Characteristic
Circuit Simulation result
Evaluation circuit
All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
8
Comparison Graph
Circuit Simulation result
Comparison table
IR (uA)
VR (V)
%Error
Measurement Simulation
0.02 385.0 397.5 3.25
0.05 438.0 438.4 0.09
0.1 470.0 468.3 -0.36
0.2 500.0 497.8 -0.44
0.5 538.0 536.6 -0.26
1 565.0 565.8 0.14
2.3 600.0 600.0 0.00

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SPICE MODEL of SCS110AM (Professional Model) in SPICE PARK

  • 1. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 1 Device Modeling Report Bee Technologies Inc. COMPONENTS: SiC Schottky Barrier Diode PART NUMBER: SCS110AM MANUFACTURER: ROHM REAMARK: POFESSIONAL MODEL
  • 2. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 2 Circuit Configuration DIODE MODEL PARAMETERS PSpice model parameter Model description IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap
  • 3. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 3 U1 SCS110AM_P R1 0.01m V1 0Vdc 0 V_V1 0V 0.5V 1.0V 1.5V 2.0V 2.5V I(R1) 1.0mA 10mA 100mA 1.0A 10A 100A Forward Current Characteristics Circuit Simulation result Evaluation circuit
  • 4. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 4 Comparison Graph Circuit Simulation result Comparison table IF (A) VF (V) %Error Measurement Simulation 0.01 0.940 0.941 0.11 0.1 1.010 1.000 -0.99 1 1.107 1.097 -0.90 2 1.170 1.152 -1.54 5 1.300 1.289 -0.86 10 1.480 1.493 0.88 20 1.850 1.886 1.95 35 2.500 2.461 -1.56
  • 5. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 5 0 V1 TD = 0 TF = 500ns PW = 100us PER = 500us V1 = 0 TR = 10us V2 = 600 V2 0Vdc U1 SCS110AM_P V(N16650) 10mV 100mV 1.0V 10V 100V 1.0KV I(V2)/(600V/10us) 10pF 100pF 1.0nF Junction Capacitance Characteristic Circuit Simulation result Evaluation circuit
  • 6. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 6 Comparison Graph Circuit Simulation result Comparison table VR(V) CT (pF) %Error Measurement Simulation 0.01 588.1 573.7 -2.45 0.1 560.2 557.2 -0.53 1 440.6 437.8 -0.63 10 185.0 180.4 -2.49 100 68.5 66.7 -2.63 200 53.0 55.6 4.91 500 48.0 47.7 -0.62
  • 7. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 7 V1 0Vdc R1 100m 0 U1 SCS110AM_P V_V1 0V 100V 200V 300V 400V 500V 600V I(R1) 1.0nA 10nA 100nA 1.0uA 10uA 100uA Reverse Characteristic Circuit Simulation result Evaluation circuit
  • 8. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 8 Comparison Graph Circuit Simulation result Comparison table IR (uA) VR (V) %Error Measurement Simulation 0.02 385.0 397.5 3.25 0.05 438.0 438.4 0.09 0.1 470.0 468.3 -0.36 0.2 500.0 497.8 -0.44 0.5 538.0 536.6 -0.26 1 565.0 565.8 0.14 2.3 600.0 600.0 0.00