Bee Technologies Device Modeling Report for SiC Schottky Barrier Diode
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This document provides a device modeling report for a SiC Schottky Barrier Diode with part number SCS220KE2HR. It includes the diode model parameters, circuit simulations of the forward and reverse current characteristics and junction capacitance, as well as comparison tables showing good agreement between measurement and simulation results. Evaluation circuits are provided and comparison graphs show the forward characteristic, junction capacitance characteristic, and reverse characteristic.
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Bee Technologies Device Modeling Report for SiC Schottky Barrier Diode
- 1. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 1 Device Modeling Report Bee Technologies Inc. COMPONENTS: SiC Schottky Barrier Diode PART NUMBER: SCS220KE2HR MANUFACTURER: ROHM REMARK: Professional Model
- 2. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 2 CASE (1) (2) (3) Circuit Configuration DIODE MODEL PARAMETERS PSpice model parameter Model description IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap
- 3. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 3 R2 100MEG U1 SCS220KE2HR R1 0.01m V1 0Vdc 0 V _ V 1 0V 0.5V 1.0V 1.5V 2.0V 2.5V I(R1) 1.0mA 10mA 100mA 1.0A 10A 100A Forward Current Characteristics Circuit Simulation result Evaluation circuit
- 4. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 4 Comparison Graph Circuit Simulation result Comparison table IF (A) VF (V) %Error Measurement Simulation 0.001 0.747 0.745 -0.27 0.01 0.806 0.805 -0.12 0.1 0.870 0.868 -0.23 1 0.970 0.964 -0.62 2 1.020 1.022 0.20 5 1.150 1.167 1.48 10 1.400 1.386 -1.00 20 1.800 1.802 0.11
- 5. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 5 V ( R ) 10mV 100mV 1.0V 10V 100V 1.0KV I(V2)/(1200V/10u) 10p 100p 1.0n 0 R V1 TD = 0 TF = 100ns PW = 100us PER = 10m V1 = 0 TR = 10us V2 = 1200 V2 0Vdc R2 100MEG U1 SCS220KE2HR Junction Capacitance Characteristic Circuit Simulation result Evaluation circuit
- 6. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 6 Comparison Graph Circuit Simulation result Comparison table VR(V) Ct (pF) %Error Measurement Simulation 0.01 710.000 702.300 -1.08 0.1 700.000 684.000 -2.29 1 530.000 532.100 0.40 10 235.000 223.800 -4.77 20 168.000 160.100 -4.70 50 110.000 104.800 -4.73 100 80.000 79.000 -1.25 200 59.500 62.300 4.71 500 47.000 49.120 4.51 1000 42.000 43.380 3.29
- 7. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 7 V _ V 1 0V 0.5KV 1.0KV 1.2KV I(R1) 1.0nA 10nA 100nA 1.0uA 10uA 100uA U1 V1 SCS220KE2HR 0Vdc R1 100m 0 R2 1000G Reverse Characteristic Circuit Simulation result Evaluation circuit
- 8. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 8 Comparison Graph Circuit Simulation result Comparison table IR (uA) VR (V) %Error Measurement Simulation 0.001 90.000 100.244 11.38 0.01 530.000 438.400 -17.28 0.1 880.000 763.300 -13.26 1 1085.000 1074.000 -1.01 6 1200.000 1315.000 9.58