SPICE MODEL of SCS220KGHR (Professional Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
1
Device Modeling Report
Bee Technologies Inc.
COMPONENTS: SiC Schottky Barrier Diode
PART NUMBER: SCS220KGHR
MANUFACTURER: ROHM
REMARK: Professional Model

2. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
2
(2) (3)
(1)
Circuit Configuration
DIODE MODEL PARAMETERS
PSpice
model
parameter
Model description
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap

3. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
3
U1
SCS220KGHR
R1
0.01m
V1
0Vdc
0
R2
100MEG
V _ V 1
0V 0.5V 1.0V 1.5V 2.0V 2.5V
I(R1)
1.0mA
10mA
100mA
1.0A
10A
100A
Forward Current Characteristics
Circuit Simulation result
Evaluation circuit

4. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
4
Comparison Graph Circuit Simulation result
Comparison table
IF (A) VF (V) %Error Measurement Simulation 0.001 0.740 0.738 -0.27 0.01 0.798 0.797 -0.13 0.1 0.860 0.860 0.00 1 0.940 0.943 0.32 2 0.985 0.987 0.20 5 1.080 1.078 -0.19 10 1.200 1.197 -0.25 20 1.400 1.401 0.07

5. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
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V ( R )
10mV 100mV 1.0V 10V 100V 1.0KV
I(V2)/(1200V/10u)
10p
100p
1.0n
10n
0
R
V1
TD = 0
TF = 100ns
PW = 100us
PER = 10m
V1 = 0
TR = 10us
V2 = 1200
V2
0Vdc
R2
100MEG
U1
SCS220KGHR
Junction Capacitance Characteristic
Circuit Simulation result
Evaluation circuit

6. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
6
Comparison Graph Circuit Simulation result
Comparison table
VR(V) Ct (pF) %Error Measurement Simulation 0.01 1500.000 1446.000 -3.60 0.1 1450.000 1416.000 -2.34 1 1020.000 1022.000 0.20 10 435.000 415.700 -4.44 20 317.000 303.000 -4.42 50 213.000 204.000 -4.23 100 160.000 156.210 -2.37 200 122.000 124.060 1.69 500 92.800 97.350 4.90 1000 85.000 84.893 -0.13

7. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
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V _ V 1
0V 0.2KV 0.4KV 0.6KV 0.8KV 1.0KV 1.2KV
I(R1)
1.0nA
10nA
100nA
1.0uA
10uA
100uA
V1
0Vdc
R1
100m
0
R2
100G
U1
SCS220KGHR
Reverse Characteristic
Circuit Simulation result
Evaluation circuit

8. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
8
Comparison Graph Circuit Simulation result
Comparison table
IR (uA) VR (V) %Error Measurement Simulation 0.002 100.000 158.231 58.23 0.01 420.000 379.727 -9.59 0.1 800.000 692.500 -13.44 1 1040.000 1001.000 -3.75 10 1200.000 1269.000 5.75