SPICE MODEL of SSM6J206FE (Professional+BDP Model) in SPICE PARK

Device Modeling Report

COMPONENTS: Power MOSFET (Professional)
PART NUMBER: SSM6J206FE
MANUFACTURER: TOSHIBA
REMARK: P Channel Model
Body Diode (Professional) / ESD Protection Diode

Bee Technologies Inc.

All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

Circuit Configuration


MOSFET MODEL

Pspice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Modility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility


Transconductance Characteristic

Circuit Simulation Result

10

9

8

7

6
gfs

5

4

3

2 Measurement
Simulation
1
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
- ID - Drain Current - A

Comparison table

gfs
Id(A) Error(%)
Measurement Simulation
-0.1 1.400 1.429 2.071
-0.2 2.000 2.000 0.000
-0.5 2.750 2.778 1.018
-1 3.950 4.000 1.266
-2 5.500 5.714 3.891


Vgs-Id Characteristic

Circuit Simulation result
-10A

-10mA
0V -0.2V -0.6V -1.0V -1.4V -1.8V -2.2V
I(VD_Sense)
V_VGS

Evaluation circuit

VD_Sense

0Vdc

U12

SSM6J206FE VDS
-3Vdc

VGS

0


Comparison Graph


2
Measurement
BeeTech

1.5
- ID - Drain Current - A

1

0.5

0
0.0 1.0 2.0 3.0
- VGS - Gate to Source Voltage - V

Simulation Result

VGS(V)
ID(A) Error (%)
-0.01 0.930 0.939 0.968
-0.02 0.950 0.958 0.842
-0.05 0.990 0.998 0.808
-0.1 1.020 1.042 2.157
-0.2 1.100 1.104 0.364
-0.5 1.200 1.229 2.417
-1 1.330 1.373 3.233
-2 1.500 1.581 5.400


Rds(on) Characteristic

-1.2A

-0.8A

-0.4A

0A
0V -50mV -100mV -150mV
I(VD_Sense)
V_VDS

Evaluation circuit

VD_Sense

0Vdc

U12

SSM6J206FE VDS
10Vdc

VGS

-4Vdc

0

Simulation Result

ID=-1A, VGS=-4V Measurement Simulation Error (%)
R DS (on) () 0.091 0.091 0.000


Gate Charge Characteristic

-7.0V

-6.0V

-5.0V

-4.0V

-3.0V

-2.0V

-1.0V

0V
0 -1n -2n -3n -4n -5n -6n -7n -8n -9n
V(W1:4)
Time*-1mA
Evaluation circuit

ION = 0uA
IOFF = 1mA
W
-
+
U12
W1 D2 I2
I1 = 0 Dbreak 2
I1
I2 = 1m
TD = 0 V1
TR = 10n
TF = 10n
PW = 600u SSM6J206FE -15
PER = 1000u

0

Simulation Result

VDD=-15V,ID=-2A Measurement Simulation Error (%)
,VGS=-5V
Qgs(nc) 0.800 0.794 -0.750
Qgd(nc) 1.200 1.215 1.250
Qg(nc) 5.200 5.200 0.000


Gate Charge Characteristic Reference

Gate Charge Characteristics

7

6
- Gate Source Voltage (V)

5

4

3

2

1

0
0 1 2 3 4 5 6 7 8 9 10
Gate charge Qg (nC)


Capacitance Characteristic

Measurement
Simulation

Simulation Result

Cbd(pF)
VDS(V) Error(%)
-0.100 60.000 61.000 1.667
-0.200 50.000 49.500 -1.000
-0.500 35.000 36.200 3.429
-1.000 27.000 27.900 3.333
-2.000 31.000 31.600 1.935
-5.000 15.000 15.300 2.000
-10.000 13.000 12.800 -1.538
-20.000 11.000 10.750 -2.273


Switching Time Characteristic

-12V

-10V

-8V

-6V

-4V

-2V

0V

1.96us 2.00us 2.04us 2.08us 2.12us 2.16us
V(L1:2)*4 V(L2:1)
Time

Evaluation circuit

L2 R2
50nH 10

SSM6J206FE

RG L1 U12

PER = 2000u
PW = 10u 30nH V1
TF = 1n 4.7 -10Vdc
TR = 1n R1
TD = 2u
V2 = 5 V2 4.7

V1 = 0

0

Simulation Result

ID=-1A, VDD=-10V
Measurement Simulation Error(%)
VGS=0/2.5V
Ton(ns) 20.000 20.108 0.540


Output Characteristic


-5.0A
-4
-10
-2.5V

-4.0A

-3.0A -1.8V

-2.0A

-1.5V
-1.0A

VGS=-1.2V

0A
0V -0.2V -0.4V -0.6V -0.8V -1.0V
I(VD_Sense)
V_VDS

Evaluation circuit

VD_Sense

0Vdc

U12

SSM6J206FE

VDS
-1Vdc

VGS

0


Forward Current Characteristic


10A

1.0A

100mA

10mA

1.0mA
0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V 1.4V
I(VD_Sense)
V_VDS

Evaluation Circuit

VD_Sense

0Vdc

SSM6J206FE

VDS
U12 10Vdc

0


Comparison Graph


10.00
Measurement
Simulation
Drain reverse current IDR(A)

1.00

0.10

0.01
0.00 0.20 0.40 0.60 0.80 1.00 1.20 1.40 1.60

Source-Drain voltage VSD(V)

Simulation Result

VDS(V) VDS(V)
IDR(A) Measurement Simulation %Error
0.01 0.490 0.486 -0.816
0.02 0.510 0.514 0.784
0.05 0.560 0.557 -0.536
0.100 0.590 0.595 0.847
0.200 0.640 0.640 0.000
0.500 0.710 0.711 0.141
1.000 0.780 0.774 -0.769
2.000 0.840 0.844 0.476


Reverse Recovery Characteristic


400mA

300mA

200mA

100mA

-0mA

-100mA

-200mA

-300mA

-400mA
0.94us 0.98us 1.02us 1.06us 1.10us 1.14us
I(R1)
Evaluation Circuit Time

R1

50

V1 V1 = -9.4v U13
V2 = 10.6v
TD = 10n D6J206
TR = 10ns
TF = 7ns
PW = 1us
PER = 100us

0

Compare Measurement vs. Simulation

Measurement Simulation Error (%)
Trj(ns) 4.300 4.369 1.605
trb(ns) 10.700 10.755 0.514
trr(ns) 15.000 15.124 0.827


Reverse Recovery Characteristic Reference

Trj=4.3(ns)
Trb=10.7(ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50

Example

Relation between trj and trb


Zener Voltage Characteristic


10mA

9mA

8mA

7mA

6mA

5mA

4mA

3mA

2mA

1mA

0A
0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V
I(R1)
V_V1
Evaluation Circuit

R2 100MEG

SSM6J206FE

U12

R1
0.01m

V1
10Vdc

0


Zener Voltage Characteristic Reference


SPICE MODEL of SSM6J206FE (Professional+BDP Model) in SPICE PARK

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SPICE MODEL of SSM6J206FE (Professional+BDP Model) in SPICE PARK