SPICE MODEL of SSM6P54TU (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: Power MOSFET (Model Parameter)
PART NUMBER: SSM6P54TU
MANUFACTURER: TOSHIBA
REMARK: P Channel Model
Body Diode (Parameter) / ESD Protection Diode
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

2. MOSFET MODEL
Pspice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Modility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

3. Transconductance Characteristic
Circuit Simulation Result
3
2.5
2
gfs
1.5
1
0.5
Measurement
Simulation
0
0 100 200 300 400 500
- ID - Drain Current - mA
Comparison table
gfs
-Id(mA) Error(%)
Measurement Simulation
5 0.240 0.250 4.167
10 0.317 0.333 5.047
20 0.483 0.500 3.520
50 0.800 0.833 4.125
100 1.250 1.250 0.000
200 2.000 2.000 0.000
500 2.778 2.778 0.000
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

4. Vgs-Id Characteristic
Circuit Simulation result
-10A
-1.0mA
0V -0.2V -0.6V -1.0V -1.4V -1.8V
I(V3)
V_V1
Evaluation circuit
V3
0Vdc
SSM6P54TU V2
U1
-3
V1
-3
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

5. Comparison Graph
Circuit Simulation Result
10000
Measurement
BeeTech
1000
- ID - Drain Current - mA
100
10
1
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
- VGS - Gate to Source Voltage - V
Simulation Result
-VGS(V)
-ID(mA) Error (%)
Measurement Simulation
5 0.690 0.724 4.928
10 0.720 0.740 2.778
20 0.765 0.763 -0.261
50 0.824 0.807 -2.063
100 0.875 0.857 -2.057
200 0.945 0.928 -1.799
500 1.080 1.070 -0.926
1000 1.245 1.236 -0.723
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

6. Rds(on) Characteristic
Circuit Simulation result
-1.0A
-0.8A
-0.6A
-0.4A
-0.2A
0A
0V -20mV -40mV -60mV -80mV -100mV -120mV -140mV
I(V2)
V_V3
Evaluation circuit
V2
0Vdc
U1
SSM6P54TU V3
0Vdc
V1
-10
0
Simulation Result
ID=-0.6A, VGS=-2.5V Measurement Simulation Error (%)
R DS (on) 162.000 m 161.938 m -0.038
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

7. Gate Charge Characteristic
Circuit Simulation result
-10V
-8V
-6V
-4V
-2V
0V
0 5n 10n 15n 20n
V(W1:4)
Time*1mA
Evaluation circuit
U1
SSM6P54TU
V3
W
- 0
+ I2
D1
W1 Dbreak -1.2
IOFF = 1mA
I1 TD = 0 ION = 0
TF = 1n ROFF = 1e6
PW = 600u RON = 1.0 V1
PER = 1500u
I1 = 0
I2 = 1m -16
TR = 1n
0
Simulation Result
VDD=-16V,ID=-1.2A
Measurement Simulation Error (%)
,VGS=-4V
Qgs 1.750 nC 1.756 nC 0.343
Qgd 3.000 nC 2.991 nC -0.300
Qg 8.300 nC 9.878 nC 19.012
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

8. Capacitance Characteristic
Measurement
Simulation
Simulation Result
Cbd(pF)
VDS(V) Error(%)
Measurement Simulation
0.1 27.300 27.350 0.183
0.2 25.800 25.800 0.000
0.5 22.000 21.900 -0.455
1 16.500 16.650 0.909
2 10.000 10.100 1.000
5 3.000 2.900 -3.333
10 0.900 0.880 -2.222
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

9. Switching Time Characteristic
Circuit Simulation result
-3.0V
-2.5V
-2.0V
-1.5V
-1.0V
-0.5V
0V
1.90us 1.95us 2.00us 2.05us 2.10us 2.15us 2.20us 2.25us
V(L2:2) V(L1:1)/4
Time
Evaluation circuit
L1 R3
30nH
16.67
U1
SSM6P54TU
R1 L2
V1 = 0 30nH -10 V1
V2 = -5 V2 4.7
TD = 2u
TR = 10n
TF = 10n R2
PW = 10u
PER = 50u 4.7
0
Simulation Result
ID=-0.6A, VDD=-10V
Measurement Simulation Error(%)
VGS=-2.5V
ton 19.000 ns 19.026 ns 0.137
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

10. Output Characteristic
Circuit Simulation result
-2.5A
-4.0V
-2.5V
-1.8V
-2.0A
-1.5V
-1.5A
-1.0A
VGS= -1.2V
-0.5A
0A
0V -0.5V -1.0V -1.5V -2.0V
I(V3)
V_V2
Evaluation circuit
V3
0Vdc
U1
V2
SSM6P54TU
0
V1
0
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

11. BODY DIODE SPICE MODEL
Forward Current Characteristic
Circuit Simulation Result
-2.0A
-1.5A
-1.0A
-0.5A
0A
0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V
-I(R1)
V_V1
Evaluation Circuit
R1
0.01m
V1
0Vdc U1
SSM6P54TU
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

12. Comparison Graph
Circuit Simulation Result
2
Measurement
Simulation
1.5
- Drain reverse current IDR(A)
1
0.5
0
0 0.2 0.4 0.6 0.8 1 1.2
Drain Source voltage VDS(V)
Simulation Result
VDS(V) VDS(V)
-IDR(A) %Error
Measurement Simulation
0.100 0.535 0.538 0.561
0.200 0.600 0.596 -0.667
0.500 0.700 0.701 0.143
1.000 0.815 0.810 -0.613
1.500 0.890 0.885 -0.562
2.000 0.955 0.948 -0.733
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

13. Reverse Recovery Characteristic
Circuit Simulation Result
400mA
200mA
0A
-200mA
-400mA
19.94us 19.98us 20.02us 20.06us 20.10us 20.14us
I(RL)
Time
Evaluation Circuit
RL
50
V1 = -9.5 V1 U1
V2 = 10.55 SSM6P54TU
TD = 15n
TR = 10n
TF = 10n
PW = 20u
PER = 50u
0
Compare Measurement vs. Simulation
Measurement Simulation Error (%)
trj 8.000 ns 8.030 ns 0.375
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

14. Reverse Recovery Characteristic Reference
Trj=8.0(ns)
Trb=5.6(ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

15. ESD PROTECTION DIODE SPICE MODEL
Zener Voltage Characteristic
Circuit Simulation Result
10mA
5mA
0A
0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V
I(R1)
V_V1
Evaluation Circuit
U1
SSM6P54TU
R1 R2
1G
0.01m
V1
0Vdc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

16. Zener Voltage Characteristic Reference
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008