SPICE MODEL of XBS303V17R (Standard Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS:
DIODE/ SCHOTTKY RECTIFIER / STANDARD
PART NUMBER: XBS303V17R
MANUFACTURER: TOREX SEMICONDUCTOR
Bee Technologies Inc.
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
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2. PSpice model
Model description
parameter
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
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3. Forward Current Characteristic
Circuit Simulation Result
10A
1.0A
100mA
10mA
0V 200mV 400mV 600mV
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
V1 D1
0Vdc DXBS303V17R
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
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4. Comparison Graph
Circuit Simulation Result
10
Measurement
Simulation
Forward Current:IF (A)
1
0.1
0.01
0 0.2 0.4 0.6
Forward Voltage:VF (V)
Simulation Result
VF (V)
IF (A) %Error
Measurement Simulation
0.01 0.155 0.153 -1.026
0.02 0.173 0.172 -0.775
0.05 0.195 0.196 0.398
0.1 0.215 0.215 -0.147
0.2 0.235 0.235 -0.165
0.5 0.265 0.264 -0.274
1 0.290 0.292 0.724
2 0.330 0.330 -0.114
3 0.360 0.360 -0.106
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
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5. Capacitance Characteristic
Circuit Simulation Result
1.0n
0.8n
0.6n
0.4n
0.2n
0
5V 10V 20V 30V
I(V2)/(30V/10n)
V(N16610)
Evaluation Circuit
V2
0Vdc
V2 = 30 V1 D1
V1 = 0 DXBS303V17R
TD = 0
TR = 10ns
TF = 10ns
PW = 10us
PER = 50us
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
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6. Comparison Graph
Circuit Simulation Result
1000
Measurement
Simulation
Inter-Terminal Capacity:Ct (pF)
800
600
400
200
0
5 15 25
Reverse Voltage:VR(V)
Simulation Result
Ct (pF)
VR (V) %Error
Measurement Simulation
5 200.000 199.773 -0.11
10 150.000 150.632 0.42
15 125.000 126.668 1.33
20 112.000 111.652 -0.31
25 100.000 100.944 0.94
30 93.000 93.030 0.03
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
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7. Reverse Recovery Characteristic
Circuit Simulation Result
20mA
15mA
10mA
5mA
0mA
-5mA
-10mA
-15mA
-20mA
1.6us 1.8us 2.0us 2.2us 2.4us 2.6us
I(R1)
Time
Evaluation Circuit
R1
100
V2 = 1.16V
V1 = -0.85V
TD = 0ns V1 D1
TR = 1ns DXBS303V17R
PW = 2us
TF = 1ns
PER = 50us
0
Compare Measurement vs. Simulation
Parameter Unit Measurement Simulation %Error
trr ns 90.000 90.037 0.04
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
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