SEMIKRON SKiM306GD12E4 1200V 300A IGBT Solderless Module SKIM 63, solderless, sinter technology power module developed for high reliability operation in a light module The SKiM306GD12E4 is a 1200V 300A 6-pack configuration with 3 separated half bridges for high reliability operation. Semikron uses silver sinter technology to increase the durability and pressure contact to obtain a solderless power module. The SKiM306GD12E4 is based on IGBT4 technology from Infineon and CAL4-F diode. Semikron has designed the CAL4-F diode to be very efficient with the IGBT4. The diode has been designed to obtain a good resistance to environment in a non hermetic package and benefits from the expertise of Semikron in the irradiation to reduce the carrier lifetime. The SKIM 63 module is a no baseplate design. The DBC substrates are directly assembled on the heatsink to enhance the power management and reduce the height of the module. The sinter layer is very thin to decrease the thermal resistance and limit the cost of silver material. With a cost close to a classic SAC solder, the sintered joint increases the service life. The report presents a deep technology analysis of the packaging and of the transistors and diodes structures. It also includes production cost analysis and a specific economic comparison with Infineon FS100R12PT4 1200V 100A. COMPLETE TEARDOWN WITH: Detailed photos and identification Analysis of silver sinter, pressure contacts Analysis of transistor and diode structure Manufacturing process flow In-depth economical analysis Manufacturing cost breakdown Selling price estimation Comparison of SKiM306GD12E4 vs. Infineon FS100R12PT4 More information on that report at http://www.i-micronews.com/reports.html

1. DISCLAIMER : System Plus Consulting provides cost studies based on its knowledge of the manufacturing and selling prices of electronic components and systems. The given values are realistic estimates which do not
bind System Plus Consulting nor the manufacturers quoted in the report. System Plus Consulting is in no case responsible for the consequences related to the use which is made of the contents of this report. The
quoted trademarks are property of their owners.
© 2013 by SYSTEM PLUS CONSULTING, all rights reserved. 1
Electronic Costing & Technology Experts
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44200 Nantes – France Phone : +33 (0) 240 180 916 email : info@systemplus.fr
August 2015 - Version 1 - Written by Sylvain Hallereau

2. Semikron – SKiM306GD12E4
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Glossary
1. Overview / Introduction 4
– Executive Summary
– Reverse Costing Methodology
2. Company Profile 8
3. Physical Analysis 13
– Synthesis of the Physical Analysis
– Package analysis
– View and dimensions and marking
– Housing
– Base Plate Cross-Section
– DBC Cross-Section
– SKIM 63 Module
– IGBT Analysis
– Dimension
– Gate Supply Line and Guard Ring
– Trench Gate Cross-Section
– Revelation
– Infineon IGBT4 vs IGBT3
– Diode Analysis
– Dimension
– Guard Ring
– Revelation
4. Manufacturing Process Flow 61
– Overview
– IGBT and Diode Process Flow
– Description of the Wafer Fabrication Units
– IGBT Process Flow
– Diode Process Flow
– Package Process Flow
5. Cost Analysis 76
– Synthesis of the Cost Analysis
– Main Steps of Economic Analysis
– Yields Explanation
– Cost Analysis IGBT
– Wafer Cost Hypothesis
– IGBT Wafer Cost
– Breakdown per process step
– IGBT Probe Cost
– IGBT Die cost
– Cost Analysis Diode
– Wafer Cost Hypothesis
– Diode Wafer Cost
– Breakdown per process step
– Diode Probe Cost
– Diode Die cost
– Cost Analysis SKiM306GD12E4
– Assessing BOM
– DBC Cost
– SKiM306GD12E4 Module Cost
– Yield Synthesis
6. Estimated Manufacturer Price Analysis 107
– Manufacturers ratios
– Estimated manufacturer Price
7. Comparison 110
– Comparison SKiM306GD12E4 and Infineon FS100R12PT4
Contact

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Package:
 Dimensions: 160.0 x 114 x 33 mm
 Number of Pins: 12- screw pin
21- spring pin
 Type: SKiM 63 power module
Skim Module
Diode
IGBT
Diode:
 Code: CAL4-F
 Dimensions: XX x XXmm
 Electrical Connection: XX µm Al wire bonding
 Placement in the package: sintering on DBC
IGBT:
 Code: IGC70T120T
 Dimension: XX x XX mm
 Electrical Connection: XX µm Al wire bonding
 Placement in the package: sintering on DBC.
Screw pin
Spring pin

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Details DBC substrate: Cross-Section SEM view

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© 2014 by SYSTEM PLUS CONSULTING, all rights reserved. 5 Diode die: cross-section SEM view

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7. Semikron – SKiM306GD12E4
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8. Semikron – SKiM306GD12E4
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9. Semikron – SKiM306GD12E4
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Reverse costing analysis represents the best cost/price evaluation given the publically available data, and estimates
completed by industry experts.
Given the hypothesis presented in this analysis, the major sources of correction would lead to a +/- 10% correction on the
manufacturing cost (if all parameters are cumulated).
These results are open for discussion. We can reevaluate this circuit with your information. Please contact us:
o Consulting and Specific Analysis
– North America: Steve LaFerriere, Business Development Manager, Yole Inc
Email: laferriere@yole.fr
– Japan: Yutaka Katano, General Manager, Yole Japan & President, Yole K.K.
Email: katano@yole.fr
– RoW: Jean-Christophe Eloy, President & CEO, Yole Développement
Email: eloy@yole.fr
o Report business
– North America: Steve LaFerriere, Business Development Manager, Yole Inc
Email: laferriere@yole.fr
– Europe: Jérôme Azemar, Business Development Manager, European Office
Email: azemar@yole.fr
– Japan & Asia: Takashi Onozawa, Sales Asia & General Manager, Yole K.K.
Email: onozawa@yole.fr
– Korea: Hailey Yang, Business Development Manager, Korean Office
Email: yang@yole.fr
o Financial services
– Jean-Christophe Eloy, CEO & President
Email: eloy@yole.fr