Will high-frequency and high-power devices benefit from the diamond revolution as a replacement of Si, SiC and GaN? $43M diamond material market in 2020 will be driven mainly by passive devices Diamond materials have been in development for more than 50 years. Besides the traditional tooling applications (drilling, cutting…), the interest in diamond continues to grow for optical and thermal applications, and for new applications in semiconductor devices such as high-power devices and high-frequency devices able to work at elevated temperatures. In fact, diamond’s unique physical and electrical properties, which include: the highest known thermal conductivity, a wide band gap, excellent electrical insulator properties, very high breakdown voltage and very high carrier mobility, make diamond an excellent candidate for electronic devices with ultimate performance. However, the costs of diamond, as well as the remaining technology barriers limit the diamond material market to only a few applications and some high-end devices. The diamond applications in electronic devices, such as high-voltage power electronics, high-frequency high-power devices, and high-power optoelectronic devices (laser diodes, LEDs), are the scope of the report. Both passive (heat spreaders) and active (diodes, transistors) diamond solutions are considered in the market quantification. Despite the high costs of high-quality materials, a large number of players are involved in the 2013 diamond materials market and its largest segment – R&D activities. Two scenarios for 2013-2020 diamond material market growth are presented in the report. According to the base scenario, the diamond materials market for semiconductor devices will surpass $43M and will be represented mainly by heat spreaders used in high-power device thermal management. Access to high-quality diamond material is key for diamond device development Electronic applications, such as Schottky diodes, transistors, etc., require high-quality single-crystalline CVD diamond, which has superior characteristics such as high carrier mobility, long carrier lifetimes, high breakdown fields and high thermal conductivity. High quality low-defect diamond wafers produced from diamond crystal made by High-Pressure High-Temperature (HPHT) method are only a few mm in size. In comparison, the competing semiconductor materials such as SiC are already available in wafer sizes up to 150 mm. For future diamond-based active devices, it is crucial to increase the wafer size above 2-inch with the defect density 100 cm-2 and below. Different approaches to achieve free-standing wafers from thick diamond films are under development. A mosaic type method is currently approaching 2-inch wafer size, but the defect density needs to be reduced. According to our technology roadmap for single crystal diamond wafers... More information on that report at http://www.i-mic

1. Diamond materials for
semiconductor applications
NT the diamond
Will high-frequency and high-power devices benefit from
ME GaN…?
revolution as a replacement of Si, E and
PSiC
P
LO
VE
E
D
LE
YO
Dow corning
© 2013
75, cours Emile ZOLA, F-69100 Villeurbanne, France
Tel: +33 472 83 01 80 - Fax: +33 472 83 01 83
Web: http://www.yole.fr

2. Diamond applications
Applications of diamond in electronic devices
Scope of the report
NT
E
Heat spreaders for high-power
electronics, laser-diodes…
High-power laser windows
Electrochemical/bio
chemical sensors
© 2013 •
2
EM
PP
LO
VE
High-power and high-frequency devices
such as Schottky diodes, transistors…
LE
O
E
D
Y
Cold cathode emitter
UV detectors
UV LEDs
MEMS
AFM tips
Quantum applications
IR windows
Cutting, sawing tools
Overview of diamond applications
Yole Développement

3. Semiconductor technology roadmap for
power electronic devices
Do you see the opportunity in going directly with diamond towards ultimate
applications?
Device performance
NT
E Diamond
EM
PP
LO
VE
.
E
SiC, GaN
D
LE
O
Y
.
Si
Technology and cost barriers
Two approaches within the semiconductor technology roadmap for power electronic devices
Yole Développement
© 2013 •
3

4. Why GaN-on-Diamond for HEMTs?
•
lnGaN/GaN high electron mobility transistors (HEMTs) are actively pursued for high-speed
and high-power applications.
•
However, their performance is limited by the thermal conductivity of the substrates on which
GaN is grown (Si, sapphire, SiC). GaN material itself has very low thermal conductivity.
•
Thanks to using a thin layer of CVD diamond with very high thermal conductivity (8-12
W/(cm.K), the device thermal resistance can be significantly reduced, providing possibility
to extract more power from the device (at given frequency and given ambient temperature).
NT
E
Si (400 µm)
YO
LE
E
D
EM
PP
LO
VE
Diamond (25µm)
12 W/(cm.K)
Lower
thickness
1.5 W/(cm.K)
Active layers (~20 nm only!)
AlGaN/AlN/GaN epi (~1 µm)
Much higher thermal
conductivity
Better power
extraction from
the device
Thinner diamond layer and its better thermal properties compared to silicon makes the use of GaN-on-Diamond approach very promising
for high-power devices.
Group4Labs, Yole Développement
© 2013 •
4

5. Costs of diamond materials
Diamond vs other other semiconductor material
•
Despite promising diamond properties, the use of diamond for real applications is
still hampered by its extremely high manufacturing costs.
NT
E
LE
O
E
D
EM
PP
LO
VE
Y
Comparison of prices of different semiconductor materials
Yole Développement, October 2013
© 2013 •
5

6. Diamond Material Market Value
Base scenario
The market of diamond material for electronic applications will reach 43.3 M$ in 2020.
NT
E
LE
O
E
D
EM
PP
LO
VE
Y
Diamond Material Market forecast 2013-2020 – base scenario
Yole Développement
© 2013 •
6

7. Diamond R&D and Technology Roadmap
History of diamond crystal and film development
Diamond technology has been developed since more than 60 years. The achievement
of commercially available diamond-based devices is a long-term run!
Xxxxxx
xxxx
xxxxxx
Xxxxxxxxxxx
xxxxxxxxxx (Eversole)
LE
YO
1954
Xxxxx
xxxx
xxx
(GE)
1960
E
D
1981
Xxxxx
xxxxxxxxxxxxx
(Setaka, NRIM)
1980
1990
>60 years of development
© 2013 •
7
Xxxxxx
(E6)
2002
Xxxxxxxx
(Argonne laboratory)
1994
2013
Xxxxxx
xxxx
Xxxx xxxxxx
(Sumitomo Electric)
E6
1970
2007
(Sumitomo Electric)
1966
1952
EM
PP
LO
VE
Xxxx
xxx
xxxxxxxxxx
Patent on CVD
diamond growth issued
1950
NT
E
1983
1954
2000
2010

8. Examples of diamond heat spreader products
Spreader
type
NT
E
Device level
HPHT
SC
Poly
CVD
diamon
d
HPHT SC
-
“CVD
diamon
d”
EM
PP
LO
VE
Product
name
XXXX
Thermal
conductivity
(W/mK)
2,000
Supplier
XXXX
LE
1,400
YO
XXXX
XXXX
Poly CVD
diamond
DC arc
CVD poly
Diamond
HF CVD
poly
diamond
Poly
diamon
d
XXX™
Silicon-onDiamond
(SOD)
GaNonDiamo
nd
wafer
XXXX
XXXX
XXX
Up to
100mm
wafer
1,0002,000
~1,000
600-800
1,0001,400
XXXX
E
D
CDT-1000
XXXX
XXXX
XXXX
Examples of diamond heat spreader products
8
Poly
diamond
XXXX
Size
© 2013 •
Poly
diamond
Up to
100mm
wafer
Material
Poly
CVD
diamond
Circuit level
Yole Développement

9. ASP of different diamond materials
•
The Average Selling Price (ASP) for a given diamond material depends on
numerous factors.
•
Large price variations have been therefore observed depending mainly on the
grade of diamond material (mechanical, optical, electronic, electronic+…), wafer
size and thickness and quantity ordered.
NT
E
LE
O
E
D
Diamond material
EM
PP
LO
VE
ASP ($/mm3)
Y diamond wafer
Heteroepitaxially-grown
Not commercially available yet
Self-standing CVD polycrystalline wafer
$X.5 - $X
Single-crystal wafer
$XX - $X00
Comparison of 2013 Average Selling Prices for different diamond materials
© 2013 •
9
Yole Développement

10. Diamond Material Market Demand
Aggressive scenario
NT
E
LE
O
E
D
EM
PP
LO
VE
Y
Diamond Material Demand – aggressive scenario. The demand for R&D purposes is not included here.
Yole Développement
© 2013 •
10

11. Diamond wafer size is key for diamond active
device development
Wafers per crystal
The main barrier in the development of electronic devices based on diamond wafer is a very
small size of diamond wafers and a low number of wafers produced from one single diamond
crystal resulting in very high costs.
XX0
EM
PP
LO
VE
Silicon
LE
X0
YO
E
D
NT
E
SiC
X0
X0
X5
XX0
XX0
XX0
Comparison of silicon, SiC and diamond wafer sizes (axis not in scale)
© 2013 •
11
Yole Développement
XX0 Wafer size (mm)

12. Single crystal growth
Comparison of HPHT and MWCVD techniques for single-crystal
diamond growth
High-Pressure High-Temperature
(HPHT)
Microwave Chemical Vapor
Deposition (MW CVD)
Principle
Replication of natural diamond growth
conditions deep within the earth, producing
high temperatures and high pressures
Gas-phase synthesis, which activates hydrogen
and methane gas by discharging plasma to grow
diamond on seed crystals
Equipment
Press apparatus able to generate very high
pressures and temperatures
MW CVD reactor
No of crystals per
equipment per growth run
X
Growth rate
Few mm in X days
Very small (half a mm per XX)
Product
High-purity and low-defect single crystal
diamonds
Large, single crystal diamonds
Thin slabs (<X0µm) available
< X0 mm
~X0mm x X0mm
Up to XXmm x XXmm using mosaic method
Very limited
Less limited than HPHT
Cost
Extreme high
Very high (possibility of cost reduction)
Main players
Gemesis, Element Six, Sumitomo
Many Chinese players
Indian players (for jewelry)
EDP Corp., Scio Diamond Technology
Corporation, IIa Technologies
Main applications
Jewelry
Substrates for MWCVD crystal growth,
abrasives, cutting and drilling tools…
Industrial applications
Jewelry
Crystal size
Scalability
© 2013 •
12
Y
LE
O
E
D
NT
E
EM
PP
LO
VE
Up to X0

13. Diamond wafer fabrication
Diamond wafer: State-of-the-art
Wafer type
Growth technique
NT
E
Size
Defect density
X to XX mm
EM
PP
LO
VE
HPHT
CVD
Wafer
(further size increase
very limited)
(potential for further
size increase)
~10X cm-2
X to XX mm
Insulating
LE
Mosaic wafer
P+ type
YO
E
D
CVD
Wafer
(potential for further
size increase)
HPHT
Wafer
XX x XX mm2
XX x XX mm2
CVD
N+ type
Current status of diamond wafer manufacturing
© 2013 •
13
Yole Développement, AIST
~10X cm-2
~10X cm-2

14. Diamond film growth
Comparison of different growth techniques
High growth rate, needed for diamond film cost reduction, is usually incompatible with high film
quality, thickness uniformity and deposition on large areas.
NT reduction
E Cost
Plasma Torch
X0-XX0 µm/h
Growth rate
~X
cm2
LE
YO
EM
PP
LO
VE
target
E MW CVD
D
0.X-X0 µm/h
Ø XX0 mm
HF CVD
0.X-0.X µm/h
> 0.X m2
Deposition area
Comparison of growth rate and deposition area for different diamond film growth techniques
© 2013 •
14
Yole Développement

15. Equipment makers
Overview
Application
Company
Diamond deposition
tool
Crystal grower
Company (US)
MW CVD
Company (US)
MW CVD
Company (US)
HPHT
Company (DE)
MW CVD
LE
O
Company (US)
Company (UK)
Company (UK)
Company (FR)
E
D
Ultrahigh pressure
press (in the past)
Company (JP)
Company (CH)
EM
PP
LO
VE
MW CVD
Company (Luxembourg)
Y
MWCVD
MW plasma (ECR)
HF CVD
ICP, RIE
Laser equipment for
precise micromachining
MW CVD
Company (CH)
Laser equipment
Company (US)
MWCVD (crystal)
Company (US)
HF CVD, DC arc plasma jet
Equipment makers and products & activities within the diamond business
© 2013 •
15
Diamond
processing
NT
E
HF CVD
Company (US)
Diamond
etching
Yole Développement

16. Diamond R&D
EU R&D projects related to diamond applications in electronics
NT
E
LE
O
E
D
EM
PP
LO
VE
Y
Examples of R&D projects related applications of diamond in electronics
© 2013 •
16
Yole Développement

17. Company and R&D institution profiles
Synthesis
Name
Country
Founded
Employees
Business model
Company
UK
2008
5
Private company, development of
diamond based devices
Company
UK
1947
Products
NT
E
Comments
HPHT and CVD diamond
materials for mechanical,
optical and electronic
applications
Non-diamond materials
(tungsten carbide, boron
nitride…)
Private company
owned by XXX and
XXX
Recently acquired
XXX
A fabless start-up company
CVD diamond, GaN on
diamond
Since May 2013
operates as a
subsidiary of XXX
NA
Development and manufacturing of
diamond single crystals mainly for
jewelry
Cut diamonds
Privately held
Proprietary HPHT
technology
<10
Development and manufacturing of
a proprietary MWCVD plasma
source
CVD equipment for
diamond and other
maetrials
2,500
E
D
Company
USA
2003
Company
USA
1996
Company
DE
1997
Company
CN
2011
6 (sales) +
production
Manufacturing of diamond materials
mainly for mechanical applications
Diamond abrasives and
heat spreaders
Formerly XXXX
Company
USA
2012
<10
Supplier of MWCVD systems and
distribution of single crystal
diamond materials
MWCVD systems
formerly a
division of XXXX
© 2013 •
17
<10
EM
PP
LO
VE
Development and manufacturing of
diamond products
Y
LE
O

18. Compound Semiconductors reports from YOLE
Status of the LED
Industry
Sapphire for
Display, Defense,
Consumer…
SiC Market
New!
New!
III-V Epitaxy Substrates
& Equipment Market
LED Packaging
LE
O
E
D
Y
UV LED MARKET
© 2013 •
18
NT
E
EM
PP
LO
VE
New!
LED Front End
Manufacturing
Technologies
Sapphire
CoSim+
Sapphire for LED
GaAs Wafer Market
& Applications

19. Yole Activities
MEDIA
REPORTS
CONSULTING
News portal/Technology magazines/
Webcasts/Communication services
Market & technology/Patent
Investigation/Reverse costing
Market research/Technology
& Strategy/Patent Investigation/
Reverse costing
NT
E
LE
O
E
D
EM
PP
LO
VE
www.yole.fr
YOLE FINANCE
M&A/ Due Diligence/ Fundraising/
Technology brokerage
Y
www.yolefinance.fr
SISTER COMPANY
Reverse engineering & costing/
Cost simulation tools
© 2013 2012
© • 19
19

20. For More Information…
Please take a look at our websites:
www.yole.fr
NT
E
Yole Développement corporate website
www.i-micronews.com
EM
P
PInformation
Our Offices & Contact
LO
www.systemplus.fr
VE
Sister company; expert E teardown & reverse costing analysis
D in
LE
Owww.yolefinance.com
YYole business unit dedicated to financial services
Separate
News Portal - free online registration to our publications
Follow us on
© 2013 •
20

21. Our Offices & Contact Information
Europe Office
• Yves Devigne, Europe Business Development Manager,
Cell: 33 6 75 80 08 25 - Email: devigne@yole.fr
NT
E
• David Jourdan, Headquarter Sales Coordination & Customer Service,
Tel: 33 472 83 01 90, Email: jourdan@yole.fr
USA Office
EM
PP
LO
VE
• Michael McLaughlin, Business Development Manager,
Phone: (650) 931 2552 - Cell: (408) 839 7178 - Email: mclaughlin@yole.fr
• Jeff Edwards, Sales Associate, Yole Inc., Cell: (972) 333 0986- Email: edwards@yole.fr
LE
O
Japan Office
E
D
• For custom research: Yutaka Katano, General Manager, Yole Japan & President, Yole K.K.
Phone: (81) 362 693 457 - Cell: (81) 80 3440 6466 - Fax: (81) 362 693 448 - Email: katano@yole.fr
Y
• For reports business: Takashi Onozawa, Sales Asia & General Manager, Yole K.K.
Email: onozawa@yole.fr
Korea Office
• Hailey Yang, Business Development Manager
Phone : (82) 2 2010 883 - Cell: (82) 10 4097 5810 - Fax: (82) 2 2010 8899 - Email: yang@yole.fr
© 2013 •
21