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Jorge Alfredo Portugal Zvietcovich
TRANSISTOR JFET N-CH 30V TO-92 - 2N5638RLRAG

Especificaciones Técnicas
Technical/Catalog Information          2N5638RLRAG
Vendor                                 ON Semiconductor
Category                               Discrete Semiconductor Products
Mounting Type                          Through Hole
FET Type                               N-Channel
Drain to Source Voltage (Vdss)         30V
Current - Drain (Idss) @ Vds (Vgs=0)   50mA @ 20V
Input Capacitance (Ciss) @ Vds         10pF @ 12V (VGS)
Power - Max                            310mW
Packaging                              Tape & Reel (TR)

Package / Case                         TO-226-3, TO-92-3 (TO-226AA) Formed Leads

Voltage - Cutoff (VGS off) @ Id        -
Voltage - Breakdown (V(BR)GSS)         35V
Resistance - RDS(On)                   30 Ohm
Current Drain (Id) - Max               -
Lead Free Status                       Lead Free
RoHS Status                            RoHS Compliant
Other Names                            2N5638RLRAG
TRANSISTOR 350V DE 5KA 5X7.6M M


Especificaciones Técnicas
                                                  Tubo de descarga de
Modelo
                                                  gas
                                                                        Con el alambre de
                                                  ZM 576 3R 350B
                                                                        plomo
Tipo: ZM 576 3R 350B
                                                                        Con el alambre de
       ZM 576 3R 350BF
                                                  ZM 576 3R 350BF       plomo, a prueba de
                                                                        averías
                                                  Diámetro: 5m m        ±0.2mm
Ø 5mmX7.5m mde la dimensión
                                                  Longitud: 7.5m m      ±0.2mm
Nominal. C.C. chispear-sobre voltaje              350                   V
Tolerancia de CONTRA                              ±20                   %
Impluse chispear-sobre voltaje en los μs 1KV/     ≤900                  V

Corriente derivada de Impluse (onda 8/20μs)       5                     KA
Corriente derivada del impulso 10/1000μs          100                   A/Time
Corriente derivada de alternancia (50HZ, 10 veces) 5                    A
Resistencia de aislamiento                        >109                  Ω
Capacitancia en 1MHz                              ≤1.5                  Picofaradio
Voltaje 135                                       del mantenimiento     VDC
TRANSISTOR BLF278 MOSFET

 Especificaciones Técnicas
Datasheets                   BLF278
Category                     Discrete Semiconductor Products
Family                       RF FETs
Series                       -
Transistor Type              2 N-Channel (Dual)
Frequency                    108MHz
Gain                         22dB
Voltage - Test               50V
Current Rating               18ª
Noise Figure                 -
Current - Test               100mA
Power - Output               300W
Voltage - Rated              125V
Package / Case               SOT-262A1
Supplier Device Package      CDFM4
Other Names
                             568-2412 / 933978520112 / BLF278 / BLF278-ND
TRANSISTOR NPN 40V 500MA 16-SOIC


Especificaciones Técnicas
Category                                      Discrete Semiconductor Products
Family                                        Transistors (BJT) - Arrays
Series                                        -
Transistor Type                               4 NPN (Quad)
Current - Collector (Ic) (Max)                500mA
Voltage - Collector Emitter Breakdown (Max)   40V
Vce Saturation (Max) @ Ib, Ic                 1V @ 50mA, 500mA
Current - Collector Cutoff (Max)              -
DC Current Gain (hFE) (Min) @ Ic, Vce         100 @ 150mA, 10V
Power - Max                                   1W
Frequency - Transition                        300MHz
Mounting Type                                 Surface Mount
Package / Case                                16-SOIC (0.154", 3.90mm Width)
Supplier Device Package                       16-SOIC
Other Names                                   MMPQ2222ATR
TRANS ARRAY PNP/N-CH 40V SOT363




Especificaciones Técnicas
Category                       Discrete Semiconductor Products
Family                         Transistors - Special Purpose
Series                         -
Transistor Type                PNP, N-Channel
Applications                   General Purpose
Voltage - Rated                40V PNP, 60V N-Channel
Current Rating                 600mA PNP, 115mA N-Channel
Mounting Type                  Surface Mount
Package / Case                 6-TSSOP, SC-88, SOT-363
Supplier Device Package        SOT-363
Other Names                    CTA2P1N-FDITR

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  • 2. TRANSISTOR JFET N-CH 30V TO-92 - 2N5638RLRAG Especificaciones Técnicas Technical/Catalog Information 2N5638RLRAG Vendor ON Semiconductor Category Discrete Semiconductor Products Mounting Type Through Hole FET Type N-Channel Drain to Source Voltage (Vdss) 30V Current - Drain (Idss) @ Vds (Vgs=0) 50mA @ 20V Input Capacitance (Ciss) @ Vds 10pF @ 12V (VGS) Power - Max 310mW Packaging Tape & Reel (TR) Package / Case TO-226-3, TO-92-3 (TO-226AA) Formed Leads Voltage - Cutoff (VGS off) @ Id - Voltage - Breakdown (V(BR)GSS) 35V Resistance - RDS(On) 30 Ohm Current Drain (Id) - Max - Lead Free Status Lead Free RoHS Status RoHS Compliant Other Names 2N5638RLRAG
  • 3. TRANSISTOR 350V DE 5KA 5X7.6M M Especificaciones Técnicas Tubo de descarga de Modelo gas Con el alambre de ZM 576 3R 350B plomo Tipo: ZM 576 3R 350B Con el alambre de ZM 576 3R 350BF ZM 576 3R 350BF plomo, a prueba de averías Diámetro: 5m m ±0.2mm Ø 5mmX7.5m mde la dimensión Longitud: 7.5m m ±0.2mm Nominal. C.C. chispear-sobre voltaje 350 V Tolerancia de CONTRA ±20 % Impluse chispear-sobre voltaje en los μs 1KV/ ≤900 V Corriente derivada de Impluse (onda 8/20μs) 5 KA Corriente derivada del impulso 10/1000μs 100 A/Time Corriente derivada de alternancia (50HZ, 10 veces) 5 A Resistencia de aislamiento >109 Ω Capacitancia en 1MHz ≤1.5 Picofaradio Voltaje 135 del mantenimiento VDC
  • 4. TRANSISTOR BLF278 MOSFET Especificaciones Técnicas Datasheets BLF278 Category Discrete Semiconductor Products Family RF FETs Series - Transistor Type 2 N-Channel (Dual) Frequency 108MHz Gain 22dB Voltage - Test 50V Current Rating 18ª Noise Figure - Current - Test 100mA Power - Output 300W Voltage - Rated 125V Package / Case SOT-262A1 Supplier Device Package CDFM4 Other Names 568-2412 / 933978520112 / BLF278 / BLF278-ND
  • 5. TRANSISTOR NPN 40V 500MA 16-SOIC Especificaciones Técnicas Category Discrete Semiconductor Products Family Transistors (BJT) - Arrays Series - Transistor Type 4 NPN (Quad) Current - Collector (Ic) (Max) 500mA Voltage - Collector Emitter Breakdown (Max) 40V Vce Saturation (Max) @ Ib, Ic 1V @ 50mA, 500mA Current - Collector Cutoff (Max) - DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 10V Power - Max 1W Frequency - Transition 300MHz Mounting Type Surface Mount Package / Case 16-SOIC (0.154", 3.90mm Width) Supplier Device Package 16-SOIC Other Names MMPQ2222ATR
  • 6. TRANS ARRAY PNP/N-CH 40V SOT363 Especificaciones Técnicas Category Discrete Semiconductor Products Family Transistors - Special Purpose Series - Transistor Type PNP, N-Channel Applications General Purpose Voltage - Rated 40V PNP, 60V N-Channel Current Rating 600mA PNP, 115mA N-Channel Mounting Type Surface Mount Package / Case 6-TSSOP, SC-88, SOT-363 Supplier Device Package SOT-363 Other Names CTA2P1N-FDITR