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Basic Nanotechnology   What’s the Technology Landscape?
State of basic research
Highlights - Metrology ,[object Object],[object Object],[object Object]
Highlights - Modeling ,[object Object],[object Object],[object Object]
Highlights - Manufacturing ,[object Object],[object Object],[object Object]
Highlights - MEMS ,[object Object],[object Object],[object Object]
Highlights - Policy ,[object Object],[object Object],[object Object]
Tools & Techniques ,[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object]
Microscopy ,[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object]
Metrology ,[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object]
Simulation ,[object Object],[object Object],[object Object],[object Object],[object Object],[object Object]
Crystallography ,[object Object],[object Object],[object Object]
Interferometry ,[object Object],[object Object],[object Object],[object Object],[object Object]
Chemical Synthesis ,[object Object],[object Object],[object Object],[object Object],[object Object]
Plasma, et al ,[object Object],[object Object],[object Object],[object Object],[object Object]
Lithography ,[object Object],[object Object],[object Object],[object Object]
Recent Progress - AFMS ,[object Object]
Recent Progress - Software ,[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],Sample of recent progress - software techniques - molecular modeling
Recent Progress - Materials ,[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object]
Recent Progress - Electronics ,[object Object],[object Object],[object Object]
Recent Progress Energy/Power ,[object Object],[object Object],[object Object],[object Object]
Recent Progress – Life Sciences ,[object Object]
Grand Challenges ,[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object]
Grand Challenges ,[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object]
Pace of Progress ,[object Object]
Break
Basic Nanotechnology   Primer on manufacturing processes
Primer on manufacturing processes ,[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object]
Bottom-up self assembly ,[object Object],[object Object],[object Object]
Self Assembly ,[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],main(){char *c="main(){char *c=%c%s%c;printf(c,34,c,34);}";printf(c,34,c,34);}
intrinsic, autonomous ,[object Object],[object Object],[object Object]
biomimetic, controlled ,[object Object],[object Object]
Top-down assembly ,[object Object]
Lithography
Lithography
Lithography Resolution to 65 nm (10 nm with x-rays) Vacuum environment Multiple layer writing Current standard for semiconductor industry
Lithography
dip-pen lithography
dip-pen lithography ,[object Object],[object Object],[object Object],[object Object]
soft lithography & nanoscale printing
soft lithography & nanoscale printing Resolution 100 nm Liquid environment Multiple layer writing Wide areas & rapid production rates A stamp was molded off the master and used for printing alkanethiols onto a gold layer, followed by a selective etch to develop the pattern. IBM Zurich
e-beam and deep UV lithography
e-beam and deep UV lithography Resolution 20 nm Vacuum environment Slow writing speed Multiple beam technologies in development Direct write & direct exposure
Electromagnetic Spectrum
Other production processes
vapor deposition ,[object Object]
vapor deposition ,[object Object],[object Object],[object Object],[object Object],[object Object],[object Object]
evaporation ,[object Object]
evaporation ,[object Object],[object Object],[object Object],[object Object],[object Object],'The Sounds of Earth' copper with gold plating placed on Voyager.  Two hours of sound and movie plus some digital data: pictures and a message from Jimmy Carter.
combustion Combustion wire process Combustion powder process Burning a material such that the products of its combustion  condense on a cooler surface.
combustion ,[object Object],[object Object],[object Object]
thermal plasma ,[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object]
thermal plasma ,[object Object],[object Object],[object Object],[object Object]
milling ,[object Object],[object Object],[object Object]
milling ,[object Object],[object Object],[object Object],[object Object],[object Object],[object Object]
cavitation ,[object Object]
cavitation ,[object Object],[object Object],[object Object],[object Object]
coating (spin or dip) ,[object Object],[object Object],[object Object]
coating (spin or dip) ,[object Object],[object Object],[object Object]
thermal spray ,[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object]
thermal spray ,[object Object],[object Object],[object Object],[object Object]
electrodeposition the deposition of a substance on an electrode by the action of electricity
electrodeposition Primarily a coating process for materials that can withstand liquids and can be electrically charged temperature and vacuum Minimum rate or thickness is highly controllable Can deposit complex chemistries Used extensively in semiconductor fabrication
Break
Basic Nanotechnology   Commercial Activity
Small Dreams? ,[object Object],[object Object],[object Object]
 
Labs - NNI funded
Labs - National Nanofabrication Users Network Cornell Nanofabrication Facility  Prof. Sandip Tiwari, Director  Cornell University, Knight Laboratory  Ithaca, New York 14853-5403  Voice: (607) 255-2329  Fax: (607) 255-8601  URL: http://www.cnf.cornell.edu/  Materials Science Center for Excellence  Prof. Gary Harris, Director  Howard University School of Engineering  2300 Sixth St, NW  Washington, D.C. 20059  Voice: (202) 806-6618  Fax: (202) 806-5367  URL: http://www.msrce.howard.edu/~nanonet/NNUN.HTM  PSU Nanofabrication Facility  Prof. Stephen Fonash, Director  189 Materials Research Institute  The Pennsylvania State University  University Park, PA 16802  Voice: (814) 865-4931  Fax: (814) 865-3018  URL: http://www.nanofab.psu.edu  Stanford Nanofabrication Facility  Dr. Yoshio Nishi, Director  Stanford University  CIS 103, Via Ortega St  Stanford, CA 94305  Voice: (650) 723-9508  Fax: (650) 725-0991  URL: http://www-snf.stanford.edu/  UCSB Nanofabrication Facility  Prof. Mark Rodwell, Director  University of California at Santa Barbara  Department of Electrical & Computer Engineering  5153 Engineering I  Santa Barbara, CA 93106  Voice: (805) 893-3244  Fax: (805) 893-3262  URL: http://www.nanotech.ucsb.edu/ Provides users with access to some of the most sophisticated nanofabrication technologies in the world with facilities open to all users from academia, government, and industry.
Lab Equipment ,[object Object],[object Object],[object Object],[object Object],[object Object],[object Object]
Semiconductor - Industry Elements ,[object Object],[object Object]
Semiconductor - Equipment Types ,[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],Diffusion/Oxidation/Annealing Dry Etch Dry-Clean Systems(gas-phase,etc) Electropolishing Epitaxy Furnaces Heat Exchangers In Situ Cleaners In Situ Monitors Ion Beam Ion Implantation laser Lithography, DUV/g/i-line Megasonic/Ultrasonic Systems Minienvironment,Automated/Manual Monitoring/Analysis Tools Non-CFC Cleaning Systems Organic Solvents Pellicles/Mounting Equipment Photomask Equipment/Materials Photoresist Processing Photoresist Stripping Physical Vapor Deposition Piping/Tubing,Stainless Steel/Other Plasma Cleaning Systems Post-CMP Cleaning Systems Power Supplies,Accessories pressure gages Pumps Quartzware Rapid Thermal Processors Recycling,Reprocessing Systems reticle Rinsers/Dryers Software(Operating,Simulatings,etc) Spin Processors Spray-Clean Systems Sputterers Sputtering Targets Steppers transducers UV Ozone Cleaning Systems Vacuum Components/Gages/Seals(O-rings,metal,etc.) Valves/Controllers Wafer Identification Wafer-Transport Systems Wet Etch Wet Process Stations
THE INTERNATIONAL TECHNOLOGY ROADMAP FOR SEMICONDUCTORS The International Technology Roadmap for Semiconductors (ITRS) is an assessment of the semiconductor technology requirements. The objective of the ITRS s to ensure advancements in the performance of integrated circuits. This assessment, called roadmapping, is a cooperative effort of the global industry manufacturers and suppliers, government organizations, consortia, and universities.  The ITRS identifies the technological challenges and needs facing the semiconductor industry over the next 15 years. It is sponsored by the Semiconductor Industry Association (SIA), the European Electronic Component Association (EECA), the Japan Electronics & Information Technology Industries Association (JEITA), the Korean Semiconductor Industry Association (KSIA), and Taiwan Semiconductor Industry Association (TSIA) .
Semiconductor - Focus - Metrology YEAR OF PRODUCTION 2002 2003 2004 2005 2006 2007 DRAM ½ PITCH (nm)  115  100   90   80   70   65 Problems Inline, nondestructive microscopy resolution (nm)  0.53  0.45  0.37  0.32  0.3  0.25 Materials and Contamination Characterization Real particle detection limit (nm) 53  45  37  32  30  25 Minimum particle size for compositional analysis (dense lines on patterned wafers) 35  30  24  21  20  17 Solution in hand Solution known Solution unknown
Semiconductor - Focus - Metrology YEAR OF PRODUCTION  2010  2013  2016 DRAM ½ PITCH (nm)    45    32    22 Problems Inline, nondestructive microscopy resolution (nm)  0.18  0.13  0.09 Materials and Contamination Characterization Real particle detection limit (nm)  18  13   9 Minimum particle size for compositional analysis (dense lines on patterned wafers) 12   9   6 Solution in hand Solution known Solution unknown
Semiconductor - Focus - Other ,[object Object],[object Object],[object Object],[object Object],[object Object]
Semiconductor - Leading Firms Rank   Company  2001 Semiconductor Sales   1  Intel  $23,850  2  Toshiba  $6,781  3  STMicroelectronics  $6,359  4  Texas Instruments  $6,100  5  Samsung  $5,814  6  NEC  $5,309  7  Hitachi  $5,037  8  Motorola  $4,828  9  Infineon  $4,558  10  Philips  $4,235  11  IBM  $3,898  12  AMD  $3,891  13  Mitsubishi    $3,473  14  Matsushita    $3,176  15  Fujitsu  $3,084  16  Agere Systems [Lucent] $3,051  17  Sanyo  $2,675  18  Hynix  $2,450  19  Micron  $2,411  20  Sony  $2,100  21  Analog Devices  $1,897  22  Sharp  $1,858  23  Agilent Technologies  $1,671  24  National Semiconductor $1,626  25  LSI Logic    $1,597
CNT - Fabrication CNT - Carbon NanoTube
CNT - Fabrication SWCNT - Single Wall Carbon NanoTube
CNT - Fabrication MWCNT - Multi-Wall Carbon Nanotube
CNT - Fabrication - how to A vacuum chamber is pumped down and back filled with some buffer gas, typically neon or Ar to 500 torr.   A graphite cathode and anode are placed in close proximity to each other.  The anode may be filled with metal catalyst particles if growth of single wall nanotubes is required.   A voltage is placed across the electrodes, (20 – 40 V).   The anode is vaporized while the cathode evaporates.   Carbon nanotubes form on the cathode in the sheath region. Carbon Arc or Arc Discharge
CNT - Fabrication - how to Laser Ablation or Pulsed Laser Vaporization (PLV) © American Scientist 1997 A laser is aimed at a block of graphite, vaporizing the graphite. Contact with a cooled cooper collector causes the carbon atoms to be deposited in the form of nanotubes. The nanotube "felt" can then be harvested
CNT - Fabrication - how to Chemical Vapor Deposition (CVD) Single-wall nanotubes are produced in a gas-phase process by catalytic disproportionation of CO on iron particles. Iron is in the form of iron pentacarbonyl.  Adding 25% hydrogen increases the SWNT yield. The synthesis is performed at 1100 C at atmospheric pressure. Multi-wall nanotubes are grown in the same apparatus where the catalytic metal particles are supported on a substrate (Si wafers or the quartz furnace tube). Iron is deposited from iron pentacarbonyl or by electron beam sputtering while nanotube growth is achieved by catalytic CVD from hydrocarbon molecules (acetylene, methane) or fullerenes at temperatures between 750 and 1100 C.
CNT - Fabrication - how to High-pressure CO conversion(HiPCO) ,[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object]
CNT - Sample Companies Metrotube  - Located at the Tokyo Metropolitan University, supplies single-walled carbon nanotubes for research and collaboration Applied Nanotechnologies  - ANI fabricates carbon nanotubes(CNTs) and produces carbon nanotube based devices such as x-ray tubes, microwave amplifiers, gas discharge tubes and field emission cathodes. Nanostructured and Amorphous Materials  - Manufacturer and supplier of nanoscale metal oxides, nitrides, carbides, diamond, Carbon nanotubes / Particles for research and industries Carbon Solutions Inc.  - Research, development and commercialization of single-walled carbon nanotubes, its chemistry and application to carbon based nanotechnology Carbon Nanotechnologies Inc.  - CNI intends to be a leader in carbon nanotechnology, beginning with its first product, Bucky(TM)tubes, which are single-wall carbon nanotubes made by the HiPco(TM) process. NanoLab Inc.  - Produces carbon nanotubes using the CVD growth process. The process produces arrays of aligned carbon nanotubes on substrates. CarboLex, Inc.  - Manufacturer of single-walled carbon nanotube fibers. Products are sold to composite manufacturers, display technology researchers, government researchers and universities.  Hyperion Catalysis International  - Producer of graphite nanotubes. Based in Cambridge, Massachusetts.  Skeleton Technologies Group  - Provides research and development of advanced materials and their applications, including nanotubes, shaped diamond composites, supercapacitors, and metal-ceramic composites.
CNT - Market Fundamentals Global market for nanotubes in 2002 was ~ $12 million About 20 producers of carbon nanotubes, half of which are in the United States. Other producers in Japan, Korea, China and France Global CNT production capacity is over 2.5 tons per day
Lab Equipment ,[object Object],[object Object]
Nano-positioning ,[object Object]
Nano-positioning ,[object Object],[object Object]
Nano-positioning ,[object Object],[object Object]
Nano-positioning ,[object Object],[object Object],The piezoelectric effect is: 1.  the production of a voltage when a crystal plate is subjected to mechanical pressure or when it is physically deformed by bending.  2. The physical deformation of the crystal plate (bending) when it is subjected to a voltage.
Nano-positioning ,[object Object],[object Object]
Nano-positioning ,[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object]
Nano-positioning ,[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object]
Lab Equipment – Microscopy ,[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object]
Microscope ,[object Object],[object Object],[object Object],[object Object],[object Object]
Microscopy Market ,[object Object],[object Object],[object Object],[object Object]
Lab Equipment ,[object Object],[object Object],[object Object],[object Object]
Software – Molecular Modeling ,[object Object],[object Object],[object Object],[object Object]
Software - Atoms
Software - Atoms
Software - Atoms
Software - Molecules
Software - Market ,[object Object],[object Object],[object Object],[object Object]
End of Part 2

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Introduction to Nanotechnology: Part 2

  • 1. Basic Nanotechnology What’s the Technology Landscape?
  • 2. State of basic research
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  • 26. Break
  • 27. Basic Nanotechnology Primer on manufacturing processes
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  • 36. Lithography Resolution to 65 nm (10 nm with x-rays) Vacuum environment Multiple layer writing Current standard for semiconductor industry
  • 39.
  • 40. soft lithography & nanoscale printing
  • 41. soft lithography & nanoscale printing Resolution 100 nm Liquid environment Multiple layer writing Wide areas & rapid production rates A stamp was molded off the master and used for printing alkanethiols onto a gold layer, followed by a selective etch to develop the pattern. IBM Zurich
  • 42. e-beam and deep UV lithography
  • 43. e-beam and deep UV lithography Resolution 20 nm Vacuum environment Slow writing speed Multiple beam technologies in development Direct write & direct exposure
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  • 50. combustion Combustion wire process Combustion powder process Burning a material such that the products of its combustion condense on a cooler surface.
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  • 62. electrodeposition the deposition of a substance on an electrode by the action of electricity
  • 63. electrodeposition Primarily a coating process for materials that can withstand liquids and can be electrically charged temperature and vacuum Minimum rate or thickness is highly controllable Can deposit complex chemistries Used extensively in semiconductor fabrication
  • 64. Break
  • 65. Basic Nanotechnology Commercial Activity
  • 66.
  • 67.  
  • 68. Labs - NNI funded
  • 69. Labs - National Nanofabrication Users Network Cornell Nanofabrication Facility Prof. Sandip Tiwari, Director Cornell University, Knight Laboratory Ithaca, New York 14853-5403 Voice: (607) 255-2329 Fax: (607) 255-8601 URL: http://www.cnf.cornell.edu/ Materials Science Center for Excellence Prof. Gary Harris, Director Howard University School of Engineering 2300 Sixth St, NW Washington, D.C. 20059 Voice: (202) 806-6618 Fax: (202) 806-5367 URL: http://www.msrce.howard.edu/~nanonet/NNUN.HTM PSU Nanofabrication Facility Prof. Stephen Fonash, Director 189 Materials Research Institute The Pennsylvania State University University Park, PA 16802 Voice: (814) 865-4931 Fax: (814) 865-3018 URL: http://www.nanofab.psu.edu Stanford Nanofabrication Facility Dr. Yoshio Nishi, Director Stanford University CIS 103, Via Ortega St Stanford, CA 94305 Voice: (650) 723-9508 Fax: (650) 725-0991 URL: http://www-snf.stanford.edu/ UCSB Nanofabrication Facility Prof. Mark Rodwell, Director University of California at Santa Barbara Department of Electrical & Computer Engineering 5153 Engineering I Santa Barbara, CA 93106 Voice: (805) 893-3244 Fax: (805) 893-3262 URL: http://www.nanotech.ucsb.edu/ Provides users with access to some of the most sophisticated nanofabrication technologies in the world with facilities open to all users from academia, government, and industry.
  • 70.
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  • 73. THE INTERNATIONAL TECHNOLOGY ROADMAP FOR SEMICONDUCTORS The International Technology Roadmap for Semiconductors (ITRS) is an assessment of the semiconductor technology requirements. The objective of the ITRS s to ensure advancements in the performance of integrated circuits. This assessment, called roadmapping, is a cooperative effort of the global industry manufacturers and suppliers, government organizations, consortia, and universities. The ITRS identifies the technological challenges and needs facing the semiconductor industry over the next 15 years. It is sponsored by the Semiconductor Industry Association (SIA), the European Electronic Component Association (EECA), the Japan Electronics & Information Technology Industries Association (JEITA), the Korean Semiconductor Industry Association (KSIA), and Taiwan Semiconductor Industry Association (TSIA) .
  • 74. Semiconductor - Focus - Metrology YEAR OF PRODUCTION 2002 2003 2004 2005 2006 2007 DRAM ½ PITCH (nm) 115 100 90 80 70 65 Problems Inline, nondestructive microscopy resolution (nm) 0.53 0.45 0.37 0.32 0.3 0.25 Materials and Contamination Characterization Real particle detection limit (nm) 53 45 37 32 30 25 Minimum particle size for compositional analysis (dense lines on patterned wafers) 35 30 24 21 20 17 Solution in hand Solution known Solution unknown
  • 75. Semiconductor - Focus - Metrology YEAR OF PRODUCTION 2010 2013 2016 DRAM ½ PITCH (nm) 45 32 22 Problems Inline, nondestructive microscopy resolution (nm) 0.18 0.13 0.09 Materials and Contamination Characterization Real particle detection limit (nm) 18 13 9 Minimum particle size for compositional analysis (dense lines on patterned wafers) 12 9 6 Solution in hand Solution known Solution unknown
  • 76.
  • 77. Semiconductor - Leading Firms Rank Company 2001 Semiconductor Sales 1 Intel $23,850 2 Toshiba $6,781 3 STMicroelectronics $6,359 4 Texas Instruments $6,100 5 Samsung $5,814 6 NEC $5,309 7 Hitachi $5,037 8 Motorola $4,828 9 Infineon $4,558 10 Philips $4,235 11 IBM $3,898 12 AMD $3,891 13 Mitsubishi $3,473 14 Matsushita $3,176 15 Fujitsu $3,084 16 Agere Systems [Lucent] $3,051 17 Sanyo $2,675 18 Hynix $2,450 19 Micron $2,411 20 Sony $2,100 21 Analog Devices $1,897 22 Sharp $1,858 23 Agilent Technologies $1,671 24 National Semiconductor $1,626 25 LSI Logic $1,597
  • 78. CNT - Fabrication CNT - Carbon NanoTube
  • 79. CNT - Fabrication SWCNT - Single Wall Carbon NanoTube
  • 80. CNT - Fabrication MWCNT - Multi-Wall Carbon Nanotube
  • 81. CNT - Fabrication - how to A vacuum chamber is pumped down and back filled with some buffer gas, typically neon or Ar to 500 torr.   A graphite cathode and anode are placed in close proximity to each other.  The anode may be filled with metal catalyst particles if growth of single wall nanotubes is required.   A voltage is placed across the electrodes, (20 – 40 V).   The anode is vaporized while the cathode evaporates.   Carbon nanotubes form on the cathode in the sheath region. Carbon Arc or Arc Discharge
  • 82. CNT - Fabrication - how to Laser Ablation or Pulsed Laser Vaporization (PLV) © American Scientist 1997 A laser is aimed at a block of graphite, vaporizing the graphite. Contact with a cooled cooper collector causes the carbon atoms to be deposited in the form of nanotubes. The nanotube "felt" can then be harvested
  • 83. CNT - Fabrication - how to Chemical Vapor Deposition (CVD) Single-wall nanotubes are produced in a gas-phase process by catalytic disproportionation of CO on iron particles. Iron is in the form of iron pentacarbonyl. Adding 25% hydrogen increases the SWNT yield. The synthesis is performed at 1100 C at atmospheric pressure. Multi-wall nanotubes are grown in the same apparatus where the catalytic metal particles are supported on a substrate (Si wafers or the quartz furnace tube). Iron is deposited from iron pentacarbonyl or by electron beam sputtering while nanotube growth is achieved by catalytic CVD from hydrocarbon molecules (acetylene, methane) or fullerenes at temperatures between 750 and 1100 C.
  • 84.
  • 85. CNT - Sample Companies Metrotube  - Located at the Tokyo Metropolitan University, supplies single-walled carbon nanotubes for research and collaboration Applied Nanotechnologies  - ANI fabricates carbon nanotubes(CNTs) and produces carbon nanotube based devices such as x-ray tubes, microwave amplifiers, gas discharge tubes and field emission cathodes. Nanostructured and Amorphous Materials  - Manufacturer and supplier of nanoscale metal oxides, nitrides, carbides, diamond, Carbon nanotubes / Particles for research and industries Carbon Solutions Inc.  - Research, development and commercialization of single-walled carbon nanotubes, its chemistry and application to carbon based nanotechnology Carbon Nanotechnologies Inc.  - CNI intends to be a leader in carbon nanotechnology, beginning with its first product, Bucky(TM)tubes, which are single-wall carbon nanotubes made by the HiPco(TM) process. NanoLab Inc.  - Produces carbon nanotubes using the CVD growth process. The process produces arrays of aligned carbon nanotubes on substrates. CarboLex, Inc. - Manufacturer of single-walled carbon nanotube fibers. Products are sold to composite manufacturers, display technology researchers, government researchers and universities. Hyperion Catalysis International - Producer of graphite nanotubes. Based in Cambridge, Massachusetts. Skeleton Technologies Group - Provides research and development of advanced materials and their applications, including nanotubes, shaped diamond composites, supercapacitors, and metal-ceramic composites.
  • 86. CNT - Market Fundamentals Global market for nanotubes in 2002 was ~ $12 million About 20 producers of carbon nanotubes, half of which are in the United States. Other producers in Japan, Korea, China and France Global CNT production capacity is over 2.5 tons per day
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