Newsletter Research Activities of Semiconductor Companies November 2009
1. KnowMade
Newsletter
Research Activities of
Semiconductor Companies
November 2009
2. Information
This monthly newsletter
brings to you an insight into
the research activities of
semiconductor private
CONTENTS
companies.
Cree............................................................................................................................................................... 3
Free subscription here High-mobility enhancement-mode 4H-SiC lateral field-effect transistors utilizing
atomic layer deposited Al2O3 gate dielectric ................................................................. 3
Custom newsletter
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custom newsletter according Design and technology considerations for SiC bipolar devices: BJTs, IGBTs, and
to your own needs: patents, GTOs........................................................................................................................................... 3
scientific activities, calls for
projects, events, etc. Fujitsu .......................................................................................................................................................... 3
GaAsSb-based backward diodes for highly sensitive millimetre -wave detectors . 3
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Freescale Semiconductor ..................................................................................................................... 4
Arsenic defect complexes at SiO/Si interfaces: A density funct ional theory study4
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Infineon Technologies ........................................................................................................................... 4
intelligence private company Comparison of 24 GHz receiver front-ends using active and passive mixers in
providing technology watch CMOS .......................................................................................................................................... 4
services for R&D projects in
innovative technological Kyma Technologies ................................................................................................................................ 4
sectors:
-semiconductor materials On carrier spillover in c- and m-plane InGaN light emitting diodes ......................... 4
-micro & nanotechnology
-biotechnology OSRAM Opto Semiconductors ............................................................................................................. 5
-pharmacology Leakage current and reverse-bias luminescence in InGaN-based light-emitting
-environment diodes ........................................................................................................................................ 5
etc.
Our mission is to provide you Sumitomo Electric Industries ............................................................................................................. 5
high added value informations Electrostatic-discharge-induced degradation of 1.3 µm AlGaInAs/InP buried
in order to improve your heterostructure laser diodes ............................................................................................... 5
innovation process. A PhD
team, specializing in your
technological field, identifies, Alcatel-Thales, III-V LaB........................................................................................................................ 5
collects and analyzes in the InP DHBT selector-driver with 2×2.7 V swing for 100 Gbit/s operation ................ 5
best sources (patents,
scientific publications, Taiwan Semiconductor Manufacturing Company ....................................................................... 6
legislation, web, etc) the most
Ge Epitaxial Growth on GaAs Substrates for Application to Ge -Source/Drain GaAs
relevant informations for your
projects. MOSFETs ................................................................................................................................... 6
KnowMade cover a wide Renesas Technology ............................................................................................................................... 6
range of technology watch Analysis of Snapback Phenomena in VDMOS Transistor having the High Second
services: newsletter, web- Breakdown Current: A High ESD Mechanism Analysis ................................................. 6
based collaborative platform,
technology analysis, state of
the art, patent classification, Rohm ............................................................................................................................................................ 6
scientific portfolio analysis, Development of SiC diodes, power MOSFETs and intelligent power modules ....... 6
identification of experts,
competitors and partners,
technology trends, etc.
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Novembre 2009 | www.knowmade.fr
3. CREE
High-mobility enhancement-mode 4H-SiC lateral field-effect transistors utilizing atomic
layer deposited Al2O3 gate dielectric
Abstract : Lateral metal-oxide-semiconductor field-effect transistors (MOSFETs) have been fabricated on 4H-SiC
utilizing deposited dielectrics and gate-last processing. The bilayer dielectric consists of thin nitrided SiO2 covered by
25 nm of Al2O3 deposited using atomic layer deposition. Field-effect mobility and threshold voltage (VT) vary with SiC
nitric oxide (NO) anneal temperature. Peak mobility of 106 cm2/V·s was obtained with corresponding VT of 0.8 V. The
peak mobility decreases to 61 cm2/V·s with a lower temperature NO anneal, while the VT increased to 1.4 V. Thus with
proper gate engineering, high-mobility normally off MOSFET devices can be obtained, leading to higher-performance
gate-controlled power devices.
Read more …
Source : Applied Physics Letters
Design and technology considerations for SiC bipolar devices: BJTs, IGBTs, and GTOs
Abstract : There has been a rapid improvement in SiC materials and power devices during the last few years. SiC
unipolar devices such as Schottky diodes, JFETs and MOSFETs have been developed extensively and advantages of
insertion of such devices in power electronic systems have been demonstrated [1, 2]. However, unipolar devices for
high voltage systems suffer from high drift layer resistance that gives rise to high power dissipation in the on-state. For
such applications, bipolar devices are preferred due to their low on-resistance. In this article, the physics and
technology of SiC bipolar devices, namely Bipolar Junction Transistors (BJTs), Insulated Gate Bipolar Transistors
(IGBTs), and Gate Turn Off Thyristors (GTOs), are discussed. A detailed review of the current status and future trends in
these devices is given with an emphasis on the device design and characterization.
Read more …
Source : Physica Status Solidi (a)
FUJITSU
GaAsSb-based backward diodes for highly sensitive millimetre -wave detectors
Abstract : Highly sensitive millimetre-wave detectors based on p-GaAs0.51Sb0.49/i-In0.52Al0.48As/n-InxGa1-xAs backward
diodes under zero-bias operation were developed on an InP substrate. Voltage sensitivity of 12300 V/W at 94 GHz was
achieved with the GaAsSb-based diode which has a circular mesa with a diameter of 0.9 µm. To improve the sensitivity,
the indium composition of the n-InxGa1-xAs layer and thickness of the i-In0.52Al0.48As layer were optimised. Furthermore,
a self-aligned process was performed to minimise parasitic resistance at an ohmic contact layer. These GaAsSb-based
diodes that are lattice-matched to InP are promising for easy integration with high-performance InP low-noise
amplifiers.
Read more …
Source : Electronics Letters
Novembre 2009 | www.knowmade.fr
4. FREESCALE SEMICONDUCTOR
Arsenic defect complexes at SiO/Si interfaces: A density functional theory study
Abstract : The behavior of arsenic defect complexes at amorphous SiO2/Si(110) interfaces has been studied using
density-functional theory calculation. We find that arsenic defect complexes that are stable in bulk Si show moderate
energy gain in SiO2/Si interface region due to the interface-induced strain effect. We have identified three arsenic defect
complex configurations, Asit, As2I2I, and As2I2II, which exist only at SiO2/Si interface. These interface arsenic defect
complexes are highly stabilized due to their unique bonding configurations at SiO2/Si interface. Therefore, they could
contribute to arsenic segregation as both initial stage precursor and dopant trapping sites. Our calculation indicates
that arsenic atoms trapped in such interface complexes are electrically inactive. Finally, the formation and evolution
dynamics of interface arsenic defect complexes are discussed.
Read more …
Source : Physical Review B
INFINEON TECHNOLOGIES
Comparison of 24 GHz receiver front-ends using active and passive mixers in CMOS
Abstract : This study compares the key parameters of two integrated receiver front-end architectures: low noise
amplifier (LNA) with active mixer against LNA with passive mixer. The authors discuss the differences in the
performance and their impact on system characteristics for radar applications. A low-IF down-conversion receiver
implementation is considered. The results are compared in measurement for two 24 GHz receiver front-end chips
realised in a 0.13 µm digital CMOS process. Both circuits have been characterised over automotive temperature range
−40 to 125°C. The front-end with an active mixer offers lower LO power dependence and exhibits better temperature
stability, whereas the front-end with a passive mixer has the advantage of better input-referred linearity and lower
flicker noise.
Read more …
Source : IET Circuits Devices & Systems
KYMA TECHNOLOGIES
On carrier spillover in c- and m-plane InGaN light emitting diodes
Abstract : The internal quantum efficiency (IQE) and relative external quantum efficiency (EQE) in InGaN light-emitting
diodes (LEDs) emitting at 400 nm with and without electron blocking layers (EBLs) on c-plane GaN and m-plane GaN
were investigated in order to shed some light on any effect of polarization charge induced field on efficiency killer
carrier spillover. Without an EBL the EQE values suffered considerably (by 80%) for both orientations, which is clearly
attributable to carrier spillover. Substantial carrier spillover in both polarities, therefore, suggests that the polarization
charge is not the major factor in efficiency degradation observed, particularly at high injection levels. Furthermore, the
m-plane variety with EBL did not show any discernable efficiency degradation up to a maximum current density of
2250 A cm−2 employed while that on c-plane showed a reduction by ~40%. In addition, IQE of m-plane LED structure
determined from excitation power dependent photoluminescence was ~80% compared to 50% in c-plane LEDs under
resonant and moderate excitation condition. This too is indicative of the superiority of m-plane LED structures, most
probably due to relatively larger optical matrix elements for m-plane orientation.
Read more …
Source : Applied Physics Letters
Novembre 2009 | www.knowmade.fr
5. OSRAM OPTO SEMICONDUCTORS
Leakage current and reverse-bias luminescence in InGaN-based light-emitting diodes
Abstract : This paper reports an electro-optical analysis of the correlation between reverse-bias leakage current and
luminescence in light-emitting diodes based on InGaN. The results of the analysis suggest that (i) the main mechanism
responsible for leakage current conduction is tunneling, (ii) leakage current is correlated with the presence of reverse-
bias luminescence, (iii) leakage current flows through preferential paths, that can be identified by means of emission
microscopy, and (iv) reverse-bias luminescence could be ascribed to the recombination of electron-hole pairs in the
quantum well region.
Read more …
Source : Applied Physics Letters
SUMITOMO ELECTRIC INDUSTRIES
Electrostatic-discharge-induced degradation of 1.3 µm AlGaInAs/InP buried
heterostructure laser diodes
Abstract : Degradation of 1.3 µm AlGaInAs buried heterostructure laser diodes due to electrostatic discharge (ESD) is
studied. The degradation mechanism of this material has not previously been clear and so the ESD tolerance was
evaluated. Degradation occurred at 0.5 and 2.5 kV for forward and reverse polarities, respectively. Because that ESD
tolerance for forward polarity is insufficient for practical applications, we focused on it in analyzing the degradation
mechanism. Elliptically shaped melted regions are observed in the active layer of the facet. Such regions developed
inside a cavity under the application of ESD pulses. These results indicate that degradation is caused by melting due to
optical absorption.
Read more …
Source : Journal of Applied Physics
ALCATEL-THALES, III-V LAB
InP DHBT selector-driver with 2×2.7 V swing for 100 Gbit/s operation
Abstract : An integrated selector-driver is designed for 100 Gbit/s operation and fabricated using 0.7 µm InP double-
heterojunction bipolar transistor (DHBT) technology. The driver has a lumped architecture and operates in differential
mode. Two complementary signals each with 2.7 V amplitude (3.2 Vpp) have been measured at 100 Gbit/s.
Read more …
Source : Electronics Letters
Novembre 2009 | www.knowmade.fr
6. TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY
Ge Epitaxial Growth on GaAs Substrates for Application to Ge -Source/Drain GaAs MOSFETs
Abstract : Ge films were epitaxially grown on GaAs(100) substrates and Ga 0.88In0.12As(100) virtual substrates using an
ultrahigh vacuum/chemical vapor deposition system. The incubation time of Ge growth depends on Ga(In)As surfaces
that were processed by different wet chemical solutions. Growth behaviors, such as island growth at the initial stages
and selective growth into recessed regions of GaAs, were studied by transmission electron microscopy. To test the
quality of Ge grown on GaAs, an n+-Ge/p-GaAs diode was fabricated. We propose that through Ge selective epitaxial
growth, Ge can be used as the source–drain of a GaAs metal-oxide-semiconductor field-effect transistor (MOSFET) to
overcome some intrinsic limitations of this device.
Read more …
Source : Journal of Electrochemical Society
RENESAS TECHNOLOGY
Analysis of Snapback Phenomena in VDMOS Transistor having the High Second Breakdown
Current: A High ESD Mechanism Analysis
Abstract : We proposed the balanced vertical double - diffused MOS (B-VDMOS) transistor. The B-VDMOS transistor is
not destroyed by avalanche breakdown and acquires the high second breakdown current. Owing to the high second
breakdown current, the B-VDMOS transistor has high electrostatic discharge (ESD) robustness. This paper presents the
mechanism of the snapback phenomena and clarifies the cause that the B-VDMOS transistor has the high second
breakdown current. We find the cause that current does not become concentrated even after avalanche breakdown in
the B-VDMOS transistor.
Read more …
Source : IEEJ Transactions on Electrical and Electronic Engineering
ROHM
Development of SiC diodes, power MOSFETs and intelligent power modules
Abstract : Silicon carbide (SiC) power devices have been expected as next-generation power-saving devices. We
succeeded in fabricating very large area (1 cm2) SiC Schottky barrier diodes (SBDs) with forward current of 300 A by
inactivating areas including crystal defects. Heterojunction diodes with avalanche energy of over 2000 mJ/cm 2 were
also developed. The reliability of gate oxide films of SiC DMOSFETs was enhanced to a level that is comparable to silicon
power devices by improving oxidation techniques. We succeeded in fabricating SiC trench MOSFETs with low on-
resistance (1.7 m cm2). 250 °C operation of intelligent power modules (IPMs) with SiC DMOSFETs was achieved by
using a new attachment technology.
Read more …
Source : Physica Status Solidi (a)
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