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Epitaxial Growth (Campbell, Chapter 14) ,[object Object],[object Object],[object Object]

Structural defects in epitaxial growth ,[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object]

Stacking faults in silicon formation of a stacking fault detail of a stacking fault ,[object Object],[object Object],a b c c a b a c b a c a b c a b c a

Lattice-mismatched growth ,[object Object],[object Object]

Misfit dislocations in GaAs/Si

Antiphase disorder ,[object Object],[object Object],antiphase domain

Thermodynamics of epitaxial growth ,[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object]

Thermodynamics of epitaxial growth (2) ,[object Object],[object Object],[object Object],[object Object],[object Object]

Kinetics of epitaxial growth ,[object Object],[object Object],[object Object],[object Object],[object Object],growth rate  F 2  c s  h g is the gas-phase mass transfer coefficient k s is the surface reaction rate coefficient

Kinetics of epitaxial growth (2) ,[object Object],number density of atoms (Si: 5  10 22 cm -3 ) R [=] cm sec -1 ( i.e. a growth velocity or growth rate ); R is obviously sensitive to h g , k s and c g Temperature dependence of growth growth rates of silicon from various chlorosilanes lower right: surface reaction limited upper left : mass transfer limited

[object Object],[object Object],[object Object],[object Object],[object Object],Kinetics of epitaxial growth (3)  0 1  P low P --   P high P --  1 note: and the growth rate =  k s

Vapor phase epitaxy -- silicon ,[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object]

Dopant incorporation in Si epitaxy ,[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],all are gases at room temperature

Ultra-high vacuum chemical vapor deposition (UHV-CVD) ,[object Object],[object Object],UHV-CVD can produce high quality epitaxial films at low temperatures (down to 450°C!!) ,[object Object],[object Object],[object Object]

33 Epi2 00

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33 Epi2 00