SPIE Advanced Lithography: "Lithographic Process Window Optimization for Mask Aligner Proximity Lithography"
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The document discusses optimization of the lithographic process window for mask aligners used in proximity lithography. It introduces a new illumination system called MO Exposure Optics that provides better light uniformity and customizable illumination. Simulation software is used to model the full 3D resist development and visualize the process window. Process window optimization finds the robust process parameters and improves yield. The document examines how factors like the critical dimension, sidelobe printing, sidewall angle, and proximity gap impact the process window. It concludes the new illumination system and simulation tools help optimize lithography and find robust processes for mask aligners.
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SPIE Advanced Lithography: "Lithographic Process Window Optimization for Mask Aligner Proximity Lithography"
- 1. LITHOGRAPHIC PROCESS WINDOW OPTIMIZATION FOR MASK ALIGNER PROXIMITY LITHOGRAPHY Reinhard Voelkela, Uwe Voglera, Arianna Bramatia, Andreas Erdmannb, Nezih Ünalc, Ulrich Hofmannc, Marc Hennemeyerd, Ralph Zoberbierd, David Nguyene, Juergen Bruggere a) SUSS MicroOptics SA, Rouges-Terres 61, CH-2068 Hauterive, Switzerland, voelkel@suss.ch, www.suss.ch b) Fraunhofer Institut IISB, Schottkystr. 10, D-91058 Erlangen, Germany c) GenISys GmbH, Eschenstr. 66, D-82024 Taufkirchen, Germany d) SÜSS MicroTec Lithography GmbH, Schleissheimerstrasse 90, D-85748 Garching, Germany e) École Polytechnique Fédérale de Lausanne, EPFL STI IMT, CH-1015 Lausanne, Switzerland
- 2. MASK ALIGNER LITHOGRAPHY EVOLUTION New illumination system: MO Exposure Optics® better light uniformity & telecentric illumination customized illumination LAB: lithography simulation full 3D resist development photomask gap half-pitch height Process window optimization visualize and optimize mask aligner lithography find robust process improve yield resist pit 80% resist Θ sidewall angle wafer 2 SUSS MicroOptics, Reinhard Völkel, SPIE Advanced Lithography 2014, 9052-15 20% CD 200nm
- 3. MASK ALIGNER LITHOGRAPHY 1963 - 2014 Proximity lithography – shadow printing Resolution of 3 – 5 m (half-pitch) for 30 – 50 m proximity gap Resolution proximity gap Mask Wafer 3 SUSS MicroTec, LAB – 3D Workshop, April 24, 2013
- 4. DIFFRACTION RULES PROXIMITY LITHOGRAPHY Side lobes Off-Axis Apodization 4 SUSS MicroOptics, Reinhard Völkel, SPIE Advanced Lithography 2014, 9052-15
- 5. MO EXPOSURE OPTICS: CUSTOMIZED ILLUMINATION 5 SUSS MicroOptics, Reinhard Völkel, SPIE Advanced Lithography 2014, 9052-15
- 6. LITHOGRAPHIC PROCESS WINDOW FOR MASK ALIGNER 6 SUSS MicroOptics, Reinhard Völkel, SPIE Advanced Lithography 2014, 9052-15
- 7. CD UNIFORMITY photomask height gap half-pitch resist pit 80% resist Θ 20% CD sidewall angle wafer AZ® 1512 photoresist, 1m thick Simulation in LAB software from GenISys GmbH Resist prints in SUSS MA6 MOEO Data analysis in Matlab 7 SUSS MicroOptics, Reinhard Völkel, SPIE Advanced Lithography 2014, 9052-15 200nm
- 8. LINES & SPACES 5 MICRON (HALF-PITCH) SUSS LGO Optics (±1.4°) (proximity lithography settings) 8 SUSS MicroOptics, Reinhard Völkel, SPIE Advanced Lithography 2014, 9052-15
- 9. PROCESS WINDOW (CD) B A C photomask height gap half-pitch resist pit 80% resist Θ sidewall angle wafer 9 SUSS MicroOptics, Reinhard Völkel, SPIE Advanced Lithography 2014, 9052-15 20% CD 200nm
- 10. PROCESS WINDOW (SIDE LOBE PRINTING) photomask height gap half-pitch resist pit 80% resist Θ sidewall angle wafer 10 SUSS MicroOptics, Reinhard Völkel, SPIE Advanced Lithography 2014, 9052-15 20% CD 200nm
- 11. PROCESS WINDOW (SIDEWALL ANGLE) AZ® 1512 photoresist, 1m thick photomask height gap half-pitch resist pit 80% resist Θ sidewall angle wafer 11 SUSS MicroOptics, Reinhard Völkel, SPIE Advanced Lithography 2014, 9052-15 20% CD 200nm
- 12. PROCESS WINDOW photomask height gap half-pitch resist pit 80% resist Θ sidewall angle wafer 12 SUSS MicroOptics, Reinhard Völkel, SPIE Advanced Lithography 2014, 9052-15 20% CD 200nm
- 13. DEATH VALLEY OF PROXIMITY LITHOGRAPHY Resolution = Proximity Gap 13 SUSS MicroOptics, Reinhard Völkel, SPIE Advanced Lithography 2014, 9052-15
- 14. Parallel Illumination OUTLOOK 4µm L&S 5µm L&S 7µm L&S 10µm L&S PW for LGO LGO 3µm L&S ≈ 10 µm ≈ 20 µm ≈ 30 µm ≈ 55 µm >100 µm 𝐶𝐷2 𝐶𝑟𝑖𝑡𝑖𝑐𝑎𝑙 𝐺𝑎𝑝 ≅ 0.44 λ Broad band illumination 14
- 15. CONCLUSION New illumination system: MO Exposure Optics® better light uniformity & telecentric illumination customized illumination LAB: lithography & full 3D resist simulation Process window optimization visualize and optimize mask aligner lithography find robust process, improve yield 15 SUSS MicroOptics, Reinhard Völkel, SPIE Advanced Lithography 2014, 9052-15
- 16. JOIN OUR WORKSHOP ON THURSDAY MORNING 16 SUSS MicroOptics, Reinhard Völkel, SPIE Advanced Lithography 2014, 9052-15
- 17. SUSS. Our Solutions Set Standards SUSS MicroOptics SA Rouges-Terres 61 CH-2068 Hauterive Switzerland Tel +41-32-564444 Fax +41-32-5664499 info@suss.ch, www.suss.ch 17 SUSS MicroOptics, Reinhard Völkel, SPIE Advanced Lithography 2014, 9052-15