This presentation summarizes the design of a wideband low noise amplifier (LNA) using pseudomorphic high electron mobility transistors (HEMTs). The objectives were to design an LNA with a minimum noise figure and high gain over a desired frequency band. The design process involved: 1) Biasing network design; 2) Designing an ideal LNA model; 3) Designing a real LNA model including input/output matching; 4) Simulation. The results showed a minimum noise figure of 0.7 dB and gain of 14 dB at 2.46 GHz, meeting the objectives. Previous LNA designs are also summarized for comparison.

1. A
PRESENTATION
ON
“A Wideband Low Noise Amplifier Using
Pseudomorphic High Electron Mobility Transistor.”
By : Suman Sharma
Roll No: 069/MSI/619
1

2. Introduction
Low Noise Amplifier.
Radio Frequency.
Noise Figure.
Gain.
Stability.
2

3. Objectives
Design a low noise amplifier with a minimum
noise figure and high gain for a desired
frequency band.
3

4. Block Diagram Of LNA
From
Antenna
Input
Matching
Network
Gain
Output
Matching
Network
To
Subsequent
Stages
Figure: Functional Block Diagram of LNA
4

5. Application Of LNA
From Satellite
Down-Convertor
BPF
Low Noise
Amplifier
(LNA)
RF
IF
Mixer
BPF
Demodulator
Baseband
Out
RF
Microwave
Generator
Figure: Low Noise Amplifier application

Reference: A book in “Satellite Communication” by Dharma Raj Cheruku
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6. Methodology
Design of biasing networks (DC Biasing).
Designing LNA with ideal component.
Designing LNA with real component.
Input and Output Matching Network.
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7. Simulation Results:
Figure: DC tracing with FET Biasing and its curve versus bias.
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8. Designing LNA with ideal component
Figure: LNA with ideal component, input and output reflection coefficient with
Stability and Gain measurement.
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9. Designing LNA with real component
Figure: Low Noise Amplifier with real component
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10. Comparison when L= 1 and 0.3 nH
Figure: Stability and Gain when L=1 nH and 0.3 nH respectively
10

11. Input and Output Matching Network
Figure: Input and Output Matching Network
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12. Overall Block of Low Noise Amplifier
Figure: LNA with input and output matching network
12

13. Noise and Gain Circle
Figure: Noise and Gain Circle
13

14. Stability of LNA
Figure: Stability measurement in entire range of LNA
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15. Noise Figure
Figure: Noise Figure
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16. Gain
Figure: showing maximum and minimum gain
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17. Return Loss
Figure: Input and Output Return Loss
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18. Figure: Stability Region for 2 GHz frequency
18

19. Review of Previous Result
Author
Year
Noise Figure(dB)
Gain(dB)
Power (mW)
Frequency (GHz)
Rofougaran Et Al[3]
1996
3.5
22
27
0.9
K.S. and Thomas[3]
1997
3.5
22
30
1.5
F.B. Eric A.M kim[4]
2004
Above 3
13.5
below 25
1.6
J.B. Seo. J H Kim[5]
2008
14
1.8
3.1-10.6
K.E. Art nd AH[7]
2009
3.6-4.9
10
21
over 16
E.A. Sobhy[2]
2011
1.85-2
23
2.8
1.77
Table: Previous Result of LNA parameters
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20. Conclusion
There were three main goals:
 Obtaining the correct S-parameters of the Agilent ATF54143 pHEMT over a wide frequency range.
 Calculating the noise parameters of ATF-54143 at 1 GHz
to 3 GHz.
 Improving the LNA design for better noise performance
and high gain.
 Minimum Noise Figure is 0.7 dB and gain is 14 dB at 2.46
GHz frequency.
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21. References
1.
M. E. Nozahi, A. A. Helmy, E. S. Sinencio, and K. Entesari, “An inductor-less noise-cancelling broadband low noise amplifier with
composite transistor pair in 90 nm CMOS technology,” IEEE, May 2011.
2.
E. A. Sobhy, A. A. Helmy, K. Entesari, and E. S. Sinencio, “A 2.8-mW Sub-2-dB Noise Figure Inductorless Wideband CMOS LNA
Employing Multiple Feedback,” IEEE , August 2011.
3.
D. K. Shaeffer, and Thomas,” A 1.5-V, 1.5-GHz CMOS low noise amplifier,” IEEE, May 1997.
4.
F. Bruccoleri, E. A. Klumperink, and B. Nauta,”Wide-band CMOS low noise amplifier exploiting thermal noise canceling,” IEEE,
February 2004.
5.
J. B. Seo, J. H. Kim, H. Sun, and T. Y. Yun, “A Low-Power and Hign-Gain Mixer for UWB Systems,” IEEE, December 2008.
6.
C. M. Lin, H. K. Lin, Y. A. Lai, C. P. Chang, and Y. H. Wang, “ A 10-40 GHz Broadband Subharmonic Monolithic Mixer in 0.18 µm
CMOS Technology,” IEEE, February 2009.
7.
K. Entesari, A. R. Tavakoli, and A. A. Helmy, “CMOS Distributed Amplifier with Extended Flat Bandwidth and Improved Input
Matching Using Gate Line with Coupled Inductors,” IEEE, December 2009.
8.
M. Lashsaini, L. Zenhouar, and S. Bri, “Design of Broadband Low Noise Amplifier Based on HEMT Transistor in the X-Band,” IJET,
Feb-Mar 2013.
9.
S. E. Shin, W. R. Deal, D. M. Yamauchi, W. E. Sutton, W. B. Luo, Y. Chen, L. P. Smorchkova, B. Heying, M. Wojtowicz, and M.
Siddiqui, “Design and Analysis of Ultra Wideband GaN Dual-Gate HEMT Low-Noise Amplifiers,” IEEE, December 2009.
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22. Thank You.
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