publications

1. 1
RECENT PUBLICATIONS - after 2000
Alexander Y. Usenko
Refereed Journal and Proceedings Papers
1. Z.Jost, A.Jones, C.Lottes, I.Peidous, M.Ries, A.Usenko Comparison of Spot
and Wide Beam Implanters for Making SOI Wafers by Layer Transfer
Proceedings of Ion Implantation Technology International Conference
pp.146-148 presented at 20th IIT, June 26-July 4 2014 Portland, OR.
2. A. Usenko, Humidity Effects on Substrate Bonding for Silicon-on-Glass,
ECS Transactions Advanced Semiconductor-on-Insulator Technology and
Related Physics Volume 34, (2011) presented at 219th Meeting of
Electrochemical Society, Montreal, Canada, May 1-6, 2011.
3. A. Usenko, J. Senawiratne, Single Crystal Silicon Thin Film on Polymer
Substrate by Double Layer Transfer Method, ECS Transactions Advanced
Semiconductor-on-Insulator Technology and Related Physics Volume 34,
(2011) presented at 219th Meeting of Electrochemical Society, Montreal,
Canada, May 1-6, 2011.
4. A. Usenko, Finishing of Silicon Film for Silicon-on-Glass, Proceedings of
International IEEE SOI Conference, San Diego, CA, Oct. 10-14 (2010) 123-
124.
5. A. Usenko, J. Senawiratne, Silicon Nitride Surface Conversion into Oxide
to Enable Hydrophilic Bonding, ECS Transactions Semiconductor Wafer
Bonding 11: Science, Technology, and Applications, Volume 33 Issue: 4
(2010) 475 – 483, presented at 218th Meeting of Electrochemical Society, Las
Vegas, NV, Oct 10-15, 2010.
6. Ta-Ko Chuang, Alex Usenko, and Jeffry Cites The Study of the Bonding
Energy on Silicon-to-Glass Wafer Bonding ECS Transactions
Semiconductor Wafer Bonding 11: Science, Technology, and Applications,
Volume 33 Issue: 4 (2010) 501 – 508, presented at 218th Meeting of
Electrochemical Society, Las Vegas, NV, Oct 10-15, 2010.
7. A.Y. Usenko, W.N. Carr, B. Chen, Transfer Of Single Crystalline Silicon
Nanolayer Onto Alien Substrate, IEEE Transaction on Nanotechnology, 3
(2004) 225-229.
8. Alexander Usenko, Layer Transfer Process for SOI with Improved
Manufacturability, Journal of Electronic Materials, 32 (2003) 872-876.
9. A.Y. Usenko, W.N. Carr, B. Chen, Transformation of Hydrogen Trapped
onto Microbubbles into H Platelet Layer in Si, Journal of Materials
Science: Materials in Electronics, 14 (2003) 305-309.

2. 2
10. A.Y. Usenko, W.N. Carr and B. Chen, Process for Extremely Thin Silicon-
on-Insulator Wafer, Technical Proceedings of the 2003 Nanotechnology
Conference and Trade Show, Volume 1, pp.546-549.
11. A.Y. Usenko, W.N. Carr, and B. Chen, Transfer of Single Crystalline
Silicon Nanolayer onto Alien Substrate, Proceedings of SPIE vol.5118
Nanotechnology, ed. by R.Vajtai, X. Aimerich, L. Kish, A. Rubio, SPIE,
Bellingham, WA, 2003, pp.474-481.
12. A.Y. Usenko, W.N. Carr, and B. Chen, Crystal Fracture Induced By
Decorating of Postimplantation Defects: Silicon Layer Delamination in:
Proceedings of the 14th International Conference on Ion Implantation
Technology, Taos, NM Sept. 2002, published by IEEE, 2003, pages 641 -
644.
13. Alexander Y. Usenko, Alexander G. Ulyashin, Thinner SOI Using Plasma
Hydrogenation, Japanese Journal of Applied Physics, Vol. 41 (2002) 5021-
5023.
14. A.Y. Usenko, W.N. Carr, and B. Chen, Plasma Hydrogenation Of A
Buried Trap Layer In Silicon: Formation Of A Platelet Layer, in: PV
2002-17 Plasma Processing XIV, ed. by G. S. Mathad, M. Yang, R. E. Sah,
and M. D. Allendorf, presented at 201st Meeting of Electrochemical Society,
Philadelphia, PA, May 12-17, 2002, The Electrochemical Society,
Pennington, NJ, pp.50-60, 2002.
15. A.Y. Usenko, W.N. Carr, B. Chen, Transformation of Hydrogen Trapped
onto Microbubbles into H Platelet Layer in Si, Conference Papers, The 4th
International Conference on Materials for Microelectronics and
Nanoengineering, 10-12 June 2002, Hanasaari Cultural Centre, Espoo,
Finland, IOM Publicatios, Ltd., London, UK, pp.53-57 (2002).
16. A.Y. Usenko, W.N. Carr, B. Chen, Y. Chabal, “Alternative Smart-cut-like
Process for Ultra-thin SOI Fabrication” Proceedings of the 13th Annual
IEEE/SEMI Advanced Semiconductor Manufacturing Conference and
Workshop ASMC 2002 - April 30 - May 2, 2002 at the Seaport Hotel, Boston,
Massachusetts, USA, pp.6-11.
17. A.Y. Usenko, W.N. Carr, B. Chen, Hydrogen Platelet Layer In Silicon
Formed From Hydrogen Trapped Onto Microbubbles Of Gases
Materials Research Society Symposium Proceeding v 719, 2002, p 263-268,
presented at MRS Spring Meeting, San-Francisco, CA, Apr. 1-5, 2002.
18. A.Y. Usenko, A.G. Ulyashin, W.N. Carr, W.R. Fahrner, A.V. Frantskevich,
R.Job, “Thinner SOI Using Plasma Hydrogenation”, Extended Abstracts
of International Conference on Solid State Devices and Materials, September
26-28, 2001 Tokyo, Japan, pp.244-245.
19. A.Y.Usenko, W.N. Carr, Blistering on Silicon Surface Caused by
Gettering of Hydrogen on Post-Implantation Defects, Materials Research
Society Symposium Proceeding Vol.681E, 2001, pp.I3.3.1-I3.3.6, presented
at MRS Spring Meeting, San-Francisco, CA, Apr. 16-20, 2001.

3. 3
20. A.Y. Usenko, and W.N. Carr, Electrolytic Hydrogenation Of Buried
Preamorphized Layer In Silicon For SOI Wafer Process, in: Silicon-on-
Insulator Technology and Devices X, ed. by S. Cristoloveanu, P. L. F.
Hemment, K. Izumi, G. K. Celler, F. Assaderaghi, Y.-W. Kim, PV 2001-3,
presented at 199th Meeting of Electrochemical Society, Washington, DC,
March 25-30, 2001, The Electrochemical Society, Pennington, NJ, pp.33-38.
21. A.Y.Usenko, W.N. Carr, Hydrogenation of Trap Layer as an SOI Process
Step, in: Proceedings of 2000 IEEE SOI Conference, Wakefield, MA,
Oct.2000, pp.16-17.
22. A. Y. Usenko, W. N. Carr, Silicon-on-Insulator Technology for
Microelectro-mechanical Applications, Semiconductor Physics Quantum
Electronics and Optoelectronics, 1999, vol. 2, no. 1, pp. 93-97.
23. A.Y. Usenko, and W.N. Carr, SOI Technology for MEMS Applications,
Proceedings of 9th International Symposium on Silicon-on-Insulator
Technology and Devices, Seattle WA, May 2-6, 1999, Proceedings Volume
99-3, pp.347-352, Electro-Chemical Society, Pennington, NJ, 1999.
Patents
24. Gang Wang, Jeff Libbert, Qingmin Liu, Alex Usenko, Shawn Thomas
Formation of monocrystalline Si layers on dissimilar substrates by top-
down solid phase epitaixlal recrystallization of amorphous Si. US Patent
application filed 2014.
25. Gang Wang, Jeff Libbert, Andrew Jones, Alex Usenko, Shawn Thomas HR-
SOI wafers for advanced RF applications and a method of
manufacturing thereof that includes SiGe oxidation. US Patent
application filed 2014.
26. Alex Usenko Thermally Stable Layer for Use in Making Silicon on
Insulator Wafers and Method of Making Such Layer. US Patent
application filed 2014.
27. Alex Usenko Silicon-on-Insulator Wafer with Reduced Parasitic Effects
and Process for Making the Same. US Patent application filed 2014.
28. Alex Usenko Handle Substrate for Use in Manufacturing of Silicon on
Insulator Substrate and Method of Manufacturing Thereof. US Patent
application filed 2014.
29. Bookbinder Dana, Kuksenkov Dmitri, Gross Tim Usenko, Alex Anti-
reflective textured Article and Method of Making by Fusing a
Monolayer of Spherical Particles to Glass Surface by Steam Treatment
US Patent application filed Nov.2012.
30. Enicks, Darwin G; Feng, Jiangwei; Kuksenkov, Dmitri V; Sternquist, Daniel
A; Usenko, Alex, Anti-Reflective Texture And Method Of Making By
Fusing A Monolayer Of Spherical Particles To Glass Surface By
Hydrothermal Treatment, US Patent application filed Nov.2012.
31. Usenko, Alex, Method for Finishing Silicon On Insulator Substrates Pub.
No.: WO2012012138 Publication Date: 26.01.2012.

4. 4
32. A. Usenko; Method For Finishing Silicon On Glass Substrates
PCT/US11/42168 filed 6/15/2011.
33. Potapenko, Sergey; Suman, Balram; Tian, Lili; Usenko, Alex; Methods Of
Making An Unsupported Article Of A Semiconducting Material Using
Thermally Active Molds Pub. No.: WO2012071365 Publication Date:
31.05.2012.
34. Potapenko, Sergey; Suman, Balram; Tian, Lili; Usenko, Alex; Methods Of
Making An Unsupported Article Of A Semiconducting Material Using
Thermally Active Molds, United States Patent Application 20120001293
published May 24, 2012.
35. Ben Mohamed; Nadia; Chuang; Ta Ko; Cites; Jeffrey Scott; Delprat; Daniel;
Usenko; Alex; Semiconductor On Glass Substrate With Stiffening Layer
And Process Of Making The Same Pub. No.: WO/2012/003157 Publication
Date: 05.01.2012.
36. Ben Mohamed; Nadia; Chuang; Ta Ko; Cites; Jeffrey Scott; Delprat; Daniel;
Usenko; Alex; Semiconductor On Glass Substrate With Stiffening Layer
And Process Of Making The Same United States Patent Application
20120001293 Published January 5, 2012.
37. Chuang; Ta Ko; Usenko; Alex; Oxygen Plasma Conversion Process For
Preparing A Surface For Bonding United States Patent Application
20120003813 Published January 5, 2012.
38. Chuang; Ta Ko; Usenko; Alex; Oxygen Plasma Conversion Process For
Preparing A Surface For Bonding WIPO Pub. No.: WO2012003161
Publication Date: 05.01.2012.
39. A. Usenko, Gallium Nitride to Silicon Direct Wafer Bonding United States
Patent Application 20120001293 12/30/2011.
40. A. Usenko; Semiconductor on Insulator Made Using Improved Defect
Healing Process US Patent Pending 20100216295, published August 26,
2010.
41. S. Cherekdjian; J. Cites, J. Couillard, R. Maschmeyer, M. Moore, A. Usenko,
Methods and apparatus for producing semiconductor on insulator
structures using directed exfoliation US Patent No. 7,816,225, issued
10/19/2010.
42. S. Cherekdjian; J. Cites, J. Couillard, R. Maschmeyer, M. Moore, A. Usenko,
Methods and apparatus for producing semiconductor on insulator
structures using directed exfoliation US Patent No. 8,003,491, issued
8/23/2011.
43. S. Cherekdjian; J. Cites, J. Couillard, R. Maschmeyer, M. Moore, A. Usenko,
Methods and apparatus for producing semiconductor on insulator
structures using directed exfoliation US Patent No. 8,003,491, issued
11/15/2011.

5. 5
44. A. Usenko Defect Healing In Semiconductor On Insulator By
Amorphization And Regrowth, International application (PCT) Pub. No.:
WO/2010/099045, PCT/US2010/024746, filed 19.02.2010.
45. S. Cherekdjian; J. Cites, J. Couillard, R. Maschmeyer, M. Moore, A. Usenko,
Methods and Apparatus for Producing Semiconductor on Insulator
Structures Using Directed Exfoliation International application (PCT)
WO/2010/059367 PCT/US2009/062531, 29.10.2009
46. A.Y. Usenko, Method for Forming a Fragile Layer Inside of a Single
Crystalline Substrate Preferably for Making Silicon-on-Insulator
Wafers US Patent No. 7,148,124, issued 12/12/2006.
47. A.Y. Usenko Process for forming a fragile layer inside of a single
crystalline substrate US Patent No. 6,995,075, issued 2/7/2006.
48. A.Y. Usenko Method of making starting material for chip fabrication
comprising a buried silicon nitride layer US Patent No. 6,861,320, issued
3/1/2005.
49. A.Y. Usenko, Method of Making Semiconductor-Insulator-Metal-
Semiconductor Layered Structure US Patent Pending 10/637675, filed
08/11/03.
50. A.Y. Usenko, Process for the Production of Thin Semiconductor
Material Films, US Patent Pending 10/391275, filed 03/18/03.
51. A.Y. Usenko, Process for the Production of Silicon-On-Insulator
Material Having High Thermally Conductive Insulator Layer US Patent
Pending 10/386877, filed 03/12/03.
52. A.G. Ulyashin, A.Y. Usenko, Method of Producing a Thin Layer of
Crystalline Material, US Patent No. 6,806,171, issued 10/19/2004.
53. W.N. Carr, A.Y. Usenko, Method Of Manufacture of a Multi-layered
Substrate with a Thin Single Crystalline Layer and a Versatile
Sacrificial Layer, US Patent No. 6,696,352, issued 02/24/2004.
54. W.N. Carr, A.Y. Usenko, Method Of Manufacture of a Multi-layered
Substrate with a Thin Single Crystalline Layer and a Versatile
Sacrificial Layer, International application (PCT) PCT/US02/33278, filed
18 October 2002, WO2004/010481, published 29 January 2004.
55. A. Usenko, Process for Forming a Fragile Layer Inside of a Single
Crystalline Substrate, International application (PCT) PCT/US02/27847,
filed 31 August 2002, WO2004/008514 A1, published 22 January 2004.
56. A.Y. Usenko, Process for lift-off a layer from a substrate, US Patent
6,352,909, issued 03/05/02.
57. A.Y. Usenko, A Method for Micro-Mechanical Structures, US Patent No.
6,344,417, issued 02/05/2002.

6. 6
58. A.Y. Usenko, W.N. Carr, Process for Lift off and Transfer of
Semiconductor Devices onto Alien Substrate, US Patent No.6,346,459
issued 02/12/2002.
59. A.Y. Usenko Method for forming IC's comprising a highly-resistive or
semi-insulating semiconductor substrate having a thin, low resistance
active semiconductor layer thereon, US Patent 6,355,493, issued 03/12/02.
60. A.Y. Usenko, Process for manufacturing a silicon-on-insulator substrate
and semiconductor devices on said substrate, US Patent 6,368,938, issued
04/09/02.
61. A.Y. Usenko, W.N. Carr, Separation Process For Silicon-On-Insulator
Wafer Fabrication, US Patent 6,387,829, issued 05/14/02.
62. A.Y. Usenko, W.N. Carr, Process For Lift Off And Transfer Of
Semiconductor Devices Onto An Alien Substrate, International
application (PCT) WO 00/46847, published 10 August 2000, Int.Class H01L
21/30, 21/46.
PresentationsatScientificMeetings
63. A. Usenko, G. Guryanov, Nanoscale Dielectric Films by Plasma Oxidation
NANOSMAT-5 - 5th International Conference on Surfaces, Coatings, and
Nanostructured Materials, Reims, France, October 19-21 2010.
64. J. Senawiratne, J. Cites, G. Couillard, J. Moll, A. Usenko, C. Kosik Williams,
P. Whiting Boron and Phosphorus Implantation Induced Electrically
Active Defects in p-type Silicon XIII International Autumn Meeting
Gettering and Defect Engineering in Semiconductor Technology GADEST
2009 September 26 - October 02, 2009 Döllnsee-Schorfheide, Germany.
65. P. Chen, P. K Chu, B. Chen, A. Usenko, and W. Carr, Combined use of
neon ion implantation and hydrogen plasma implantation in ion-cutting,
Materials Integration: Wafer Bonding and Alternative Substrates symposium
of the 2004 EMC June 23-25, Notre Dame University, Notre Dame, IN.
66. A.Y. Usenko, W.N. Carr and B. Chen, Process for Nanoscale Thick SOI
Substrate with Thermally Conductive Buried Insulator, 2004
Nanotechnology Conference, March 7-11, 2004, Boston, MA
67. B. Chen, W.N. Carr, and A.Y. Usenko, A New Method to Produce Silicon-
on-Insulator Implantation Ar+ Implantation with H+ Plasma Processing,
American Vacuum Society 50th Int. Symposium, Nov. 2-7, 2003 Baltimore,
MD.
68. Y. Glukhoy, G. Popov, M. Rahman, A. Usenko, ECR plasma immersion
ion implanter for SOI technology, XIIIth Int. Conference on Surface
Modification of Materials by Ion Beams (SMMIB), San Antonio, TX, Sept 21
- 26, 2003.
69. A.Y. Usenko, W.N. Carr, Transfer of Single Crystalline Silicon Nanolayer
onto Alien Substrate, SPIE Int. Symposium on Microtechnologies for the

7. 7
New Millennium 2003 EMT03 – Nanotechnology, 19–21 May 2003,
Maspalomas, Canary Islands, Spain, Technical Proceedings of the 2003
Nanotechnology Conf., vol.1.pp.546-549.
70. A.Y. Usenko, W.N. Carr, and B. Chen, Bondability of Plasma
Hydrogenated Silicon Wafers, Wafer Bonding Symposium at 203th Meeting
of Electrochemical Society, April 27-May 2, 2003, Paris, France.
71. Bo Chen, Huifang Xu, Ying-Bing Jiang, Alexander Usenko, William Carr,
The SOI Exfoliation Ar+ Implantation with H+ Plasma Processing,
Annual American Physical Society Meeting, March 3-7, 2003, Austin, TX.
72. B. Chen, A.Y. Usenko, W. N Carr, Nano-crack Growth by Ar+
Implantation with H+ Plasma Processing for SOI Exfoliation, 17th
Annual Symp. Laboratory for Surface Modification, Feb 27, 2003 Rutgers
Univ., Piscataway, NJ.
73. A.Y. Usenko, W.N. Carr, and B. Chen, Process for Extremely Thin
Silicon-on-Insulator Wafer, 2003 Nanotechnology Conf., Feb. 2003, San
Francisco, CA.
74. A.Y. Usenko, W.N. Carr, B. Chen, Crystal Fracture Induced By
Decorating Of Post-Implantation Defects: Silicon Layer Delaminating,
14th Int. Conf. on Ion Implantation Technology, IIT 2002 Sept. 22-27, 2002,
Taos, New Mexico, USA.
75. A.Y. Usenko, W.N. Carr, B. Chen, Layer Transfer Process for SOI with
Improved Manufacturability, International Conference on Alternative
Substrate Technologies, Omni Cancun Hotel, Cancun, Mexico, Sept. 15-19,
2002.
76. A.Y. Usenko, W.N. Carr, B. Chen, Transformation of Hydrogen Trapped
onto Microbubbles into H Platelet Layer in Si, MFMN 2002, 4th Int. Conf.
on Materials for Microelectronics and Nanoengineering, June 2002, Espoo,
Finland.
77. A.Y. Usenko, W.N. Carr, B. Chen, Plasma Hydrogenation Of A Buried
Trap Layer In Silicon: Formation Of A Platelet Layer, Int. Symp. on
Plasma Processing XIV at 201st Meeting of The Electrochemical Society,
Philadelphia, PA, May 12-17, 2002.
78. Bo Chen, Alexander Usenko, William Carr, Hydrogen Layer Formed in
the Implanted Wafer – an Important Step to Produce SOI Wafer, 2nd
AIMS Materials Research Symposium, May 8, 2002, NJIT, Newark, NJ.
79. W.N. Carr, B. Chen, A.Y. Usenko, Y.J. Chabal, Alternative Smart-cut-like
Process for Ultra-Thin SOI Fabrication, Advanced Semiconductor
Manufacturing Conference & Workshop (ASMC) Apr 30 - May 2, 2002,
Boston, MA.
80. A.Y. Usenko, W.N. Carr, B. Chen, Hydrogen Platelet Layer in Silicon
Formed from Hydrogen Trapped onto Microbubbles of Gases, 2002 MRS

8. 8
Spring Meeting, MRS Symposium F: Defect- and Impurity-Engineered
Semiconductors and Devices III, San Francisco, CA, Apr. 1-5, 2002.
81. W.N. Carr, B. Chen, A.Y. Usenko, Delamination of Crystalline Silicon
Film from Substrate through Hydrogenation of Trap Layer, Annual
American Physical Society March Meeting 2002, March 18 - 22, 2002,
Indianapolis, IN.
82. A. Usenko, “Silicon-on-Insulator Technology: Creation of the internal
surface and surface annihilation”, Surface Science Seminar at Laboratory
for Surface Modification, Rutgers University, Piscataway, NJ February 21,
2002.
83. W. N. Carr, A. Usenko, “Making Silicon-on-Insulator: Application for
Phenomena of Creation of Internal Surface and Surface Annihilation”,
presented at Sixteenth Annual Symposium of the Laboratory for Surface
Modification, February 7, 2002, Rutgers University, Piscataway, NJ.
84. W.N. Carr, B. Chen, A.Y. Usenko, Improved Process for Thin Silicon-On-
Insulator, Advanced Workshop on 'Frontiers in Electronics' (WOFE) St.
Croix, Virgin Islands, USA January 6 - January 11 (2002), Program and
Abstracts, pp.64-65.
85. William Carr, Alexander Usenko, Commercialization Opportunities in the
SOI Wafer Market, 6th International Conference on the Commercialization
of Microsystems COMS 2001, 2-6 September, 2001 Keble College, Oxford,
UK.
86. A.Y. Usenko, and W.N. Carr, Electrolytic Hydrogenation Of Buried
Preamorphized Layer In Silicon For SOI Wafer Process, presented at
199th Meeting of Electrochemical Society, Washington, DC, March 25-30,
2001.
87. A.Y.Usenko, W.N.Carr, What Limits an Amount of Hydrogen to Trap
onto Preamorhized Layer in Silicon? Presented at Gordon Research
Conference on Point and Line Defects in Semiconductors, July 9-14, 2000,
Colby-Sawyer College, New London, NH.