Resistive RAMs are non-volatile RAMs and with the help of Nanomaterials we can make them faster in switching speed,smaller in size and store information in "Terabit" scale or more.In a nutshell "a revolution in the market of memory devices".

1. BY:
DEBDUT SENGUPTA 41
JOYABRATA BHATTACHARJEE 54
UNDER THE GUIDANCE OF:
PROF.SOURAV GHOSH

2. What is RAM?
• Random access memory
(RAM) is a type of data
storage used in computers
that is generally located on
the motherboard.
• This type of memory is
volatile.
• It is made up of transistors
and capacitors .

3. Different types of RAM
RAM
SRAM DRAM MRAM

4. What is Resistive RAM?
• Resistive random-access
memory (RRAM or ReRAM) is a type
of nonvolatile memory(NV).
• It is computer memory that works by
changing the resistance across
a dielectric solid-state material often
referred to as a memristor.
• It is a passive two-terminal electronic
device.

6. How does RRAM work?
• Bipolar Resistive
switching mechanism.
• There is a change in the
resistance of the
dielectric due to the
applied voltage.
• Memristors, which are
considered to be a sub-
category of resistive
RAM.

7. What are Nanomaterials?
• Materials of which a single unit is sized between 1
and 1000 nm (10^-9 m).
• They have unique optical, electronic, or mechanical
properties.
• TYPES:-
1. Natural nanomaterials
2.Fullerenes.
3.Graphene nanostructures.
4.Nanoparticles.

8. Advantage of using Nanomaterials in RRAM
• Increase in storage capacity.
• Faster execution.
• Low power consumption.
• Increase in scalability and facile
integration.

9. There are mainly two types of
Nanomaterial based RRAMs
RRAMs using
Nanomaterials
Triple
layered
Single
layered

10. Structural details of the two
types of RRAMs
• Another device
structure has a single
layer sandwiched
between two metal
electrodes
• The layer contains Au-
DT NPs, 8HQ, PS.
• One has a triple-layer
structure,sandwiched
between two
aluminum (Al)
electrodes.
• Upper and lower layer
has organic
semiconductors and
the middle layer has
metal NPs.

11. ELECTRICAL
CHARACTERISTICS of the
nanoparticle devices
I–V curve of an Al/Au-DT NPs+8HQ+PS/Al device

12. MEMORY
APPLICATION
S OF NP
BASED RRAM
The top and bottom curves
are the applied voltage and
the corresponding current,
respectively.W, R, and E in
the top figure mean write,
read and erase,
respectively.
The labels ‘1’ and ‘0’ in the
bottom figure indicate the
device in theON and OFF
state.
THE CYCLE
DEMONSTRATESTHAT
THE DEVICE CAN BE USED
AS A MEMORY DEVICE.

13. ADVANTAGES
• The transition time from ON to OFF
is less than 25ns.
• The resistive switches can be
repeated number of times and can
be driven by short voltage pulses.
• Since this is a non volatile memory
device so there is a better stability
in the two states.
• These devices have a faster
response to external electric fields
and can have extremely high
density due to the nanometer size
of the materials.

14. DISADVANTAGES
• The nanomaterial
lithographic and
fabrication process is
quite expensive
because of the high
cost of nanoparticles
synthesis.
• Compared to basic
semiconductor
materials, some of the
nanomaterials may get
corroded more easily.

15. Future Scope:
• Nanomaterial based RRAM is
scalable below 30nm.So the size of
future memory devices can be highly
reduced.
• As RRAM has high response speed,
is non-volatile, so it can replace
DRAMs and Flash memories.
• Due to high density of nanomaterial
based RRAM,it can store
informations in “terabit” scale or
higher.