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IGBT AND SCR.pptx
1. IGBT
Insulated Gate Bipolar Transistor
Three-terminal semiconductor switching
device – GATE, EMITTER, COLLECTOR
IGBT as a fusion between BJT and MOSFET
Power electronic switching device
Collector and the Emitter are the
conduction terminals.
gate is the control terminal
2. • IGBT combines the low saturation voltage of
a transistor with the high input impedance
and switching speed of a MOSFET.
• IGBT is a voltage controlled semiconductor
which enables large collector emitter
currents with almost zero gate current drive.