SPICE MODEL of 2SK2740 (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: Power MOSFET (Standard)
PART NUMBER: 2SK2740
MANUFACTURER: ROHM
REMARK: Body Diode (Standard)
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

2. POWER MOSFET MODEL
Pspice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Modility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

3. Body Diode Model
Pspice model
Model description
parameter
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
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4. Transconductance Characteristic
Circuit Simulation Result
Comparison table
VGS(V)
ID(A) Error (%)
Measurement Simulation
1.000 2.450 2.350 -4.082
2.000 3.330 3.260 -2.102
5.000 5.000 5.050 1.000
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5. Vgs-Id Characteristic
Circuit Simulation result
20A
10A
1.0A
100mA
0V 1V 2V 3V 4V 5V 6V 7V 8V 9V
I(V2)
V_V1
Evaluation circuit
V2
0V dc
V3
V1
10 Vd c 25 Vd c
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

6. Comparison Graph
Circuit Simulation Result
Simulation Result
VGS(V)
ID(A) Error (%)
Measurement Simulation
0.500 4.330 4.440 2.540
1.000 4.650 4.694 0.946
2.000 5.050 5.052 0.040
5.000 5.780 5.772 -0.138
7.000 6.150 6.136 -0.228
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

7. Id-Rds(on) Characteristic
Circuit Simulation result
5.0A
0A
0V 1.0V 2.0V 3.0V 4.0V 5.0V
I(V2)
V_V3
Evaluation circuit
V2
0Vdc
V3
V1
10Vdc 25Vdc
0
Simulation Result
ID=4, VGS=10V Measurement Simulation Error (%)
R DS (on) 1.000  1.000  0.000
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

8. Gate Charge Characteristic
Circuit Simulation result
20V
18V
16V
14V
12V
10V
8V
6V
4V
2V
0V
0 4n 8n 12n 16n 20n 24n 28n 32n 36n 40n
V(W1:3)
Time*10ms
Evaluation circuit
V2
0Vdc
Dbreak
PER = 1000u D1
PW = 600u I2
TF = 10n W1 7Adc
TR = 10n +
TD = 0
I2 = 10m
-
I1 W
I1 = 0 IOFF = 1mA V1
ION = 0uA 250Vdc
0
Simulation Result
VDD=250V Measurement Simulation Error (%)
,ID=7A
Qgs 7.200 nC 7.210 nC 0.139
Qgd 20.800 nC 20.790 nC -0.048
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

9. Capacitance Characteristic (Vds vs. Cbd)
Measurement
Simulation
Simulation Result
Cbd(pF)
VDS(V) Error(%)
Measurement Simulation
1.000 250.000 253.000 1.200
2.000 230.000 226.300 -1.609
5.000 180.000 176.500 -1.944
10.000 133.000 135.000 1.504
20.000 96.000 98.000 2.083
50.000 58.000 60.300 3.966
100.000 42.000 41.000 -2.381
200.000 29.000 28.000 -3.448
500.000 17.000 16.500 -2.941
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

10. Switching Time Characteristic
Circuit Simulation result
12V
VDS =153 (V)
VGS = 10V
8V
4V
0V
5.00us 5.10us 5.20us
V(2) V(3)/15.3
Time
Evaluation circuit
L1 RL
3
V3 0.03uH 37.5
0Vdc
VDD
153
L2 RG
2
0.03uH
10
V1 = 0 0
V1
V2 = 10
TD = 5u
TR = 6n
TF = 7n
PW = 10u
PER = 100u
0
0
Simulation Result
ID=4A, VDD=153V
Measurement Simulation Error(%)
VGS=0/10V
td (on) 19.000 ns 18.994 ns -0.032
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

11. Output Characteristic
Circuit Simulation result
10A
6.0V
5A
5.5V
5.0V
VGS=4.5V
0A
0V 25V 50V
I(V2)
V_V3
Evaluation circuit
V2
0V dc
V3
V1
25 Vd c
10 .0Vd c
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

12. Output Characteristic Reference
6.0V
5.5V
5.0V
VGS=4.5V
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

13. Forward Current Characteristic of Reverse Diode
Circuit Simulation Result
10A
1.0A
100mA
0V 1.0V 1.6V
I(V2)
V_V3
Evaluation Circuit
R1
0.0 1m
V2
0V dc
V3
0V dc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

14. Comparison Graph
Circuit Simulation Result
Simulation Result
Vfwd(V) Vfwd(V)
Ifwd(A) %Error
Measurement Simulation
0.100 0.598 0.594 -0.669
0.200 0.620 0.620 -0.020
0.500 0.658 0.658 0.024
1.000 0.692 0.693 0.166
2.000 0.738 0.739 0.163
5.000 0.838 0.837 -0.097
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

15. Reverse Recovery Characteristic
Circuit Simulation Result
400mA
0A
-400mA
14us 18us 22us 26us 30us 34us
I(R1)
Time
Evaluation Circuit
R1
50
V1 = {-9.4} V1
V2 = {10.7}
TD = 100n
TR = 10n
TF = 10n
PW = 5u
PER = 50u
0
0
Compare Measurement vs. Simulation
Measurement Simulation Error (%)
trr=trj+trb 2.360 us 2.361 us 0.042
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16. Reverse Recovery Characteristic Reference
Trj=1.480(us)
Trb=0.880(us)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005