SPICE MODEL of CCS15S30 (Professional Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
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SPICE MODEL of CCS15S30 (Professional Model) in SPICE PARK
1. All Rights Reserved Copyright (C) Bee Technologies Inc. 2015
1
Device Modeling Report
Bee Technologies Inc.
COMPONENTS: SiC Schottky Barrier Diode
PART NUMBER: CCS15S30
MANUFACTURER: TOSHIBA
REMARK: Professional Model
2. All Rights Reserved Copyright (C) Bee Technologies Inc. 2015
2
Circuit Configuration
DIODE MODEL PARAMETERS
PSpice
model
parameter
Model description
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap
3. All Rights Reserved Copyright (C) Bee Technologies Inc. 2015
3
U1
CCS15S30
R1
0.01m
V1
0Vdc
0
V_V1
0V 100mV 200mV 300mV 400mV 500mV 600mV
I(R1)
100uA
1.0mA
10mA
100mA
1.0A
10A
Forward Current Characteristics
Circuit Simulation result
Evaluation circuit
4. All Rights Reserved Copyright (C) Bee Technologies Inc. 2015
4
Comparison Graph
Circuit Simulation result
Comparison table
IF (A)
VF (V)
%Error
Measurement Simulation
0.0001 0.0310 0.0315 1.61
0.001 0.0840 0.0831 -1.07
0.01 0.1450 0.1430 -1.38
0.1 0.2200 0.2200 0.00
1 0.3400 0.3400 0.00
5. All Rights Reserved Copyright (C) Bee Technologies Inc. 2015
5
V(R)
0V 5V 10V 15V 20V 25V 30V
I(V2)/(30V/1u)
10p
100p
1.0n
U1
CCS15S30
0
R
V1
TD = 0
TF = 100ns
PW = 100us
PER = 10m
V1 = 0
TR = 1us
V2 = 30
V2
0Vdc
Junction Capacitance Characteristic
Circuit Simulation result
Evaluation circuit
7. All Rights Reserved Copyright (C) Bee Technologies Inc. 2015
7
U1
CCS15S30
V1
0Vdc
R1
100m
0
Reverse Characteristic
Circuit Simulation result
Evaluation circuit
8. All Rights Reserved Copyright (C) Bee Technologies Inc. 2015
8
Comparison Graph
Circuit Simulation result
Comparison table
VR (V)
IR (mA)
%Error
Measurement Simulation
1.000 0.060 0.062 2.50
2.000 0.075 0.074 -1.07
5.000 0.103 0.104 0.97
10.000 0.130 0.133 2.31
20.000 0.148 0.150 1.35
30.000 0.175 0.179 2.29