This document summarizes the component specifications and simulation results for a Schottky rectifier diode with part number XBS203V17R. It includes: 1) Details on the diode parameters used in the PSpice model such as saturation current, emission coefficient, series resistance, and breakdown voltage. 2) Simulation results showing the forward current, capacitance, and reverse recovery characteristics match closely with measurements, with less than 2% error. 3) An evaluation of the reverse recovery time showing the simulated value is within 1.32% of the measured value.

1. Device Modeling Report
COMPONENTS:
DIODE/ SCHOTTKY RECTIFIER / STANDARD
PART NUMBER: XBS203V17R
MANUFACTURER: TOREX SEMICONDUCTOR
Bee Technologies Inc.
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
1

2. PSpice model
Model description
parameter
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
2

3. Forward Current Characteristic
Circuit Simulation Result
10A
1.0A
100mA
10mA
0V 200mV 400mV 600mV
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
V1 D1
0Vdc DXBS203V17R
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
3

4. Comparison Graph
Circuit Simulation Result
10
Measurement
Simulation
Forward Current:IF (A)
1
0.1
0.01
0 0.2 0.4 0.6
Forward Voltage:VF (V)
Simulation Result
VF (V)
IF (A) %Error
Measurement Simulation
0.01 0.165 0.164 -0.518
0.02 0.185 0.182 -1.476
0.05 0.205 0.207 0.785
0.1 0.225 0.226 0.280
0.2 0.245 0.246 0.304
0.5 0.275 0.276 0.369
1 0.305 0.305 -0.036
2 0.345 0.345 -0.083
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
4

5. Capacitance Characteristic
Circuit Simulation Result
1.0n
0.8n
0.6n
0.4n
0.2n
0
1V 10V 20V 30V
I(V2)/(30V/10n)
V(N16610)
Evaluation Circuit
V2
0Vdc
V2 = 30 V1 D1
V1 = 0 DXBS203V17R
TD = 0
TR = 10ns
TF = 10ns
PW = 10us
PER = 50us
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
5

6. Comparison Graph
Circuit Simulation Result
1000
Measurement
Simulation
Inter-Terminal Capacity:Ct (pF)
800
600
400
200
0
1 11 21
Reverse Voltage:VR(V)
Simulation Result
Ct (pF)
VR (V) %Error
Measurement Simulation
1 280.000 276.991 -1.07
5 169.000 171.675 1.58
10 120.000 121.779 1.48
15 96.000 96.423 0.44
20 82.000 80.664 -1.63
25 71.000 69.983 -1.43
30 63.000 62.033 -1.53
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
6

7. Reverse Recovery Characteristic
Circuit Simulation Result
20mA
15mA
10mA
5mA
0mA
-5mA
-10mA
-15mA
-20mA
1.6us 1.8us 2.0us 2.2us 2.4us 2.6us
I(R1)
Time
Evaluation Circuit
R1
100
V2 = 1.16V
V1 = -0.85V
TD = 0ns V1 D1
TR = 1ns DXBS203V17R
PW = 2us
TF = 1ns
PER = 50us
0
Compare Measurement vs. Simulation
Parameter Unit Measurement Simulation %Error
trr ns 70.000 70.927 1.32
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
7