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Using cathodoluminescence in nanotechnology has been and remains a cornerstone in the development of light emitting diodes and laser diodes with high light intensity. Optoelectronic semiconductors based on nitrides such as AlN, GaN, InN and its alloys have wide forbidden bands ranging from 6.2 (AlN) 0.7 eV (InN), covering the visible spectral range. Today, there is great difficulty in obtaining devices that emit light at longer wavelengths (green-yellow). This is especially due to: (1) compositional instability and phase separation, and (2) the difference in lattice parameters limiting indium incorporation at the interfaces InGaN / GaN and produces piezoelectric fields which separate the carriers (electrons and holes) thereby decreasing the efficiency recombine.
With cathodoluminescence, one can obtain images and spectra with high resolution that show the phase difference and the separation of carriers in quantum wells, respectively. Additionally, one can measure the time of excitation and de-excitation of the recombination of electrons and holes with high temporal resolution via time-resolved cathodoluminescence.
Cathodoluminescence microscopy combined with the electronic transmission and electronic holography provides a correlation of optical properties, structural, and electronic semiconductors which facilitates the researcher in analyzing and solving the physical nature of these materials.