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Simplify the Science of ALD.




                               Cambridge NanoTech
                               Corporate Overview




                               August 2009
Cambridge NanoTech ALD Systems




   • All Cambridge NanoTech ALD Systems are controlled with a
       convenient Labview-PC-USB interface.
   •   All ALD systems have hot walls with cross-flow precursor
       deposition. N2 gas is used for high speed pulse-purge cycles.
   •   Prior to deposition, a substrate is inserted into the ALD reactor,
       and is heated usually between 50-400ºC.

Cambridge NanoTech Inc. Confidential   2
ALD Cycle for Al2O3 Deposition
    Tri-methyl
    aluminum                                 Methyl group                                Methane reaction
                                             (CH3)                     Reaction of       product (CH4)
    Al(CH3)3(g)                                                                                                        H
                                                                       TMA with OH
                  H         Al                                                                                     C
                      C                                                                                                    H
                      H                            Hydroxyl (OH)                              H           H        H
                  H
                                                   from surface                            H C            C H
                                                   adsorbed H2O                             H
                                                                                                  Al
                                    H

                                    O                                                                 O


                          Substrate surface (e.g. Si)                                    Substrate surface (e.g. Si)


    Trimethyl Aluminum (TMA) reacts with the                           In air H2O vapor is adsorbed on most surfaces,
    adsorbed hydroxyl groups, producing methane as                     forming a hydroxyl group. With silicon this forms:
    the reaction product.                                              Si-O-H (s). After placing the substrate in the
                                                                       reactor, Trimethyl Aluminum (TMA) is pulsed into
                                                                       the reaction chamber.


    • Trimethyl Aluminum (TMA) reacts with the adsorbed
          hydroxyl groups, producing methane as the reaction
          product.
                                                                        Al(CH3)3 (g) + : Si-O-H (s)           :Si-O-Al(CH3)2   (s)   + CH4



Cambridge NanoTech Inc. Confidential                               3
ALD Cycle for Al2O3 Deposition

                                          Methane
                                          reaction
                                          product CH4                   H
                          Reaction of                               H   C
                          TMA with OH                       H           H
                                                                            H
                                               H
                                           H   C        C       H
                                               H
                                                   Al

                                                   O

                                 Substrate surface (e.g. Si)




    • Trimethyl Aluminum (TMA) reacts with the adsorbed
        hydroxyl groups, producing methane as the reaction
        product.
                                                   Al(CH3)3 (g) + : Si-O-H      (s)   :Si-O-Al(CH3)2   (s)   + CH4




Cambridge NanoTech Inc. Confidential                    4
ALD Cycle for Al2O3 Deposition

                         Excess TMA                             Methane reaction
                                                                product CH4




                                               H            H
                                           H   C        C
                                               H
                                                   Al

                                                   O

                               Substrate surface (e.g. Si)




    • Trimethyl Aluminum (TMA) reacts with the adsorbed
        hydroxyl groups, until the surface is passivated. TMA does
        not react with itself, terminating the reaction to one layer.
        This causes the perfect uniformity of ALD. The excess TMA
        is pumped away with the methane reaction product.


Cambridge NanoTech Inc. Confidential                    5
ALD Cycle for Al2O3 Deposition

                                H 2O
                                           O
                                       H           H



                                               H               H
                                           H   C           C
                                               H
                                                   Al

                                                       O




    • After the TMA and methane reaction product is pumped
        away, water vapor (H2O) is pulsed into the reaction chamber.




Cambridge NanoTech Inc. Confidential                       6
ALD Cycle for Al2O3 Deposition

                                                 Methane reaction product
                                New hydroxyl group


                         Methane reaction
                                                  H            Oxygen bridges
                         product
                                                 O
                                                          O
                                        Al       Al           Al

                                                 O




    • H2O reacts with the dangling methyl groups on the new
        surface forming aluminum-oxygen (AI-O) bridges and
        hydroxyl surface groups, waiting for a new TMA pulse.
        Again, methane is the reaction product.

                                                  2 H2O (g) + :Si-O-Al(CH3)2   (s)   :Si-O-Al(OH)2   (s)   + 2 CH4



Cambridge NanoTech Inc. Confidential                  7
ALD Cycle for Al2O3 Deposition



                                                H
                                                O
                                            O        O
                                       Al       Al       Al

                                                O




    • The reaction product methane is pumped away. Excess H2O
        vapor does not react with the hydroxyl surface groups, again
        causing perfect passivation to one atomic layer.




Cambridge NanoTech Inc. Confidential            8
ALD Cycle for Al2O3 Deposition


                                         H        H        H
                                         O        O        O
                                              O        O
                                         Al       Al       Al
                                         O        O        O
                                              O        O
                                         Al       Al       Al
                                         O        O O      O
                                              O
                                         Al       Al       Al
                                         O        O        O




    • One TMA and one H2O vapor pulse form one cycle. Here
        three cycles are shown, with approximately 1 Angstrom per
        cycle. Each cycle including pulsing and pumping takes, e.g.
        3 sec.
                       Two reaction steps          Al(CH3)3 (g) + :Al-O-H   (s)   :Al-O-Al(CH3)2    (s)   + CH4
                            in each cycle:        2 H2O (g) + :O-Al(CH3)2         :Al-O-Al(OH)2           + 2 CH4
                                                                            (s)                    (s)




Cambridge NanoTech Inc. Confidential              9
ALD Cycle for Al2O3 Deposition




    • The saturative chemisorption of each layer and its
        subsequent monolayer passivation in each cycle, allows
        excellent uniformity into high aspect ratio 3D structures,
        such as DRAM trenches, MEMS devices, around particles, etc.



Cambridge NanoTech Inc. Confidential   10
ALD Deposition Advantages
            Alternating reactant exposure creates unique
                  properties of deposited coatings:

   • Thickness determined simply by number of cycles
   • Precursors are saturatively chemisorbed => stoichiometric
     films with large area uniformity and 3D conformality
   • Relatively insensitive to dust (film grows underneath dust
     particles)
   • Intrinsic deposition uniformity and small source size =>
     easy scaling
   • Nanolaminates and mixed oxides possible
   • Low temperature deposition possible (RT-400 ºC)
   • Gentle deposition process for sensitive substrates


Cambridge NanoTech Inc. Confidential   11
Cambridge NanoTech ALD Systems

   • Savannah - Thermal ALD System for R&D
      – More than 100 systems sold
   • Fiji – Plasma ALD System for R&D
      – Next generation plasma ALD system
   • Phoenix – Batch Production Thermal ALD System
      – Batch production for Gen 2 substrates and wafers
   • Tahiti – Large Surface Area Production Thermal ALD System
      – Stackable chambers for Gen 4.5 substrates




           Savannah                    Fiji        Phoenix   Tahiti


Cambridge NanoTech Inc. Confidential          12
Savannah ALD Systems

    • World’s most popular ALD system for R&D
    • Great films and easy to use
       – System set up in under 3 hours
       – Intuitive user interface very easy to learn
       – Recipes included




          Savannah S100                Savannah S200   Savannah S300


Cambridge NanoTech Inc. Confidential           13
Patent Pending ALD ShieldTM Trap

                 Flow direction



     Coating


    No coating
                                            Cambridge NanoTech’s high
                                            conductance hot foil ALD trap
                                            forms a uniform solid coating
                                            until the precursor is depleted.
                                            Traps can be cleaned after 100
                                            µm of coating.


Cambridge NanoTech Inc. Confidential   14
Fiji: Next Gen Plasma ALD System

• Revolutionary reactor design built from ALD
  principals, NOT a converted CVD chamber:
     – Contoured shape for laminar flow and uniform
         depositions
     –   Design eliminates gate valves in the reactor
     –   Close mixing of precursor and plasma gases
• Based on world class Savannah ALD system
     – Proven precursor delivery system
     – Integrated ALD Shield vapor trap
• Modular design and many configurations
     – Single and dual chamber configurations available
     – Options include load lock, turbo pumps, and
         automatic pressure control (APC)


Cambridge NanoTech Inc. Confidential   15
Sample Fiji Configurations




    Single Chamber with                Dual Chamber   Dual Chamber with
    Load Lock                                         Cleanroom Façade


    Also Available: Dual chamber with load locks, Single chamber with
    clean room façade, and optional analysis ports in reaction chamber


Cambridge NanoTech Inc. Confidential      16
Phoenix Batch ALD System

                                 Phoenix System Overview
                                 • Batch ALD production system
                                    – 5 GEN 2 substrates (370x470 mm)
                                    – 52 wafers: 200 mm
                                    – 78 wafers: 150 mm
                                    – Large objects
                                 • Deposition temperature: 85–285 C
                                 • Uniformity < 3% 2-sigma (Al2O3)
                                 • Small footprint: 700x700 mm
                                 • Optimized for low maintenance
                                    – stainless steel liner and trap easily
                                       exchanged for periodic cleaning
                                    – Exchange time approx. 1 hour
                                 • Patent pending trap prevents coating inside the
                                   pumping line and pump decreasing pumping line
                                   and pump maintenance


Cambridge NanoTech Inc. Confidential         17
Tahiti ALD System

                                 Tahiti System Overview
                                 • Tahiti Large Surface Area production system
                                     – 2 Gen 4.5 substrates
                                     – Scalable to accommodate Gen 5 substrates
                                        and larger
                                 • Uniformity < 5% 3-sigma (Al2O3)
                                 • Dual stacked chambers saves cleanroom space
                                 • Optimized for low maintenance
                                    – Stainless steel liner and trap easily
                                       exchanged for periodic cleaning
                                 • Patent pending trap prevents coating inside the
                                   pumping line and pump decreasing pumping line
                                   and pump maintenance
                                 • Automation-ready with easy network
                                   connectivity and on-board diagnostics.



Cambridge NanoTech Inc. Confidential         18
Cambridge NanoTech Summary
   •   Cambridge NanoTech is a world leader in ALD technology
        – World-class ALD scientist led by Dr. Jill Becker, Founder
        – Leading ALD research with association with Harvard Univ.
   •   Leader in ALD R&D systems with over 150 Savannahs worldwide
        – Many satisfied customers and references
   •   Developed Phoenix and Fiji ALD systems under contract with CNT
       customers
        – Leading Semiconductor manufacturer hired CNT to develop
           the Phoenix ALD production system
        – Leading R&D Institute hired CNT to develop the next
           generation plasma ALD system - Fiji

                        www.cambridgenanotech.com
                     See Website for additional information

Cambridge NanoTech Inc. Confidential    19

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Cambridge NanoTech Overview

  • 1. Simplify the Science of ALD. Cambridge NanoTech Corporate Overview August 2009
  • 2. Cambridge NanoTech ALD Systems • All Cambridge NanoTech ALD Systems are controlled with a convenient Labview-PC-USB interface. • All ALD systems have hot walls with cross-flow precursor deposition. N2 gas is used for high speed pulse-purge cycles. • Prior to deposition, a substrate is inserted into the ALD reactor, and is heated usually between 50-400ºC. Cambridge NanoTech Inc. Confidential 2
  • 3. ALD Cycle for Al2O3 Deposition Tri-methyl aluminum Methyl group Methane reaction (CH3) Reaction of product (CH4) Al(CH3)3(g) H TMA with OH H Al C C H H Hydroxyl (OH) H H H H from surface H C C H adsorbed H2O H Al H O O Substrate surface (e.g. Si) Substrate surface (e.g. Si) Trimethyl Aluminum (TMA) reacts with the In air H2O vapor is adsorbed on most surfaces, adsorbed hydroxyl groups, producing methane as forming a hydroxyl group. With silicon this forms: the reaction product. Si-O-H (s). After placing the substrate in the reactor, Trimethyl Aluminum (TMA) is pulsed into the reaction chamber. • Trimethyl Aluminum (TMA) reacts with the adsorbed hydroxyl groups, producing methane as the reaction product. Al(CH3)3 (g) + : Si-O-H (s) :Si-O-Al(CH3)2 (s) + CH4 Cambridge NanoTech Inc. Confidential 3
  • 4. ALD Cycle for Al2O3 Deposition Methane reaction product CH4 H Reaction of H C TMA with OH H H H H H C C H H Al O Substrate surface (e.g. Si) • Trimethyl Aluminum (TMA) reacts with the adsorbed hydroxyl groups, producing methane as the reaction product. Al(CH3)3 (g) + : Si-O-H (s) :Si-O-Al(CH3)2 (s) + CH4 Cambridge NanoTech Inc. Confidential 4
  • 5. ALD Cycle for Al2O3 Deposition Excess TMA Methane reaction product CH4 H H H C C H Al O Substrate surface (e.g. Si) • Trimethyl Aluminum (TMA) reacts with the adsorbed hydroxyl groups, until the surface is passivated. TMA does not react with itself, terminating the reaction to one layer. This causes the perfect uniformity of ALD. The excess TMA is pumped away with the methane reaction product. Cambridge NanoTech Inc. Confidential 5
  • 6. ALD Cycle for Al2O3 Deposition H 2O O H H H H H C C H Al O • After the TMA and methane reaction product is pumped away, water vapor (H2O) is pulsed into the reaction chamber. Cambridge NanoTech Inc. Confidential 6
  • 7. ALD Cycle for Al2O3 Deposition Methane reaction product New hydroxyl group Methane reaction H Oxygen bridges product O O Al Al Al O • H2O reacts with the dangling methyl groups on the new surface forming aluminum-oxygen (AI-O) bridges and hydroxyl surface groups, waiting for a new TMA pulse. Again, methane is the reaction product. 2 H2O (g) + :Si-O-Al(CH3)2 (s) :Si-O-Al(OH)2 (s) + 2 CH4 Cambridge NanoTech Inc. Confidential 7
  • 8. ALD Cycle for Al2O3 Deposition H O O O Al Al Al O • The reaction product methane is pumped away. Excess H2O vapor does not react with the hydroxyl surface groups, again causing perfect passivation to one atomic layer. Cambridge NanoTech Inc. Confidential 8
  • 9. ALD Cycle for Al2O3 Deposition H H H O O O O O Al Al Al O O O O O Al Al Al O O O O O Al Al Al O O O • One TMA and one H2O vapor pulse form one cycle. Here three cycles are shown, with approximately 1 Angstrom per cycle. Each cycle including pulsing and pumping takes, e.g. 3 sec. Two reaction steps Al(CH3)3 (g) + :Al-O-H (s) :Al-O-Al(CH3)2 (s) + CH4 in each cycle: 2 H2O (g) + :O-Al(CH3)2 :Al-O-Al(OH)2 + 2 CH4 (s) (s) Cambridge NanoTech Inc. Confidential 9
  • 10. ALD Cycle for Al2O3 Deposition • The saturative chemisorption of each layer and its subsequent monolayer passivation in each cycle, allows excellent uniformity into high aspect ratio 3D structures, such as DRAM trenches, MEMS devices, around particles, etc. Cambridge NanoTech Inc. Confidential 10
  • 11. ALD Deposition Advantages Alternating reactant exposure creates unique properties of deposited coatings: • Thickness determined simply by number of cycles • Precursors are saturatively chemisorbed => stoichiometric films with large area uniformity and 3D conformality • Relatively insensitive to dust (film grows underneath dust particles) • Intrinsic deposition uniformity and small source size => easy scaling • Nanolaminates and mixed oxides possible • Low temperature deposition possible (RT-400 ºC) • Gentle deposition process for sensitive substrates Cambridge NanoTech Inc. Confidential 11
  • 12. Cambridge NanoTech ALD Systems • Savannah - Thermal ALD System for R&D – More than 100 systems sold • Fiji – Plasma ALD System for R&D – Next generation plasma ALD system • Phoenix – Batch Production Thermal ALD System – Batch production for Gen 2 substrates and wafers • Tahiti – Large Surface Area Production Thermal ALD System – Stackable chambers for Gen 4.5 substrates Savannah Fiji Phoenix Tahiti Cambridge NanoTech Inc. Confidential 12
  • 13. Savannah ALD Systems • World’s most popular ALD system for R&D • Great films and easy to use – System set up in under 3 hours – Intuitive user interface very easy to learn – Recipes included Savannah S100 Savannah S200 Savannah S300 Cambridge NanoTech Inc. Confidential 13
  • 14. Patent Pending ALD ShieldTM Trap Flow direction Coating No coating Cambridge NanoTech’s high conductance hot foil ALD trap forms a uniform solid coating until the precursor is depleted. Traps can be cleaned after 100 µm of coating. Cambridge NanoTech Inc. Confidential 14
  • 15. Fiji: Next Gen Plasma ALD System • Revolutionary reactor design built from ALD principals, NOT a converted CVD chamber: – Contoured shape for laminar flow and uniform depositions – Design eliminates gate valves in the reactor – Close mixing of precursor and plasma gases • Based on world class Savannah ALD system – Proven precursor delivery system – Integrated ALD Shield vapor trap • Modular design and many configurations – Single and dual chamber configurations available – Options include load lock, turbo pumps, and automatic pressure control (APC) Cambridge NanoTech Inc. Confidential 15
  • 16. Sample Fiji Configurations Single Chamber with Dual Chamber Dual Chamber with Load Lock Cleanroom Façade Also Available: Dual chamber with load locks, Single chamber with clean room façade, and optional analysis ports in reaction chamber Cambridge NanoTech Inc. Confidential 16
  • 17. Phoenix Batch ALD System Phoenix System Overview • Batch ALD production system – 5 GEN 2 substrates (370x470 mm) – 52 wafers: 200 mm – 78 wafers: 150 mm – Large objects • Deposition temperature: 85–285 C • Uniformity < 3% 2-sigma (Al2O3) • Small footprint: 700x700 mm • Optimized for low maintenance – stainless steel liner and trap easily exchanged for periodic cleaning – Exchange time approx. 1 hour • Patent pending trap prevents coating inside the pumping line and pump decreasing pumping line and pump maintenance Cambridge NanoTech Inc. Confidential 17
  • 18. Tahiti ALD System Tahiti System Overview • Tahiti Large Surface Area production system – 2 Gen 4.5 substrates – Scalable to accommodate Gen 5 substrates and larger • Uniformity < 5% 3-sigma (Al2O3) • Dual stacked chambers saves cleanroom space • Optimized for low maintenance – Stainless steel liner and trap easily exchanged for periodic cleaning • Patent pending trap prevents coating inside the pumping line and pump decreasing pumping line and pump maintenance • Automation-ready with easy network connectivity and on-board diagnostics. Cambridge NanoTech Inc. Confidential 18
  • 19. Cambridge NanoTech Summary • Cambridge NanoTech is a world leader in ALD technology – World-class ALD scientist led by Dr. Jill Becker, Founder – Leading ALD research with association with Harvard Univ. • Leader in ALD R&D systems with over 150 Savannahs worldwide – Many satisfied customers and references • Developed Phoenix and Fiji ALD systems under contract with CNT customers – Leading Semiconductor manufacturer hired CNT to develop the Phoenix ALD production system – Leading R&D Institute hired CNT to develop the next generation plasma ALD system - Fiji www.cambridgenanotech.com See Website for additional information Cambridge NanoTech Inc. Confidential 19