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Basic Concept of Solar Energy
By: Er. Sarabjeet Singh
What is Solar Energy?
 Originates with the
thermonuclear fusion
reactions occurring in the
sun.
 Represents the entire
electromagnetic radiation
(visible light, infrared,
ultraviolet, x-rays, and radio
waves).
 Radiant energy from the sun
has powered life on Earth for
many millions of years.
Advantages and Disadvantages
 Advantages
 All chemical and radioactive polluting byproducts of the
thermonuclear reactions remain behind on the sun, while only
pure radiant energy reaches the Earth.
 Energy reaching the earth is incredible. By one calculation, 30
days of sunshine striking the Earth have the energy equivalent of
the total of all the planet’s fossil fuels, both used and unused!
 Disadvantages
 Sun does not shine consistently.
 Solar energy is a diffuse source. To harness it, we must
concentrate it into an amount and form that we can use, such as
heat and electricity.
 Addressed by approaching the problem through:
1) collection, 2) conversion, 3) storage.
Solar Energy to Heat Living Spaces
 Proper design of a building is for it to act as a solar
collector and storage unit. This is achieved through
three elements: insulation, collection, and storage.
Solar Energy to Heat Water
 A flat-plate collector is used
to absorb the sun’s energy to
heat the water.
 The water circulates
throughout the closed system
due to convection currents.
 Tanks of hot water are used
as storage.
Photovoltaics
Photo+voltaic = convert light to electricity
Solar Cells Background
 1839 - French physicist A. E. Becquerel first recognized the
photovoltaic effect.
 1883 - first solar cell built, by Charles Fritts, coated
semiconductor selenium with an extremely thin layer of gold
to form the junctions.
 1954 - Bell Laboratories, experimenting with semiconductors,
accidentally found that silicon doped with certain impurities
was very sensitive to light. Daryl Chapin, Calvin Fuller and
Gerald Pearson, invented the first practical device for
converting sunlight into useful electrical power. Resulted in
the production of the first practical solar cells with a sunlight
energy conversion efficiency of around 6%.
 1958 - First spacecraft to use solar panels was US satellite
Vanguard 1
Driven by Space Applications in
Early Days
The heart of a photovoltaic system is a solid-state device called a
solar cell.
How does it work
Energy Band Formation in Solid
 Each isolated atom has discrete energy level, with two electrons of
opposite spin occupying a state.
 When atoms are brought into close contact, these energy levels split.
 If there are a large number of atoms, the discrete energy levels form a
“continuous” band.
Energy Band Diagram of a Conductor,
Semiconductor, and Insulator
a conductor a semiconductor an insulator
 Semiconductor is interest because their conductivity can be readily modulated
(by impurity doping or electrical potential), offering a pathway to control electronic
circuits.
Silicon
-
Si Si Si
Si
SiSi
Si
Si
Si
Shared electrons
 Silicon is group IV element – with 4 electrons in their valence shell.
 When silicon atoms are brought together, each atom forms covalent
bond with 4 silicon atoms in a tetrahedron geometry.
Intrinsic Semiconductor
 At 0 ºK, each electron is in its lowest energy state
so each covalent bond position is filled. If a small
electric field is applied to the material, no electrons
will move because they are bound to their individual
atoms.
=> At 0 ºK, silicon is an insulator.
 As temperature increases, the valence electrons
gain thermal energy. If a valence electron gains
enough energy (Eg), it may break its covalent bond
and move away from its original position. This
electron is free to move within the crystal.
 Conductor Eg <0.1eV, many electrons can be
thermally excited at room temperature.
 Semiconductor Eg ~1eV, a few electrons can be
excited (e.g. 1/billion)
 Insulator, Eg >3-5eV, essentially no electron can
be thermally excited at room temperature.
Extrinsic Semiconductor, n-type Doping
Electron
-
Si Si Si
Si
SiSi
Si
Si
As
Extra
Valence band, Ev
Eg = 1.1 eV
Conducting band, Ec
Ed ~ 0.05 eV
 Doping silicon lattice with group V elements can creates extra electrons
in the conduction band — negative charge carriers (n-type), As- donor.
 Doping concentration #/cm3 (1016/cm3 ~ 1/million).
Valence band, Ev
Eg = 1.1 eV
Conducting band, Ec
Ea ~ 0.05 eV
Electron
-
Si Si Si
Si
SiSi
Si
Si
B
Hole
 Doping silicon with group III elements can creates empty holes in the
conduction band — positive charge carriers (p-type), B-(acceptor).
Extrinsic Semiconductor, p-type doping
V
I
R O F
p n
p n
V>0 V<0
Reverse bias Forward bias
p-n Junction (p-n diode)
 A p-n junction is a junction formed by combining p-type and n-type
semiconductors together in very close contact.
 In p-n junction, the current is only allowed to flow along one direction
from p-type to n-type materials.
i
p n
V<0 V>0
depletion layer
- +
Solar Cells
Light-emitting Diodes
Diode Lasers
Photodetectors
Transistors
p-n Junction (p-n diode)
 A p-n junction is the basic device component for many
functional electronic devices listed above.
How Solar Cells Work
 Photons in sunlight hit the solar panel and are absorbed by semiconducting materials
to create electron hole pairs.
 Electrons (negatively charged) are knocked loose from their atoms, allowing them to
flow through the material to produce electricity.
p n
- +
- +
- +
- +
- +
hv > Eg
The Impact of Band Gap on Efficiency
 Efficiency,  = (VocIscFF)/Pin Voc  Eg, Isc  # of absorbed photons
 Decrease Eg, absorb more of the spectrum
 But not without sacrificing output voltage
hv > Eg
-30
-20
-10
0
10
20
30
CurrentDensity(mA/cm2)
1.00.80.60.40.20.0
Voltage (volts)
Jsc
Voc
FF
Dark
Light
Jmp
Vmp
Fill Factor, FF = (VmpImp)/VocIsc
Efficiency,  = (VocIscFF)/Pin
Cost vs. Efficiency Tradeoff
Efficiency  t1/2
Long d
High t
High Cost
d
Long d
Low t
Lower Cost
d
t decreases as grain size (and cost) decreases
Large Grain
Single
Crystals
Small Grain
and/or
Polycrystalline
Solids
89.6% of 2007 Production
45.2% Single Crystal Si
42.2% Multi-crystal SI
 Limit efficiency 31%
 Single crystal silicon - 16-19%
efficiency
 Multi-crystal silicon - 14-15%
efficiency
 Best efficiency by SunPower Inc 22%
Silicon Cell Average Efficiency
First Generation
– Single Junction Silicon Cells
CdTe 4.7% & CIGS 0.5% of 2007 Production
 New materials and processes to improve efficiency
and reduce cost.
 Thin film cells use about 1% of the expensive
semiconductors compared to First Generation cells.
 CdTe – 8 – 11% efficiency (18% demonstrated)
 CIGS – 7-11% efficiency (20% demonstrated)
Second Generation
– Thin Film Cells
 Enhance poor electrical performance while maintaining very low
production costs.
 Current research is targeting conversion efficiencies of 30-60% while retaining
low cost materials and manufacturing techniques.
 Multi-junction cells – 30% efficiency (40-43% demonstrated)
Third Generation
– Multi-junction Cells
Solar Home Systems
Space
Water
Pumping
Telecom
Main Application Areas – Off-grid
Residential Home
Systems (2-8 kW)
PV Power Plants
( > 100 kW)
Commercial Building
Systems (50 kW)
Main Application Areas
Grid Connected
Future Energy Mix
Top 10 PV Cell Producers
Top 10 produce 53% of world
total
Q-Cells, SolarWorld - Germany
Sharp, Kyocera, Sharp, Sanyo –
Japan
Suntech, Yingli, JA Solar – China
Motech - Taiwan
Future Generation
– Printable Cells
Organic Cell
Nanostructured Cell
Solution Processible Semiconductor
Organic Photovoltaics Convert Sunlight into
Electrical Power.
n
Trans-polyacetylene (t-PA)
S
n
Polythiophene (PT)
N
H
n
Polypyrrole (PPY)
Nanotechnology Solar Cell Design
Interpenetrating Nanostructured Networks
-
metal electrode
transparent electrode
glass
+
- 100 nm
---
metal electrode
transparent electrode
glass
+
- 100 nm
Dye Sensitized Solar Cell
WELCOME IN THE FIELD OF SOLAR ENGINEERING
Have a nice day!
www.ecoepicsolar.in
+91-7006653521

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Basic Concept of Solar Energy

  • 1. Basic Concept of Solar Energy By: Er. Sarabjeet Singh
  • 2. What is Solar Energy?  Originates with the thermonuclear fusion reactions occurring in the sun.  Represents the entire electromagnetic radiation (visible light, infrared, ultraviolet, x-rays, and radio waves).  Radiant energy from the sun has powered life on Earth for many millions of years.
  • 3. Advantages and Disadvantages  Advantages  All chemical and radioactive polluting byproducts of the thermonuclear reactions remain behind on the sun, while only pure radiant energy reaches the Earth.  Energy reaching the earth is incredible. By one calculation, 30 days of sunshine striking the Earth have the energy equivalent of the total of all the planet’s fossil fuels, both used and unused!  Disadvantages  Sun does not shine consistently.  Solar energy is a diffuse source. To harness it, we must concentrate it into an amount and form that we can use, such as heat and electricity.  Addressed by approaching the problem through: 1) collection, 2) conversion, 3) storage.
  • 4. Solar Energy to Heat Living Spaces  Proper design of a building is for it to act as a solar collector and storage unit. This is achieved through three elements: insulation, collection, and storage.
  • 5. Solar Energy to Heat Water  A flat-plate collector is used to absorb the sun’s energy to heat the water.  The water circulates throughout the closed system due to convection currents.  Tanks of hot water are used as storage.
  • 7. Solar Cells Background  1839 - French physicist A. E. Becquerel first recognized the photovoltaic effect.  1883 - first solar cell built, by Charles Fritts, coated semiconductor selenium with an extremely thin layer of gold to form the junctions.  1954 - Bell Laboratories, experimenting with semiconductors, accidentally found that silicon doped with certain impurities was very sensitive to light. Daryl Chapin, Calvin Fuller and Gerald Pearson, invented the first practical device for converting sunlight into useful electrical power. Resulted in the production of the first practical solar cells with a sunlight energy conversion efficiency of around 6%.  1958 - First spacecraft to use solar panels was US satellite Vanguard 1
  • 8. Driven by Space Applications in Early Days
  • 9. The heart of a photovoltaic system is a solid-state device called a solar cell. How does it work
  • 10. Energy Band Formation in Solid  Each isolated atom has discrete energy level, with two electrons of opposite spin occupying a state.  When atoms are brought into close contact, these energy levels split.  If there are a large number of atoms, the discrete energy levels form a “continuous” band.
  • 11. Energy Band Diagram of a Conductor, Semiconductor, and Insulator a conductor a semiconductor an insulator  Semiconductor is interest because their conductivity can be readily modulated (by impurity doping or electrical potential), offering a pathway to control electronic circuits.
  • 12. Silicon - Si Si Si Si SiSi Si Si Si Shared electrons  Silicon is group IV element – with 4 electrons in their valence shell.  When silicon atoms are brought together, each atom forms covalent bond with 4 silicon atoms in a tetrahedron geometry.
  • 13. Intrinsic Semiconductor  At 0 ºK, each electron is in its lowest energy state so each covalent bond position is filled. If a small electric field is applied to the material, no electrons will move because they are bound to their individual atoms. => At 0 ºK, silicon is an insulator.  As temperature increases, the valence electrons gain thermal energy. If a valence electron gains enough energy (Eg), it may break its covalent bond and move away from its original position. This electron is free to move within the crystal.  Conductor Eg <0.1eV, many electrons can be thermally excited at room temperature.  Semiconductor Eg ~1eV, a few electrons can be excited (e.g. 1/billion)  Insulator, Eg >3-5eV, essentially no electron can be thermally excited at room temperature.
  • 14. Extrinsic Semiconductor, n-type Doping Electron - Si Si Si Si SiSi Si Si As Extra Valence band, Ev Eg = 1.1 eV Conducting band, Ec Ed ~ 0.05 eV  Doping silicon lattice with group V elements can creates extra electrons in the conduction band — negative charge carriers (n-type), As- donor.  Doping concentration #/cm3 (1016/cm3 ~ 1/million).
  • 15. Valence band, Ev Eg = 1.1 eV Conducting band, Ec Ea ~ 0.05 eV Electron - Si Si Si Si SiSi Si Si B Hole  Doping silicon with group III elements can creates empty holes in the conduction band — positive charge carriers (p-type), B-(acceptor). Extrinsic Semiconductor, p-type doping
  • 16. V I R O F p n p n V>0 V<0 Reverse bias Forward bias p-n Junction (p-n diode)  A p-n junction is a junction formed by combining p-type and n-type semiconductors together in very close contact.  In p-n junction, the current is only allowed to flow along one direction from p-type to n-type materials. i p n V<0 V>0 depletion layer - +
  • 17. Solar Cells Light-emitting Diodes Diode Lasers Photodetectors Transistors p-n Junction (p-n diode)  A p-n junction is the basic device component for many functional electronic devices listed above.
  • 18. How Solar Cells Work  Photons in sunlight hit the solar panel and are absorbed by semiconducting materials to create electron hole pairs.  Electrons (negatively charged) are knocked loose from their atoms, allowing them to flow through the material to produce electricity. p n - + - + - + - + - + hv > Eg
  • 19. The Impact of Band Gap on Efficiency  Efficiency,  = (VocIscFF)/Pin Voc  Eg, Isc  # of absorbed photons  Decrease Eg, absorb more of the spectrum  But not without sacrificing output voltage hv > Eg -30 -20 -10 0 10 20 30 CurrentDensity(mA/cm2) 1.00.80.60.40.20.0 Voltage (volts) Jsc Voc FF Dark Light Jmp Vmp Fill Factor, FF = (VmpImp)/VocIsc Efficiency,  = (VocIscFF)/Pin
  • 20. Cost vs. Efficiency Tradeoff Efficiency  t1/2 Long d High t High Cost d Long d Low t Lower Cost d t decreases as grain size (and cost) decreases Large Grain Single Crystals Small Grain and/or Polycrystalline Solids
  • 21. 89.6% of 2007 Production 45.2% Single Crystal Si 42.2% Multi-crystal SI  Limit efficiency 31%  Single crystal silicon - 16-19% efficiency  Multi-crystal silicon - 14-15% efficiency  Best efficiency by SunPower Inc 22% Silicon Cell Average Efficiency First Generation – Single Junction Silicon Cells
  • 22. CdTe 4.7% & CIGS 0.5% of 2007 Production  New materials and processes to improve efficiency and reduce cost.  Thin film cells use about 1% of the expensive semiconductors compared to First Generation cells.  CdTe – 8 – 11% efficiency (18% demonstrated)  CIGS – 7-11% efficiency (20% demonstrated) Second Generation – Thin Film Cells
  • 23.  Enhance poor electrical performance while maintaining very low production costs.  Current research is targeting conversion efficiencies of 30-60% while retaining low cost materials and manufacturing techniques.  Multi-junction cells – 30% efficiency (40-43% demonstrated) Third Generation – Multi-junction Cells
  • 24. Solar Home Systems Space Water Pumping Telecom Main Application Areas – Off-grid
  • 25. Residential Home Systems (2-8 kW) PV Power Plants ( > 100 kW) Commercial Building Systems (50 kW) Main Application Areas Grid Connected
  • 27. Top 10 PV Cell Producers Top 10 produce 53% of world total Q-Cells, SolarWorld - Germany Sharp, Kyocera, Sharp, Sanyo – Japan Suntech, Yingli, JA Solar – China Motech - Taiwan
  • 28. Future Generation – Printable Cells Organic Cell Nanostructured Cell Solution Processible Semiconductor
  • 29. Organic Photovoltaics Convert Sunlight into Electrical Power. n Trans-polyacetylene (t-PA) S n Polythiophene (PT) N H n Polypyrrole (PPY)
  • 31. Interpenetrating Nanostructured Networks - metal electrode transparent electrode glass + - 100 nm --- metal electrode transparent electrode glass + - 100 nm
  • 33. WELCOME IN THE FIELD OF SOLAR ENGINEERING Have a nice day! www.ecoepicsolar.in +91-7006653521