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Final m.tech ppt_praveen

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This is my final M.Tech Thesis Presentation. Under this ppt i have discussed my M.Tech thesis work.

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Final m.tech ppt_praveen

  1. 1. Modeling of Silicon Nanowire For Electrical Mobility and Resistance By Praveen Dwivedi M.Tech In VLSI Systems & Technology (V.S.T.) Under the Guidance of Dr. Sitangshu Bhattacharya Assistant Professor Shiv Nadar University Tuesday, May 27, 2014 1 School of Engineering, Department of Electrical Engineering Shiv Nadar University Final Presentation Of M.Tech Thesis
  2. 2. Contents  Introduction of nanoelectronics.  Physics of Nanoelectronics.  My work of M.Tech thesis and Future work.  References. Tuesday, May 27, 2014 2 School of Engineering, Department of Electrical Engineering Shiv Nadar University
  3. 3. 1.Introduction of Nanoelectronics. Nanoelectronics refers to the use of nanotechnology in electronics components. The term covers a diverse set of devices and materials which have the common characteristic that they are very small and the range of this technology lies between 100 nm to 1nm. Tuesday, May 27, 2014 3 School of Engineering, Department of Electrical Engineering Shiv Nadar University
  4. 4. Why we are going beyond CMOS technology or interested in Nanoelectronics Problem in nanoscale MOSFET due to Scaling are given below- 1. Sub threshold leakage current. 2. Hot carrier effects. 3. Direct source to drain tunneling. 4. Direct tunneling , gate leakage current. 5. Parasitic resistance, parasitic capacitance. 6. Reverse –biased junction leakage current. Tuesday, May 27, 2014 4 School of Engineering, Department of Electrical Engineering Shiv Nadar University
  5. 5. Solution for these given problem 1. New materials , new device architectures and new design are possible solution to CMOS scaling issue. 2. Noval device and novel material are considered as promising candidate for beyond technology nodes, including, Planner DG MOSFET, FINFET, vertical DG MOSFET, Trigate MOSFET and gate all around devices. 3. New material Si nanowire, Graphene, carbon nanotube. 4. However which device , material will be final winner for future circuit is still unclear. Tuesday, May 27, 2014 5 School of Engineering, Department of Electrical Engineering Shiv Nadar University
  6. 6. Advantages of Nanodevice 1. These nanodevice take the advantage of quantum mechanical phenomena and ballistic transport characteristics under the lower supply voltage hence low power consumption. 2. These device offered ultra high density integrated electronics due to their extremely small size. Problem- It also increase the defects and variations both during manufacture and chip operations. Tuesday, May 27, 2014 6 School of Engineering, Department of Electrical Engineering Shiv Nadar University
  7. 7. Description of Silicon nanowire according to ITRS [2,3]  Potential Value of Material  Low surface scattering due to one dimensional.  High control of Leakage by Gate.  Key challenges  Nanowires has key challenge to grow in desired location and desired direction.  Nanowires has challenge of catalyst compatible with CMOS processing.  Challenge for dope nanowires channel and source/ drain regions.  Challenge to achieve the high, electron and hole mobility on silicon.  Challenge in pattern surround gate structure . [Source-ITRS] Tuesday, May 27, 2014 7 School of Engineering, Department of Electrical Engineering Shiv Nadar University
  8. 8. Key Factors (advantages) of Silicon Nanowires  Cost -effective bottom-up fabrication  Higher carrier mobility by reduction of scattering due to crystalline structure.  Smooth surface and ability to produce radial and axial nanowires heterostructure.  Better scalability resulting from the fact that diameter of nanowires can be controlled down to below 10nm. [Refe-3] Tuesday, May 27, 2014 8 School of Engineering, Department of Electrical Engineering Shiv Nadar University
  9. 9. Physics of Nanoelectronics  General model of a nanodevice.  The ballistic and Scattering.  My work of M.Tech Thesis and future work. Tuesday, May 27, 2014 9 School of Engineering, Department of Electrical Engineering Shiv Nadar University
  10. 10. General model of a nanodevice by Landauer-Datta Tuesday, May 27, 2014 10 School of Engineering, Department of Electrical Engineering Shiv Nadar University
  11. 11. Filling sate at right and left terminal  Assume each energy channel is independent  At one terminal number of  Filling states from the right contact Tuesday, May 27, 2014 11 0 1 1( ) ( ) ( )N E D E U f E  0 2 2( ) ( ) ( )N E D E U f E  0 2 2 ( )( ) N E NdN E dt    0 1 1 ( )( ) N E NdN E dt    School of Engineering, Department of Electrical Engineering Shiv Nadar University
  12. 12. Steady State Tuesday, May 27, 2014 12 0 1 2 1 2 ( ) 0 N N N NdN E dt               0 0 1 1 2 2 2 21 1 1 1 0N N N N                   1 20 0 1 2 1 2 1 2 1 1 ( ) ( ) ( ) 1 1 1 1 N E N E N E           1 1 h    2 2 h    School of Engineering, Department of Electrical Engineering Shiv Nadar University
  13. 13. Physics Of Nanoelectronics  Where and are a unit of time. While and are unit of energy.  If = electron density is given by  Recall that in equilibrium we use Tuesday, May 27, 2014 13 2 1 1 2 1 2 1 2 ( ) ( ) ( ) ( ) ( ) 2 2 D E D E N E f E f E  1 2 ( ) ( ) ( ) ( ) 2 2 D E D E N f E f E dE        0 0( ) ( )N D E f E dE  School of Engineering, Department of Electrical Engineering Shiv Nadar University
  14. 14. Steady-State Current, I Tuesday, May 27, 2014 14 Contact 1 tries to fill up the device according to its Fermi level Contact 2 tries to fill up the device according to its Fermi level 1 2 0F F  Total flux 1 2I qF qF   Current School of Engineering, Department of Electrical Engineering Shiv Nadar University
  15. 15. Physics Of Nanoelectronics  equa (1) current under this condition  After putting all value in the equation in one then final equation for current is given by  Then genralised term equation of current is given by Tuesday, May 27, 2014 15  1 2( ) 2 q I E F F  0 1 1 ( ) ( ) ( ) N E N E F E   0 2 2 ( ) ( ) ( ) N E N E F E   1 2 2 ( ) ( )( ) 2 q I E D E f f h    1 2 2 ( ) ( ) 2 q D E I f f dE h   School of Engineering, Department of Electrical Engineering Shiv Nadar University
  16. 16. Physics Of Nanoelectronics  Transmission coefficient is given by T(E) is decide the types of transport.  λ=mean free path or Carrier backscattering length.  L=channel length  Diffusive L>>λ then  Ballistic L<<λ then T=1  Quasi Ballistic then T<1. Tuesday, May 27, 2014 16 1 2 1 2 2 ( ) ( ) ( ) 2 2 ( ) ( )( ) q D E I E f f dE h q I T E M E f f dE h        ( ) ( ) ( ) E T E E L     T L   L  School of Engineering, Department of Electrical Engineering Shiv Nadar University
  17. 17. Types of Transport  0.1mm → Drift-diffusion.  10 →Drift –diffusion+ Velocity saturation .  0.1 →Boltzmann for velocity saturation.  10nm →Quasi –ballistic .  1nm → Quantum mechanical. 5/27/2014 17 m m School of Engineering, Department of Electrical Engineering Shiv Nadar University
  18. 18. Conductance and Resistance of Ballistic and Diffusive case  Ballistic conductance is given by  According to relation  After solving above equation then ballistic conductance is given by  Then ballistic resistance is given by 5/27/2014 18 2 02 ( ) ( ) q f G T E M E dEV h E           2 2 ( ) ( )ball q G M E T E h  2 1 12.8 ( ) 2 ball F h K R M E q M    School of Engineering, Department of Electrical Engineering Shiv Nadar University 0 ( )F f E E    
  19. 19. 2D Diffusive resistor 5/27/2014 19 2 02 ( ) ( ) fq G T E M E dE h E           ( ) ( ) ( ) F F E T E E L     ( ) ( ) F ball F E G G E L     1 F Ball E L R R          School of Engineering, Department of Electrical Engineering Shiv Nadar University
  20. 20. Final Equation Tuesday, May 27, 2014 20 2 2 2 2 ( ) ( ) 1 2 ( ) 1 2 y z q G T E M E h h R q T E w w h L q T                ( ) ( ) ( ) E T E E L     School of Engineering, Department of Electrical Engineering Shiv Nadar University 2 mv 
  21. 21. Scattering • Scattering is a general physical process where some forms of radiation, such as light, sound, or moving particles, are forced to deviate from a straight trajectory by one or more paths due to localized non-uniformities in the medium through which they pass. • Scattering may also refer to particle-particle collisions between molecules, atoms, electrons, photons and other particles. Tuesday, May 27, 2014 21 NanoScale Electro thermal Laboratory Department of Electrical Engineering Shiv Nadar University
  22. 22. Tuesday, May 27, 2014 22 School of Engineering, Department of Electrical Engineering Shiv Nadar University
  23. 23. Lattice Scattering • Because much of the scattering in semiconductor is due to lattice vibrations, it is important that we understand their basic properties. If an atom is displaced from its equilibrium position , the bonding forces tend to push it back , so it oscillates about its equilibrium site. Tuesday, May 27, 2014 23 School of Engineering, Department of Electrical Engineering Shiv Nadar University
  24. 24. Tuesday, May 27, 2014 24 School of Engineering, Department of Electrical Engineering Shiv Nadar University
  25. 25. Tuesday, May 27, 2014 25 School of Engineering, Department of Electrical Engineering Shiv Nadar University
  26. 26. Tuesday, May 27, 2014 26 School of Engineering, Department of Electrical Engineering Shiv Nadar University
  27. 27. Tuesday, May 27, 2014 27 School of Engineering, Department of Electrical Engineering Shiv Nadar University
  28. 28. Tuesday, May 27, 2014 28 School of Engineering, Department of Electrical Engineering Shiv Nadar University
  29. 29. Types of Scattering • Intravalley Scattering –This types scattering assume that the initial and final states of electron are within the same valley. • Intervalley scattering - An electron can be scattered from one valley to another one both by acoustic and optical phonons. This scattering process is subdivided into f -type and g-type process .  A process is refereed to as f-type if the initial and final orientation are different otherwise as g-type process. Tuesday, May 27, 2014 29 School of Engineering, Department of Electrical Engineering Shiv Nadar University
  30. 30. g and f- Scattering Tuesday, May 27, 2014 30 School of Engineering, Department of Electrical Engineering Shiv Nadar University
  31. 31. Calculation of Electrical Resistance & Mobility • We address a physics based analytical model of electrical resistance and mobility in an n-silicon nanowire (sinw) under influence of intra and intervalleyscattering (IVS) to detremine Role of First Order Intervalley Scattering in Determining Electrical Resistance of Silicon Nanowire. • Transmission coefficient under the scattering is given by • G= Scattering contribution due to g-type scattering. • F= Scattering contribution due to f-type scattering. • A=Intravalley scattering contribution by acoustic phonons. Tuesday, May 27, 2014 31 1 1 T G F A     2 1 2 y zw w h L q T              2 1 2 ( ) h R q T E  1 2 D L qT n h   School of Engineering, Department of Electrical Engineering Shiv Nadar University
  32. 32. Fig.1 Resistance vs Width Tuesday, May 27, 2014 32 School of Engineering, Department of Electrical Engineering Shiv Nadar University
  33. 33. Fig.2 Resistivity vs Temperature Tuesday, May 27, 2014 33 School of Engineering, Department of Electrical Engineering Shiv Nadar University
  34. 34. Fig.3 Resistance vs length Tuesday, May 27, 2014 34 School of Engineering, Department of Electrical Engineering Shiv Nadar University
  35. 35. Fig. 4 Resistance vs Electric Field Tuesday, May 27, 2014 35 School of Engineering, Department of Electrical Engineering Shiv Nadar University
  36. 36. Fig.5 Resistance vs Temperature Tuesday, May 27, 2014 36 School of Engineering, Department of Electrical Engineering Shiv Nadar University
  37. 37. Mobility Part • In This work we used that given relation for calculating the mobility of silicon nanowire. Mobility for silicon nanowires Where L = length of silicon nanowire. = Carrier density for one dimension material. T = Transmission Coefficient . Tuesday, May 27, 2014 37 1 2 D L qT n h   1Dn School of Engineering, Department of Electrical Engineering Shiv Nadar University
  38. 38. Fig. 1. Variation of mobility over temperature under three different scattering conditions Tuesday, May 27, 2014 38 School of Engineering, Department of Electrical Engineering Shiv Nadar University
  39. 39. Fig. 2 Variation of mobility over length of silicon nanowires under the scattering of intervalley+intravalley, intervalley, intravallley scattering Tuesday, May 27, 2014 39 • . School of Engineering, Department of Electrical Engineering Shiv Nadar University
  40. 40. Fig. 3 Variation of mobility over electric filed under the three scattering Tuesday, May 27, 2014 40 School of Engineering, Department of Electrical Engineering Shiv Nadar University
  41. 41. Conclusion • Scattering is an important phenomenon in a MOSFET which affects the device performance. Mobility strongly dependents on both intervalley and intravalley scattering and increase in a parabolic manner under the variation of gate length. Mobility decreases as the temperature increases and mobility decreases more rapidly under the influence of intravalley scattering under the variation of temperature. • We find that the resistivity in the presence of an external longitudinal electric field is more dominated by f-processes with allowed first order TA and TO interactions which suggests that there are electron repopulation From to the valleys. However for higher cross-sectional dimensions, the resistance starts to weakly Depending on the electric field. Tuesday, May 27, 2014 41 School of Engineering, Department of Electrical Engineering Shiv Nadar University 2 4
  42. 42. Future work • Based on my M.Tech thesis work I am interested in Non equilibrium Green’s Function (NEGF) method to calculate the various electrical parameters of silicon nanowire. Tuesday, May 27, 2014 42 School of Engineering, Department of Electrical Engineering Shiv Nadar University
  43. 43. References 1. Jing Wang, “Device Physics and Simulation of Silicon Nanowire Transistors", Ph.D. dissertation, Purdue University August 2005. 2. Runsheng Wang, Jing Zhuge, Ru Huang, Tao Yu, JibinZou, Dong-Won Kim, Dungun Park, and Yangyuan Wang, “Investigation on Variability in Metal-Gate Si Nanowire MOSFETs: Analysis of Variation Sources and Experimental Characterization” IEEE Transactions On Electron Devices, Vol. 58, No. 8,pp.2317-2318, August 2011. 3. Yong-Bin Kim, “Review Paper: Challenges for Nanoscale MOSFETs and Emerging Nanoelectronics”, Trans. Electr. Electron.Mater.10(1) 21 (2009), G.-D.Hong et al. 4. Huang R, Wu H M, Kang J F, et al. Challenges of 22 nm and beyond CMOS technology. Sci China Ser F- InfSci, 2009, 52(9):1491–1533, doi: 10.1007/s11432-009-0167-9. 5. International Technology Roadmap for Semiconductors 2011 Edition Emerging Research Materials pp. 1- 15. 6. International Technology Roadmap for Semiconductors 2011 Edition Emerging Research Devices pp. 1-16. 7. Yuting Wan, Jian Sha, Bo Chen, Yanjun Fang, Zongli Wang, and Yewu Wang “Nanodevices Based on Silicon Nanowires” Recent Patents on Nanotechnology,pp.1-4,2009 Bentham Science Publishers Ltd. Tuesday, May 27, 2014 43 School of Engineering, Department of Electrical Engineering Shiv Nadar University
  44. 44. References 8. Soshi Sato, “A Study on Electrical Characteristics of Silicon Nanowire Field Effect Transistors” Ph.D. dissertation Tokyo institute of technology, 2008. 9. Allon I. Hochbaum, Renkun Chen, Raul Diaz Delgado, Wenjie Liang, Erik C. Garnett, Mark Najarian3,Arun Majumdar&Peidong Yang “Enhanced thermoelectric performance of rough silicon nanowires”Vol 451| 10 January 2008|,pp.163-167, doi:10.1038/nature06381. 10. Yonatan Calahorra, “Electrical and Mechanical Propertiesof Silicon Nanowires”, Master of Science dissertation, Israel Institute of Technology February 2010 pp. 5-30. 11. “Intel reinvents transistors using new 3-D structure” , Available online. 12. Y. Li, K. Buddharaju, B. C. Tinh, N. Singh, and S. J. Lee, “Improvedvertical silicon nanowire based thermoelectric power generator with polyimide filling”, IEEE Electron Dev. Lett., vol.33, pp. 715-717, (2012). 13. A. K. Buin, A. Verma, A. Svizhenko and M. P. Anantram, “Significant Enhancement of Hole Mobility in [110] Silicon Nanowires, Compared to Electrons and Bulk Silicon”, Nano Lett., vol. 8, pp. 760-765, (2008). 14. E. B. Ramayya, D. Vasileska, S. M. Goodnick and I. Knezevic, “Electron transport in silicon nanowires: The role of acoustic phonon confinement and surface roughness scattering”, J. Appl. Phys., vol. 104, pp. 063711 (1)-(12), (2008). Tuesday, May 27, 2014 44 School of Engineering, Department of Electrical Engineering Shiv Nadar University
  45. 45. References 15. D. Yu, Y. Zhang and F. Liu, “First-principles study of electronic properties of biaxially strained silicon: Effects on charge carrier mobility”, Phys. Rev. B, vol. 78, pp. 245204 (1)-(8), (2008). 16. M. Frey, A. Esposito and A. Schenk, “Computational comparison of conductivity and mobility models for silicon nanowire devices”, J Appl. Phys., vol. 109, pp. 083707(1)-(6), (2011). 17. S. Jin, Y. J. Park and H. S. Min, “A three-dimensional simulation of quantum transport in silicon nanowire transistor in the presence of electron-phonon interactions”, J. Appl. Phys.,vol. 99, 123719 (1)-(10), (2006). 18. A. I. Hochbaum, R. Chen, R. D. Delgado, W. Liang, E. C. Garnett, M. Najarian, A. Majumdar and P. Yang, “Enhanced thermoelectric performance of rough silicon nanowires”, Nature Lett., vol. 451, pp. 163- 167,(2007). Tuesday, May 27, 2014 45 School of Engineering, Department of Electrical Engineering Shiv Nadar University
  46. 46. Credit for M.Tech Degree • First Credit to Shiv Nadar University. • Major Credit to Sitangshu Sir and his motivation for Ph.D. • Third Credit to My all Faculty and All friends. Tuesday, May 27, 2014 46 School of Engineering, Department of Electrical Engineering Shiv Nadar University
  47. 47. Tuesday, May 27, 2014 47 School of Engineering, Department of Electrical Engineering Shiv Nadar University
  48. 48. Tuesday, May 27, 2014 48 School of Engineering, Department of Electrical Engineering Shiv Nadar University
  49. 49. Tuesday, May 27, 2014 49 School of Engineering, Department of Electrical Engineering Shiv Nadar University
  50. 50. Tuesday, May 27, 2014 50 School of Engineering, Department of Electrical Engineering Shiv Nadar University
  51. 51. Tuesday, May 27, 2014 NanoScale Electro thermal Laboratory Department of Electrical Engineering Shiv Nadar University 51
  52. 52. Tuesday, May 27, 2014 NanoScale Electro thermal Laboratory Department of Electrical Engineering Shiv Nadar University 52
  53. 53. Part I • We determining the mobility of silicon nanowires under the influence of intra & intervalley scattering has been presented. The relationship of Landauer transmission coefficient with scattering process has been derived. This transmission coefficient has been used to determine the mobility of silicon nanowires. The effect of longitudinal electric field, temperature and length of silicon nanowire on the mobility of silicon nanowires has been shown. This study has been done under the influence of intra+intervalley, intervalley and intravalley scattering. The core aim of this paper is to show the affects of scattering on the mobility of silicon nanowire. Tuesday, May 27, 2014 53 NanoScale Electro thermal Laboratory Department of Electrical Engineering Shiv Nadar University
  54. 54. Tuesday, May 27, 2014 54 NanoScale Electro thermal Laboratory Department of Electrical Engineering Shiv Nadar University
  55. 55. My Work for 4th Semester • In Part 1 We Calculated the mobility of silicon nanowires under the influence of intra & intervalley scattering has been presented. • In part 2 we Calculated the current for [100] Oriented silicon Nanowire by Non equilibrium Green’s Function (NEGF) and Atomistix ToolKit (ATK). Tuesday, May 27, 2014 55 NanoScale Electro thermal Laboratory Department of Electrical Engineering Shiv Nadar University
  56. 56. Tuesday, May 27, 2014 56 School of Engineering, Department of Electrical Engineering Shiv Nadar University
  57. 57. Tuesday, May 27, 2014 NanoScale Electro thermal Laboratory Department of Electrical Engineering Shiv Nadar University 57
  58. 58. Tuesday, May 27, 2014 NanoScale Electro thermal Laboratory Department of Electrical Engineering Shiv Nadar University 58
  59. 59. Tuesday, May 27, 2014 NanoScale Electro thermal Laboratory Department of Electrical Engineering Shiv Nadar University 59
  60. 60. Part II • Under this work we calculated the Electrical current [100] Oriented Silicon Nanowire by the Non-equilibrium Green’s Function Method (NEGF) and Atomistix Tool Kit(ATK). Tuesday, May 27, 2014 60 NanoScale Electro thermal Laboratory Department of Electrical Engineering Shiv Nadar University
  61. 61. What is NEGF • Non equilibrium Green function method which being widely used in the analysis and design of nanoscale device it provide a unified description for all kind of device from molecular to carbon nanotube to silicon nanowire transistor in term of the Hamiltonian describing the energy level of channel, the self energy describing the connection to the contact and describing the interaction inside the channel. • The NEFG formalism provides a sound conceptual basis for the development Of quantitative model for quantum transport . Tuesday, May 27, 2014 61 NanoScale Electro thermal Laboratory Department of Electrical Engineering Shiv Nadar University
  62. 62. Motivation  Calculation of current in nanoscale devices  Scale too small to apply drift-diffusion  Current is a non-equilibrium quantity  Schrodinger-Poisson only applicable in equilibrium  Need a method which can handle: 1. Non-equilibrium conditions 2. Scattering mechanisms 3. 2D/3D and approximate many-body problems Tuesday, May 27, 2014 62 NanoScale Electro thermal Laboratory Department of Electrical Engineering Shiv Nadar University
  63. 63. What are our options :  Self-consistent quantum drift-diffusion model (complicated)  Monte Carlo methods (expensive)  Non-equilibrium Green's function formalism (this is option) Tuesday, May 27, 2014 63 NanoScale Electro thermal Laboratory Department of Electrical Engineering Shiv Nadar University
  64. 64. Advantages of Non-Equilibrium Green’s Function Method : Incorporation of quantum interference effects such as tunnelling and diffraction, not possible through the Boltzmann equation.  Mathematically accurate approach to include rigorous scattering (electron-phonon scattering, surface scattering etc).  Eliminates periodic boundary conditions as outgoing waves are planar.  Multiscale formulation: Can be used to solve atomistic systems to mesoscopic systems. Tuesday, May 27, 2014 64 NanoScale Electro thermal Laboratory Department of Electrical Engineering Shiv Nadar University
  65. 65. Nonequilibrium Green’s Function Method : Tuesday, May 27, 2014 65 NanoScale Electro thermal Laboratory Department of Electrical Engineering Shiv Nadar University
  66. 66. Tuesday, May 27, 2014 66 NanoScale Electro thermal Laboratory Department of Electrical Engineering Shiv Nadar University
  67. 67. Tuesday, May 27, 2014 67 NanoScale Electro thermal Laboratory Department of Electrical Engineering Shiv Nadar University
  68. 68. Tuesday, May 27, 2014 68 NanoScale Electro thermal Laboratory Department of Electrical Engineering Shiv Nadar University
  69. 69. Tuesday, May 27, 2014 69 NanoScale Electro thermal Laboratory Department of Electrical Engineering Shiv Nadar University
  70. 70. Tuesday, May 27, 2014 70 NanoScale Electro thermal Laboratory Department of Electrical Engineering Shiv Nadar University
  71. 71. Tuesday, May 27, 2014 71 NanoScale Electro thermal Laboratory Department of Electrical Engineering Shiv Nadar University
  72. 72. Tuesday, May 27, 2014 72 NanoScale Electro thermal Laboratory Department of Electrical Engineering Shiv Nadar University
  73. 73. Fig.1 Current vs Voltage Tuesday, May 27, 2014 73 NanoScale Electro thermal Laboratory Department of Electrical Engineering Shiv Nadar University
  74. 74. Fig.2 Resistance vs Voltage Tuesday, May 27, 2014 74 NanoScale Electro thermal Laboratory Department of Electrical Engineering Shiv Nadar University
  75. 75. Fig3. Conductance vs Voltage Tuesday, May 27, 2014 75 NanoScale Electro thermal Laboratory Department of Electrical Engineering Shiv Nadar University
  76. 76. Reference 1. NANOSCALE TRANSISTORS Device Physics, Modeling and Simulation by Mark Lundstrom & Jing Guo. 2. International technology roadmap for semiconductors 2011 edition emerging research devices. 3. International technology roadmap for semiconductors 2011 edition emerging research materials. 4. Review Paper: Challenges for Nanoscale MOSFETs and Emerging Nanoelectronics by gone-Bin Kim. Tuesday, May 27, 2014 76 NanoScale Electro thermal Laboratory Department of Electrical Engineering Shiv Nadar University
  77. 77. Tuesday, May 27, 2014 NanoScale Electro thermal Laboratory Department of Electrical Engineering Shiv Nadar University 77
  78. 78. My Result • Thank You Tuesday, May 27, 2014 78 NanoScale Electro thermal Laboratory Department of Electrical Engineering Shiv Nadar University
  79. 79. Content • Introduction • Solving the Wave Equation • Computing n(x) • Computing ID • NEGF Formulation • Scattering • Summary Tuesday, May 27, 2014 79 NanoScale Electro thermal Laboratory Department of Electrical Engineering Shiv Nadar University
  80. 80. Tuesday, May 27, 2014 NanoScale Electro thermal Laboratory Department of Electrical Engineering Shiv Nadar University 80 2 2 2 2 ( ) ( ) 1 2 ( ) 1 2 y z q G T E M E h h R q T E w w h L q T               
  81. 81. Proposed work for next Semester • My proposed work for next semester will be determine the electrical current in an n-silicon nanowire (sinw) under influence of intra and intervalleyscattering (IVS). • Current in linear region • Current under saturation region Tuesday, May 27, 2014 81 ( ) 2 T D el ox GS T DS B L v I T WC V V V k T q         ( ) 2 el D ox T GS T el T I WC v V V T        NanoScale Electro thermal Laboratory Department of Electrical Engineering Shiv Nadar University
  82. 82. • Transmission coefficient under the scattering is given by • G= Scattering contribution due to g-type scattering. • F= Scattering contribution due to f-type scattering. • A=Intravalley scattering by acoustic phonons. Tuesday, May 27, 2014 NanoScale Electro thermal Laboratory Department of Electrical Engineering Shiv Nadar University 82 1 1 T G F A     2 1 2 y zw w h L q T              2 1 2 ( ) h R q T E 

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