I-V characteristics of highly doped p-i-n diode

1. I-V characteristics of
highly-doped p-i-n diode
The 14th International Conference on QiR (Quality in Research), 2015
A.A.N.G. Sapteka1, a, H.N. Tan2, R. Unno2, D. Moraru2,
A. Udhiarto1, S. Purwiyanti1, D. Hartanto1, H. Sudibyo1,
M. Tabe2
1Electrical Engineering, Universitas Indonesia, Depok, Indonesia.
2Reseach Institute of Electronics, Shizuoka University, Hamamatsu, Japan.
aanak.agung15@ui.ac.id

2. Outline
• Introduction
• Methods
• Result and Discussion
• Conclusion
• Acknowledgment
The 14th International Conference on QiR (Quality in Research), 2015

3. Outline
• Introduction
• Methods
• Result and Discussion
• Conclusion
• Acknowledgment
The 14th International Conference on QiR (Quality in Research), 2015

4. Introduction
The 14th International Conference on QiR (Quality in Research), 2015
• Design, Fabrication and Characterization of p-i-
pn diode within ultrathin SOI structure.
• Doping concentration for Boron and Phosphorus
are 1×1020 cm-3 and 2×1020 cm-3, respectively,
achieved by short-time (5 minutes) drive-in
process in N2 atmosphere at 950 oC.

5. Methods
The 14th International Conference on QiR (Quality in Research), 2015
Fig. 1. P-I-N diode using SOI structure

6. Methods
The 14th International Conference on QiR (Quality in Research), 2015

7. Methods
The 14th International Conference on QiR (Quality in Research), 2015
Fig. 3. I-V device measurement using a high-vacuum variable temperature
prober station.

8. Outline
• Introduction
• Methods
• Result and Discussion
• Conclusion
• Acknowledgment
The 14th International Conference on QiR (Quality in Research), 2015

9. Result and Discussion
Table 1. Result of Phosphorus Doping Concentration
Doping Temperature [oC]
880 900 950
Concentration [cm-3] 7×1019 8×1019 1×1020
The 14th International Conference on QiR (Quality in Research), 2015

10. Result and Discussion
Table 2. Result of Boron Doping Concentration
Doping Temperature [oC]
880 900 950
Concentration [cm-3] 5×1019 8×1019 2×1020
The 14th International Conference on QiR (Quality in Research), 2015

11. Result and Discussion
Fig. 4. Fabrication steps of highly-doped nanoscale p-i-n diodes.
(1) L=200 nm and W=680 nm
(2) L=200 nm and W=850 nm
(3) L=700 nm and W=660 nm
(4) L=700 nm and W=680 nm
(5) L=700 nm and W=720 nm
P-I-N diodes:
The 14th International Conference on QiR (Quality in Research), 2015

12. Result and Discussion
According to Sze (2007), effective carrier lifetime before
recombination in semiconductors,
𝜏eff = (2 Arn2 + (1/(tp0 + tn0)))-1 (1)
where:
Ar (Auger coefficient) = 1~2 × 10-31 cm6/s
n ≈ ND
tp0 = hole lifetime at 300 K
tn0 = electron lifetime at 300 K
The 14th International Conference on QiR (Quality in Research), 2015

13. Result and Discussion
As suggested by Zheng et.al. (2008), it is reasonable to
assume tn0=tp0=100 μs.
Thus, for Eq. (1), we have 𝜏eff≈ 3.33 × 10-10 s.
The current density can be then expressed as:
J = (qnL)/(𝜏 eff) (2)
Using equation (2),
for diodes with i layer of L=200 nm, we obtain a current
density of J ≈ 9.60×105 A/cm2, while for diodes with i layer
of L=700 nm, we obtain current density J ≈ 3.36×106 A/cm2 .
The 14th International Conference on QiR (Quality in Research), 2015

14. Result and Discussion
The 14th International Conference on QiR (Quality in Research), 2015

15. Outline
• Introduction
• Methods
• Result and Discussion
• Conclusion
• Acknowledgment
The 14th International Conference on QiR (Quality in Research), 2015

16. Conclusion
• High-concentration doping (≈1020 cm-3) of
nanoscale p-i-n diodes has been achieved and
fabricated using such processes in this work
as a preliminary stage.
• From I-V characteristics of p-i-n diodes at
room temperature, we suggest that longer i-
layer will produce higher current in forward
bias.
The 14th International Conference on QiR (Quality in Research), 2015

17. Outline
• Introduction
• Methods
• Result and Discussion
• Conclusion
• Acknowledgment
The 14th International Conference on QiR (Quality in Research), 2015

18. Acknowledgment
We would like to thank to PKPI / Sandwich-like
Programme 2014 of The Directorate General
of Higher Education, Ministry of Education
and Culture, Republic of Indonesia.
The 14th International Conference on QiR (Quality in Research), 2015

19. Thank You
The 14th International Conference on QiR (Quality in Research), 2015