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Presentation B Engproject

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Parvesh Deosarran
Parvesh Deosarran
TecnologíaEmpresariales
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Electrical Characterization of ICP deposited SiO 2 Oxide integrity and Interface investigation Parvesh BEng project
 Contents ,[object Object],[object Object],[object Object],[object Object],[object Object]
 High µ Fe ~ 600 cm 2 /Vs, Low S ~ 0.20 V/dec., Low I OFF ~ 10 -13 A Single grain Si TFTs T ≈ 350 °C GF D S
Polymer Substrate the Future ? ,[object Object],[object Object],Can high performance TFTs be processed at low temperatures ? 260 °C PES 150 °C PC 80 °C PET
Objectives of this research (HFQS C-V) (I-V) ,[object Object],[object Object],[object Object],Aim: Obtain good gate oxide equivalent to thermal oxide at low process temperatures. E bd ε ρ D it I-V HFQS C-V
Solution: ICP (Inductive Coupled Plasma) ,[object Object],[object Object],[object Object],[object Object]
Ideal Capacitance-Voltage Theory ,[object Object],[object Object],[object Object],[object Object],C-V Characteristic
The (non) ideal frequency dependence C-V ,[object Object],[object Object]
The result and equivalent circuits High Frequency and Quasi Static C-V characteristics D it = C it /q A Equivalent circuits
Experimental details Reference = Thermal oxide 100 149 4 260 6 100 132 2.2 260 5 100 122 2.2 80 3 100 132 2.2 260 2 100 122 2.2 80 1 Th (nm) t (s) p (Pa) T ( °C ) Wafernr. Various deposition conditions ,[object Object],[object Object],[object Object],Rf power = 500 W; Gas flow Ar. = 140 sccm, SiH 4 /He (5%): 150 sccm and O 2 = 9.2 sccm. Sample 5 was exposed to oxygen plasma before deposition.
Experimental details ,[object Object],[object Object]
C-V Results Process conditions: T = 260 °C, p = 4 Pa
D it D it vs V AG for sample 6. D it around 1.3 V is 2.8 ×10 10 eV -1 cm -2 Thermal ox yielded D it of 1.7 × 10 10 eV -1 cm -2
Details from C-V characteristics Assumed for thermal ox. ε = 3.9, calculated C ox = 258 pF, within 10 % range of measured C ox ,[object Object],[object Object],[object Object],100 3.88 220 2.8 × 10 10 6 100 - 280 1.7 × 10 10 Thermal ox 100 - 210 1.3 × 10 11 5 100 - 220 1.0 × 10 11 3 100 - 215 2.6 × 10 11 2 100 - 230 7.2 × 10 10 1 Th (nm) ε (-) C ox (pF) Dit (eV -1 cm -2 ) Wafernr.
J vs E characteristics Sample 6 has an E bd of 8.6 × 10 6 V/cm
Summary from J vs E characteristics Sample 6 has the highest resistivity and breakdown field strength, which may again be attributed to high pressure. 8.6 × 10 6 1.1 × 10 18 6 8.1 × 10 6 8.7 × 10 17 Thermal ox 1.6 × 10 6 4.0 × 10 17 5 4.7 × 10 6 1.7 × 10 17 3 8.5 × 10 6 4.4 × 10 17 2 8.2 × 10 6 6.4 × 10 17 1 E bd (V/cm) Resistivity( ρ ) (Ω cm ) Wafernr.
Conclusions ,[object Object],[object Object],[object Object],[object Object],[object Object]

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Presentation B Engproject

  • 1. Electrical Characterization of ICP deposited SiO 2 Oxide integrity and Interface investigation Parvesh BEng project
  • 2.
  • 3. High µ Fe ~ 600 cm 2 /Vs, Low S ~ 0.20 V/dec., Low I OFF ~ 10 -13 A Single grain Si TFTs T ≈ 350 °C GF D S
  • 4.
  • 5.
  • 6.
  • 7.
  • 8.
  • 9. The result and equivalent circuits High Frequency and Quasi Static C-V characteristics D it = C it /q A Equivalent circuits
  • 10.
  • 11.
  • 12. C-V Results Process conditions: T = 260 °C, p = 4 Pa
  • 13. D it D it vs V AG for sample 6. D it around 1.3 V is 2.8 ×10 10 eV -1 cm -2 Thermal ox yielded D it of 1.7 × 10 10 eV -1 cm -2
  • 14.
  • 15. J vs E characteristics Sample 6 has an E bd of 8.6 × 10 6 V/cm
  • 16. Summary from J vs E characteristics Sample 6 has the highest resistivity and breakdown field strength, which may again be attributed to high pressure. 8.6 × 10 6 1.1 × 10 18 6 8.1 × 10 6 8.7 × 10 17 Thermal ox 1.6 × 10 6 4.0 × 10 17 5 4.7 × 10 6 1.7 × 10 17 3 8.5 × 10 6 4.4 × 10 17 2 8.2 × 10 6 6.4 × 10 17 1 E bd (V/cm) Resistivity( ρ ) (Ω cm ) Wafernr.
  • 17.