SPICE MODEL of 1MBH05D-060 (Professional+FWDS Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: Insulated Gate Bipolar Transistor (IGBT)
PART NUMBER: 1MBH05D-060
MANUFACTURER: Fuji Electric
*REMARK: Free-Wheeling Diode (Standard Model)
Bee Technologies Inc.
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009

2. Transfer Characteristics
Circuit Simulation result
10A
8A
6A
4A
2A
0A
0V 4V 8V 12V 16V 20V
I(U1:C)
V_VGE
Evaluation circuit
U1 D1
1MBH05D-060 D1MBH05D-060
VCE
5Vdc
VGE
15Vdc
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009

3. Comparison Graph
Simulation result
Comparison table
Test condition: VCE =5 (V)
VGE (V)
IC (A) %Error
Measurement Simulation
0.000 8.000 7.800 -2.50
2.800 10.000 9.939 -0.61
9.700 12.000 12.068 0.57
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009

4. Fall Time Characteristics
Circuit Simulation result
5.0A
4.0A
3.0A
2.0A
1.0A
0A
2.0us 2.8us 3.6us 4.4us 5.2us 6.0us
I(RL)
Time
Evaluation circuit
RL
Rg U1 D1 59.6
1MBH05D-060 D1MBH05D-060
V1 = -15
V2 = 15 330
TD = 0 V1
TR = 10n VCE
TF = 10n 300Vdc
PW = 3u
PER = 20u
0
Test condition: IC=5 (A), VCC=300 (V)
Parameter Unit Measurement Simulation %Error
tf us 0.180 0.181 0.527
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009

5. Gate Charge Characteristics
Circuit Simulation result
25V
20V
15V
10V
5V
0V
0 10n 20n 30n
V(W1:1)
Time*1mA
Evaluation circuit
V2
0
U1 D3 I1
1MBH05D-060 D2
D1MBH05D-060
Dbreak 5
I1 = 0 W1
I2 = 1m +
TF = 10n V3
TR = 10n -
TD = 0 I2 W
PER = 500m IOFF = 100uA 300
PW = 5m ION = 0A
0
Test condition: VCC=300 (V), IC=5 (A), VGE=15 (V)
Parameter Unit Measurement Simulation %Error
Qge nc 3.500 3.516 0.446
Qgc nc 8.000 7.995 -0.065
Qg nc 17.500 17.312 -1.074
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009

6. Saturation Characteristics
Circuit Simulation result
10A
8A
6A
4A
2A
0A
0V 0.5V 1.0V 1.5V 2.0V 2.5V 3.0V 3.5V 4.0V
I(IC)
V(IC:-)
Evaluation circuit
U1 D1
1MBH05D-060 D1MBH05D-060
IC
0Adc
VGE
15Vdc
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009

7. Comparison Graph
Simulation result
Comparison table
Test condition: VGE =15 (V)
VCE (V)
Ic(A) %Error
Measurement Simulation
2.5 1.950 2.000 2.55
5.0 2.400 2.399 -0.03
10.0 3.200 3.199 -0.04
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009

8. Output Characteristics
Circuit Simulation result
10A
VGE=20V 15V 12V
8A
6A
4A
10V
2A
0A
8V
0V 1.0V 2.0V 3.0V 4.0V 5.0V
I(U1:C)
V_VCE
Evaluation circuit
U1 D1 VCE
1MBH05D-060 4Vdc
D1MBH05D-060
15Vdc VGE
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009

9. FWD Forward Current Characteristics
Circuit Simulation result
10A
8A
6A
4A
2A
0A
0V 0.5V 1.0V 1.5V 2.0V 2.5V 3.0V 3.5V 4.0V
I(Vsense)
V(EC)
Evaluation circuit
Vsense
EC
V1
0Vdc
V2 D1 0Vdc
D1MBH05D-060
U1
1MBH05D-060
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009

10. Comparison Graph
Simulation result
Comparison table
VF (V)
IF(A) %Error
Measurement Simulation
0.2 1.200 1.232 2.65
2 1.700 1.713 0.74
4 2.050 2.006 -2.16
6 2.300 2.262 -1.66
8 2.500 2.503 0.11
10 2.700 2.735 1.30
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009

11. Reverse Recovery Characteristics
Circuit Simulation result
6.0A
5.0A
4.0A
3.0A
2.0A
1.0A
0A
-1.0A
-2.0A
-3.0A
4.92us 4.96us 5.00us 5.04us 5.08us 5.12us 5.16us 5.20us 5.24us 5.28us
I(FWD)
Time
Evaluation circuit
L2
1 2
1.6uH
U2 D2
1MBH05D-060 D1MBH05D-060
IC = 5
1500uH
FWD 2 1
C L1 VCE
200
Rg U1 D1
1MBH05D-060 D1MBH05D-060
V1 = -15
V2 = 15 100
TD = 5u V1
TR = 10n
TF = 10n
PW = 4.998u
PER = 100u
0
Test condition: VCC=300 (V), IC=5 (A), -di/dt=100A/usec
Parameter Unit Measurement Simulation %Error
trr nsec 61.000 27.595 -54.76
Irr A 2.200 2.188 -0.55
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009