SPICE MODEL of 1MBH05D-060 (Professional+FWDS Model) in SPICE PARK

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SPICE MODEL of 1MBH05D-060 (Professional+FWDS Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

Tecnología

Device Modeling Report

COMPONENTS: Insulated Gate Bipolar Transistor (IGBT)
PART NUMBER: 1MBH05D-060
MANUFACTURER: Fuji Electric
*REMARK: Free-Wheeling Diode (Standard Model)

Bee Technologies Inc.

All Rights Reserved Copyright (C) Bee Technologies Inc. 2009

Transfer Characteristics

Circuit Simulation result

10A

8A

6A

4A

2A

0A
0V 4V 8V 12V 16V 20V
I(U1:C)
V_VGE

Evaluation circuit

U1 D1
1MBH05D-060 D1MBH05D-060
VCE
5Vdc
VGE
15Vdc

0

All Rights Reserved Copyright (C) Bee Technologies Inc. 2009

Comparison Graph

Simulation result

Comparison table

Test condition: VCE =5 (V)

VGE (V)
IC (A) %Error
Measurement Simulation
0.000 8.000 7.800 -2.50
2.800 10.000 9.939 -0.61
9.700 12.000 12.068 0.57

All Rights Reserved Copyright (C) Bee Technologies Inc. 2009

Fall Time Characteristics

Circuit Simulation result

5.0A

4.0A

3.0A

2.0A

1.0A

0A
2.0us 2.8us 3.6us 4.4us 5.2us 6.0us
I(RL)
Time

Evaluation circuit

RL
Rg U1 D1 59.6
1MBH05D-060 D1MBH05D-060
V1 = -15
V2 = 15 330
TD = 0 V1
TR = 10n VCE
TF = 10n 300Vdc
PW = 3u
PER = 20u

0

Test condition: IC=5 (A), VCC=300 (V)

Parameter Unit Measurement Simulation %Error
tf us 0.180 0.181 0.527

All Rights Reserved Copyright (C) Bee Technologies Inc. 2009

Gate Charge Characteristics

Circuit Simulation result

25V

20V

15V

10V

5V

0V
0 10n 20n 30n
V(W1:1)
Time*1mA

Evaluation circuit

V2

0

U1 D3 I1
1MBH05D-060 D2
D1MBH05D-060
Dbreak 5

I1 = 0 W1
I2 = 1m +
TF = 10n V3
TR = 10n -
TD = 0 I2 W
PER = 500m IOFF = 100uA 300
PW = 5m ION = 0A

0

Test condition: VCC=300 (V), IC=5 (A), VGE=15 (V)

Parameter Unit Measurement Simulation %Error
Qge nc 3.500 3.516 0.446
Qgc nc 8.000 7.995 -0.065
Qg nc 17.500 17.312 -1.074

All Rights Reserved Copyright (C) Bee Technologies Inc. 2009

Saturation Characteristics

Circuit Simulation result

10A

8A

6A

4A

2A

0A
0V 0.5V 1.0V 1.5V 2.0V 2.5V 3.0V 3.5V 4.0V
I(IC)
V(IC:-)

Evaluation circuit

U1 D1
1MBH05D-060 D1MBH05D-060
IC
0Adc
VGE
15Vdc

0

All Rights Reserved Copyright (C) Bee Technologies Inc. 2009

Comparison Graph

Simulation result

Comparison table

Test condition: VGE =15 (V)

VCE (V)
Ic(A) %Error
Measurement Simulation
2.5 1.950 2.000 2.55
5.0 2.400 2.399 -0.03
10.0 3.200 3.199 -0.04

All Rights Reserved Copyright (C) Bee Technologies Inc. 2009

Output Characteristics

Circuit Simulation result

10A

VGE=20V 15V 12V
8A

6A

4A
10V

2A

0A
8V
0V 1.0V 2.0V 3.0V 4.0V 5.0V
I(U1:C)
V_VCE

Evaluation circuit

U1 D1 VCE
1MBH05D-060 4Vdc
D1MBH05D-060

15Vdc VGE

0

All Rights Reserved Copyright (C) Bee Technologies Inc. 2009

FWD Forward Current Characteristics

Circuit Simulation result

10A

8A

6A

4A

2A

0A
0V 0.5V 1.0V 1.5V 2.0V 2.5V 3.0V 3.5V 4.0V
I(Vsense)
V(EC)

Evaluation circuit

Vsense
EC
V1
0Vdc

V2 D1 0Vdc
D1MBH05D-060
U1
1MBH05D-060

0

All Rights Reserved Copyright (C) Bee Technologies Inc. 2009

Comparison Graph

Simulation result

Comparison table

VF (V)
IF(A) %Error
Measurement Simulation
0.2 1.200 1.232 2.65
2 1.700 1.713 0.74
4 2.050 2.006 -2.16
6 2.300 2.262 -1.66
8 2.500 2.503 0.11
10 2.700 2.735 1.30

All Rights Reserved Copyright (C) Bee Technologies Inc. 2009

Reverse Recovery Characteristics

Circuit Simulation result

6.0A

5.0A

4.0A

3.0A

2.0A

1.0A

0A

-1.0A

-2.0A

-3.0A
4.92us 4.96us 5.00us 5.04us 5.08us 5.12us 5.16us 5.20us 5.24us 5.28us
I(FWD)
Time

Evaluation circuit

L2
1 2
1.6uH
U2 D2
1MBH05D-060 D1MBH05D-060

IC = 5
1500uH
FWD 2 1
C L1 VCE
200

Rg U1 D1
1MBH05D-060 D1MBH05D-060
V1 = -15
V2 = 15 100
TD = 5u V1
TR = 10n
TF = 10n
PW = 4.998u
PER = 100u

0

Test condition: VCC=300 (V), IC=5 (A), -di/dt=100A/usec

Parameter Unit Measurement Simulation %Error
trr nsec 61.000 27.595 -54.76
Irr A 2.200 2.188 -0.55

All Rights Reserved Copyright (C) Bee Technologies Inc. 2009

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SPICE MODEL of 1MBH05D-060 (Professional+FWDS Model) in SPICE PARK

1. Device Modeling Report COMPONENTS: Insulated Gate Bipolar Transistor (IGBT) PART NUMBER: 1MBH05D-060 MANUFACTURER: Fuji Electric *REMARK: Free-Wheeling Diode (Standard Model) Bee Technologies Inc. All Rights Reserved Copyright (C) Bee Technologies Inc. 2009

2. Transfer Characteristics Circuit Simulation result 10A 8A 6A 4A 2A 0A 0V 4V 8V 12V 16V 20V I(U1:C) V_VGE Evaluation circuit U1 D1 1MBH05D-060 D1MBH05D-060 VCE 5Vdc VGE 15Vdc 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009

3. Comparison Graph Simulation result Comparison table Test condition: VCE =5 (V) VGE (V) IC (A) %Error Measurement Simulation 0.000 8.000 7.800 -2.50 2.800 10.000 9.939 -0.61 9.700 12.000 12.068 0.57 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009

4. Fall Time Characteristics Circuit Simulation result 5.0A 4.0A 3.0A 2.0A 1.0A 0A 2.0us 2.8us 3.6us 4.4us 5.2us 6.0us I(RL) Time Evaluation circuit RL Rg U1 D1 59.6 1MBH05D-060 D1MBH05D-060 V1 = -15 V2 = 15 330 TD = 0 V1 TR = 10n VCE TF = 10n 300Vdc PW = 3u PER = 20u 0 Test condition: IC=5 (A), VCC=300 (V) Parameter Unit Measurement Simulation %Error tf us 0.180 0.181 0.527 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009

5. Gate Charge Characteristics Circuit Simulation result 25V 20V 15V 10V 5V 0V 0 10n 20n 30n V(W1:1) Time*1mA Evaluation circuit V2 0 U1 D3 I1 1MBH05D-060 D2 D1MBH05D-060 Dbreak 5 I1 = 0 W1 I2 = 1m + TF = 10n V3 TR = 10n - TD = 0 I2 W PER = 500m IOFF = 100uA 300 PW = 5m ION = 0A 0 Test condition: VCC=300 (V), IC=5 (A), VGE=15 (V) Parameter Unit Measurement Simulation %Error Qge nc 3.500 3.516 0.446 Qgc nc 8.000 7.995 -0.065 Qg nc 17.500 17.312 -1.074 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009

6. Saturation Characteristics Circuit Simulation result 10A 8A 6A 4A 2A 0A 0V 0.5V 1.0V 1.5V 2.0V 2.5V 3.0V 3.5V 4.0V I(IC) V(IC:-) Evaluation circuit U1 D1 1MBH05D-060 D1MBH05D-060 IC 0Adc VGE 15Vdc 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009

7. Comparison Graph Simulation result Comparison table Test condition: VGE =15 (V) VCE (V) Ic(A) %Error Measurement Simulation 2.5 1.950 2.000 2.55 5.0 2.400 2.399 -0.03 10.0 3.200 3.199 -0.04 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009

8. Output Characteristics Circuit Simulation result 10A VGE=20V 15V 12V 8A 6A 4A 10V 2A 0A 8V 0V 1.0V 2.0V 3.0V 4.0V 5.0V I(U1:C) V_VCE Evaluation circuit U1 D1 VCE 1MBH05D-060 4Vdc D1MBH05D-060 15Vdc VGE 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009

9. FWD Forward Current Characteristics Circuit Simulation result 10A 8A 6A 4A 2A 0A 0V 0.5V 1.0V 1.5V 2.0V 2.5V 3.0V 3.5V 4.0V I(Vsense) V(EC) Evaluation circuit Vsense EC V1 0Vdc V2 D1 0Vdc D1MBH05D-060 U1 1MBH05D-060 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009

10. Comparison Graph Simulation result Comparison table VF (V) IF(A) %Error Measurement Simulation 0.2 1.200 1.232 2.65 2 1.700 1.713 0.74 4 2.050 2.006 -2.16 6 2.300 2.262 -1.66 8 2.500 2.503 0.11 10 2.700 2.735 1.30 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009

11. Reverse Recovery Characteristics Circuit Simulation result 6.0A 5.0A 4.0A 3.0A 2.0A 1.0A 0A -1.0A -2.0A -3.0A 4.92us 4.96us 5.00us 5.04us 5.08us 5.12us 5.16us 5.20us 5.24us 5.28us I(FWD) Time Evaluation circuit L2 1 2 1.6uH U2 D2 1MBH05D-060 D1MBH05D-060 IC = 5 1500uH FWD 2 1 C L1 VCE 200 Rg U1 D1 1MBH05D-060 D1MBH05D-060 V1 = -15 V2 = 15 100 TD = 5u V1 TR = 10n TF = 10n PW = 4.998u PER = 100u 0 Test condition: VCC=300 (V), IC=5 (A), -di/dt=100A/usec Parameter Unit Measurement Simulation %Error trr nsec 61.000 27.595 -54.76 Irr A 2.200 2.188 -0.55 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009

SPICE MODEL of 1MBH05D-060 (Professional+FWDS Model) in SPICE PARK

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