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BJTのデバイスモデリングに必要な測定項目

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Tsuyoshi Horigome
Tsuyoshi Horigome

BJTのデバイスモデリングに必要な測定項目です。

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Reverse Early Voltage Characteristic Ie vs. hFE Reverse DC Beta Characteristic Forward Early Voltage Characteristic Ic vs. hFE IV hFE-Ic Characteristic Ic vs.Vce(sat) BJT Vce(sat) -Ic Characteristic Ic vs.Vbe(sat) Vbe(sat) -Ic Characteristic Vce vs.Cobo C-B Capacitance Characteristic CV Veb vs.Cibo E-B Capacitance Characteristic BJT .mmap - 2008/06/11 -

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BJTのデバイスモデリングに必要な測定項目

  • 1. Reverse Early Voltage Characteristic Ie vs. hFE Reverse DC Beta Characteristic Forward Early Voltage Characteristic Ic vs. hFE IV hFE-Ic Characteristic Ic vs.Vce(sat) BJT Vce(sat) -Ic Characteristic Ic vs.Vbe(sat) Vbe(sat) -Ic Characteristic Vce vs.Cobo C-B Capacitance Characteristic CV Veb vs.Cibo E-B Capacitance Characteristic BJT .mmap - 2008/06/11 -