2. 2
Agenda
Non Isolated Converter Topologies and Their Isolated DC/DC Derivatives
• PFC Boost
• Buck
• Buck-Boost
Single Ended Converter Topologies
• Transformer Reset Techniques
• Forward Converter
• Flyback Converter
Double Ended Converter Topologies
• Push Pull
• Half Bridge
• Full Bridge
• Phase Shifted Full Bridge
Synchronous Rectification
• Current Doubler Rectifier
3. 3
DOUBLE-ENDEDSINGLE-ENDED
ACTIVE CLAMP
2-SWITCH
PUSH-PULL
HALF BRIDGE
FULL BRIDGE
LOW POWER (<100W)
MID-POWER (100W-500W)
HIGH-POWER (>500W)
HARD SWITCHED
ZVT/PHASE SHIFT
NON-ISOLATED
ISOLATED
D
V
V
i
O
=
DV
V
i
O
−
=
1
1
FORWARD
D
D
V
V
i
O
−
−=
1
SINGLE-ENDED
FLYBACK
BOOST BUCK-BOOST BUCK
ACTIVE CLAMP
2-SWITCH
LLC
Isolated Power Topology Derivatives
8 “Mainstream” Topologies
Non-Isolated
1. Boost
2. Buck-Boost
3. Buck
Isolated
4. Flyback
5. Forward
6. Push-Pull
7. Half Bridge
8. Full Bridge
4. 4
Other Topologies?
Numerous Variations Exist
• Sepic
• Cuk
• Current Fed Buck
• Tapped Inductors
• Multiple Outputs
• Interleaving
• More?
Different Ways to Operate Them
• Voltage Mode Control
• Current Mode Control
• Digital Control
• Variable Frequency
• CCM, DCM, BCM
• ZVS
• ZCS
• Synchronous Rectification
Some Practical Converter Topology Advice
• Most power conversion requirements can be met using one or more of the 8 mainstream topologies
• Save more difficult topologies for unique application requirements
• Beware of publications proclaiming the “best” topology
5. 5
AC Line
85V<VAC<265V
VDC=400V 400V to 48V Bus Converter
VPOL_1<5V
VPOL_N<5V
48V to 12V IBC (Intermediate Bus Converter)
Telecom Rectifier
Multi-Stage Topology
Typical Distributed Power System
High Power DC/DCPFC Boost
POLDCDCPFCSYS ηηηηη ×××=
%9.84%96%95%95%98 =×××=SYSη
Scalable, efficient, complex protection functions, sequencing,
redundancy, digital control, etc
Efficiency example:
POL DC/DC
7. 7
Boost Converter
Most popular topology for Power Factor Correction
• Simple power stage
• Efficient energy storage
• Continuous input current waveform
• VIN<VOUT
Operating modes
• CCM – fixed frequency, best PF and THD, Any Power Level
• BCM – variable frequency, good PF and THD, <300W
• DCM – never used intentionally but unavoidable at light load
Usually power factor correction capability is lost
AC
LINE
VB
EMI
Filter
DC/DC
VLOAD
8. 8
Boost Converter
VGS(Q)
VDS(Q)
IL
IDS(Q)
ID
VOUT
BCM
tON tOFF
TS
𝑉𝑉𝐼𝐼𝐼𝐼(𝑡𝑡) × (𝑡𝑡𝑂𝑂𝑂𝑂 + 𝑡𝑡𝑂𝑂𝑂𝑂𝑂𝑂 ) = 𝑉𝑉𝑂𝑂𝑂𝑂𝑂𝑂 × 𝑡𝑡𝑂𝑂𝑂𝑂𝑂𝑂
𝑉𝑉𝐼𝐼𝐼𝐼(𝑡𝑡) × 𝑇𝑇𝑆𝑆 = 𝑉𝑉𝑂𝑂𝑂𝑂𝑂𝑂 × 𝑡𝑡𝑂𝑂𝑂𝑂𝑂𝑂
𝑉𝑉𝑂𝑂𝑂𝑂𝑂𝑂
𝑉𝑉𝐼𝐼𝐼𝐼(𝑡𝑡)
=
𝑇𝑇𝑆𝑆
𝑡𝑡𝑂𝑂𝑂𝑂𝑂𝑂
=
1
1 − 𝐷𝐷
Inductor volt-second balance:
Boost transfer function:
VIN<VOUT
Most efficient at lower D
Continuous input current
High PF, low THD
CCM, BCM, DCM modes
VOUT
VAC
VIN(t)
D
IL
L
VL
Q
COUTCBYP
VOUT
VAC
VIN(t)
D
IL
L
VL
Q
COUTCBYP
〈𝑉𝑉𝐿𝐿〉 𝑇𝑇 𝑆𝑆
= 𝑉𝑉𝐼𝐼𝐼𝐼(𝑡𝑡) × 𝑡𝑡𝑂𝑂𝑁𝑁 + ��𝑉𝑉𝐼𝐼𝐼𝐼(𝑡𝑡) − 𝑉𝑉𝑂𝑂𝑂𝑂𝑂𝑂 � × 𝑡𝑡𝑂𝑂𝐹𝐹𝐹𝐹 � = 0
10. 10
Continuous Conduction Mode (CCM) PFC
IL
Advantages
• Low Ripple current: Lower core losses
• Lower EMI : Smaller Input Filter
• Simple inductor design
• Fixed frequency operation, best PF and THD
• Can be used at any power level
• Easily interleaved for power levels up to
many KW
Disadvantages
Requires very fast boost diode with low IRR
Silicon Carbide diodes are often used
Larger Inductor
MOSFET Switching Loss (hard switching)
(1-D)TsDTs
Ts
IL
IDIsw
(Not to scale)
11. 11
Boundary Conduction Mode (BCM) PFC
IL
DTs
Ts
IDIsw
Advantages
• MOSFET turns on at zero current
• ZVS/valley switching
• No reverse recovery in boost diode
(low cost, low VF diode can be used)
• Higher efficiency compared to CCM
Disadvantages
• Larger MOSFET conduction loss
• Variable Frequency
• Inductor design can be complex
• High peak current limits practical use to
~300W (Impact on EMI filter)
(Not to scale)
12. 12
Buck Converter
VGS(Q)
VD
VDS(Q)
IL
IDS(Q)
ID
VIN
VF
VL
-VOUT
VIN-VOUT
VIN+VF
BCM
tON tOFF
TS
Inductor volt-second balance: Buck transfer function:
VIN>VOUT
Most efficient at higher D
VOUT
D
VOUT
D
IL
Q
L
VL
L
VL
Q COUT
COUT
VIN
CIN
VIN
CIN
〈𝑉𝑉𝐿𝐿〉 𝑇𝑇 𝑆𝑆
= [( 𝑉𝑉𝐼𝐼𝐼𝐼 − 𝑉𝑉𝑂𝑂𝑂𝑂𝑂𝑂 ) × 𝑡𝑡𝑂𝑂𝑂𝑂 ] − 𝑉𝑉𝑂𝑂𝑂𝑂𝑂𝑂 × 𝑡𝑡𝑂𝑂𝑂𝑂𝑂𝑂 = 0
𝑉𝑉𝐼𝐼𝐼𝐼 × 𝑡𝑡𝑂𝑂𝑂𝑂 = 𝑉𝑉𝑂𝑂𝑂𝑂𝑂𝑂 × (𝑡𝑡𝑂𝑂𝑂𝑂 + 𝑡𝑡𝑂𝑂𝑂𝑂𝑂𝑂 )
𝑉𝑉𝐼𝐼𝐼𝐼 × 𝑡𝑡𝑂𝑂𝑂𝑂 = 𝑉𝑉𝑂𝑂𝑂𝑂𝑂𝑂 × 𝑇𝑇𝑆𝑆
𝑉𝑉𝑂𝑂𝑂𝑂𝑂𝑂
𝑉𝑉𝐼𝐼𝐼𝐼
=
𝑡𝑡𝑂𝑂𝑂𝑂
𝑇𝑇𝑆𝑆
= 𝐷𝐷
13. 13
Buck-Boost Converter
Inductor volt-second balance: Buck-Boost transfer function:
VIN<VOUT or VIN>VOUT
Used for negative VOUT
〈𝑉𝑉𝐿𝐿〉 𝑇𝑇 𝑆𝑆
= 𝑉𝑉𝐼𝐼𝐼𝐼 × 𝑡𝑡𝑂𝑂𝑂𝑂 + 𝑉𝑉𝑂𝑂𝑂𝑂𝑂𝑂 × 𝑡𝑡𝑂𝑂𝑂𝑂𝑂𝑂 = 0
𝑉𝑉𝐼𝐼𝐼𝐼 × 𝑡𝑡𝑂𝑂𝑂𝑂 = −(𝑉𝑉𝑂𝑂𝑂𝑂𝑂𝑂 × 𝑡𝑡𝑂𝑂𝑂𝑂𝑂𝑂 )
𝑉𝑉𝑂𝑂𝑂𝑂𝑂𝑂
𝑉𝑉𝐼𝐼𝐼𝐼
= − �
𝑡𝑡𝑂𝑂𝑂𝑂 /𝑇𝑇𝑆𝑆
𝑡𝑡𝑂𝑂𝑂𝑂𝑂𝑂 /𝑇𝑇𝑆𝑆
� = − �
𝑡𝑡𝑂𝑂𝑂𝑂 /𝑇𝑇𝑆𝑆
(𝑇𝑇𝑆𝑆 − 𝑡𝑡𝑂𝑂𝑂𝑂 )/𝑇𝑇𝑆𝑆
�
𝑉𝑉𝑂𝑂𝑂𝑂𝑂𝑂
𝑉𝑉𝐼𝐼𝐼𝐼
= − �
𝐷𝐷
1 − 𝐷𝐷
�
VGS(Q)
VD
VDS(Q)
IL
IDS(Q)
ID
VF
VL
VIN
VIN+|-VOUT|
tON tOFF
TS
VIN+|-VOUT|
VOUT-VF
-VOUT
IL
L VL
Q COUT
D
-VOUT
VIN
IL
L VL
Q COUT
CIN
D
VIN
CIN
15. 15
Benefits of a Transformer
AC
AC DC
Output Load
(or DC)
D1
L
CO
Q1
CIN
VOVIN
D1
D2
L
CO
NP NS
CIN
Q1
VIN
VO
1. Provides primary to secondary safety isolation – subject to regulatory standards
2. Voltage conversion resolution
D
V
V
IN
O
= D
N
N
V
V
P
S
IN
O
=
Ex: For FSW=300kHz (TSW=3.33µs), NP:NS=4:1, 36V<VIN<75 and VO=5V
Buck Converter Isolated Buck (Forward) Converter
27%<D<55%
900ns<tON<1.8µs
6%<D<14%
200ns<tON<467ns
3. Multiple outputs can be regulated/quasi-regulated
16. 16
Transformer Characteristics
NP NS
VIN
VOUT
RP
RS
LP(LEAK) LS(LEAK)
CP(W)
CS(W)
NP NS
LMAGRCORE
CP-S(MUTUAL)
NP NS
VIN
VOUT
VGS
VDS
Parasitic Transformer Model
CCM Flyback
Overshoot/ringing due to
Leakage Inductance
Ideal transformer
• Perfect coupling between Np:Ns
• No energy storage
Flyback “transformer”
• Really a coupled inductor
• Primary energy stored during tON
• Power transferred during tOFF
17. 17
Single Ended Topologies Defined
∝B Vt
∝H NI
∆B
B1
B2
+BSAT
-BSAT
D1
D2
L
CO
NP NS
CIN
Q1
Reset
Circuit
TS
+VIN(max)
+VIN(min)
D=25%
D=50%
D>50%
-VRESET
-VRESET
OFFRESETONIN tVtV ×−=×+ (max)
RESETIN VV −=+ (max)
OFFON tt =
tON
tOFF
OFFON tt >
INQDS VV ×= 2)1(
INQDS VV ×> 2)1(
+VIN
-VRESET
-VIN
t
t
t
0
0
0
OFFRESETONIN tVtV ×−=×+
RESETIN VV −<+
(b) Forward Converter
Single Ended – Transformer operation limited to first quadrant
(c) Transformer Volt-Second Balance
(a) Transformer Hysteresis
18. 18
Single Ended Topologies Defined
∝B Vt
∝H NI
∆B
B1
B2
+BSAT
-BSAT
D1
D2
L
CO
NP NS
CIN
Q1
Reset
Circuit
(b) Forward Converter
Single Ended – Transformer operation limited to first quadrant
(a) Transformer Hysteresis (c) Gapped Flyback “Transformer”
D
CO
NP NS
CIN
Q1
VIN
VO
(d) Flyback Converter
∝B Vt
∝H NI
∆B
B1
B2
+BSAT
-BSAT
UNGAPPED
GAPPED
19. 19
Single Ended Transformer Reset Techniques
Reset Winding
+ Reset Energy Recycled
+ Simple Off-Line Solution
- 50% Duty Cycle Limit (1:1)
- Possible Core Saturation
- Transformer Structure
- Q1 Hard Switched
Resonant Reset
+ Reset Energy Recycled
+ Fewest Components
+ Simple Telecom Solution
- Repeatable Design Difficult
- High VDS Stress
- Not for Off-Line Power
- Not Suitable for Self-Driven SR
- Q1 Hard Switched
RCD Reset
+ Inexpensive Off-Line Solution
+ >50% Duty cycle Possible
- Reset Energy Dissipated
- Q1 Hard Switched
Active Clamp Reset
+ High Efficiency (ZVT)
+ Higher Frequency Operation
+ Lowest Vds Stress
+ Off-Line and Telecom
+ SR Gate Drive
- Q1, Q2 Gate Drive
- Higher Cost
- Limited PWM and/or Driver
Choices
NP NS
Q1
Reset
Winding
0
VIN
-VR
NP NS
Q1
RCD Reset
0
VIN
-VR
NP NS
Q1
Resonant
Reset
0
VIN
-VR
Q2
CCL
NP NS
Q1
Active Clamp
Reset
0
VIN
-VR
20. 20
Flyback Converter Derivation
-VOUT
L
Q COUT
D
VIN
CIN
-VOUT
L
Q COUT
D
VIN
CIN
1:1
-VOUT
LM
Q COUT
D
VIN
CIN
1:1
(a)
(b)
(c)
(d)
(e)
a) Non-isolated buck-boost
b) Coupled inductor buck-boost
c) Isolated buck-boost
d) Isolated flyback converter
e) D can be in return path
VOUT
LM
Q
COUT
D
VIN
CIN
n:1
VOUT
LM
Q
COUT
D
VIN
CIN
n:1
21. 21
Flyback Converter Operating Modes
Discontinuous Conduction Mode (DCM)
• Advantages (DCM): Smaller transformer, trr of output rectifiers is less of an issue since
current is zero before reverse voltage appears, single pole characteristic of the power circuit
simplifies compensation
• Disadvantages (DCM): Peak currents in the switch and diodes are considerably greater,
ripple currents in output capacitors are much greater than continuous mode
Continuous Conduction Mode (CCM)
• Advantages (CCM) = Peak currents in the switching devices are lower, ripple currents in the
output capacitors are lower
• Disadvantages (CCM) = Larger transformer is required, right half plane zero (RHPZ) shows
up in the control loop thereby complicating compensation
Boundary Conduction Mode (BCM)
• Variable frequency
22. 22
Flyback Converter
CCM Operation
D
D
N
N
V
V
P
S
IN
O
−
×=
1
(a) Flyback Converter
(b) CCM Waveforms
CCM Transfer Function
Limitations
• Q1 switching loss (hard switched)
• D2 reverse recovery loss
• Q1(VDS)>VIN
• 50% duty cycle limit
• Right half plane zero in CCM
VOUT
LM
Q
COUT
D
VIN
CIN
n:1 NSNP
0
0
0
0
0
0
PWM
VDS
VS
IQ1
ID1
IL
VOUT
-(NS/NP)VIN
VIN+(NP/NS)VOUT
23. 23
Quasi-Resonant Flyback
Conventional Valley Switching
Wide frequency variation depends on output load condition
t
t
iD
vDS
T2
Output Power [W]
fS[Hz]
vDS
iD
t
t
T1
Output load decreases
Operating frequency
increases
SOSSLossSwitching fVCP DS
2
∝
24. 24
Quasi-Resonant Flyback
Window Valley Switching Ts
max
=10.8us
tB=7.8us
tW=3.0us
fs_A=110kHz
fs_B=122kHz
fs_C=127.5kHz
fs_D=92.6kHz
(a)
(b)
(c)
(d)
vDS (100V/div)
iD (100mA/div) Time scale 2usec/div
Frequency variation depends on
output load conditions
Operating frequency is within narrow
variation (127.5 kHz ~ 92.6 kHz)
Light Load
Heavy Load
25. 25
Two-Switch, Quasi-Resonant Flyback
CC
CVFB
FAN6300H
1
2
3
4 5
6
7
8
NC
HV
VDD
GATEGND
CS
FB
DET
FAN7382
1
2
3
4 5
6
7
8
HO
VB
VS
LOCOM
LIN
HIN
VCCPBIAS
VIN
R1
R2
R3
Q1
Q2
D1
D2
D3
D4D5
ACIN
R4
C1
VA
VLED
VHS
C2
C3
(FROM PFC)
(FROM PFC)
RDY
PBIAS
26. 26
Two-Switch, Quasi-Resonant Flyback
Switching Waveforms
0V
VDS
0A
IDS
tftOFF tON
TS
0A
ID
VAVA
0V
0V
VDET
0V
VIN
PBIAS
VIN+VHS
VGS(HS)
VGS(LS)
0.7V
5µs
2.5V
VO
OVP
IDET(SOURCE)>30µA
tDELAY=200ns
VRO
2
VRO
2
VIN
2
VIN
2
Quasi-resonant, variable frequency
HS and LS MOSFETs switch synchronously
Switching period, TS=tOFF+tf+tON
Inductor current switches from 0A (ZCS) every
switching cycle
VDS
• ZVS→VOUT>2×VIN
• Valley switching→otherwise
• Window valley switching
27. 27
Two-Switch, Quasi-Resonant Flyback
Measured Waveforms
Extended Window Valley Switching
VOUT< ½ VIN
D=11%
FS=68kHz
POUT=24W
VDS Valley Switching on First Valley
• VOUT< ½ VIN
• D=42%
• FS=63kHz
• POUT=85W
28. 28
Buck Derived Transfer Functions
D1
L
CO
VOVIN
D1
L
CO
VOVIN
NP : NS
tON
tOFF
TS
D
N
N
V
V
P
S
IN
O
×=
(a) Buck Converter (b) Forward Converter (isolated buck)
S
ON
OFFON
ON
T
t
tt
t
D =
+
=Duty Cycle =
INO VDV ×=
( ) OFFOONOIN tVtVV ×=×−
D
V
V
IN
O
=
Buck Converter Transfer Function
Forward Converter Transfer Function
D
N
N
V
V
P
S
IN
O
×=
All Isolated Single Ended Buck Converters
All Isolated Double Ended Buck Converters
D
N
N
V
V
P
S
IN
O
××= 2
29. 29
Forward Converter Basics
0
0
0
PWM
VDS(Q1)
VP
VR+VIN
VIN
IMAG
0 IQ1
IL
ID1
ID2
0
0
0
0
VIN
R
P
INR
N
N
VV ×−=
D1
D2
L
CO
NP NSCIN
Q1
VIN
VO
NR
D3
(a) Forward Converter with Reset Winding
(b) DCM Waveforms (D<0.5)
Really a transformer coupled buck
Transfer function
Limitations
• Q1 switching loss (hard switched)
• D2 conduction loss
• Q1(VDS)>2VIN
• 50% duty cycle limit (NP:NR = 1:1)
D
N
N
V
V
P
S
IN
O
×=
30. 30
VIN
0
VP
IMAG
TS
DTS D2TS D3TS
t
t
R
P
IN
N
N
V ×−
Why 50% Duty Cycle Limit?
(a) Forward Converter: Transformer Voltage and Current
1. Average primary voltage must be zero over switching period
2. Solve (1) for D2
0)0()( 32 =+
−+=〉〈 D
N
N
VDVDV
R
P
ININp
132 =++ DDD
3. By definition
(1)
(2)
(3)
4. Solve (3) for D3
01 23 ≥−−= DDD (4)
P
R
N
N
DD =2
5. Sub (2) into (4)
01 ≥−−
P
R
N
N
DD (5)
6. Solve (5) for D
(6)
P
R
N
N
D
+
≤
1
1
7. For NP:NR=1:1 (common practice)
(7)
2
1
≤D
31. 31
Problems with Duty Cycle > 50%
VIN
0
VP
IMAG
TS
DTS D2TS D3TS
t
t
R
P
IN
N
N
V ×−
Equal Vxt Area
VIN
VP
IMAG
t
t
R
P
IN
N
N
V ×−
2TS 3TSTS
DTS D2TS
D=67%
D=40%
Unequal Vxt Area
Common practice is to use 1:1 bifilar
transformer winding for NP:NR
D=40%
• Converter operates in DCM
• Transformer is completely reset on every
switching cycle
D=67%
• Converter wants to operate in CCM
• Transformer can NOT reset on every
switching cycle
• IMAG increases due to volt second product
imbalance
• Transformer saturation will result
• Operation beyond D=50% requires
additional reset voltage
32. 32
Duty Cycle Greater Than 50%
VDS vs Vin
Third Winding Reset
72
84
96
108
120
132
144
156
168
180
192
204
216
36 42 48 54 60 66 72
Vin (V)
VDS(V)
Np:NR=1:1 Np:NR=1:2
NP NS
Q1
NR
VDS
VIN
VP
IMAG
t
t
R
P
IN
N
N
V ×−
2TS 3TSTS
DTS D2TS
D=67%
Equal Vxt Area
}
}
NP:NR=1:1
NP:NR=1:2
For NP:NR=1:2
VDS=3VIN
Conclusion: Reset winding technique, D>50% not practical for high VIN applications
due to additional MOSFET VDS stress
33. 33
Active Clamp Forward Converter
D1
D2
L
CO
NP NS
CIN
Q1
Q2
CCL
0
0
0
0
PWM
Q1 VDS
VP
IQ1
VIN
VRESET
VIN+VCL
0
Q2 VGS
IMAG
ICL
0
IP
Advantages
• Reduced MOSFET VDS voltage stress
• Higher efficiency through ZVS
• Use of parasitic elements
• Higher frequency operation
• Square wave transformer reset for SR applications
• Suitable for off-line (HS clamp) or DC/DC (LS clamp)
Disadvantages
• Conditional ZVS only
• Dual primary side gate drive with accurate dead-time control
and max duty cycle clamp required
• Poor transient response due to CCL
Transfer Function
D
N
N
V
V
P
S
IN
O
×=
34. 34
Active Clamp Forward Converter
Two Versions
D1
D2
L
CO
NP NS
CIN
Q1
Q2
CCL
D1
D2
L
CO
NP NS
CIN
Q1
Q2
CCL
(a) High-Side Active Clamp
(Flyback Clamp)
(b) Low-Side Active Clamp
(Boost Clamp)
INV
D
×
−1
1
INV
D
×
−1
1
INV
D
D
×
−1
INV
D
D
×
−1
INV
D
D
×
−1
INV
D
×
−1
1
PARAMETER HIGH-SIDE ACTIVE CLAMP (off-line) LOW-SIDE ACTIVE CLAMP (telecom)
VDS
VRESET
VCL
CCL
(applied voltage)
Lower voltage by VIN volts
Highest VCL occurs at DMAX
Higher voltage by VIN volts
Not practical for off-line
CCL
(cap value)
Same value as low-side for given ripple voltage Same value as high-side for given ripple voltage
Clamp MOSFET
(Q2)
N-Channel
Can be used for >500V
P-Channel
Can be used up to 500V
Gate Drive Gate drive transformer required Level shifting gate drive required
35. 35
Active Clamp Forward Converter
VDS Voltage Stress
VDS vs Vin
Active Clamp Reset
75
85
95
105
115
125
135
145
36 42 48 54 60 66 72
Vin (V)
VDS(V)
N=5 N=6 N=7
SECIN
IN
INDS
VNV
V
D
VV
×−
=
−
×=
2
1
1
Telecom Converter Example
VVV IN 7236 ≤≤
S
P
N
N
N =, where
VVO 3.3=
Optimize transformer turns ratio, N, to
minimize VDS voltage stress over entire
VIN range
For N=6
• VDS=108V at VIN(MIN) and VIN(MAX)
• VDS≤1.5VIN at VIN(MAX)
N=5
N=6
N=7
DMIN=28%DMAX=55%
IN
O
V
NV
D
×
=
IMPORTANT – Accurate max duty cycle clamp or volt-second clamp is necessary due to the
parabolic nature of VDS near DMAX
36. 36
Active Clamp Forward Converter
Clamp Capacitor
D1
D2
L
CO
NP NS
CIN
Q1
Q2
CCL
0
0
PWM
Q1 VDS
VIN+VCL
0
Q2 VGS
VCL(Ripple) = 0%
VCL(Ripple) = 50%
Clamp capacitor optimal
• VCL(RIPPLE) = 10%-20%
VCL(Ripple) = 10%
Q1 VDS Waveforms verses Clamp Capacitor Value:
Clamp capacitor too small
• VCL(RIPPLE) = 50%
• Better transient response
• Increase VDS stress
Clamp capacitor too large
• VCL(RIPPLE) = 0%
• Lowest VDS stress
• Poor transient response
Choosing Clamp Capacitor
• Capacitor needs to be large enough to approximate the clamp voltage as DC
• Initially calculate CCL according to “Rule of Thumb”
• Select CCL voltage rating according to maximum clamp voltage PLUS allowable
ripple voltage and safety margin
)(2 MAXoffCLMAG tCL >××π
( )
2
2
)2(
1
10
swMAG
MIN
CL
FL
D
C
××
−
×>
π
37. 37
Active Clamp Forward Converter
Zero Voltage Switching (ZVS)
ZVS occurs when the voltage across the MOSFET, VDS, is positioned to “zero volts” prior to
the start of the next switching cycle.
Benefits of ZVS
• Reduced switching losses
• Higher operating frequency possible (smaller passive component size)
• Higher converter efficiency
• Increased reliability
• Reduced radiated emissions (EMI)
VDS
ID
PSW=VDS x ID x FSW
(a) Hard Switching (b) “Ideal” ZVS
38. 38
Active Clamp Forward Converter
Zero Voltage Switching (ZVS)
D1
D2
L
CO
Q1
Q2
CCL
D2
CDS
D1
CDS
VDS
RP
RS
LP(LEAK) LS(LEAK)
CP(W)
CS(W)
NP NS
LMAGRCORE
CP-S(MUTUAL)
CD1
CD2
Parasitic elements can be used to benefit ZVS
Active Clamp Forward converter uses fixed frequency resonant transitions to achieve
ZVS when specific operating conditions are met
39. 39
Active Clamp Forward Converter
Zero Voltage Switching, Q1 Turn-Off
IM
+ IO
N
IC
VIN
VDS
0
VIN
VDS
IM
IO
N
VGS(Q1)
VGS(Q2)
ZVS turn-off is easy
• Magnetizing current, IM
+, and reflected secondary current
combine to fully charge the resonant capacitance, C
( )2
2
2
1
2
1
CLINDSM
O
M VVCI
N
I
L +>
+ +
NOTE: leakage inductance is neglected for this analysis
D1
D2
L
CO
NP NS
CIN
Q1
Q2
CCL
40. 40
Active Clamp Forward Converter
Zero Voltage Switching, Q1 Turn-On
IM
- IO
N
IC
VIN
VDS
, for ZVS turn-on
−
MI
0
VIN
VDS
IM
IO
N
VGS(Q1)
VGS(Q2)
N
I
I O
M >−
VDS
VGS(Q1)
1 - Non-ZVS
2 - Optimal ZVS
3 - ZVS
(2, 3) - ZVS
1 - Non-ZVS
(Miller)
ZVS turn-on is difficult
• Magnitude of IM
- must be greater than the magnitude of
the reflected secondary current during entire ZVS
window
• Must be enough resonant current to fully discharge C
• Must be enough dead time for the drain voltage to fully
resonate to near zero volts
N
I
I O
M >−
( )2
2
2
1
2
1
CLINDSM
O
M VVCI
N
I
L +>
− −
DSMRES CLt ×≥
2
π
NOTE: leakage inductance is neglected for this analysis
41. 41
Single Ended (<500W)
2 Switch Forward Converter
D1
D2
L
CO
NP NSCIN
Q1
Q2
D3D4
0
0
0
PWM
(Q1, Q2)
VDS
(Q1, Q2)
VS
VIN/NP
VIN
VIN/2
ID3, ID4
-VIN/NP
0 IQ1, IQ2
0
IL
ID1
ID2
0
0
IO
IMAG0
Advantages
Ruggedness
MOSFET voltage stress limited to VIN
Magnetizing energy recycled by D3, D4
Universal input, 150W<P<500W
Disadvantages
Limited to less than 50% duty cycle
High side gate drive required for Q2
Hard switching
Transfer Function
D
N
N
V
V
P
S
IN
O
×=
42. 42
Single Ended (>1kW)
Interleaved 2 Switch Forward Converter
D1
D2
L
CO
NP NSCIN
Q1
Q2
D3D4
D5
D6
L
NP NS
Q3
Q4
D7D8
Dn
Dn
L
NP NS
Qn
Qn
DnDn
Advantages
• Can operate multiple power stages out of
phase
• Ripple current cancellation at output
capacitor
• Reduced RMS current at input capacitor
• Multiple stages can add up to kW of power
• Smaller output inductors can improve
transient response
Disadvantages
• Design complexity
• PCB layout can be challenging
44. 44
Double Ended Topologies Defined
∝B Vt
+BSAT
∝H NI
-BSAT
∆B
B1
B2
∝B Vt
∝H NI
∆B
B1
B2
+BSAT
-BSAT
∆B
B1
B2
(RCD Reset)
(Active Clamp)
Normal
Flux Imbalance
Saturation
Primary Current
Double Ended – Transformer operation occurs in first and third quadrants
Active Clamp Forward
“Single ended” but operates slightly into the
third quadrant
Half-Bridge, Full-Bridge
Symmetrical operation between first and third
quadrants
No transformer reset circuitry required
45. 45
Double Ended (<500W)
Push Pull Converter
D1
D2
L
CO
NP
NS
Q1
NS
Q2
CIN
NP
PWM, Q1
PWM, Q2
IQ1
IQ2
VDS(Q1)
2VIN
VDS(Q2)
2VIN
ID1
ID2
ILIO
Advantages
• Lower primary current compared to HB
• Best for lower VIN, such as telecom
DC/DC of US Line Voltage
• Simple low-side gate drive
Disadvantages
• High voltage (2xVIN) on primary MOSFETs
• Transformer flux walking (VMC only)
• Center tapped transformer structure
• Hard switching
Transfer Function
D
N
N
V
V
P
S
IN
O
××= 2
46. 46
Double Ended (<500W)
Half Bridge Converter (Symmetrical)
D1
D2
L
CO
NP
NS
Q1
NS
Q2
CIN
C1
C2
VP
VDS(Q1, Q3)
VIN
VDS(Q2, Q4)
VIN
ID1
ID2
IL
IO
VP
IP
VIN/2
PWM, Q1
PWM, Q2
-VIN/2
Advantages
• Better transformer utilization
• MOSFET voltage stress limited to VIN
• Best for high VIN off line applications up to 500W
• Single winding primary
• Transformer balanced by C1 and C2
• Asymmetric and resonant versions can ZVS
Disadvantages
• Totem pole primary gate drive
• High primary current
• Possible cross conduction between Q1 and Q2
• Hard switching
Transfer Function
D
N
N
V
V
P
S
IN
O
××= 2
47. 47
Asymmetrical Half Bridge Converter
+
Vp
-
+
Vd
-
+
Vp
-
1 : 1
0
Asymmetric square waveform
Symmetric square waveform
Vd
Vd
0
CB
+
Vp
-
+
Vd
-
+ VCB -
Same area
VCB
+
Vp
-
1 : 1
0
0
What if an asymmetric square wave were introduced to the transformer?
Transformer will be saturated
What if an asymmetric square wave were introduced to the transformer in series with a DC
blocking capacitor?
Not saturated due to the voltage of the blocking capacitor, CB
48. 48
Asymmetrical Half Bridge Converter
VP
IP
Q2 (D)
Q1 (D)
VIN/2
-VIN/2
D=0.46 D=0.23
VIN/2
-VIN/2
VP
IP
Q2 (D)
Q1 (1-D)
VIN-VCB
VCB VCB
D=0.46 D=0.23
Equal
Area
VIN-VCB
(a) Symmetrical HB waveforms
(b) Asymmetrical HB waveforms
Asymmetrical Gate Drive
• Q2 modulated by D
• Q1 driven by 1-D
• Fixed dead time between Q1 and Q2
• Dead time optimized for ZVS and anti cross conduction
• Fixed frequency ZVS PWM operation
• Near D=0.5, operation is same as symmetrical HB
BUT, excessive voltage stress is applied to secondary
rectifier at VIN(MAX)
( )DD
N
N
V
V
P
S
IN
O
−×××= 12
D1
D2
L
CO
NP
NS
Q1
NS
Q2
CIN
CB
VP
49. 49
Asymmetrical Half Bridge
VD vs D
50
75
100
125
150
175
200
225
250
0.20 0.23 0.26 0.29 0.32 0.35 0.38 0.41 0.44 0.47 0.50
Duty Cycle
DiodeVoltageStress(V)
VD1 VD2
Asymmetrical Half Bridge Converter
Secondary Rectifier Voltage Stress
Reverse recovery and parasitic ringing
Wide DD Range requires use of high
voltage rectifiers
Converter operates best at D=0.5
D
V
V O
D
−
=
1
1 OD VDV ×=2
50. 50
Asymmetrical Half Bridge Converter
Advantages
• Fixed frequency ZVS
• Constant power transfer (D and 1-D) reduces output ripple
• Power stage can be controlled using any active clamp PWM controller
Disadvantages
• High voltage stress on secondary rectifier
• Loss of ZVS at some min load current – extending ZVS range is difficult
• Poor transient response due to blocking capacitor, CB
51. 51
LLC Resonant Half Bridge Converter
Square wave generator: produces a square wave voltage, Vd by driving switches, Q1 and
Q2 with alternating 50% duty cycle for each switch.
Resonant network: consists of Llkp, Llks, Lm and Cr. The current lags the voltage applied to
the resonant network which allows the MOSFET’s to be turned on with zero voltage.
Rectifier network: produces DC voltage by rectifying AC current
Ip
Ids2
Vd
(Vds2)
Vgs2
Im
Vin
ID
Vgs1
+
VO
-
Ro
Q1
Q2
n:1
Ip
Llkp
Lm
Cr
Ids2
Vd
Llks
Im
ID
Vin
Square wave generator
resonant network Rectifier network
Io
52. 52
LLC Topology Variations
VIN
Lr
Lm
Cr
Q1
Q2
VIN
Lr
Lm
Cr
Q1
Q2
VIN
Lr
Lm
½ Cr
Q1
Q2
½ Cr
VIN
Lr
Lm
½ Cr
Q1
Q2
½ Cr
+
VO
-
Ro
+
VO
-
Ro
+
VO
-
Ro
+
VO
-
Ro
Primary Side Variation Secondary Side Variation
Transformer across the
high side MOSFET
Transformer across the low
side MOSFET
Split resonant capacitor with
clamping diode
Split resonant capacitor
Full bridge rectifier with
single winding
2 Rectifier diode with center
tab winding
Voltage doubler rectifier
with single winding
Synchronous rectifier with
center tab winding
53. 53
LLC Resonant Half Bridge Converter
Advantages of the LLC resonant converter
• Narrow frequency variation range over wide load range
• Zero voltage switching even at no load condition
• Reduced switching loss through ZVS Improved efficiency and EMI
• When the two magnetic components are implemented with a single core (use the leakage inductance
as the resonant inductor), one component can be saved
54. 54
LLC Resonant Half Bridge Converter
Disadvantages of the LLC resonant converter
• Can optimize performance at one operating point, but not with wide range of input voltage and load
variations (too wide frequency range)
• Difficult to regulate the output at no load condition
• Significant current may circulate through the resonant network, even at the no load condition
• Quasi-sinusoidal waveforms exhibit higher peak values than equivalent rectangular waveforms
• High output current ripple
55. 55
Double Ended (<500W)
Push Pull Converter
D1
D2
L
CO
NP
NS
Q1
NS
Q2
CIN
NP
PWM, Q1
PWM, Q2
IQ1
IQ2
VDS(Q1)
2VIN
VDS(Q2)
2VIN
ID1
ID2
ILIO
Advantages
• Lower primary current compared to HB
• Best for lower VIN, such as telecom DC/DC of
US Line Voltage
• Simple low-side gate drive
Disadvantages
• High voltage (2xVIN) on primary MOSFETs
• Transformer flux walking (VMC only)
• Center tapped transformer structure
• Hard switching
Transfer Function
D
N
N
V
V
P
S
IN
O
××= 2
56. 56
Double Ended (>500W)
Full Bridge Converter (PWM)
D1
D2
L
CO
NP
NS
Q3
NS
Q4
CIN
Q1
Q2
Gate, Q1
Gate, Q2
VDS(Q1, Q4)
VIN
VDS(Q2, Q3)
VIN
ID1
ID2
IL
IO
Gate, Q3
Gate, Q4
VP
IP
VIN
-VIN
Advantages
• MOSFET voltage stress limited to VIN
• Twice the power compared to half bridge
• Single winding primary
Disadvantages
• Dual, totem pole primary gate drive
• Hard switching (Non-ZVT)
• Parasitics degrade circuit performance
• Circuit complexity
Transfer Function
D
N
N
V
V
P
S
IN
O
××= 2
57. 57
Double Ended (>500W)
Phase Shifted Full Bridge Converter
D1
D2
L
CO
NP
NS
Q3
NS
Q4
CIN
Q1
Q2
Gate, Q1
Gate, Q2
VDS(Q2, Q3)
VDS(Q1, Q4)
ID1
ID2
IL
IO
Gate, Q3
Gate, Q4
VP
IP
VIN
-VIN
VIN
Freewheel
Power
Freewheel
Power
VIN
Advantages
• High Efficiency ZVS
• Highest single stage processing power
• MOSFET voltage stress limited to VIN
• Twice the power compared to half bridge
• Full wave rectified secondary
• Excellent choice for EU line voltage (PFC pre-
regulator) with output power >1kW
Disadvantages
• Dual, high side primary gate drive
• Circuit complexity
• High circulating primary current for ZVS
• Loss of ZVS at light load current
Transfer Function D
N
N
V
V
P
S
IN
O
××= 2
59. 59
Phase Shift Control vs ZVT PWM Control
A
B
C
D
VPRI
IPRI
UL(A)
LL(B)
UR(C)
LR(D)
VPRI
IPRI
UR(C)
LR(D)
UL(A)
LL(B)
ZVT PWM Control
• Upper bridge FETs are fixed at 50% D
• Lower bridge FETs are trailing edge PWM
• Resonant delay set on lower FET leading edge
Freewheel period
• Both SRs are ON
• Reduces reflected secondary current since current
only flows through both SRs
• Less available ZVS current
Phase Shift Control
• All bridge FETs are fixed at 50% D
• A and B are synced to clock
• C and D are phase shift modulated
• Resonant delay set between AB and CD
Freewheel period
• Secondary-side load current freewheels through
transformer and is reflected to primary
• Reflected current aids ZVS
• Higher conduction losses at higher power
60. 60
Phase Shift Control vs ZVT PWM Control
ZVT PWM Control
• Current freewheels through one high-side active
FET and body-diode of other high-side FET during
each FW period
Phase Shift Control
• Current freewheels through two active high-side
FETs for first FW period then through two active
low-side FETs for second FW period
Freewheel
ResonantFreewheel
Resonant
( )ONDSFWDISS RIP _
2
2 ××= ( )ONDSFWFWFSWBDDISS RIIVFtP _
2
×+×××=
61. 61
ZVT PWM Control
Upper Bridge MOSFET Body-Diode Conduction
Freewheel (FW) Period
• For 36V<VIN<72V
• Body-diode conduction is 970ns at VIN=72V
Minimize body-diode conduction in upper MOSFETs
• Pre-regulate input voltage (PFC)
Still have to deal with brown-out and hold-up
• Operate converter at lowest frequency possible
VVF 1=
AI FW 2=
nstBD 970=
kHzFSW 265=
Ω= mR ONDS 25_
mWVAkHznsPBD 51412265970 =×××=
mWmAP ONRDS 100252 2
)( =Ω×=
Measured Values
Calculated Body-Diode Conduction Loss in each Upper FET
Calculated Channel Conduction Loss in each Upper FET
Total Conduction Loss for each FW period (ZVT PWM Control)
Total Conduction Loss for each FW period (PSFB Control)
Comparison of FW MOSFET Conduction Losses for
Telecom DC/DC App
VVIN 72=
AIOUT 10=
*Assume switching, gate charge, Coss losses
are same for each control method
mWmWmWP ZVTPWMFW 614100514)(1 =+=
mWmWmWP ZVTPWMFW 614100514)(2 =+=
mWmWP PSFBFW 2001002)(1 =×=
mWmWP PSFBFW 2001002)(2 =×=
(25%)
(UL and UR)
(UL and UR)
(A and B)
(C and D)
62. 62
High Power Topology Summary
D1
1
VIN
−
×
Topology Transformer Primary
Switches
VDS “Ideal” Application
CCM Boost Inductor
(non-isolated)
1 VOUT High power PFC >300W
Interleaved PFC >Several kW
BCM Boost Inductor
(non-isolated)
1 VOUT PFC <300W
Interleaved PFC <1kW
Forward Single-end 1 2xVIN <200W, universal off-line or telecom
Active Clamp Single-end 2 <500W, universal off-line or telecom, highest
efficiency required
2-Switch Forward Single-end 2 VIN <500W, universal off-line, PFC pre-regulator
Half Bridge Double-end 2 VIN <500W, EU off-line, Intermediate Bus Converters
Push Pull Double-end 2 2xVIN <500W, telecom or low VIN (<200V)
Full Bridge Double-end 4 VIN >500W, universal off-line
Phase Shifted FB Double-end 4 VIN >1kW, universal off-line or telecom, highest
efficiency required
Current Doubler Double-end NA NA Any double-ended topology, low VOUT, high IOUT
most benefit
63. 63
LLC vs AHB Comparison
LLC resonant converter Asymmetric Half-bridge
Control method Variable frequency with fixed duty cycle (50%) PWM with fixed frequency
Practically input
voltage range
Vmax
/Vmin
=1.2~1.4 Vmax
/Vmin
=1.2~1.3
Primary side MOSFET
voltage
Clamped to the input voltage Clamped to the input voltage
Secondary side rectifier
voltage stress
2 times the output voltage (for center tapped
transformer)
Usually about 3 to 6 times the output voltage for powering and
freewheeling diodes, respectively (for center tapped transformer)
Output capacitor current
ripple
Almost twice the output current (peak-to-peak) Several tens % of output current (peak-to-peak)
ZVS condition ZVS is easily achieved from full load to no load
condition using the energy in the magnetizing inductance
ZVS is difficult to achieve at light load condition
ZVS at full load condition is relatively easy
Other features No simple power limit capability such as pulse-by-
pulse current limit in PWM operation
Requires tight tolerance of resonant components (L,C)
Relatively large circulating current
Tight tolerance is not required for the resonant components (L,C)
+
VO
-
Ro
Q2
Q1
Vin
Io
Lr
Lm
CB
+
VO
-
Ro
Q1
Q2
Vin
Io
Lr
Lm
Cr
65. 65
Synchronous Rectification (SR)
D1
D2
L
CO
NP NS
CIN
Q1
Reset
Circuit
Efficiency vs Output Voltage
Vf=0.4V, Vf=1V
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0.5 1.7 2.8 4.0 5.1 6.3 7.4 8.6 9.7 10.9 12.0
Output Voltage (V)
Efficiency
Vf=0.4V Vf=1V
Q2
Q3
L
CO
NP NS
CIN
Q1
Reset
Circuit
What is Synchronous Rectification?
• Replacing secondary side discrete rectifiers
(D1, D2) with MOSFETs (Q2, Q3)
Benefits of SR
• Parallel MOSFETs
• Increase efficiency
Lower output voltage and higher current
applications benefit most
How do we drive them?
OUT
FOUTFOUTOUT
OUTOUT
IN
OUT
V
VIVIV
IV
P
P
+
=
×+×
×
==
1
1
η
66. 66
Single Ended Synchronous Rectification
SR Gate Drive Options
Q3
Q4
L
CO
NP NS
CIN
Q1
Q2
CCL
Q3
Q4
L
CO
NP NS
CIN
Q1
Q2
CCL
SR Gate Drive
Self-Driven SR
SR gate drive derived from transformer (as
shown) or output inductor
Advantages
• Simple – no timing issues
• High efficiency for few components
Disadvantages
• SR gate drive not regulated
• Difficult when VIN > 2:1
• No control of secondary during start-up
• Not compatible with all reset techniques
Control-Driven SR
SR gate drive comes from PWM control signal
Advantages
• SR gate drive is regulated
• Can be used for wide VIN applications
• Secondary is controlled by primary
Disadvantages
• Primary to secondary timing
67. 67
Q3
Q4
L
CO
SR Gate Drive
Reset
Circuit
NP NS
CIN
Q1
D
1-D
Single Ended “Hybrid” SR
SR Gate Drive Options
Hybrid-Driven SR
• Combination of control driven and self driven
• Forward SR (Q3) self driven by D
• Free wheeling SR (Q4) driven by PWM inverted (1-D)
Applications
• Forward converter operating in DCM
• RCD, Resonant and Third Winding Reset
68. 68
NP
Q3
Q4
CIN
Q1
Q2
Q5
L1
CO
NS
L2
Q6
SR Gate Drive
T1
Double Ended Synchronous Rectification
(>1kW)
(a) Full Bridge with Current Doubler SR Secondary
SR applications typically greater than 12V output
Highest efficiency
• Minimize body-diode conduction
• Use Secondary sensing for best timing
SR driver solution is strongly related to control scheme
• Primary side PWM control
Need signal and timing from pri-to-sec for good SR control
Difficult to adapt over line/load changes
• Secondary side PWM control
Allows sensing key nodes for timing optimization
Cross boundary with timing to communicate with primary
Direct drive between PWM and SR
Needs startup bias supply
Double ended control driven SR drive is the more difficult SR problem to solve
69. 69
Double Ended (All)
Current Doubler Rectifier
D1
D2
L
CO
NP
NS
NS
VO
D1
D2
L CO
NP
NS
NS
VO
D1
D2
CO
VO
V
I
V
D1
D2
CO
VO
V
I
I
What is it? - A full wave alternative rectification technique compatible with all
double ended converter topologies
D1
D2
CO
VO
L2
L1
NP
NS
NP
NS
D1
D2
L1
CO
L2
VO
NP
Q1
L1
CO
NS
L2
Q2
VO
OR
Current Doubler
Derivation of Current Doubler
(a) (b) (c) (d)
(e)
(f) (g)
70. 70
Double Ended (All)
Current Doubler Rectifier Operation
t3 t4
Q3
Q4
CIN
Q1
Q2
D1
D2
L1
CO
L2
Q3
Q4
CIN
Q1
Q2
D1
D2
L1
CO
L2 t2 t3
Q3
Q4
CIN
Q1
Q2
D1
D2
L1
CO
L2 t1 t2
Gate, Q1
Gate, Q2
IO=IL1+IL2
Gate, Q3
Gate, Q4
VP
IP
IL1
IL2
VL2
VL1
t0 t1
t2 t3 t4
Q3
Q4
CIN
Q1
Q2
D1
D2
L1
CO
L2 t0 t1
Current Doubler Timing Diagram (PSFB Application)
Current doubler benefits:
• Better thermal distribution for
higher current outputs
• Each inductor carries half the load
current at half the switching
frequency
• Ripple currents cancel as a
function of D
• Single winding secondary
71. 71
Choosing the “best” topology:
• Is the output voltage higher or lower than the input voltage range?
• Are there isolation requirements?
• Are multiple outputs required?
• AC input – PFC/THD requirements?
• Output power?
• What is the maximum input/output voltage?
• What is the maximum input/output current?
Fine tune topology choice by trading off:
• Efficiency
• Performance
• Cost
• Size
Q&A?
Summary