SPICE MODEL of 2SJ380 (Professional+BDP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: MOSFET (Professional)
PART NUMBER: 2SJ380
MANUFACTURER: TOSHIBA
REMARK: P Channel Model
Body Diode (Professional) / ESD Protection Diode
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
1

2. Equivalent Circuit
D
S
- -
+ +
R3
S2 10MEG DGD
R1 CGD
10M S1
+ +
- -
S M1
G
S
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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3. MOSFET MODEL
Pspice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Modility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
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4. Transconductance Characteristic
Circuit Simulation Result
Comparison table
gfs
-Id(A) Error(%)
Measurement Simulation
-0.2 1.553 1.527 -1.674
-0.5 2.434 2.392 -1.726
-1 3.360 3.356 -0.119
-2 4.625 4.684 1.276
-5 7.077 7.205 1.809
-10 9.714 9.891 1.822
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5. Vgs-Id Characteristic
Circuit Simulation result
-10A
-1.0A
-300mA
0V -1.0V -2.0V -3.0V -4.0V -5.0V -6.0V
I(V3)
V_V1
Evaluation circuit
V3
0Vdc
U1
V2
-5
2SJ380
V1
-3.5
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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6. Comparison Graph
Circuit Simulation Result
Simulation Result
-VGS(V)
-ID(A) Error (%)
Measurement Simulation
0.05 1.654 1.712 3.507
0.1 1.734 1.768 1.961
0.2 1.830 1.846 0.874
0.5 1.992 2.002 0.502
1 2.155 2.180 1.160
2 2.375 2.435 2.526
5 2.835 2.949 4.021
10 3.415 3.546 3.836
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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7. Rds(on) Characteristic
Circuit Simulation result
-6.0A
-4.0A
-2.0A
0A
0V -0.5V -1.0V -1.5V -2.0V
I(V2)
V_V3
Evaluation circuit
V2
0Vdc
U1
V3
0Vdc
2SJ380
V1
-10
0
Simulation Result
ID=-6 A, VGS=-10V Measurement Simulation Error (%)
R DS (on) () 0.150 0.156 4.000
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8. Gate Charge Characteristic
Circuit Simulation result
-10V
-5V
0V
0 20n 40n 55n
V(W1:4)
Time*1mA
Evaluation circuit
U1
W
- 2SJ380
+ I2
D1
W1 Dbreak -12
IOFF = 100uA
I1 TD = 0 ION = 0
TF = 10n ROFF = 1e6
PW = 200u RON = 1.0 V1
PER = 500u
I1 = 0
I2 = 1m -80
TR = 10n
0
Simulation Result
VDD=-80V,ID=-12A
,VGS=-10V
Measurement Simulation Error (%)
Qgs(nc) 7.0000 7.0606 0.866
Qgd(nc) 21.000 20.901 -0.471
Qg(nc) 55.000 55.000 0.000
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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9. Capacitance Characteristic
Measurement
Simulation
Simulation Result
Cbd(pF)
VDS(V) Error(%)
Measurement Simulation
0.1 950 943 -0.737
0.2 850 852 0.235
0.5 670 680 1.493
1 530 533 0.566
2 400 395 -1.250
5 260 254 -2.308
10 180 178 -1.111
20 120 123 2.500
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
9

10. Switching Time Characteristic
Circuit Simulation result
-20V
-10V
0V
1.9us 2.0us 2.1us 2.2us 2.3us
V(U1:G) V(U1:D)/5
Time
Evaluation circuit
L1 R2
50nH
8.3
U1
L2
V1
30nH
V1 = 0 V2 2SJ380
V2 = -10 R4 -50
TD = 2u
TR = 4n 50
TF = 4n
PW = 10u
PER = 30u
0
Simulation Result
ID=-6A, VDD=-50V
VGS=-10V
Measurement Simulation Error(%)
Ton(ns) 30.000 29.976 -0.080
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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11. Output Characteristic
Circuit Simulation result
-20A
-10 V -8 V
-6 V
-16A -4 V
-12A
-3.5 V
-8A
-3 V
-4A
-2.5 V
VGS=-2.0 V
0A
0V -5V -10V
I(V3)
V_V2
Evaluation circuit
V3
0Vdc
U1
V2
V1 2SJ380 -10
-2
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
11

12. BODY DIODE SPICEMODEL
Forward Current Characteristic
Circuit Simulation Result
-10A
-1.0A
-300mA
0V 0.2V 0.4V 0.6V 0.8V 1.0V
-I(R1)
V_V1
Evaluation Circuit
R1
0.01m
U1
V1
0Vdc
2SJ380
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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13. Comparison Graph
Circuit Simulation Result
Simulation Result
VDS(V) VDS(V)
-IDR(A) %Error
Measurement Simulation
0.3 0.670 0.672 0.299
0.5 0.700 0.696 -0.571
1 0.730 0.730 0.000
2 0.765 0.766 0.131
5 0.825 0.824 -0.121
10 0.885 0.885 0.000
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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14. Reverse Recovery Characteristic
Circuit Simulation Result
400mA
200mA
0A
-200mA
-400mA
14.4us 14.8us 15.2us 15.6us 16.0us
I(RL)
Time
Evaluation Circuit
RL
50
U4
D2SJ380
V1 = -9.4 V1
V2 = 10.7
TD = 0
TR = 10n
TF = 10n
PW = 15u
PER = 100u
0
Compare Measurement vs. Simulation
Measurement Simulation Error (%)
Trj(us) 152.000 152.002 0.001
Trb(us) 124.000 124.888 0.716
Trr(us) 276.000 276.890 0.322
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15. Reverse Recovery Characteristic Reference
Trj=152(ns)
Trb=124(ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Example
Example
Relation between trj and trb
Relation between trj and trb
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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16. Zener Voltage Characteristic
Circuit Simulation Result
10mA
5mA
0A
0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V
I(R1)
V_V1
Evaluation Circuit
U1
R1
R2
0.01m
1G
2SJ380
V1
0Vdc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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17. Zener Voltage Characteristic Reference
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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