This document summarizes the modeling and characterization of the NEC 2SC3632 transistor. It includes PSpice model parameters, measurements and simulations of key transistor characteristics like gain, saturation voltage, switching times and output characteristics. Graphs compare measurement data to simulation results with good agreement. The report establishes an accurate model for representing this transistor in circuit simulations.

1. Device Modeling Report
COMPONENTS: TRANSISTOR
PART NUMBER: 2SC3632
MANUFACTURER: NEC
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

2. TRANSISTOR MODEL
PSpice
model Model description
parameter
IS Saturation Current
BF Ideal Maximum Forward Beta
NF Forward Current Emission Coefficient
VAF Forward Early Voltage
IKF Forward Beta Roll-off Knee Current
ISE Non-ideal Base-Emitter Diode Saturation Current
NE Non-ideal Base-Emitter Diode Emission Coefficient
BR Ideal Maximum Reverse Beta
NR Reverse Emission Coefficient
VAR Reverse Early Voltage
IKR Reverse Beta Roll-off Knee Current
ISC Non-ideal Base-Collector Diode Saturation Current
NC Non-ideal Base-Collector Diode Emission Coefficient
NK Forward Beta Roll-off Slope Exponent
RE Emitter Resistance
RB Base Resistance
RC Series Collector Resistance
CJE Zero-bias Emitter-Base Junction Capacitance
VJE Emitter-Base Junction Potential
MJE Emitter-Base Junction Grading Coefficient
CJC Zero-bias Collector-Base Junction Capacitance
VJC Collector-base Junction Potential
MJC Collector-base Junction Grading Coefficient
Coefficient for Onset of Forward-bias Depletion
FC
Capacitance
TF Forward Transit Time
XTF Coefficient for TF Dependency on Vce
VTF Voltage for TF Dependency on Vce
ITF Current for TF Dependency on Ic
PTF Excess Phase at f=1/2pi*TF
TR Reverse Transit Time
EG Activation Energy
XTB Forward Beta Temperature Coefficient
XTI Temperature Coefficient for IS
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

3. Reverse
Reverse Early Voltage Characteristic
Ic
VAR
Vce
Y=aX+b
(X1,Y1)
(X2,Y2)
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

4. Reverse DC Beta Characteristic (Ie vs. hFE)
Measurement
Simulation
Emitter Current
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

5. Forward
Forward Early Voltage Characteristic
Ic (X2,Y2)
Y=aX+b (X1,Y1)
Vce
VAF
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

6. C-B Capacitance Characteristics
Measurement
Simulation
E-B Capacitance Characteristics
Measurement
Simulation
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

7. Transistor hFE-IC Characteristics
Circuit simulation result
1.0K
100
10
1.0
10mA 100mA 1.0A
I(vsence)/ IB(Q1)
I(vsence)
Evaluation circuit
v sence
0Vdc
Q1
Q2SC3632
V1
6Vdc
I1
0Adc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

8. Comparison Graph
Circuit simulation result
1000
Measurement
Simulation
DC CURRENT GAIN hFE
100
10
1
0.01 0.1 1
COLLECTOR CURRENT IC (A)
Simulation result
hFE
Ic(A) Error (%)
Measurement Simulation
0.01 50.000 49.874 -0.252
0.02 53.000 53.023 0.043
0.05 55.000 52.300 -4.909
0.1 47.200 45.017 -4.625
0.2 30.000 29.916 -0.280
0.5 7.000 7.320 4.571
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

9. VCE(Sat)-IC Characteristics
Circuit simulation result
3.0V
1.0V
100mV
10mV
3.0mV
5.0mA 10mA 100mA
V(Q1:c)
IC(Q1)
Evaluation circuit
VC
Q1
Q2SC3632
F1
F
I1 5
0Adc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

10. Comparison Graph
Circuit simulation result
10
Measurement
COLLECTOR−EMITTE R SATURATION
Simulation
VOLTAGE, VCE (sat) (V)
1
0.1
0.01
0.001 0.01 0.1
COLLECTOR CURRENT IC (A)
Simulation result
VCE(sat)(V)
IC(A) Error (%)
Measurement Simulation
0.005 0.045 0.0454 0.889
0.01 0.046 0.0466 1.304
0.02 0.050 0.0499 -0.200
0.05 0.060 0.0608 1.333
0.1 0.080 0.0798 -0.250
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

11. VBE(Sat)-IC Characteristics
Circuit simulation result
3.0V
1.0V
100mV
30mV
10mA 100mA 500mA
V(Q1:b)
IC(Q1)
Evaluation circuit
VC
Q1
Q2SC3632
F1
F
I1 5
0Adc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

12. Comparison Graph
Circuit simulation result
10
Measurement
BASE−EMITTER SATURATION VOLTAGE
Simulation
1
VBE (sat) (V)
0.1
0.01
0.01 0.1 1
COLLECTOR CURRENT IC (A)
Simulation result
VBE(sat)(V)
IC(A) Error (%)
Measurement Simulation
0.01 0.640 0.642 0.313
0.1 0.745 0.740 -0.671
0.5 0.920 0.926 0.652
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

13. Switching Characteristics
Circuit simulation result
500mA
250mA
0A
-200mA
97.5us 99.0us 100.5us 103.5us 106.5us 109.5us
IC(Q1) IB(Q1)
Time
Evaluation circuit
L1 R3
R1
50nH 500
L2
99.99
Q1
R2 Q2SC3632
50nH
V1 = -3.93
V1 V2
V2 = 11 45.1 250V
TD = 1us
TR = 50ns
TF = 50ns
PW = 100us
PER = 200us
0
Simulation result
Measurement Simulation Error (%)
tstg (us) 4.000 3.999 -0.025
tf (us) 0.200 0.199 -0.500
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

14. Output Characteristics
Circuit simulation result
100mA
80mA
60mA
1.0mA
40mA
0.8mA
0.6mA
20mA
0.4mA
IB=0.2mA
0A
0V 2V 4V 6V 8V 10V
IC(Q1)
V_V1
Evaluation circuit
Q1
Q2SC3632
5Vdc
I1 V1
120uA
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

15. Output Characteristics Reference
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007