SPICE MODEL of 2SK2409 (Professional+BDP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: MOSFET (Professional Model)
PART NUMBER: 2SK2409
MANUFACTURER: NEC Corporation
REMARK: Body Diode (Professional) /
ESD Protection Diode
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

2. MOSFET MODEL PARAMETERS
PSpice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

3. Transconductance Characteristics
Circuit Simulation Result
30
Measurement
Simulation
25
Transconductance -Gfs (s)
20
15
10
5
0
0 2 4 6 8 10 12
Drain Curent -Id (A)
Comparison table
gfs(s)
Id(A) Error(%)
Measurement Simulation
1.000 7.813 7.874 0.787
2.000 10.811 10.811 0.000
5.000 16.835 16.077 -4.502
10.000 22.222 21.231 -4.459
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

4. Vgs-Id Characteristics
Circuit Simulation Result
1.0KA
100A
10A
1.0A
100mA
0V 2V 4V 6V 8V 10V
I(V2)
V_VGS
Evaluation circuit
V2
U1
2sk2409
VDD
VGS 10Vdc
0Vdc
0 0 0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

5. Comparison Graph
Circuit Simulation Result
1000
Measurement
Simulation
100
Drain Current - ID (A)
10
1
0.1
0 5 10
Gate to Source Voltage - VGS (V)
Comparison table
VGS(V)
ID(A) Error (%)
Measurement Simulation
1.000 2.000 1.994 -0.300
2.000 2.080 2.103 1.106
5.000 2.350 2.392 1.787
10.000 2.620 2.601 -0.725
20.000 3.000 3.014 0.467
50.000 3.850 3.935 2.208
100.000 5.180 5.000 -3.475
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

6. *Rds(on) Characteristic
Circuit Simulation result
20A
18A
16A
14A
12A
10A
8A
6A
4A
2A
0A
0V 0.2V 0.4V 0.6V 0.8V 1.0V
I(V2)
V_VDD
Evaluation circuit
V2
U1
2sk2409
VDD
10Vdc
VGS
10Vdc
0 0
0
Simulation Result
ID=20A, VGS=10V Measurement Simulation Error (%)
R DS (on) 22 m 22.022 m 0.100
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

7. Gate Charge Characteristic
Circuit Simulation result
10V
8V
6V
4V
2V
0V
0s 20us 40us 60us 80us 100us
V(W1:3)
Time
Evaluation circuit
Vsense
I1
D1
U1 Dbreak 40Adc
2SK2409
W1
+
-
I2 W VD
ION = 0A 48Vdc
IOFF = 1.1mA
0
Simulation Result
VDD=48V,ID=40A
Measurement Simulation Error (%)
,VGS=-10V
Qgs 5.00 nC 5.22 nC 4.400
Qgd 25.00 nC 25.00 nC 0.640
Qg 7.30 nC 7.31 nC 0.137
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

8. Capacitance Characteristic
Measurement
Simulation
Simulation Result
Cbd(pF)
VDS(V) Error(%)
Measurement Simulation
1 1550 1500 0.065
2 1340 1320 0.075
5 1020 1030 0.098
10 770 775 0.130
20 560 550 0.179
50 350 340 0.286
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

9. Switching Time Characteristic
Circuit Simulation result
14V
13V
12V
11V
10V
9V
8V
7V
6V
5V
4V
3V
2V
1V
0V
0.8us 1.0us 1.2us 1.4us 1.6us
V(L3:2) I(Vsense)/2
Time
Evaluation circuit
Vsense RL
3
1.5
V1 = 0
R1 L3
V2 = 10 2
U1
10 30nH
TD = 1u 2sk2409 VD
30.5Vdc
TR = 10n V1
TF = 10n
PW = 5u
PER = 10u
0
Simulation Result
ID=20A, VDD=30V
Measurement Simulation Error(%)
VGS=0/10V
td(on) 30 ns 30.01 ns 0.063
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

10. Output Characteristic
Circuit Simulation result
100A
10.0V
6.0V
80A
4.0V
60A
40A
20A
0A
0V 2V 4V 6V 8V 10V 12V 14V 16V
I(V2)
V_VDD
Evaluation circuit
V2
U1
2sk2409
VDS
10Vdc
VGS
10Vdc
0 0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

11. BODY DIODE SPICE MODEL
Forward Current Characteristic
Circuit Simulation Result
1.0KA
100A
10A
1.0A
100mA
0V 1.0V 2.0V 3.0V
I(V2)
V_VDS
Evaluation Circuit
V2
VGS
0Vdc
VDS
0Vdc U1
2sk2409
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

12. Comparison Graph
Circuit Simulation Result
1000
Measurement
Simulation
ISD-Diode Forward Current - A
100
10
1
0
0 1 2 3
VDS-Source to Drain Voltage-V
Simulation Result
VDS(V)
ISD(A) Measurement Simulation %Error
1.000 0.675 0.675 0.000
2.000 0.705 0.704 -0.142
5.000 0.770 0.758 -1.558
10.000 0.830 0.823 -0.843
20.000 0.940 0.927 -1.383
50.000 1.250 1.202 -3.840
100.000 1.700 1.630 -4.118
170.000 2.300 2.155 -6.304
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

13. Reverse Recovery Characteristic
Circuit Simulation Result
400mA
300mA
200mA
100mA
-0mA
-100mA
-200mA
-300mA
-400mA
5.5us 5.7us 5.9us 6.1us 6.3us 6.5us
I(R1)
Time
Evaluation Circuit
R1
50
V1 = -9.5V
V2 = 10.6
TD = 78n V1 U1
TR = 10n D2SK2409_PRO
TF = 10n
PW = 5.7u
PER = 100us
0
Compare Measurement vs. Simulation
Measurement Simulation Error (%)
trj 57.200 ns 56.710 ns -0.857
trb 152.000 ns 151.360 ns -0.421
trr 209.200 ns 208.070 ns -0.540
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

14. Reverse Recovery Characteristic Reference
Trj=57.2(ns)
Trb=152(ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

15. ESD PROTECTION DIODE SPICE MODEL
Zener Voltage Characteristic
Circuit Simulation Result
1.0mA
0.9mA
0.8mA
0.7mA
0.6mA
0.5mA
0.4mA
0.3mA
0.2mA
0.1mA
0A
0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V
I(V2)
V_VGS
Evaluation Circuit
V2
U1
2SK2409
ID
0Adc
VGS
0Vdc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

16. Zener Voltage Characteristic Reference
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006