DG1E60 PSpice Model (Free SPICE Model)

1. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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COMPONENTS:
DIODE/ GENERAL PURPOSE RECTIFIER/ STANDARD
PART NUMBER: DG1E60
MANUFACTURER: SHINDENGEN
Device Modeling Report
Bee Technologies Inc.

2. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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SPICE MODEL
Circuit Configuration
*$
* PART NUMBER: DG1E60
* MANUFACTURER: SHINDENGEN
* VRM=600, IO=10uA, IFSM=25A
* All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
.MODEL DG1E60 D
+ IS=1.6537E-9
+ N=1.7190
+ RS=27.613E-3
+ IKF=2.8694
+ CJO=19.384E-12
+ M=.36271
+ VJ=.3905
+ ISR=0
+ BV=600
+ IBV=10.000E-6
+ TT=3.4281E-6
*$
DG1E60
(1) (2)

3. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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DIODE MODEL PARAMETERS
PSpice model
parameter
Model description
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap

4. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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V_V1
0V 0.5V 1.0V 1.5V
I(R1)
100mA
1.0A
10A
Forward Current Characteristic
Circuit Simulation Result
Evaluation Circuit
D1
DG1E60
R1
0.01m
V1
0Vdc
0

5. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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0.1
1
10
0 0.5 1 1.5
ForwardcurrentIF(A)
Forward voltage VF (V)
Measurement
Simulation
Comparison Graph
Circuit Simulation Result
Simulation Result
Ifwd (A)
Vfwd (V)
%Error
Measurement Simulation
0.1 0.800 0.800 0.02
0.2 0.835 0.834 -0.08
0.5 0.885 0.886 0.08
1 0.935 0.934 -0.08
2 1.000 1.000 0.00
4 1.100 1.100 0.00

6. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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V(N11503)
0V 20V 40V 60V 80V 100V
I(V2)/(600V/1u)
1.0p
10p
100p
Capacitance Characteristic
Circuit Simulation Result
Evaluation Circuit
D1
DG1E60
V2
0Vdc
V1TD = 0
TF = 50ns
PW = 5us
PER = 10us
V1 = 0
TR = 1u
V2 = 600V
0

7. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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1
10
100
0 10 20 30 40 50 60 70 80 90 100
JunctioncapacitanceCj(pF)
Reverse Voltage VR (V)
Measurement
Simulation
Comparison Graph
Circuit Simulation Result
Simulation Result
Vrev (V)
Cj (pF)
%Error
Measurement Simulation
0.1 17.639 16.993 -3.66
0.2 16.736 16.71 -0.16
0.5 14.342 14.379 0.26
1 12.242 12.211 -0.25
2 10.027 10.041 0.14
5 7.451 7.485 0.46
10 5.839 5.892 0.91
20 4.567 4.617 1.09
50 3.409 3.325 -2.46
100 2.652 2.587 -2.45

8. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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Time
4us 8us 12us 16us 20us 24us 28us 32us 36us 40us
I(R1)
-400mA
-300mA
-200mA
-100mA
-0mA
100mA
200mA
300mA
400mA
Reverse Recovery Characteristic
Circuit Simulation Result
Evaluation Circuit
Compare Measurement vs. Simulation
Measurement Simulation %Error
trj us 1.20 1.19 -0.46
0
R1
50
V2TD = 1us
TF = 12ns
PW = 20us
PER = 50us
V1 = -9.1V
TR = 10ns
V2 = 10.8V
D2
DG1E60

9. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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Reverse Recovery Characteristic Reference
Trj = 1.20 (us)
Trb= 1.80 (us)
Conditions: Ifwd=0.2A,Irev=0.2A, Rl=50
Relation between trj and trb
Example