R&D of New Technology Using Simulation by Bee Technologies

1. R&D of New Technology
Using Simulation
Bee Technologies
Tsuyoshi Horigome
25MAR2014

2. Business Summary
We provide R&D of New Technology for
(1)R&D of Product Innovation(Next Generation Product)
(2)R&D of Projects of New Technologies
(3)R&D of Solve problems
Using Key Technologies(R&D of Equivalent Circuit and Device Modeling,
Theory Simulation)
Market
Social Infrastructure
Solar System
Smart Grid
Electric Vehicle (EV),
Hybrid Electric Vehicle(HEV)
Fuel Cell Car
New Technology
Next Generation of
Device

3. R&D process
Example
Customer: Auto Manufacturer
Order :
R&D of Theory for next generation of
Hybrid Electric Vehicle(HEV)
How to increase Power?
How to decrease Energy?

4. R&D of Thinking Process
STEP1
• Circuit Method Approach
• Idea of Circuit Method
STEP2
• Behavior of Device Method Approach
• Idea of Equivalent Circuit of Semiconductor
• Idea of Equivalent Circuit of Passive Parts
STEP3
• Conclusion of Theory
• Evaluate of Idea using Simulation
• Report of R&D
Inductor
IGBT:55%
Input Capacitor
FWD

5. Circuit Method
Approach
Thinking of
Topology
Thinking of Circuit
Method using
electrical and
electronic Theory
Thinking of Circuit
Modeling
Create Equivalent
Circuit from Idea
Evaluation of
Equivalent Circuit
using Mathematics
level
If Idea is OK, Next
implement create
Control Signal
Method
Evaluation of
Equivalent Circuit
using Circuit level
Simulation
Idea transfer
Equivalent Circuit
STEP1 R&D of Circuit Method Approach

6. STEP1 R&D of Circuit Method Approach
Topology TopologyOptimize Control Signal

7. Behavior of Device
Method Approach
Thinking of Switching
Device of Theory using
Device Process
Thinking of IGBT of
Behavior Theory of
Electric Characteristics
Thinking of IGBT of
Transfer Characteristics
of Mathematics and
create Equivalent Circuit
Thinking of IGBT of
Saturation
Characteristics of
Mathematics and create
Equivalent Circuit
Thinking of IGBT of Gate
Charge Characteristics of
Mathematics and create
Equivalent Circuit
Thinking of IGBT of
Swithing Characteristics
of Mathematics and
create Equivalent Circuit
Evaluation of Equivalent
Circuit of IGBT using
Mathematics level
If Idea is OK, Equivalent
Circuit using Circuit level
Simulation
Thinking of FWD of
Forward IV
Characteristics of
Mathematics and create
Equivalent Circuit
Thinking of FWD of
Reverse Recovery
Characteristics of
Mathematics and create
Equivalent Circuit
Thinking of –didt
Method
Evaluation of Equivalent
Circuit of FWD using
Mathematics level
If Idea is OK, Equivalent
Circuit of FWD using
Circuit level Simulation
Idea connect between
IGBT and FWD
Thinking of Switching
loss of IGBT and FWD
using Circuit Simulation
Evaluation idea of
theory of switching loss
using Circuit Simulation
If idea want to high level
using Optimize Method
for Power loss(Switching
Loss)
Next Step Thinking of
idea for increase
power(Energy concert)
Thinking of Core and coil
using Material Science ,
Electro Dynamics ,
Mathematics and
Impedance analysis.
Idea convert to
Equivalent Circuit and
evaluate idea using
Circuit Simulation.
Idea of energy
conversion efficiency
estimate calculation
using simulation
STEP2 R&D of Behavior of Device Method Approach

8. STEP2 R&D of Behavior of Device Method Approach
IGBT
Input MOSFET
M1
MFIN
Q1
QOUT
RE
E
DDS
DO
81
DBE
DE
85
RC
8.3m
C
RG
G
82
CGE
83 83
VC
0Vdc
IN+
IN-
OUT+
OUT-
E1
EVALUE
C2
C1
0
R1
100MEG
CGD
1
S1
MSW
R2
100MEG
D1
DGD
S2
MSW
2
Idea of Equivalent Circuit
IGBT Process Theory
Idea of Function of IGBT using Mathematics
Transfer Characteristics
Output Characteristics
・
・
・
・
・
Gate Charge Characteristics

9. STEP3 Conclusion
Inductor
IGBT:55%
Input Capacitor
FWD
Simiulation
Simiulation
Simiulation Simiulation
Condition: Vout=342V, ILoad=40A,
Freq=10kHz
- Power Loss Chart