SPICE MODEL of GT20J321 (Professional+FWD+SP LTspice Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: Insulated Gate Bipolar Transistor (IGBT)
PART NUMBER: GT20J321
MANUFACTURER: TOSHIBA
* REMARK: Free-Wheeling Diode Special Model
Bee Technologies Inc.
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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2. Circuit Configuration
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3. Transfer Characteristics
Circuit Simulation result
Evaluation circuit
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4. Comparison Graph
Simulation result
Comparison table
Test condition: VCE =5 (V)
VGE (V)
IC (A) %Error
Measurement Simulation
1 6.300 6.355 0.87
2 6.600 6.551 -0.75
5 7.000 6.953 -0.68
10 7.450 7.427 -0.31
20 8.100 8.138 0.47
30 8.650 8.716 0.76
40 9.200 9.226 0.28
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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5. Fall Time Characteristics
Circuit Simulation result
Time
Evaluation circuit
Test condition: IC=20 (A), VCC=300 (V), VGE=15 (V), RG=33(Ω)
Parameter Unit Measurement Simulation %Error
tf us 0.040 0.040 -0.497
tdoff us 0.240 0.245 2.266
toff us 0.340 0.348 2.429
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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6. Gate Charge Characteristics
Circuit Simulation result
Evaluation circuit
Test condition: VCC=300 (V), IC=20 (A), VGE=15 (V)
Parameter Unit Measurement Simulation %Error
Qge nc 22.000 21.858 -0.645
Qgc nc 38.000 37.195 -2.118
Qg nc 105.000 106.576 1.501
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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7. Saturation Characteristics
Circuit Simulation result
Evaluation circuit
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8. Comparison Graph
Simulation result
Comparison table
Test condition: VGE =15 (V)
VCE (V)
Ic(A) %Error
Measurement Simulation
1 0.950 0.997 4.99
2 1.050 1.086 3.38
5 1.300 1.301 0.10
10 1.600 1.597 -0.18
20 2.050 2.052 0.11
30 2.400 2.398 -0.07
40 2.700 2.700 0.01
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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9. Output Characteristics
Circuit Simulation result
20V 15V 9V
8V
VGE=7V
Evaluation circuit
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10. FWD Forward Current Characteristics
Circuit Simulation result
Evaluation circuit
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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11. Comparison Graph
Simulation result
Comparison table
VF (V)
IF(A) %Error
Measurement Simulation
1 0.850 0.850 0.00
2 0.950 0.947 -0.29
5 1.110 1.115 0.47
10 1.300 1.298 -0.14
20 1.560 1.562 0.12
30 1.780 1.774 -0.33
40 1.960 1.963 0.17
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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12. Reverse Recovery Characteristics
Circuit Simulation result
Evaluation circuit
Test condition: VCC=300 (V), IF=20 (A) –di/dt=100 A/usec
Parameter Unit Measurement Simulation %Error
trr ns 110.000 110.800 0.727
Irr A 4.300 4.294 -0.133
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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