SPICE MODEL of SCS110AG , TC=-25degree , LTspice (Standard Model) in SPICE PARK

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SPICE MODEL of SCS110AG , TC=-25degree , LTspice (Standard Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

Tecnología

Device Modeling Report

COMPONENTS: Silicon Carbide Schottky Diode
PART NUMBER: SCS110AG_-25c
MANUFACTURER: ROHM
REMARK: Standard Model
REPORT:(LTspice IV)

Bee Technologies Inc.

All Rights Reserved Copyright (C) Bee Technologies Inc. 2010

Spice model
Model description
parameter
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap

All Rights Reserved Copyright (C) Bee Technologies Inc. 2010

Forward Current Characteristic

Circuit Simulation Result

Evaluation Circuit

All Rights Reserved Copyright (C) Bee Technologies Inc. 2010

Comparison Graph

Circuit Simulation Result

100.000
Measurement
Simulation

10.000
FORWARD CURRENT: IF(A)

1.000

0.100

0.010

0.001
0.0 0.5 1.0 1.5 2.0 2.5
FORWARD VOLTAGE: VF(V)

Simulation Result

VF(V)
IF(A) Error (%)
Measurement Simulation
0.001 0.9500 0.9471 -0.30
0.01 1.0100 1.0070 -0.30
0.1 1.0700 1.0695 -0.05
0.2 1.0900 1.0908 0.07
0.5 1.1250 1.1244 -0.05
1 1.1600 1.1589 -0.09
2 1.2050 1.2100 0.41
5 1.3300 1.3332 0.24
10 1.5100 1.5170 0.46
15 1.7000 1.6933 -0.39

All Rights Reserved Copyright (C) Bee Technologies Inc. 2010

Junction Capacitance Characteristic

Circuit Simulation Result

Evaluation Circuit

All Rights Reserved Copyright (C) Bee Technologies Inc. 2010

Comparison Graph

Circuit Simulation Result

1000
Measurement
CAPACITANCE BETWEEN TERMINAL: Ct(pF)

Simulation

100

10

1
0.1 1 10 100
REVERSE VOLTAGE:VR(V)

Simulation Result

C (pF)
VR(V) Error (%)
Measurement Simulation
0.1 495.522 500.945 1.09
0.2 478.484 484.972 1.36
0.5 432.707 437.279 1.06
1 381.755 382.943 0.31
2 315.733 317.098 0.43
5 227.287 228.635 0.59
10 170.646 171.457 0.48
20 125.176 125.891 0.57
50 82.750 82.216 -0.65
100 60.545 59.210 -2.20

All Rights Reserved Copyright (C) Bee Technologies Inc. 2010

Reverse Recovery Characteristic

Circuit Simulation Result

Time (s)

Evaluation Circuit

Compare Measurement vs. Simulation

Measurement Simulation Error (%)
trj ns 7.500 7.468 -0.42

All Rights Reserved Copyright (C) Bee Technologies Inc. 2010

Reverse Recovery Characteristic Reference

Measurement

Trj =7.5(ns)
Trb=16.0(ns)
Conditions: Ifwd=0.2A, Irev=0.2A, Rl=50Ω

Example

Relation between trj and trb

All Rights Reserved Copyright (C) Bee Technologies Inc. 2010

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SPICE MODEL of SCS110AG , TC=-25degree , LTspice (Standard Model) in SPICE PARK

1. Device Modeling Report COMPONENTS: Silicon Carbide Schottky Diode PART NUMBER: SCS110AG_-25c MANUFACTURER: ROHM REMARK: Standard Model REPORT:(LTspice IV) Bee Technologies Inc. All Rights Reserved Copyright (C) Bee Technologies Inc. 2010

2. Spice model Model description parameter IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap All Rights Reserved Copyright (C) Bee Technologies Inc. 2010

4. Comparison Graph Circuit Simulation Result 100.000 Measurement Simulation 10.000 FORWARD CURRENT: IF(A) 1.000 0.100 0.010 0.001 0.0 0.5 1.0 1.5 2.0 2.5 FORWARD VOLTAGE: VF(V) Simulation Result VF(V) IF(A) Error (%) Measurement Simulation 0.001 0.9500 0.9471 -0.30 0.01 1.0100 1.0070 -0.30 0.1 1.0700 1.0695 -0.05 0.2 1.0900 1.0908 0.07 0.5 1.1250 1.1244 -0.05 1 1.1600 1.1589 -0.09 2 1.2050 1.2100 0.41 5 1.3300 1.3332 0.24 10 1.5100 1.5170 0.46 15 1.7000 1.6933 -0.39 All Rights Reserved Copyright (C) Bee Technologies Inc. 2010

6. Comparison Graph Circuit Simulation Result 1000 Measurement CAPACITANCE BETWEEN TERMINAL: Ct(pF) Simulation 100 10 1 0.1 1 10 100 REVERSE VOLTAGE:VR(V) Simulation Result C (pF) VR(V) Error (%) Measurement Simulation 0.1 495.522 500.945 1.09 0.2 478.484 484.972 1.36 0.5 432.707 437.279 1.06 1 381.755 382.943 0.31 2 315.733 317.098 0.43 5 227.287 228.635 0.59 10 170.646 171.457 0.48 20 125.176 125.891 0.57 50 82.750 82.216 -0.65 100 60.545 59.210 -2.20 All Rights Reserved Copyright (C) Bee Technologies Inc. 2010

7. Reverse Recovery Characteristic Circuit Simulation Result Time (s) Evaluation Circuit Compare Measurement vs. Simulation Measurement Simulation Error (%) trj ns 7.500 7.468 -0.42 All Rights Reserved Copyright (C) Bee Technologies Inc. 2010

8. Reverse Recovery Characteristic Reference Measurement Trj =7.5(ns) Trb=16.0(ns) Conditions: Ifwd=0.2A, Irev=0.2A, Rl=50Ω Example Relation between trj and trb All Rights Reserved Copyright (C) Bee Technologies Inc. 2010

SPICE MODEL of SCS110AG , TC=-25degree , LTspice (Standard Model) in SPICE PARK

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SPICE MODEL of SCS110AG , TC=-25degree , LTspice (Standard Model) in SPICE PARK