The document is a device modeling report for a SiC Schottky Barrier Diode from ROHM with part number SCS215AG. It contains the diode model parameters, simulation results for forward and reverse current characteristics, and junction capacitance characteristics. Comparison tables show good agreement between measurement and simulation results with errors generally less than 5%.

1. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
1
Device Modeling Report
Bee Technologies Inc.
COMPONENTS: SiC Schottky Barrier Diode
PART NUMBER: SCS215AG
MANUFACTURER: ROHM
REAMARK: POFESSIONAL MODEL

2. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
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Circuit Configuration
DIODE MODEL PARAMETERS
PSpice
model
parameter
Model description
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap

3. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
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R1
0.01m
V1
0Vdc
0
R2
1MEG
U1
SCS215AG_P
V_V1
0V 0.5V 1.0V 1.5V 2.0V 2.5V
I(R1)
1.0mA
10mA
100mA
1.0A
10A
100A
Forward Current Characteristics
Circuit Simulation result
Evaluation circuit

4. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
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Comparison Graph
Circuit Simulation result
Comparison table
IF (A)
VF (V)
%Error
Measurement Simulation
0.001 0.700 0.696 -0.57
0.01 0.760 0.756 -0.53
0.1 0.820 0.818 -0.24
1 0.900 0.902 0.22
2 0.940 0.948 0.85
5 1.060 1.054 -0.57
10 1.200 1.208 0.67
20 1.500 1.493 -0.47
50 2.300 2.300 0.00

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0
V1
TD = 0
TF = 500ns
PW = 100us
PER = 500us
V1 = 0
TR = 10us
V2 = 650
V2
0Vdc
R1
1MEG
U1
SCS215AG_P
V(N16650)
10mV 100mV 1.0V 10V 100V 1.0KV
I(V2)/(650V/10us)
10p
100p
1.0n
Junction Capacitance Characteristic
Circuit Simulation result
Evaluation circuit

6. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
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Comparison Graph
Circuit Simulation result
Comparison table
VR (V)
CT (pF)
%Error
Measurement Simulation
0.01 780.000 776.700 -0.42
0.1 730.000 736.700 0.92
1 550.000 547.100 -0.53
10 230.000 221.000 -3.91
20 165.000 159.700 -3.21
50 111.000 107.300 -3.33
100 85.000 83.100 -2.24
200 66.000 67.500 2.27
600 54.000 53.400 -1.11

7. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
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V1
0Vdc
R1
100m
0
R2
1MEG
U1
SCS215AG_P
V_V1
0V 200V 400V 600V
I(R1)
10nA
100nA
1.0uA
10uA
100uA
Reverse Characteristic
Circuit Simulation result
Evaluation circuit

8. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
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Comparison Graph
Circuit Simulation result
Comparison table
IR (uA)
VR (V)
%Error
Measurement Simulation
0.01 406.0 397.1 -2.19
0.1 486.0 487.3 0.27
2.1 600.0 598.8 -0.20