SPICE MODEL of SSM6J409TU (Professional+BDP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. All Rights Reserved Copyright (c) Bee Technologies Inc. 2009
1
Device Modeling Report
Bee Technologies Inc.
COMPONENTS: MOSFET (Professional Model)
PART NUMBER: SSM6J409TU
MANUFACTURER: TOSHIBA
REMARK: Body Diode (Professional Model) /
ESD Protection Diode

2. All Rights Reserved Copyright (c) Bee Technologies Inc. 2009
2
MOSFET MODEL
PSpice model
parameter
Model description
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility

3. All Rights Reserved Copyright (c) Bee Technologies Inc. 2009
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0
10
20
30
40
50
0.0 5.0 10.0 15.0 20.0
gfs(S)
Drain Current ID (-A)
Measurement
Simulation
Transconductance Characteristic
Circuit Simulation Result
Comparison table
- Id(A)
gfs(S)
Error (%)
Measurement Simulation
0.2 6.400 6.118 -4.41
0.5 9.700 9.321 -3.91
1 13.000 12.663 -2.59
2 16.800 16.963 0.97
5 24.000 24.281 1.17
10 30.500 31.025 1.72
20 37.500 38.614 2.97

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V_VGS
0V -0.5V -1.0V -1.5V -2.0V
I(VD_Sense)
0A
-2A
-4A
-6A
-8A
-10A
-12A
-14A
-16A
-18A
-20A
Vgs-Id Characteristic
Circuit Simulation result
Evaluation circuit
VDS
-3Vdc
VD_Sense
0Vdc
VGS
0
U1
SSM6J409TU

5. All Rights Reserved Copyright (c) Bee Technologies Inc. 2009
5
0.00
2.00
4.00
6.00
8.00
10.00
12.00
14.00
16.00
18.00
20.00
0.0 0.5 1.0 1.5 2.0
DrainCurrentID(-A)
Gate - Source Voltage VGS (-V)
Measurement
Simulation
Comparison Graph
Circuit Simulation Result
Simulation Result
-ID(A)
-VGS(V)
Error (%)
Measurement Simulation
0.2 0.840 0.880 4.80
0.5 0.890 0.919 3.26
1 0.950 0.964 1.51
2 1.040 1.032 -0.81
5 1.200 1.176 -2.02
10 1.370 1.356 -1.06
20 1.650 1.641 -0.56

6. All Rights Reserved Copyright (c) Bee Technologies Inc. 2009
6
U1
SSM6J409TU
VGS
-4.5Vdc
VD_Sense
0Vdc
VDS
-0Vdc
0
V_VDS
0V -20mV -40mV -60mV
I(VD_Sense)
0A
-1.0A
-2.0A
-3.0A
Rds(on) Characteristic
Circuit Simulation result
Evaluation circuit
Simulation Result
ID = -3A, VGS = -4.5V Measurement Simulation Error (%)
RDS (on) m 17.800 17.800 0.00

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Time*-1mA
0 -5n -10n -15n -20n -25n -30n
V(W1:4)
0V
-1.0V
-2.0V
-3.0V
-4.0V
-5.0V
-6.0V
-7.0V
-8.0V
Gate Charge Characteristic
Circuit Simulation result
Evaluation circuit
Simulation Result
VDD=-10V, ID=-9.5A,
VGS=-4.5V
Measurement Simulation Error (%)
Qgs nC 2.000 2.016 0.80
Qgd nC 4.250 4.259 0.22
Qg nC 15.000 14.988 -0.08
I1
TD = 0
TF = 10n
PW = 600u
PER = 1000u
I1 = 0
I2 = 1m
TR = 10n
-
+
W1
ION = 0uA
IOFF = 0.1mA
W
0
I2
9.5Adc
D1
Dbreak
V1
-10Vds
V2
0Vdc
U1
SSM6J409TU

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Capacitance Characteristic
Simulation Result
VSD (V)
Cbd (pF)
Error (%)
Measurement Simulation
0.1 340.000 347.750 2.28
0.2 305.000 319.950 4.90
0.5 255.000 263.200 3.22
1 210.000 210.500 0.24
2 160.000 158.400 -1.00
5 100.000 101.760 1.76
10 70.000 70.690 0.99
20 50.000 48.450 -3.10
Simulation
Measurement

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Time
1.84us 1.92us 2.00us 2.08us 2.16us 2.24us
V(L1:2) V(L2:2)/4
0V
-0.5V
-1.0V
-1.5V
-2.0V
-2.5V
-3.0V
-3.5V
-4.0V
Switching Time Characteristic
Circuit Simulation result
Evaluation circuit
Simulation Result
ID=-2.0A, VDD=-10V
VGS=0/-2.5V
Measurement Simulation Error(%)
ton ns 40.000 39.998 -0.01
V2
TD = 2u
TF = 1n
PW = 10u
PER = 2000u
V1 = 0
TR = 1n
V2 = 5
V1
-10Vdc
L2
50nH
L1
30nH
R2
5
R1
4.7
U1
SSM6J409TU
0
RG
4.7

10. All Rights Reserved Copyright (c) Bee Technologies Inc. 2009
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V_VDS
0V -0.2V -0.4V -0.6V -0.8V -1.0V
I(VD_Sense)
0A
-4A
-8A
-12A
-16A
-20A
Output Characteristic
Circuit Simulation result
Evaluation circuit
U1
SSM6J409TU
VGS
VD_Sense
0Vdc
VDS
-1Vdc
0
VGS=-4.5V
-1.5
-1.8-2.5

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V_V1
0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V
I(R1)
1.0mA
10mA
100mA
1.0A
10A
100A
Forward Current Characteristic
Circuit Simulation Result
Evaluation Circuit
V1
0Vdc
R1
0.01m
0
U1
SSM6J409TU

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0.0
0.0
0.1
1.0
10.0
0 0.2 0.4 0.6 0.8 1 1.2
DrainreversecurrentIDR(A)
Source - Drain voltage VDS (V)
Measurement
Simulation
Comparison Graph
Circuit Simulation Result
Simulation Result
IDR(A)
VDS(V)
%Error
Measurement Simulation
0.001 0.345 0.345 0.00
0.01 0.420 0.421 0.27
0.1 0.500 0.501 0.29
0.2 0.525 0.529 0.84
0.5 0.570 0.574 0.65
1 0.615 0.615 0.03
2 0.660 0.663 0.50
5 0.740 0.738 -0.30
10 0.815 0.808 -0.83
20 0.900 0.904 0.42

13. All Rights Reserved Copyright (c) Bee Technologies Inc. 2009
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Time
0.2us 0.6us 1.0us 1.4us 1.8us 2.2us
I(R1)
-400mA
-300mA
-200mA
-100mA
-0mA
100mA
200mA
300mA
400mA
0
V1
TD = 18n
TF = 5.7ns
PW = 1us
PER = 50us
V1 = -9.5V
TR = 10ns
V2 = 10.5V
R1
50 U1
DSSM64J409TU_P
Reverse Recovery Characteristics
Circuit Simulation Result
Evaluation Circuit
Compare Measurement vs. Simulation
Characteristics Unit Measurement Simulation Error (%)
trj ns 24.000 23.544 -1.90
trb ns 132.000 131.746 -0.19
trr ns 156.000 155.290 -0.46

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Reverse Recovery Characteristic Reference
Trj=24.00(ns)
Trb=132.00(ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Relation between trj and trb
Example
Measurement

15. All Rights Reserved Copyright (c) Bee Technologies Inc. 2009
15
V_V1
0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V
I(R1)
0A
1mA
2mA
3mA
4mA
5mA
6mA
7mA
8mA
9mA
10mA
ESD PROTECTION DIODE SPICE MODEL
Zener Voltage Characteristic
Circuit Simulation Result
Evaluation Circuit
open
Ropen
100MEG
0
openopen
openopen
R1
0.01m
V1
0Vdc
0
U1
SSM6J409TU

16. All Rights Reserved Copyright (c) Bee Technologies Inc. 2009
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Zener Voltage Characteristic Reference