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All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
1
Device Modeling Report
Bee Technologies Inc.
COMPONENTS: MOSFET (Professional Model)
PART NUMBER: TPH4R606NH
MANUFACTURER: TOSHIBA
REMARK: Body Diode (Professional Model)
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
2
MOSFET MODEL
PSpice model
parameter
Model description
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
3
Transconductance Characteristics
Circuit Simulation result
Comparison table
ID (A)
gfs (S)
%Error
Measurement Simulation
2 13.226 13.299 0.55
5 22.450 22.507 0.25
10 32.790 32.691 -0.30
20 47.550 47.627 0.16
50 78.980 78.947 -0.04
60 87.650 87.477 -0.20
VDS=10V
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
4
V_VGS
0V 1.0V 2.0V 3.0V 4.0V 5.0V 6.0V
I(U1:5)
0A
12A
24A
36A
48A
60A
VGS
V1
10V
0
U1
TPH4R606NH
Vgs-Id Characteristics
Circuit Simulation result
Evaluation circuit
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
5
Comparison Graph
Circuit Simulation result
Comparison table
ID (A)
VGS (V)
%Error
Measurement Simulation
1 3.885 3.918 0.86
2 3.966 3.999 0.83
5 4.172 4.160 -0.31
10 4.345 4.337 -0.18
20 4.607 4.584 -0.50
50 5.033 5.059 0.52
60 5.138 5.179 0.80
VDS=10V
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
6
VGS
10V
0
V1
U1
TPH4R606NH
V_V1
0V 10mV 20mV 30mV 40mV 50mV 60mV 70mV 80mV
I(U1:5)
0A
4A
8A
12A
16A
20A
Rds(on) Characteristics
Circuit Simulation result
Evaluation circuit
Test condition: VGS=10(V), ID=16(A)
Parameter Unit Measurement Simulation %Error
RDS(on) mΩ 3.800 3.798 -0.05
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
7
V_V1
0V 0.4V 0.8V 1.2V 1.6V 2.0V
I(U1:5)
0A
8A
16A
24A
32A
40A
VGS
0
V1
U1
TPH4R606NH
Output Characteristics
Circuit Simulation result
Evaluation circuit
VGS = 4.4V
4.5
6.510
5
5.5 5.2
4.6
4.7
4.8
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
8
Capacitance Characteristics
Simulation result
Comparison table
VDS (V)
Cbd (pF)
%Error
Measurement Simulation
0.1 2900.000 2860.580 -1.36
0.2 2850.000 2838.000 -0.42
0.5 2790.000 2770.000 -0.72
1 2650.000 2668.000 0.68
2 2390.000 2480.000 3.77
5 2070.000 2054.230 -0.76
10 1600.000 1596.100 -0.24
20 1170.000 1115.000 -4.70
50 550.000 575.290 4.60
Simulation
Measurement
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
9
Time*1mA
0 10n 20n 30n 40n 50n 60n 70n 80n
V(W1:3)
0V
5V
10V
15V
20V
25V
30V
U1
TPH4R606NH D1
dmod
ID
32A
VDD
48V
0
-
+
W1
ION = 0
IOFF = 100uA
WIGTD = 0
TF = 10n
PW = 10m
PER = 1
I1 = 0
I2 = 1m
TR = 10n
Gate Charge Characteristics
Circuit Simulation result
Evaluation circuit
Test condition: VDD=48(V), VGS=10(V), ID=32(A)
Parameter Unit Measurement Simulation %Error
Qgs nC 14.143 14.152 0.06
Qgd nC 18.000 17.903 -0.54
Qg nC 52.143 51.938 -0.39
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
10
Time
1.8us 1.9us 2.0us 2.1us 2.2us 2.3us
V(U1:5)/3 V(U1:4)
0V
5V
10V
15V
L1
30nH
1 2
U1
TPH4R606NH
R1
4.7
V1TD = 2u
TF = 4n
PW = 5u
PER = 500u
V1 = 0
TR = 4n
V2 = 20
VDD
30
0
RL
1.88
L2
50nH
12
R2
4.7
Switching Time Characteristics
Circuit Simulation result
Evaluation circuit
Test condition: VDD=30(V), VGS=0/10(V), ID=32(A), RG=4.7, RL=1.88
Parameter Unit Measurement Simulation %Error
ton ns 24.000 24.089 0.37
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
11
V_VDS
0V -0.2V -0.4V -0.6V -0.8V -1.0V -1.2V
I(VDS)
100mA
1.0A
10A
100A
1.0KA
0
VDS U1
TPH4R606NH
Body Diode Forward Current Characteristics
Circuit Simulation result
Evaluation circuit
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
12
Comparison Graph
Simulation result
Comparison table
IDR (A)
-VDS (V)
%Error
Measurement Simulation
0.1 0.659 0.655 -0.61
0.2 0.672 0.670 -0.30
0.5 0.687 0.690 0.44
1 0.706 0.707 0.13
2 0.728 0.726 -0.22
5 0.755 0.759 0.53
10 0.792 0.789 -0.38
20 0.825 0.826 0.12
50 0.895 0.891 -0.45
100 0.965 0.966 0.10
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
13
Time
0.7us 0.9us 1.1us 1.3us 1.5us 1.7us
I(R1)
-400mA
-300mA
-200mA
-100mA
-0mA
100mA
200mA
300mA
400mA
0
V1TD = 0ns
TF = 10ns
PW = 1us
PER = 100us
V1 = -9.4V
TR = 10ns
V2 = 10.65V
R1
50
U1
DTPH4R606NH_P
Reverse Recovery Characteristics
Circuit Simulation result
Evaluation circuit
Comparison Measurement vs. Simulation
Parameter Unit Measurement Simulation %Error
trj ns 25.600 25.450 -0.59
trb ns 193.000 193.35 0.18
trr ns 218.600 218.800 0.09
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
14
Reverse Recovery Characteristics Reference
trj = 25.6(ns)
trb = 193(ns)
Conditions: Ifwd = lrev = 0.2(A), Rl = 50
Relation between trj and trb
Example
Measurement

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SPICE MODEL of TPH4R606NH (Professional+BDP Model) in SPICE PARK

  • 1. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 1 Device Modeling Report Bee Technologies Inc. COMPONENTS: MOSFET (Professional Model) PART NUMBER: TPH4R606NH MANUFACTURER: TOSHIBA REMARK: Body Diode (Professional Model)
  • 2. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 2 MOSFET MODEL PSpice model parameter Model description LEVEL L Channel Length W Channel Width KP Transconductance RS Source Ohmic Resistance RD Ohmic Drain Resistance VTO Zero-bias Threshold Voltage RDS Drain-Source Shunt Resistance TOX Gate Oxide Thickness CGSO Zero-bias Gate-Source Capacitance CGDO Zero-bias Gate-Drain Capacitance CBD Zero-bias Bulk-Drain Junction Capacitance MJ Bulk Junction Grading Coefficient PB Bulk Junction Potential FC Bulk Junction Forward-bias Capacitance Coefficient RG Gate Ohmic Resistance IS Bulk Junction Saturation Current N Bulk Junction Emission Coefficient RB Bulk Series Resistance PHI Surface Inversion Potential GAMMA Body-effect Parameter DELTA Width effect on Threshold Voltage ETA Static Feedback on Threshold Voltage THETA Mobility Modulation KAPPA Saturation Field Factor VMAX Maximum Drift Velocity of Carriers XJ Metallurgical Junction Depth UO Surface Mobility
  • 3. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 3 Transconductance Characteristics Circuit Simulation result Comparison table ID (A) gfs (S) %Error Measurement Simulation 2 13.226 13.299 0.55 5 22.450 22.507 0.25 10 32.790 32.691 -0.30 20 47.550 47.627 0.16 50 78.980 78.947 -0.04 60 87.650 87.477 -0.20 VDS=10V
  • 4. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 4 V_VGS 0V 1.0V 2.0V 3.0V 4.0V 5.0V 6.0V I(U1:5) 0A 12A 24A 36A 48A 60A VGS V1 10V 0 U1 TPH4R606NH Vgs-Id Characteristics Circuit Simulation result Evaluation circuit
  • 5. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 5 Comparison Graph Circuit Simulation result Comparison table ID (A) VGS (V) %Error Measurement Simulation 1 3.885 3.918 0.86 2 3.966 3.999 0.83 5 4.172 4.160 -0.31 10 4.345 4.337 -0.18 20 4.607 4.584 -0.50 50 5.033 5.059 0.52 60 5.138 5.179 0.80 VDS=10V
  • 6. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 6 VGS 10V 0 V1 U1 TPH4R606NH V_V1 0V 10mV 20mV 30mV 40mV 50mV 60mV 70mV 80mV I(U1:5) 0A 4A 8A 12A 16A 20A Rds(on) Characteristics Circuit Simulation result Evaluation circuit Test condition: VGS=10(V), ID=16(A) Parameter Unit Measurement Simulation %Error RDS(on) mΩ 3.800 3.798 -0.05
  • 7. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 7 V_V1 0V 0.4V 0.8V 1.2V 1.6V 2.0V I(U1:5) 0A 8A 16A 24A 32A 40A VGS 0 V1 U1 TPH4R606NH Output Characteristics Circuit Simulation result Evaluation circuit VGS = 4.4V 4.5 6.510 5 5.5 5.2 4.6 4.7 4.8
  • 8. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 8 Capacitance Characteristics Simulation result Comparison table VDS (V) Cbd (pF) %Error Measurement Simulation 0.1 2900.000 2860.580 -1.36 0.2 2850.000 2838.000 -0.42 0.5 2790.000 2770.000 -0.72 1 2650.000 2668.000 0.68 2 2390.000 2480.000 3.77 5 2070.000 2054.230 -0.76 10 1600.000 1596.100 -0.24 20 1170.000 1115.000 -4.70 50 550.000 575.290 4.60 Simulation Measurement
  • 9. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 9 Time*1mA 0 10n 20n 30n 40n 50n 60n 70n 80n V(W1:3) 0V 5V 10V 15V 20V 25V 30V U1 TPH4R606NH D1 dmod ID 32A VDD 48V 0 - + W1 ION = 0 IOFF = 100uA WIGTD = 0 TF = 10n PW = 10m PER = 1 I1 = 0 I2 = 1m TR = 10n Gate Charge Characteristics Circuit Simulation result Evaluation circuit Test condition: VDD=48(V), VGS=10(V), ID=32(A) Parameter Unit Measurement Simulation %Error Qgs nC 14.143 14.152 0.06 Qgd nC 18.000 17.903 -0.54 Qg nC 52.143 51.938 -0.39
  • 10. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 10 Time 1.8us 1.9us 2.0us 2.1us 2.2us 2.3us V(U1:5)/3 V(U1:4) 0V 5V 10V 15V L1 30nH 1 2 U1 TPH4R606NH R1 4.7 V1TD = 2u TF = 4n PW = 5u PER = 500u V1 = 0 TR = 4n V2 = 20 VDD 30 0 RL 1.88 L2 50nH 12 R2 4.7 Switching Time Characteristics Circuit Simulation result Evaluation circuit Test condition: VDD=30(V), VGS=0/10(V), ID=32(A), RG=4.7, RL=1.88 Parameter Unit Measurement Simulation %Error ton ns 24.000 24.089 0.37
  • 11. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 11 V_VDS 0V -0.2V -0.4V -0.6V -0.8V -1.0V -1.2V I(VDS) 100mA 1.0A 10A 100A 1.0KA 0 VDS U1 TPH4R606NH Body Diode Forward Current Characteristics Circuit Simulation result Evaluation circuit
  • 12. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 12 Comparison Graph Simulation result Comparison table IDR (A) -VDS (V) %Error Measurement Simulation 0.1 0.659 0.655 -0.61 0.2 0.672 0.670 -0.30 0.5 0.687 0.690 0.44 1 0.706 0.707 0.13 2 0.728 0.726 -0.22 5 0.755 0.759 0.53 10 0.792 0.789 -0.38 20 0.825 0.826 0.12 50 0.895 0.891 -0.45 100 0.965 0.966 0.10
  • 13. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 13 Time 0.7us 0.9us 1.1us 1.3us 1.5us 1.7us I(R1) -400mA -300mA -200mA -100mA -0mA 100mA 200mA 300mA 400mA 0 V1TD = 0ns TF = 10ns PW = 1us PER = 100us V1 = -9.4V TR = 10ns V2 = 10.65V R1 50 U1 DTPH4R606NH_P Reverse Recovery Characteristics Circuit Simulation result Evaluation circuit Comparison Measurement vs. Simulation Parameter Unit Measurement Simulation %Error trj ns 25.600 25.450 -0.59 trb ns 193.000 193.35 0.18 trr ns 218.600 218.800 0.09
  • 14. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 14 Reverse Recovery Characteristics Reference trj = 25.6(ns) trb = 193(ns) Conditions: Ifwd = lrev = 0.2(A), Rl = 50 Relation between trj and trb Example Measurement