This document summarizes the modeling of a SiC Schottky Barrier Diode with part number TRS12E65C from Toshiba. It includes the diode model parameters, comparison of simulated and measured forward and reverse characteristics, and junction capacitance. The simulation results match the measurements well with errors generally under 5% validating the accuracy of the diode model.
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SPICE MODEL of TRS12E65C (Professional Model) in SPICE PARK
1. Device Modeling Report
COMPONENTS: SiC Schottky Barrier Diode
PART NUMBER: TRS12E65C
MANUFACTURER: TOSHIBA
REMARK: Professional Model
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All Rights Reserved Copyright (C) Bee Technologies Inc. 2013
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2. Circuit Configuration
DIODE MODEL PARAMETERS
PSpice
model
parameter
IS
N
RS
IKF
CJO
M
VJ
ISR
BV
IBV
TT
EG
Model description
Saturation Current
Emission Coefficient
Series Resistance
High-injection Knee Current
Zero-bias Junction Capacitance
Junction Grading Coefficient
Junction Potential
Recombination Current Saturation Value
Reverse Breakdown Voltage(a positive value)
Reverse Breakdown Current(a positive value)
Transit Time
Energy-band Gap
All Rights Reserved Copyright (C) Bee Technologies Inc. 2013
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3. Forward Current Characteristics
Circuit Simulation result
10A
1.0A
100mA
0V
0.5V
1.0V
1.5V
2.0V
I(R1)
V_V1
Evaluation circuit
R1
0.01m
V1
U1
TRS12E65C
0Vdc
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2013
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