Resistance switching materials and devices

Resistance Switching Materials
and Devices
Patent Landscape by Blaise Mouttet
3/21/2014 1

Quick Links to Companies
• 4D-S Ltd.
• Adesto Technologies
• Axon Technologies
• Contour Semiconductor
• Crossbar, Inc.
• Elpida Memory, Inc.
• Hewlett-Packard Co.
• IBM
• Intel Corporation
• Intermolecular, Inc.
• Macronix International
• Micron Technology, Inc.
• Ovonyx, Inc.
3/21/2014 2
• Panasonic
• Qimonda Ag
• Samsung Electronics Co., Ltd.
• Sandisk
• Seagate Technology
• Sharp
• SK Hynix
• Sony Corporation
• Spansion LLC
• Symetrix Corp.
• Toshiba
• Unity Semiconductor

Quick Links to Graphs/Tables
• Patented Resistance Switching Materials
• Patented Resistance Switching Applications
• Top Assignees
• Other Notable Companies/Start-Ups
• Top Academic Patent Assignees
• Top Assignees vs. Patent Expiration Years
• Materials vs. Patent Expiration Years
• Assignees vs. Claimed Resistance Switching Material
• Assignees vs. Claimed Metal Oxide ReRAM Material
• Assignees vs. Claimed Silicon-Based ReRAM Material
• Assignees vs. Claimed Carbon-Based ReRAM Material
• Assignees vs. Claimed Application
3/21/2014 3

Scope of Patent Landscape
• Results include issued US Patents spanning from the 1960s until
February 25, 2014. Foreign patents and pre-grant published
applications were not included.
• Primary focus of patents collected is PCRAM (phase change), ReRAM
(metal oxide), CBRAM (ionic/electrolytic), and other non-volatile
memory materials based on a resistance switching effect.
• Patents claiming MRAM or a magnetic material for resistance switching
were excluded except in cases where an independent claim was broad
enough to encompass PCRAM, ReRAM, or CBRAM.
• Optically (e.g. laser) driven resistance switching materials were
excluded except in cases where an independent claim was broad
enough to encompass electrically driven resistance switching.
3/21/2014 4

3/21/2014 5
25 31 38 62 65 113 122 224 242 194 162 25
1 4 6 12 10 11 14 45 60 53 101 7
4 17 24 26 23 31 14 35 24 35 33 4
8 13 18 8 5 3 2 2 6
2 2 4 10 9 15 1
1 5 2 8 3 5 2 3
1 1 3 1 6 1 4 2
1 1 3 3 7 1
3 2 1
3 2 1
2002 2004 2006 2008 2010 2012 2014
Patented Resistance Switching Materials
(Granted US Patents, Jan. 2003-Feb. 2014)
phase change
metal oxide
ionic/electrolytic (e.g. metal doped chalcogenide,
CBRAM)
molecular or polymer
elemental carbon (e.g. graphene, nanotube)
nanoparticles
organic
silicon-based
metal nitride
other
Notes: 1)Some overlap exists between categories such as ionic/electrolytic and metal oxides when oxygen vacancies
act as ions. 2)The categorization was determined based on how the material was claimed in the patent. 3)The
ionic/electrolytic category primarily includes the metal doped chalcogenides used in CBRAM.

3/21/2014 6
1 1 2 4 3 9 6 5 12 1
2 1 5 1 6 4 4 5 9 1 5
1 1 4 4 5 9
2 3 5 1 5 4
1 3 2 3 1 1 1 3
1 1 4 2 1
1 2 2 1
1 4 2 1
1 1
2002 2004 2006 2008 2010 2012 2014
Patented Resistance Switching Applications
3D stacking
logic/computation
3-terminal device
neuromorphic
encoder/decoder/mux
electromagnetic/radio wave (e.g. RFID)
microcontroller/signal processing
test circuit
error correction
Notes: the categorization is based on a claimed application other than just memory or manufacturing memory

3/21/2014 7
5 9 9 22 24 53 69 99 110 108 70 9
18 30 39 49 40 40 29 45 44 62 78 16
1 3 8 5 29 61 73 100
1 4 8 10 9 21 31 32 51 44 21 2
1 8 2 13 25 24 41 31 36 7
1 8 2 13 25 24 41 31 36 7
1 4 3 3 4 21 34 36 56 3
3 7 6 27 22 35 42 7
3 9 29 24 37 29 11 3
10 5 20 6 14 10 1 3 12 18 35 1
1 2 4 10 15 33 55 1
1 5 13 18 14 10 8 8 9 5 15 2
15 42 30 18 1
7 7 1 4 10 5 7 7 13 6 11 2
4 6 5 3 7 2 8 21
3 11 16 12 7 3 1
2 4 4 6 5 4 7 8 3 1
2002 2004 2006 2008 2010 2012 2014
Top Assignees for Resistance Switching Materials
Samsung
Micron
Toshiba
Macronix
Ovonyx
IBM
SK Hynix
Sandisk
Qimonda
Hewlett Packard
Panasonic
Sharp/Xenogenic LLC
Seagate
Intel
Sony
Elpida
Spansion

3/21/2014 8
5 12 21 5 13 5 8 17 9 8 1
1 2 7 15 29 6
4 3 6 6 1 4 3 4
7 18 5
1 2 2 4 3 3 1 2 2 3
1 1 1 3 2 3 3
2 3
1 1 1
2002 2004 2006 2008 2010 2012 2014
Other Notable Companies or Start-ups for Resistance Switching Materials
Unity Semiconductor
Intermolecular, Inc.
Adesto Technologies
Crossbar, Inc.
Axon Technologies
Contour Semiconductor
4D-S Ltd.
Symetrix

3/21/2014 9
2 1 2 1
2 3
1 1 1 1
1 1 2
1 1 1
3
2 1
1 1
1 1
2002 2004 2006 2008 2010 2012 2014
Academic Institutions having Resistance Switching Material Patents
Korea Institute of Science and Technology
University of California
Stanford
Boise State University
Yonsei University
Seoul National University
University of Pennsylvania
University of Houston
University of Michigan

Top Assignees vs. Patent Expiration
Years
3/21/2014 10
Count of Publication Number Expiration Year
Current Assignee 2015 2016 2017 2018 2019 2020 2021 2022 2023 2024 2025 2026 2027 2028 2029 2030 2031 2032Expired Grand Total
Samsung Electronics Co., Ltd. 6 6 2 9 41 65 55 86 85 83 74 50 19 8 589
Micron Technology, Inc. 1 9 2 4 65 68 38 31 58 27 16 45 41 45 32 9 2 493
Toshiba 1 11 2 5 1 10 30 74 63 69 18 2 286
Ovonyx, Inc. 2 3 16 2 4 17 24 16 23 16 22 19 10 21 20 10 5 17 247
Macronix International Co. Ltd. 10 10 17 13 43 53 25 28 21 13 1 234
International Business Machines 3 7 18 17 21 27 36 23 18 7 13 190
Hynix Semiconductor Inc 1 4 3 7 7 28 37 34 35 9 165
Sandisk 3d Llc 2 3 1 14 8 22 15 30 31 17 6 149
Qimonda Ag 6 23 29 26 34 17 6 2 1 1 145
Hewlett-packard Company 7 2 5 8 9 3 19 5 3 1 20 23 18 4 10 137
Panasonic Corporation 3 2 2 12 23 21 36 21 1 121
Seagate Technology 11 67 25 2 1 106
Unity Semiconductor Corporation 14 27 15 2 7 3 10 5 13 4 2 2 104
Intel Corporation 9 8 7 4 8 10 7 10 4 6 4 3 1 81
Round Rock Research, Llc 8 36 11 4 1 4 4 4 1 73
Xenogenic Development LLC 5 6 17 12 12 7 3 4 66
Intermolecular, Inc. 4 5 24 5 15 7 60
Sony Corporation 1 1 2 10 9 3 1 8 9 9 4 57
Elpida Memory, Inc. 1 1 10 10 9 7 7 7 1 53
Spansion Llc 6 3 3 8 5 9 3 7 44
Renesas Electronics Corporation 3 8 10 10 4 2 1 1 2 2 43
Sharp 1 2 1 2 2 9 3 2 5 8 6 1 42
Stmicroelectronics Inc. 1 5 3 2 4 2 2 9 8 5 1 42
Adesto Technologies 7 6 4 2 7 1 2 2 31
Crossbar, Inc. 11 16 3 30
Industrial Technology Research Institute 1 6 5 3 4 5 4 2 30
Infineon Technologies 1 1 10 9 3 3 1 1 29
Axon Technologies 19 2 1 1 1 1 1 1 27
Notes: patent expiration years were estimated assuming maintenance fees will be paid, already expired patent
includes patents which prematurely expired based on a failure to pay a maintenance fee

Materials vs. Patent Expiration Years
3/21/2014 11Notes: patent expiration years were estimated assuming maintenance fees will be paid, already expired patent
includes patents which prematurely expired based on a failure to pay a maintenance fee
Count of Publication Number Expiration Year
Row Labels 2015 2016 2017 2018 2019 2020 2021 2022 2023 2024 2025 2026 2027 2028 2029 2030 2031 2032Expired Grand Total
(blank) 8 28 29 2 10 12 55 68 104 79 139 166 180 210 366 307 274 84 34 2155
phase change 3 20 7 2 1 22 27 32 50 96 142 125 167 194 179 132 74 24 47 1344
metal oxide 1 1 2 8 9 14 20 21 46 52 50 49 42 9 3 327
ionic/electrolytic (e.g. metal doped
chalcogenide, CBRAM) 22 3 1 1 34 44 17 13 36 13 9 19 29 16 15 5 3 280
molecular/polymer 8 6 18 11 3 3 5 1 2 2 2 12 73
carbon 1 2 2 3 3 14 11 6 1 1 44
nanoparticles 1 8 4 3 3 2 3 3 1 1 2 31
silicon 1 1 1 2 2 6 3 2 9 27
organic 1 1 6 4 5 1 1 19
metal nitride 3 2 1 6
metal hydride 2 2
hydrogen 2 2
porous 1 1
titanium alloy 1 1
metal alloy 1 1
ceramic 1 1
Grand Total 11 71 37 9 21 41 137 163 191 210 351 338 415 490 647 527 416 126 113 4314

Assignee vs. Claimed Resistance
Switching Material
3/21/2014 12
Current Assignee (blank) phase
change
metal oxide ionic/electrolytic
(e.g. metal doped
chalcogenide,
CBRAM)
molecular/poly
mer
carbon nanoparticles silicon organic metal
nitride
metal
hydride
Samsung Electronics Co., Ltd. 257 275 34 6 11 1 1 4
Micron Technology, Inc. 234 112 9 132 1 5
Toshiba 243 15 17 4 4 1 2
Ovonyx, Inc. 80 167
Macronix International Co. Ltd. 126 94 12 2
International Business Machines 59 110 10 4 2 2
Hynix Semiconductor Inc 33 125 5 1 1
Sandisk 3d Llc 100 7 19 20 2
Qimonda Ag 98 39 1 3 1 1 1 1
Hewlett-packard Company 82 7 3 13 25 3 3 1
Panasonic Corporation 66 2 51 1 1
Seagate Technology 85 4 1 15
Unity Semiconductor Corporation 77 24 3
Intel Corporation 12 68 1
Round Rock Research, Llc 48 20 5
Xenogenic Development LLC 36 29 1
Intermolecular, Inc. 22 37 1
Sony Corporation 42 1 12 1 1
Elpida Memory, Inc. 24 29
Spansion Llc 35 1 8
Renesas Electronics Corporation 22 21
Sharp 30 9 2 1
Stmicroelectronics Inc. 12 28 1 1
Adesto Technologies 11 18 2
Crossbar, Inc. 21 1 8
Industrial Technology Research Institute
10 13 1 2 4
Infineon Technologies 19 7 1 1 1
Axon Technologies 27

Assignee vs. Claimed Metal Oxide
ReRAM material
3/21/2014 13
Current Assignee (blank) perovskite
crystal
structure
(e.g. PCMO,
SrZrO3,
LaNiO3)
tantalum
oxide
nickel
oxide
titanium
oxide
hafnium
oxide
copper
oxide
iron
oxide
aluminum
oxide
zirconium
oxide
vanadium
oxide
ZnMnO tungst
en
oxide
NiCoO magnesium
oxide
tin oxide Grand Total
Panasonic Corporation 37 9 2 3 51
Intermolecular, Inc. 30 2 2 2 1 37
Samsung Electronics Co., Ltd. 28 1 3 2 34
Xenogenic Development LLC 1 28 29
Unity Semiconductor Corporation 23 1 24
Sandisk 3d Llc 15 1 1 1 1 19
Toshiba 17 17
Macronix International Co. Ltd. 11 1 12
International Business Machines 7 2 1 10
Sharp 7 1 1 9
Micron Technology, Inc. 8 1 9
Fujitsu Limited 5 1 1 7
4d-s Ltd. 5 5
Hynix Semiconductor Inc 5 5
National Institute Of Advanced
Industrial Science And Technology 3 1 4
Winbond Electronics Corp. 2 2 4
Nec Corporation 2 1 1 4
Hewlett-packard Company 3 3

Assignee vs. Claimed Silicon-Based
ReRAM Material
3/21/2014 14
Current Assignee (blank) silicon-
carbon
alloy
silicon
oxide
silicon
carbide
doped
polysilicon
crystalline
silicon
amorphous
silicon
Grand
Total
Crossbar, Inc. 8 8
Dow Corning Corporation 4 4
Toshiba 1 1 2
British Telecommunications Public Limited Company 2 2
National University Corporation Tokyo University Of Agriculture And Technology 1 1
British Petroleum Company P.l.c., The 1 1
National Institute Of Advanced Industrial Science And Technology 1 1
Nxp B.v. 1 1
Callahan Cellular L.l.c. 1 1
Qimonda Ag 1 1
Semiconductor Energy Laboratory Co., Ltd. 1 1
Energy Conversion Devices, Inc. 1 1
University Of Michigan 1 1
Matsushita Electric Industrial Co., Ltd. 1 1
Grand Total 5 1 5 1 1 1 13 27

Assignee vs. Claimed Carbon-Based
ReRAM Material
3/21/2014 15
Current Assignee (blank) nanotube graphene Grand
Total
Sandisk 3d Llc 11 7 2 20
Toshiba 3 1 4
Energy Conversion Devices, Inc. 1 1
Industry-university Cooperation Foundation 1 1
Symetrix Corporation 1 1
Infineon Technologies 1 1
Samsung Electronics Co., Ltd. 1 1
Lockheed Martin Corporation 1 1
Stmicroelectronics Inc. 1 1
Applied Materials, Inc. 1 1
The Invention Science Fund I, Llc 1 1
Hynix Semiconductor Inc 1 1
Rising Silicon, Inc. 1 1
Qimonda Ag 1 1
Grand Total 24 13 7 44

Assignee vs. Claimed Application
3/21/2014 16
Current Assignee memory manufacturing process logic/computation 3D stacking neuromorphic 3-terminal device encoder/decoder/mux
Samsung Electronics Co., Ltd. 480 100 1 4 2
Toshiba 273 7 1 4
Ovonyx, Inc. 184 36 12 3 2 3
Macronix International Co. Ltd. 170 60 1 3
International Business Machines 126 46 4 2 6 5
Hynix Semiconductor Inc 128 32 1
Sandisk 3d Llc 99 34 15
Qimonda Ag 137 4 3
Hewlett-packard Company 80 12 13 4 3 5 10
Panasonic Corporation 110 10 1
Seagate Technology 99 6 1
Unity Semiconductor Corporation 93 7 1 1 2
Intel Corporation 64 14 2 1
Round Rock Research, Llc 44 29
Xenogenic Development LLC 34 28 3 1
Intermolecular, Inc. 24 33
Sony Corporation 56 1
Elpida Memory, Inc. 51 2
Spansion Llc 36 6
Renesas Electronics Corporation 42 1
Sharp 39 3
Stmicroelectronics Inc. 28 12 1
Adesto Technologies 25 4 1
Crossbar, Inc. 16 14
Industrial Technology Research Institute 27 3
Infineon Technologies 28 1
Axon Technologies 22 1 1

Samsung - Overview
• Top US patent holder overall for resistance switching
materials (587 patents since 2003)
• Possesses patent for almost every resistance switching
material type (phase change, metal oxide, CBRAM,
molecular/polymer) with a primary interest in PCRAM (275
US patents) and a secondary interest in metal oxide ReRAM
(34 patents). Several molecular resistance switching patents
were obtained from Hewlett-Packard.
• Some variations of nickel oxide and copper oxide ReRAM
have been patented by Samsung.
• Primary application focus is on alternative solution to non-
volatile memory.
3/21/2014 17

Samsung – Patent Distribution for
3/21/2014 18
Count of US patents Patent Year
Claimed resistance switching
material 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012 2013 2014 Grand Total
phase change 1 2 8 19 20 41 40 54 40 35 13 2 275
(blank) 1 2 3 3 9 22 36 57 67 48 7 255
metal oxide 1 2 4 7 10 4 6 34
copper oxide 1 1 2
nickel oxide 1 1 1 3
perovskite crystal structure (e.g.
PCMO, SrZrO3, LaNiO3) 1 1
(blank) 1 2 3 6 9 3 4 28
molecular/polymer 3 5 1 1 1 11
ionic/electrolytic (e.g. metal
doped chalcogenide, CBRAM) 1 1 1 1 2 6
organic 1 1 1 1 4
carbon 1 1
nanotube 1 1
nanoparticles 1 1
Grand Total 5 9 9 22 24 53 69 99 110 108 70 9 587
Notes: 1)Some overlap exists between categories such as ionic/electrolytic and metal oxides when oxygen
vacancies act as ions. 2)The categorization was determined based on how the material was claimed in the
patent. 3)The ionic/electrolytic category primarily includes the metal doped chalcogenides used in CBRAM.

Samsung – Patent Distribution for
Resistance Switching Applications
3/21/2014 19
Claimed Application 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012 2013 2014 Grand Total
memory 2 8 9 20 24 43 55 83 92 81 52 9 478
manufacturing process 3 1 2 10 13 13 16 26 16 100
3D stacking 1 3 4
3-terminal device 1 1 2
test circuit 1 1
digital-to-analog converter 1 1
logic/computation 1 1
Grand Total 5 9 9 22 24 53 69 99 110 108 70 9 587

Samsung – Key US Patents for
Resistance Switching Devices
US Patent
Number
Patent Claim Comments
6456525 A data storage device comprising a resistive cross point array of
memory cells, each memory cell including a memory element;
and a linear resistive element connected in series with the
memory element.
Assignment transferred to Samsung from
Hewlett Packard; a similar resistive cross
point array was disclosed in 1987 by
CalTech researchers in US Patent
4839859 (not considered during the
patent examination).
7417271 An electrode structure, comprising:
a lower electrode;
a first oxide layer formed on the lower electrode, wherein the
first oxide layer is formed of an oxide having a variable oxidation
state;
a second oxide layer formed on the first oxide layer; and
an upper electrode formed on the second oxide layer,
wherein at least one of the first and second oxide layers are
formed of a resistance-varying material.
Claims a bilayer metal oxide ReRAM cell
similar to that popularized in the paper
“The missing memristor found” written
by researchers owned by Hewlett-
Packard. An earlier patent from Sharp
(US6972238) describes a similar
structure (not considered during the
patent examination).
8456889 A semiconductor device, comprising:
a variable resistance layer;
a gate insulating layer on the variable resistance layer; and
a gate on the gate insulating layer, the gate being configured to
induce a channel region, the channel region including the variable
resistance layer.
Appears to include basic claims to a 3-
terminal field effect transistor structure
including variable resistance material in
the channel. Similar to US Patent
4839700 from Caltech (not considered
during the patent examination)
See http://tinytechip.blogspot.com/search?q=memory+resistor+patent+thicket for a further review of
potentially invalid ReRAM and related patents3/21/2014 20

Micron - Overview
• 490 US patents for resistance switching materials
since 2003
• Patents are almost equally divided between
PCRAM (phase change) with 112 patents and
CBRAM with 132 patents along with a few recent
carbon-based ReRAM patents
• Several PCRAM patents originally assigned to
Intel and STMicroelectronics are now assigned to
Micron
• Primary application focus is on alternative
solution to non-volatile memory
3/21/2014 21

Micron – Patent Distribution for
3/21/2014 22
(blank) 11 11 16 23 19 15 16 17 20 28 51 6 233
doped chalcogenide, CBRAM) 3 14 19 21 15 21 8 12 6 5 5 2 131
phase change 4 5 3 5 4 4 3 16 17 25 19 6 111
metal oxide 1 1 4 2 1 9
titanium oxide 1 1
(blank) 1 1 4 2 8
carbon 2 1 1 1 5
graphene 1 1 2
(blank) 2 1 3
molecular/polymer 1 1
Grand Total 18 30 39 49 40 40 29 45 44 62 78 16 490

Micron – Patent Distribution for
3/21/2014 23
memory 11 17 24 33 30 20 25 35 35 38 52 13 333
manufacturing process 7 13 15 16 10 20 4 10 9 24 25 3 156
encoder/decoder/mux 1 1
Grand Total 18 30 39 49 40 40 29 45 44 62 78 16 490

Micron – Key US Patents for Resistance
Switching Devices
US Patent
Number
6891749 A memory element comprising:
a resistance variable material; and
first and second electrodes connected to said resistance variable
material, said first and second electrodes comprising materials
capable of stabilizing said element in a low resistance state.
The resistance switching memory cell is
taught to be stabilized by having
electrodes with different electrochemical
potential. A similar concept was earlier
described in an a patent assigned to
AMD (US6781868).
7700485 A method of forming a resistance variable material, comprising:
plating a metal material onto a chalcogenide material; and
diffusing metal ions from the metal material into the
chalcogenide material to form a resistance variable material.
Relatively early priority date (2001) for a
basic method of manufacturing CBRAM/
programmable metallization cell devices.
8345478 A memory device comprising:
an array of transistor-based non-volatile memory having
emerging non-volatile memory for storing programming data into
the array using sense circuitry.
Surprisingly broad claims for using
ReRAM or PCRAM (i.e. “emerging non-
volatile memory”) to reduce the amount
of sense circuitry required for Flash
memory transistor arrays.
3/21/2014 24
potentially invalid ReRAM and related patents

Toshiba - Overview
since 2003 with 100 issued in 2013 alone
• Most of Toshiba’s patents are not limited to a
specific resistance switch type but PCRAM, metal
oxide ReRAM, and CBRAM variations are included
with some focus on carbon-based ReRAM
solution to non-volatile memory with an
emphasis on 3D stacking solutions
3/21/2014 25

Toshiba – Patent Distribution for
3/21/2014 26
material 2004 2007 2008 2009 2010 2011 2012 2013 2014 Grand Total
(blank) 3 4 5 16 55 70 84 6 243
metal oxide 2 8 1 6 17
(blank) 2 8 1 6 17
phase change 1 1 3 4 1 5 15
doped chalcogenide, CBRAM) 1 2 1 4
carbon 1 1 2 4
nanotube 1 1
(blank) 1 2 3
silicon 1 1 2
silicon oxide 1 1
(blank) 1 1
nanoparticles 1 1
Grand Total 1 3 8 5 29 61 73 100 6 286

Toshiba – Patent Distribution for
3/21/2014 27
Claimed Application 2004 2007 2008 2009 2010 2011 2012 2013 2014 Grand Total
memory 1 3 8 4 26 58 70 97 6 273
manufacturing process 1 2 2 2 7
3D stacking 1 1 1 1 4
test circuit 1 1
Grand Total 1 3 8 5 29 61 73 100 6 286

Toshiba – Key US Patents for
US Patent
Number
7606059 A programmable resistance memory device comprising:
a semiconductor substrate;
at least one cell array, formed above said semiconductor substrate, which comprises
a plurality of bit lines arranged in parallel with each other, a plurality of word lines
arranged in parallel with each other in such a direction as crossing said bit lines, and
memory cells connected between the bit lines and the word lines at cross portions
of the bit lines and the word lines, each said memory cell having a stack structure of
a programmable resistance element and an access element, said programmable
resistance element and an access element, said programmable resistance element
being applied a voltage greater than a certain threshold to develop a high resistance
state or a low resistance state and storing the high resistance state or the low
resistance state in a non-volatile manner, said access element having a resistance
value in an off-state that is ten times or more as high as that in a select state; and
a read/write circuit formed on said semiconductor substrate as underlying said cell
array and connected to the bit lines and word lines through vertical wirings for data
reading and data writing in communication with said cell array.
Patent describes a
type of 3D stacked
ReRAM. A high
number of forward
citations (198) indicate
this patent may have
high technical
importance.
8014188 An electric element, comprising:
a pair of electrodes; and
a plurality of powder-condensed and solidified carbon nanotubes of three-
dimensional network structure which are located between the pair of electrodes.
Includes basic claims
to a carbon-based
form of ReRAM
3/21/2014 28

Macronix - Overview
since 2003
• Mostly focused on PCRAM (phase change) but
some metal oxide and other forms of ReRAM
devices are also patented
• Has partnered with IBM and Infineon in phase
change memory development
solution to non-volatile memory with some focus
on 3D stacking solutions
3/21/2014 29

Macronix – Patent Distribution for
3/21/2014 30
material 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012 2013 2014Grand Total
(blank) 1 2 4 5 4 10 20 14 24 29 13 126
phase change 2 4 5 5 11 11 14 23 11 7 1 94
(blank) 3 4 2 1 1 11
tungsten oxide 1 1
doped chalcogenide, CBRAM) 2 2
Grand Total 1 4 8 10 9 21 31 32 51 44 21 2 234

Macronix – Patent Distribution for
3/21/2014 31
memory 1 8 8 6 18 20 27 36 30 15 1 170
manufacturing process 4 2 3 3 11 5 15 12 4 1 60
3D stacking 2 1 3
Grand Total 1 4 8 10 9 21 31 32 51 44 21 2 234

Macronix – Key US Patents for
US Patent
Number
6579760 A memory device, comprising:
a substrate;
a first plurality of conductive lines on the substrate extending in a first direction;
a second plurality of conductive lines above the first plurality of conductive lines,
and extending in second direction and crossing over the first plurality of conductive
lines at intersections;
a plurality of memory cells at said intersections and in electrical contact with the
first and second pluralities of conductive lines, the memory cells comprising self-
aligned structures including a selection device, and a phase change memory
element.
Describes a self-
alignment technique
to achieve a smaller
memory cell area for
PCRAM. A very large
number of forward
citations (343)
indicates a high
technical importance.
a first electrode and a second electrode;
a metal oxide resistive random access memory element and a buffer layer located
between and electrically coupled to the first and the second electrodes, the
memory element comprising one or more metal oxygen compounds; and
the buffer layer comprising SiO2.
Describes improving
data retention and
cycle endurance for
metal oxide ReRAM by
including a SiO2 buffer
layer.
3/21/2014 32

Ovonyx - Overview
• 218 US patents for resistance switching materials since
2003
• Focused on PCRAM (phase change)
• Several patents (34) owned by Ovonyx were assigned
from Energy Conversion Devices, a company formed by
Stanford Ovshinsky who has been a major contributor
to phase change material research since the 1960’s
• A few patents were obtained from Intel and
STMicroelectronics
• Application focus includes programmable logic (12
patents) using phase change devices
3/21/2014 33

Ovonyx – Patent Distribution for
3/21/2014 34
phase change 9 9 15 12 10 19 11 17 18 17 11 2 150
(blank) 6 8 9 4 2 6 3 7 11 6 6 68
Grand Total 15 17 24 16 12 25 14 24 29 23 17 2 218

Ovonyx – Patent Distribution for
3/21/2014 35
memory 9 11 16 14 8 17 10 18 23 20 15 2 163
logic/computation 1 1 2 1 4 9
3D stacking 1 1 1 3
3-terminal device 1 1 1 3
error correction 1 1 2
ESD protection 1 1
Security device 1 1
neuromorphic 1 1
Grand Total 15 17 24 16 12 25 14 24 29 23 17 2 218

Ovonyx – Key US Patents for
US Patent
Number
6087674 An electrically operated, single-cell memory element comprising:
a volume of memory material comprising a heterogeneous mixture of a
phase-change material and a dielectric material, said phase-change
material programmable to a plurality of detectable resistivity values in
response to an electrical signal, said dielectric material being between
about 60 and 90 percent of said volume of memory material; and
means for delivering said electrical signal to at least a portion of said
volume of memory material.
Early patent originally from
Energy Conversion Devices, has
been cited 706 times by later
patents indicating a high level
of technical importance.
6987688 An integrated circuit chip, comprising:
one or more electrically programmable phase-change memory elements;
one or more latches electrically coupled to said phase-change memory elements; and
a programmable logic device electrically coupled to said latches such that the states
of said latches configure the logic of said programmable logic device.
A basic patent for a
programmable logic device
formed from phase change
memory elements
7936593 An apparatus comprising:
a first material having a first variation of an electrical characteristic with time; and
a second material in electrical series with said first material, said second material
having a second variation of said electrical characteristic with time, said second
variation counteracting said first variation.
Teaches the use of a solid
electrolyte oxide to counteract
the variation of a phase change
chalcogenide over time and
increase memory stability and
retention.
8228719 An apparatus, comprising:
electronic circuitry integrated in a device; and
a thin film electronic switching device configured to receive input signals from the
electronic circuitry and to drive signals off the device, the thin film electronic
switching device including a three-terminal ovonic threshold switch.
A basic patent for 3-terminal
ovonic switch used in
electronics.
3/21/2014
36See http://tinytechip.blogspot.com/search?q=memory+resistor+patent+thicket for a further review of

IBM - Overview
• 188 US patents for resistance switching
materials since 2003
some metal oxide ReRAM (10) and CBRAM (4)
• 15 patents now owned by IBM were originally
assigned to Macronix
• Application focus includes neuromorphic
processing (6 patents) using phase change
devices
3/21/2014 37

IBM – Patent Distribution for
3/21/2014 38
material 2005 2006 2007 2008 2009 2010 2011 2012 2013 2014Grand Total
phase change 1 4 1 8 14 11 22 18 27 4 110
(blank) 2 1 3 8 11 11 10 8 3 57
magnesium oxide 1 1
(blank) 1 3 1 2 7
nanoparticles 2 2
hydrogen 1 1 2
metal nitride 1 1 2
metal alloy 1 1
Grand Total 1 8 2 13 25 24 41 31 36 7 188

IBM – Patent Distribution for
3/21/2014 39
Claimed Application 2005 2006 2007 2008 2009 2010 2011 2012 2013 2014Grand Total
memory 1 7 2 7 18 15 29 16 23 6 124
manufacturing process 1 6 5 6 9 11 7 1 46
neuromorphic 3 3 6
logic/computation 1 2 1 4
3D stacking 1 1 2
precision resistor 1 1
Grand Total 1 8 2 13 25 24 41 31 36 7 188

IBM – Key US Patents for Resistance
Switching Devices
US Patent
Number
7221579 A memory cell, comprising:
a phase change material (PCM) element; and
a heating element external to said PCM element,
wherein said heating element causes one of a presence of and an absence of a phase
boundary within said PCM element for storing information in said PCM element.
Describes improved switching
speed obtained by an external
heating element applied to a
thin layer of phase change
material.
a phase change memory cell;
a first electrode; and
a layer of filamentary resistor material positioned between the phase change
memory cell and the first electrode, wherein at least one bistable conductive
filamentary pathway is present in at least a portion of the layer of filamentary
resistor material that provides electrical communication between the phase change
memory cell to the first electrode.
Describes combining a phase
change layer with a transition
metal oxide material to provide
filament formation to improve
the high-to-low resistance ratio
and the retention time.
8203873 A crosspoint architecture comprising:
a plurality of electrodes; and
a plurality of crossbar elements, each crossbar element disposed between a first and
a second electrode in said plurality of electrodes, and each crossbar element
comprising at least an asymmetrically programmed memory material used as a
rectifier in series with a resistive memory node, said rectifier, in an ON state,
supplying an ultrahigh current density that is greater than 106 A/cm2.
Describes obtaining a high-to-
low resistance ratio >10000
and a high current density
while using a solid electrolyte
material having a rectifying
diode effect.
3/21/2014

SK Hynix - Overview
some metal oxide ReRAM (5)
3/21/2014 41

SK Hynix – Patent Distribution for
3/21/2014 42
material 2005 2006 2007 2008 2009 2010 2011 2012 2013 2014Grand Total
phase change 4 3 3 4 18 29 29 34 1 125
(blank) 1 2 3 6 19 2 33
metal oxide 1 1 3 5
carbon 1 1
nanotube 1 1
Grand Total 1 4 3 3 4 21 34 36 56 3 165

SK Hynix – Patent Distribution for
3/21/2014 43
Claimed Application 2005 2006 2007 2008 2009 2010 2011 2012 2013 2014 Grand Total
memory 1 4 3 2 4 17 30 22 42 3 128
manufacturing process 1 4 4 9 14 32
test circuit 2 2
reference voltage circuit 1 1
3-terminal device 1 1
electromagnetic/radio wave (e.g. RFID) 1 1
Grand Total 1 4 3 3 4 21 34 36 56 3 165

SK Hynix – Key US Patents for
US Patent
Number
8422282 A phase change memory apparatus comprising:
a plurality of row control cells; and
a plurality of phase change memory cells formed on the row control cells while being
electrically connected to the row control cells,
wherein the plurality of row control cells and the plurality of phase change memory
cells are vertically stacked in a cell array area.
Claims a vertical stacking
solution for PCRAM to improve
integration density.
3/21/2014

Sandisk- Overview
• Patents covering PCRAM (phase change),
metal oxide ReRAM, and carbon-based
ReRAM
solution to non-volatile memory including a
strong patent position in 3D stacking of
ReRAM
3/21/2014 45

Sandisk– Patent Distribution for
3/21/2014 46
material 2007 2008 2009 2010 2011 2012 2013 2014Grand Total
(blank) 3 5 6 13 15 27 26 5 100
carbon 2 5 3 10 20
graphene 1 1 2
nanotube 2 2 3 7
(blank) 2 2 1 6 11
hafnium oxide 1 1
NiCoO 1 1
ZnMnO 1 1
(blank) 6 2 2 4 1 15
phase change 2 2 2 1 7
metal nitride 2 2
titanium alloy 1 1
Grand Total 3 7 6 27 22 35 42 7 149

Sandisk– Patent Distribution for
3/21/2014 47
Count of US patents
Patent Year
claimed application 2007 2008 2009 2010 2011 2012 2013 2014Grand Total
memory 2 6 6 24 15 21 19 6 99
3D stacking 1 1 1 3 1 7 1 15
voltage reference 1 1
Grand Total 3 7 6 27 22 35 42 7 149

Sandisk– Key US Patents for Resistance
Switching Devices
US Patent
Number
8503215 A memory cell comprising:
a steering element; and
a non-volatile state change element coupled in series with the steering element,
wherein the steering element and state change element are disposed in a vertically-
oriented pillar.
Patent includes basic claims to
ReRAM cells including a
steering element (e.g. diode)
vertically aligned with the
resistance switching material.
Priority goes back to 1998.
8507315 A method of forming a memory cell, the method comprising:
forming a steering element above a substrate; and
forming a reversible resistance-switching element coupled to the steering element,
wherein:
the reversible resistance-switching element comprises one or more of TiOx, Ta2O5,
Nb2O5, Al2O3, HfO2, and V2O5, and
the reversible resistance switching element is formed without being etched.
Patent describes simplifying
the manufacturing of metal
oxide ReRAM.
8536015 A method of forming a metal-insulator-metal (“MIM”) stack, the method comprising:
forming a first conducting layer;
forming a resistivity-switching carbon-based material above the first conducting
layer; and
forming a second conducting layer above the carbon-based material,
wherein the carbon-based material has a thickness of not more than ten atomic
layers.
Patent includes basic claims to
manufacturing carbon-based
ReRAM
3/21/2014

Qimonda - Overview
• Mostly focused on PCRAM (phase change)
• Several patents have been reassigned to
Qimonda from Infineon (43), IBM (8) and
Macronix (4)
3/21/2014 49

Qimonda – Patent Distribution for
3/21/2014 50
(blank) 1 6 18 20 26 18 7 2 98
phase change 2 1 7 4 11 9 4 1 39
doped chalcogenide, CBRAM) 1 2 3
nanoparticles 1 1
silicon 1 1
(blank) 1 1
metal oxide 1 1
carbon 1 1
(blank) 1 1
Grand Total 3 9 29 24 37 29 11 3 145

Qimonda – Patent Distribution for
3/21/2014 51
Claimed Application 2006 2007 2008 2009 2010 2011 2012 2013Grand Total
memory 3 9 29 23 33 27 10 3 137
manufacturing process 1 2 1 4
3-terminal device 1 2 3
switch 1 1
Grand Total 3 9 29 24 37 29 11 3 145

Qimonda – Key US Patents for
US Patent
Number
7214958 A memory cell device comprising:
a first electrode;
phase-change material adjacent the first electrode;
a second electrode adjacent the phase-change material;
a diffusion barrier adjacent the phase-change material; and
isolation material adjacent the diffusion barrier for thermally isolating the phase-
change material,
wherein the diffusion barrier prevents diffusion of the phase-change material into
the isolation material,
wherein the isolation material comprises a dielectric material that limits the heat
leakage from the phase change material, and
wherein the dielectric material comprises a porous oxide film having a thermal
conductivity between 0.1 and 0.8 W/mk.
This patent has been cited 214
times by later patents
indicating a high level of
7679980 A memory comprising:
an array of phase change memory cells; and
a first circuit for refreshing only memory cells within the array of phase change
memory cells that are programmed to non-crystalline states in response to a request
for a refresh operation.
Patent describes reducing the
temperature accumulation in
PCRAM by reducing the
number of refresh operations
per memory cell.
8059446 An integrated circuit having a memory cell, the memory cell comprising:
a programmable resistivity layer;
a writing line; and
a switch arranged between the resistivity layer and the writing line, the switch
comprising a control input connected to a select line, the switch limiting a current
through the resistivity layer for a write operation.
Patent describes a transistor in
series with a programmable
resistivity layer to limit current
during data writing.
3/21/2014

Hewlett-Packard - Overview
• 135 US patents for resistance switching materials since
2003
• Originally focused on molecular resistance switching
but now focusing on metal oxide systems
• Often claim their form of ReRAM using an old circuit
theory concept of a “memristor” which HP has
popularized in recent years but the memristor theory is
a technically incorrect circuit model for ReRAM1
• Has patented in logic/computational, neouromorphic,
and various other application areas
3/21/2014 53
1P. Meuffels, R. Soni, “Fundamental issues and Problems in the Realization of Memristors,” 31 July 2012, arXiv:1207.7319

Hewlett-Packard – Patent Distribution
for Resistance Switching Materials
3/21/2014 54
(blank) 3 1 9 2 12 9 1 2 7 9 26 1 82
molecular/polymer 5 3 9 2 2 1 1 23
doped chalcogenide, CBRAM) 1 3 5 4 13
phase change 2 1 2 1 1 7
metal oxide 1 2 3
carbon 2 1 3
graphene 2 1 3
nanoparticles 1 1 1 3
silicon 1 1
crystalline silicon 1 1
Grand Total 10 5 20 6 14 10 1 3 12 18 35 1 135

Hewlett-Packard – Patent Distribution
for Resistance Switching Applications
3/21/2014 55
Row Labels 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012 2013 2014 Grand Total
memory 9 2 11 4 6 3 2 4 13 25 79
logic/computation 1 3 1 4 2 1 1 13
manufacturing process 1 5 1 2 1 1 1 12
encoder/decoder/mux 1 2 3 1 2 9
3D stacking 2 2 4
neuromorphic 1 1 1 3
electromagnetic/radio wave (e.g. RFID) 2 2
display (e.g. LCD) 1 1
protection circuit 1 1
packaging 1 1
waveguide 1 1
switch 1 1
frequency source 1 1
light sensor 1 1
negative differential resistance 1 1
Grand Total 10 5 20 6 14 10 1 3 12 18 35 1 135

Hewlett-Packard – Key US Patents for
US Patent
Number
6128214 A two-dimensional memory array comprising a plurality of nanometer-scale
devices, each device comprising a junction formed by a pair of crossed
wires where one wire crosses another and at least one connector species
comprising at least one bi-stable molecular switch and connecting said
pair of crossed wires in said junction, said junction having a functional
dimension in nanometers, wherein said at least one connector species and
said pair of crossed wires form an electrochemical cell, with one set of
wires formed above another set of wires.
This patent was cited 669 times by later patents
indicating technical importance to molecular
switching types of ReRAM.
6891744 A device comprising an electrode-insulator-electrode and selected from the
group consisting of metal-insulator-metal, metal-insulator-semiconductor,
and semiconductor-insulator-semiconductor, wherein each said electrode
comprises a nanoscale line and wherein said insulator comprises a solid
layer of configurable material between each said electrode.
Includes basic claims covering a nanoscale
crossbar ReRAM architecture. Many earlier
crossbar structures were known for resistance
switching (e.g. US Patent 3445823, US Patent
4677742) and it would have been arguably
obvious to reduce the wire dimensions using
nanolithography or e-beam lithography (e.g. US
Patent 5772905).
7203789 An architecture for computing, comprising:
nanometer scale crossbar switches configured to perform a logical function
in response to a sequence of pulses that encode logic values in the
nanometer scale crossbar switches as impedances, wherein input data is
latched at input latches within the nanometer scale crossbar switches and
wire-AND junctions are open/closed with the result being driven out of an
output latch.
Describes a computing system based on
nanoscale resistance switch crossbars.
3/21/2014

Panasonic - Overview
• Mostly focused on metal oxide ReRAM
particularly tantalum oxide based
3/21/2014 57

Panasonic – Patent Distribution for
3/21/2014 58
(blank) 2 4 4 7 21 27 1 66
metal oxide 4 8 11 28 51
hafnium oxide 1 1 2
iron oxide 3 3
tantalum oxide 3 3 3 9
(blank) 1 5 7 24 37
phase change 1 1 2
metal nitride 1 1
nanoparticles 1 1
Grand Total 1 2 4 10 15 33 55 1 121

Panasonic – Patent Distribution for
3/21/2014 59
Claimed Application 2007 2008 2009 2010 2011 2012 2013 2014Grand Total
memory 1 2 4 10 14 33 45 1 110
manufacturing process 1 9 10
Grand Total 1 2 4 10 15 33 55 1 121

Panasonic – Key US Patents for
US Patent
Number
7577022 An electric element, comprising:
a first electrode;
a second electrode; and
a layer connected between the first electrode and the second electrode and having a
diode characteristic and a variable resistance characteristic,
wherein the layer conducts a substantial electric current in a forward direction
extending from one of the first electrode and the second electrode to the other
electrode as compared to a reverse direction opposite of the forward direction, and
the resistance value of the layer for the forward direction increases or decreases
according to a predetermined pulse voltage applied between the first electrode and
the second electrode.
Patent describes a memory
resistance cell having both
variable resistance and diode
characteristics. This was earlier
described by US Patent
4646266 from Energy
Conversion Devices, US Patent
6891749 from Micron, and US
Patent 7157732 from Spansion.
8022502 A nonvolatile memory element comprising:
a first electrode;
a second electrode; and
a resistance variable layer which is disposed between the first electrode and the
second electrode, a resistance value of the resistance variable layer varying reversibly
according to electric signals having different polarities which are applied between the
electrodes;
wherein the resistance variable layer has a first region comprising a first oxygen-
deficient tantalum oxide having a composition represented by TaOx (0<x<2.5) and a
second region comprising a second oxygen-deficient tantalum oxide having a
composition represented by TaOy (x<y<2.5), the first region and the second region
being arranged in a thickness direction of the resistance variable layer.
Claims a form of ReRAM based
on tantalum oxide which is
described to not need a
forming process and has a high
speed and reversibly stable
rewrite characteristic.
3/21/2014

Sharp/Xenogenic - Overview
since 2003
• 66 of the 108 patents were originally assigned to
Sharp but are currently assigned to “Xenogenic
LLC” assumed to be a licensing or development
company for Sharp
• Focus on metal oxides, primarily perovskites (e.g.
PCMO, SrZrO3, LaNiO3)
3/21/2014 61

Sharp/Xenogenic – Patent Distribution
for Resistance Switching Materials
3/21/2014 62
(blank) 1 8 10 9 4 6 5 7 5 9 2 66
metal oxide 1 4 5 8 5 4 2 2 1 6 38
PCMO, SrZrO3, LaNiO3) 1 4 5 8 5 4 1 1 29
titanium oxide 1 1
(blank) 1 1 6 8
nanoparticles 2 1 3
metal nitride 1 1
Grand Total 1 5 13 18 14 10 8 8 9 5 15 2 108

Sharp/Xenogenic – Patent Distribution
3/21/2014 63
memory 2 7 11 7 4 6 7 8 5 14 2 73
3D stacking 1 2 3
neuromorphic 1 1
Grand Total 1 5 13 18 14 10 8 8 9 5 15 2 108

Sharp/Xenogenic – Key US Patents for
US Patent
Number
6531371 A method of manufacturing a resistive memory structure comprising the steps of:
a) providing a semiconductor substrate;
b) forming a plurality of bottom electrodes;
c) depositing a layer of perovskite material overlying the bottom electrodes;
d) removing the layer of perovskite material from regions outside a memory array
area and leaving perovskite material intact within the memory array area, whereby
the layer of perovskite material remains over more than one bottom electrode; and
e) forming a plurality of top electrodes overlying the layer of perovskite material.
Basic patent for fabricating
metal oxide ReRAM based on
oxides with a perovskite crystal
structure.
6673691 A method of changing the resistance of a perovskite metal oxide thin film device with
a resistance-change-producing pulse comprising changing the resistance of the device
by varying the duration of a resistance-change-producing pulse.
Basic patent for setting the
resistance of a metal oxide
ReRAM based on oxides with a
perovskite crystal structure
using pulse width modulation.
7148533 A memory resistance film with controlled oxygen content, the film comprising:
an oxygen-deficient manganite region; and,
an oxygen-rich manganite region, adjacent the oxygen-deficient manganite region.
Patent describes bilayer oxide
ReRAM to improve the high to
low resistance change ratio.
3/21/2014

Seagate - Overview
• Focus on CBRAM and PCRAM materials
3/21/2014 65

Seagate – Patent Distribution for
3/21/2014 66
material 2010 2011 2012 2013 2014Grand Total
(blank) 9 38 24 13 1 85
phase change 2 2 4
metal oxide 1 1
porous 1 1
Grand Total 15 42 30 18 1 106

Seagate – Patent Distribution for
3/21/2014 67
Claimed Application 2010 2011 2012 2013 2014Grand Total
memory 14 41 28 15 1 99
3D stacking 1 1
Grand Total 15 42 30 18 1 106

Seagate – Key US Patents for
US Patent
Number
8097874 A programmable metallization memory cell comprising:
an electrochemically active electrode and an inert electrode, the electrochemically
active electrode comprising silver filament forming metal;
an ion conductor solid electrolyte material between the electrochemically active
electrode and the inert electrode; and
a sacrificial metal disposed between the electrochemically active electrode and the
inert electrode, the sacrificial metal having a more negative standard electrode
potential than the silver filament forming metal and the sacrificial metal comprising
nickel or chromium.
Patent has been cited 17 times
by more recent patents
indicating a relative technical
importance in comparison to
other ReRAM patents from
Seagate.
3/21/2014

Intel - Overview
• Focus on PCRAM materials
3/21/2014 69

Intel – Patent Distribution for
3/21/2014 70
phase change 6 5 1 3 9 5 6 7 11 6 7 2 68
(blank) 1 2 1 1 1 1 4 11
Grand Total 7 7 1 4 10 5 7 7 13 6 11 2 80

Intel – Patent Distribution for
3/21/2014 71
Count of US patents
Patent Year
claimed application 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012 2013 2014 Grand Total
memory 7 4 1 3 5 3 7 6 10 6 10 1 63
manufacturing process 2 1 4 2 1 3 1 14
3D stacking 1 1 2
3-terminal device 1 1
Grand Total 7 7 1 4 10 5 7 7 13 6 11 2 80

Intel – Key US Patents for Resistance
Switching Devices
US Patent
Number
6512241 A phase change memory comprising:
an electrode on said substrate, said electrode having a substantially planer surface
with a closed geometric shape;
a layer covering substantially all of the closed geometric shape with the exception of
an exposed portion; and
a phase change material contacting said exposed portion.
This patent was cited by 520
later patents indicating a high
level of technical importance.
Describes reducing the size of
the lower electrode for more
effective heating.
6576921 A memory comprising:
a phase change memory element including a first and second node;
a bipolar transistor coupled to said first node; and
a N-channel field effect transistor coupled to said bipolar transistor.
This patent was cited by 223
later patents indicating a high
level of technical importance.
Describes coupling an N-
channel field effect transistor
to a bipolar transistor of a
phase change memory
element to minimize leakage
current.
3/21/2014

Sony - Overview
• Focus on CBRAM materials
3/21/2014 73

Sony – Patent Distribution for
3/21/2014 74
material 2006 2007 2008 2009 2010 2011 2012 2013 Grand Total
(blank) 4 5 5 2 3 1 8 14 42
organic 1 1
Grand Total 4 6 5 3 7 2 8 21 56

Sony – Patent Distribution for
3/21/2014 75
Count of US patents
Patent Year
claimed application 2006 2007 2008 2009 2010 2011 2012 2013 Grand Total
memory 4 5 5 3 7 2 8 21 55
Grand Total 4 6 5 3 7 2 8 21 56

Sony – Key US Patents for Resistance
Switching Devices
US Patent
Number
7307270 A memory element comprising:
a memory layer and an ion source layer positioned between first and second
electrodes,
wherein said ion source layer contains any of elements selected from Cu, Ag and Zn,
and any of elements selected from Te, S and Se, and
said memory layer is made of any of tantalum oxide, niobium oxide, aluminum oxide,
hafnium oxide and zirconium oxide, or is made of mixed materials thereof.
Patent describes a metal oxide
ReRAM including an ion source
layer to maintain a high off
state resistance with thin films
<10nm.
3/21/2014

Elpida - Overview
• Focus on PCRAM materials
3/21/2014 77

Elpida – Patent Distribution for
3/21/2014 78
material 2008 2009 2010 2011 2012 2013 2014Grand Total
phase change 1 6 11 6 1 3 1 29
(blank) 2 5 5 6 6 24
Grand Total 3 11 16 12 7 3 1 53

Elpida – Patent Distribution for
3/21/2014 79
Count of US patents
Patent Year
claimed application 2008 2009 2010 2011 2012 2013 2014Grand Total
memory 3 11 16 10 7 3 1 51
manufacturing process 2 2
Grand Total 3 11 16 12 7 3 1 53

Elpida – Key US Patents for Resistance
Switching Devices
US Patent
Number
7502252 A nonvolatile semiconductor memory device comprising:
first and second regions formed in parallel to each other to define a first channel
region therebetween;
a first word line formed over the first channel region with an intervention of a first
gate insulating film therebetween, the first word line extending in a first direction;
a first bit line extending in a second direction crossing the first direction, the first bit
line crossing over the first and second regions and the first word line and having an
electrical contact with the first region;
a plurality of first element select lines extending in parallel to each other in the
second direction, each of the first element select lines crossing over the first and
second regions and the first word line; and
a plurality of first memory elements, each of the first memory elements being
disposed at an intersection of an associated one of the first element select lines and
the second region and having electrical contacts with the associated one of the first
element select lines and the second region.
This patent was cited 42 times
by later patents indicating a
relatively higher technical
importance than other patents
from Elpida.
3/21/2014

Spansion - Overview
• Focus on polymeric resistance switching
materials
3/21/2014 81

Spansion – Patent Distribution for
3/21/2014 82
material 2004 2005 2006 2007 2008 2009 2010 2011 2012 2013 Grand Total
(blank) 2 2 4 4 4 7 8 3 1 35
molecular/polymer 2 2 1 2 1 8
metal oxide 1 1
Grand Total 2 4 4 6 5 4 7 8 3 1 44

Spansion – Patent Distribution for
3/21/2014 83
Count of US patents
Patent Year
claimed application 2004 2005 2006 2007 2008 2009 2010 2011 2012 2013 Grand Total
memory 1 3 3 5 5 3 6 6 3 1 36
manufacturing process 1 1 1 1 1 1 6
test circuit 1 1
temperature compensation 1 1
Grand Total 2 4 4 6 5 4 7 8 3 1 44

Spansion – Key US Patents for
US Patent
Number
7706168 A method for forming a resistive memory device which has a first resistance in an
erased state, the method comprising providing that the memory device has in the
erased state a second resistance different from the first resistance.
The patent describes using an
annealing step during
manufacture to increase the
off state resistance of a ReRAM
material.
7835172 A semiconductor device comprising:
a data storage element having a variable resistance and an electrode; and
a controller that selects between a first mode that stores data by a resistance value
of the variable resistance, and a second mode that stores data by an amount of
electrical charge stored in the electrode.
The patent describes
controlling a memory cell to
operate in either as ReRAM in
a non-volatile mode or as
DRAM in a volatile mode.
8289750 A semiconductor device comprising:
a plurality of first memory cells arranged in a first memory layer, the first memory
cells comprising a plurality of selection transistors and a plurality of variable
resistance elements;
a plurality of second memory cells arranged in a plurality of second memory layers,
the plurality of second memory cells comprising a plurality of selection diodes and a
plurality of variable resistance elements;
wherein the plurality of first memory cells are configured to store data when reliable
storage is desirable; and
further wherein the plurality of second memory cells are configured to store data
when large storage volume is desirable.
Describes an ReRAM
arrangement using transistor
selection elements in a first
memory array for storing data
reliably and diode selection
elements in another memory
array for storing data in high
density.
3/21/2014

Unity Semiconductor - Overview
• Focus on metal oxide resistance switching
materials
• Acquired by Rambus in February 2012
3/21/2014 85

Unity Semiconductor – Patent
Distribution for Resistance Switching
Materials
3/21/2014 86
material 2004 2005 2006 2007 2008 2009 2010 2011 2012 2013 2014Grand Total
(blank) 5 11 18 4 12 3 5 8 6 4 1 77
metal oxide 1 3 1 1 1 3 8 2 4 24
tin oxide 1 1
(blank) 1 3 1 1 1 3 8 1 4 23
Grand Total 5 12 21 5 13 5 8 17 9 8 1 104

Unity Semiconductor – Patent
Applications
3/21/2014 87
Count of US patents
Patent Year
claimed application 2004 2005 2006 2007 2008 2009 2010 2011 2012 2013 2014Grand Total
memory 4 10 21 3 12 5 6 16 9 6 1 93
manufacturing process 1 2 1 1 2 7
encoder/decoder/mux 1 1 2
3D stacking 1 1
Grand Total 5 12 21 5 13 5 8 17 9 8 1 104

Unity Semiconductor – Key US Patents
for Resistance Switching Devices
US Patent
Number
6753561 A cross point memory array comprising:
a first group of substantially parallel conductive array lines;
a second group of substantially parallel conductive array lines, oriented substantially
perpendicular to the first group of parallel conductive lines; and
a plurality of memory plugs located at the intersections of the first group of parallel
conductive array lines and the second group of parallel conductive array lines,
wherein each memory plug includes multiple layers of thin films including
a thin film layer of a memory element that switches from a first resistance state to a
second resistance state upon application of a first write voltage pulse to the memory
element and reversibly switches from the second resistance state back to the first
resistance state upon application of a second write voltage pulse to the memory
element having opposite polarity of the first write voltage pulse; and
at least one thin film layer constituting a non-ohmic device that, upon application of
low magnitude voltages to the non-ohmic device, imparts a relatively high resistance
to the memory plug.
This patent has been cited by
later patents 229 times
indicating a high level of
3/21/2014

Intermolecular - Overview
• Focus on metal oxide resistance switching
materials
• Primary application focus is on manufacturing
and testing ReRAM non-volatile memory
3/21/2014 89

Intermolecular– Patent Distribution for
3/21/2014 90
material 2009 2010 2011 2012 2013 2014Grand Total
metal oxide 1 2 4 11 17 2 37
aluminum oxide 1 1
hafnium oxide 1 1 2
nickel oxide 1 1 2
titanium oxide 1 1 2
(blank) 1 2 4 8 13 2 30
(blank) 2 4 12 4 22
Grand Total 1 2 7 15 29 6 60

Intermolecular – Patent Distribution
3/21/2014 91
Count of US patents
Patent Year
claimed application 2009 2010 2011 2012 2013 2014Grand Total
manufacturing process 1 2 5 7 15 3 33
memory 2 7 13 2 24
test circuit 1 1 1 3
Grand Total 1 2 7 15 29 6 60

Intermolecular – Key US Patents for
US Patent
Number
8648418 A non-volatile resistive switching memory element comprising:
a first electrode;
a metal oxide layer over the first electrode, wherein the metal oxide layer comprises
a material having a bandgap greater than 4 eV, and non-metallic defect paths in
localized regions of the metal oxide layer; and
a second electrode of the metal oxide layer.
Patent describes higher
bandgap metal oxide ReRAM
for higher resistivity with
dopants to improve retention
and on/off current ratios.
3/21/2014

Adesto - Overview
• Patents originally assigned to Qimonda (5) and
Infineon (10) are currently assigned to Adesto.
• Focus on CBRAM resistance switching
materials
3/21/2014 93

Adesto – Patent Distribution for
3/21/2014 94
doped chalcogenide, CBRAM) 1 1 2 4 1 4 3 2 18
(blank) 3 2 3 1 2 11
nanoparticles 1 1 2
Grand Total 4 3 6 6 1 4 3 4 31

Adesto – Patent Distribution for
3/21/2014 95
Count of US patents
Patent Year
claimed application 2007 2008 2009 2010 2011 2012 2013 2014Grand Total
memory 3 3 5 4 3 3 4 25
voltage reference 1 1
Grand Total 4 3 6 6 1 4 3 4 31

Adesto – Key US Patents for Resistance
Switching Devices
US Patent
Number
7215568 A method for writing to a CBRAM resistance element of a resistive memory
arrangement having a cell array structured in rows and columns with resistive
memory cells connected to a drive element, each drive element jointly being
connected to a plurality of CBRAM resistive elements forming a memory cell, the
method comprising;
opening a word line of a corresponding memory cell;
placing all plate lines and bit lines of unselected resistance elements at a specific
plate potential;
increasing the plate line voltage of a selected resistance element by a specific write
voltage; and
decreasing the voltage of an associated bit line by the write voltage.
Highest forward citations of
Adesto’s CBRAM patents (49)
indicating relatively higher
8426839 A conductive bridging memory cell, comprising:
an ion conductor layer formed over an active electrode that is a source of conductive
ions for the ion conductor layer;
a conductive layer formed in a vertical opening in a lower insulating layer and a
barrier layer; and
the barrier layer is formed below the active electrode and in contact with the
conductive layer, and formed on the top surface of the lower insulating layer, the
barrier layer substantially preventing a movement of conductive ions therethrough.
A barrier layer is described to
allow more control of electrical
properties (e.g. resistances,
switching thresholds) in
CBRAM memory cell.
3/21/2014

Crossbar - Overview
since 2003
• Company formed based on research conducted at
the University of Michigan on resistance
switching in amorphous silicon.
• Current investors include Kleiner Perkins Caufield
& Byers
• Focus on amorphous silicon resistance switching
materials
3/21/2014 97

Crossbar – Patent Distribution for
3/21/2014 98
material 2012 2013 2014Grand Total
(blank) 5 12 4 21
silicon 2 5 1 8
amorphous silicon 2 5 1 8
metal oxide 1 1

Crossbar – Patent Distribution for
3/21/2014 99
Count of US patents
Patent Year
claimed application 2012 2013 2014Grand Total
memory 2 10 4 16
manufacturing process 5 8 1 14

Crossbar – Key US Patents for
US Patent
Number
8088688 A method of forming a non-volatile memory device, comprising:
providing a semiconductor substrate having a surface region;
forming a first dielectric material overlying the surface region;
forming a first wiring material comprising at least an aluminum material overlying the
first dielectric material;
forming a silicon material overlying the first wiring material;
forming an intermix region using at least an anneal process, the intermix region
consuming a portion of the silicon material and a portion of the aluminum material,
the annealing process causing formation of a first alloy material from the intermix
region and a polycrystalline silicon material having a p+ impurity characteristic
overlying the first alloy material, the polycrystalline silicon material having the p+
impurity being derived from an aluminum species from the aluminum material and
the silicon material;
forming a first wiring structure from at least a portion of the first wiring material;
forming a resistive switching element comprising an amorphous silicon material
overlying the polycrystalline silicon material having the p+ impurity characteristic;
and
forming a second wiring structure comprising at least a metal material overlying the
resistive switching element.
Claims method of forming
amorphous silicon form of
ReRAM
3/21/2014

Axon - Overview
• Company formed based on research
conducted at Arizona State University in the
1990’s
• Focus on CBRAM materials
3/21/2014 101

Axon – Patent Distribution for
3/21/2014 102
material 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012 Grand Total
doped chalcogenide, CBRAM) 1 2 2 4 3 3 1 2 2 3 23
Grand Total 1 2 2 4 3 3 1 2 2 3 23

Axon – Patent Distribution for
3/21/2014 103
Count of US patents
Patent Year
claimed application 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012 Grand Total
memory 1 2 1 3 3 2 1 2 2 3 20
photonics 1 1
Grand Total 1 2 2 4 3 3 1 2 2 3 23

Axon – Key US Patents for Resistance
Switching Devices
US Patent
Number
5761115 A programmable metallization cell comprising a body formed of a fast ion
conductor material having metallic ions disposed therein, a plurality of
conducting electrodes deposited on said body of material, said electrodes
adapted to have a first voltage applied between two of said electrodes to
program the cell by growing a metallic dendrite from the negative of the
two electrodes toward the positive of the two electrodes while the first
voltage is applied thereto.
Basic patent claim to
programmable metallization
cell/CBRAM technology, has
been cited 506 times by later
patents, estimated to expire
May 30, 2016
7728322 A microelectronic programmable structure comprising:
an insulating layer;
an ion conductor comprising an oxide formed at least partially within a via in the
insulating layer;
a first electrode proximate the ion conductor; and
a second electrode proximate the ion conductor.
Continuation patent estimated
to expire May 30, 2016, it is
notable that earlier ion
conductor resistance switching
materials based on oxides are
known (US Patent 4945257, US
Patent 5278636)
3/21/2014

Contour Semiconductor - Overview
3/21/2014 105

Contour Semiconductor – Patent
Materials
3/21/2014 106
material 2005 2008 2009 2010 2011 2012 2013Grand Total
(blank) 1 1 3 2 3 3 13
phase change 1 1
Grand Total 1 1 1 3 2 3 3 14

Contour Semiconductor – Patent
Applications
3/21/2014 107
Count of US patents
Patent Year
claimed application 2005 2008 2009 2010 2011 2012 2013Grand Total
memory 1 1 2 2 2 2 10
encoder/decoder/mux 1 1 2
manufacturing process 1 1 2
Grand Total 1 1 1 3 2 3 3 14

Contour Semiconductor – Key US
Patents for Resistance Switching
Devices
US Patent
Number
6956757 An electronic memory device comprising two or more layers of memory circuitry,
each layer comprising circuitry for storing and facilitating retrieval of information and
decoding circuitry for addressing specific information within said information storage
circuitry, wherein said two or more layers are interconnected by conductors at least
some of which are also connected to said decoding circuitry.
Includes broad claims which
may be relevant to forming
multilayer ReRAM on top of a
CMOS substrate.
7826244 An electronic memory device comprising:
a plurality of layers of memory circuitry, wherein each layer of memory circuitry
comprises a plurality of storage locations; and
error detection and correction logic interconnected to at least one of the layers of
memory circuitry,
wherein the error detection and correction logic is disposed on a substrate disposed
beneath the plurality of layers of memory circuitry.
CMOS substrate.
8116109 An electronic memory device comprising a plurality of layers of circuitry, wherein:
a first layer comprises (i) storage circuitry for storing and facilitating retrieval of
information and
(ii) non-storage circuitry contributing to the access of the storage circuitry; and
a substrate layer, disposed beneath the first layer, comprises a plurality of transistors
which receive signals from the first layer.
CMOS substrate.
3/21/2014

4D-S - Overview
since 2003
• Primary material for resistance switching is a
perovskite-type metal oxide
3/21/2014 109

4D-S – Patent Distribution for
3/21/2014 110
material 2011 2013Grand Total
metal oxide 2 3 5
PCMO, SrZrO3, LaNiO3) 2 3 5
Grand Total 2 3 5

4D-S – Patent Distribution for
3/21/2014 111
Count of US patents
Patent Year
claimed application 2011 2013Grand Total
memory 2 1 3
Grand Total 2 3 5

4D-S – Key US Patents for Resistance
Switching Devices
US Patent
Number
7985960 A memory cell comprising:
a plurality of crystals wherein the plurality of crystals comprise one of Praseodymium
Calcium Manganese Oxide (PCMO) and or a chalcogenite material with similar Rex
Cay MnO crystals; and
at least two conductors, the at least two conductors being orthogonal to each other;
wherein at least one of plurality of crystals are bounded by the orthogonal
intersection of the at least two conductors.
It is not clear how the claims of
this and related 4D-S patents
overcome earlier patents
based on PCMO resistance
switching (e.g. US Patent
6531371) which were not
considered during
examination.
3/21/2014

Symetrix - Overview
since 2003
3/21/2014 113

Symetrix – Patent Distribution for
3/21/2014 114
material 2009 2010 2011Grand Total
(blank) 1 1 2
carbon 1 1
(blank) 1 1
Grand Total 1 1 1 3

Symetrix – Patent Distribution for
3/21/2014 115
Count of US patents
Patent Year
claimed application 2009 2010 2011Grand Total
memory 1 1 1 3
Grand Total 1 1 1 3

Symetrix – Key US Patents for
US Patent
Number
7872900 A resistive switching integrated circuit memory comprising:
a resistive switching memory cell including a correlated electron material (CEM);
a write circuit for placing said resistive switching memory cell in a first resistive state
or a second resistive state depending on information input into said memory,
wherein the resistance of said CEM is higher in said second resistance state than in
said first resistance state; and
a read circuit for sensing the state of said memory cell and providing an electrical
signal corresponding to the sensed state of said memory cell;
wherein said memory is capable of being read 10
8
times with less than 50% fatigue.
Describes an alleged new type
of resistance switching
mechanism not requiring
electroforming based on nickel
oxide doped with extrinsic
ligands.
3/21/2014

Further Information
For a copy of the complete patent data used to
generate this review send an e-mail to:
tinytechip@gmail.com
with the subject “Resistance Switching Materials
and Device Patent Landscape”
3/21/2014 117

Resistance switching materials and devices

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